Pb_(0.50)Sr_(0.75)Y_(0.70)Ca_(0.25)Cu_(1.70)O_y单晶的磁阻研究

对低掺杂区非超导的Pb_(6.56)Sr_(?)Y_(?)Ca_(?)Cu_(?)O_y单晶样品进行了电阻和磁阻的测量,发现在低温下电阻温度关系遵从变程跳跃传导的R=R_(?)exp[(T_(?)/T)~(?)]的变化规律,这说明该样品处于强局域化区域.在低温下的磁阻为负并有明显的各向异性,这表明这类体系的磁阻主要来自于轨道效应的贡献,并且可能受到自旋-轨道散射的影响.     

Electronic structures and optical properties of Ⅲ_A-doped wurtzite Mg_(0.25)Zn_(0.75)O

The energy band structures, density of states, and optical properties of IIIA-doped wurtzite Mg0.25Zn0.75O(IIIA= Al,Ga, In) are investigated by a first-principles method based on the density functional theory. The calculated results show that the optical bandgaps of Mg0.25Zn0.75O:IIIAare larger than those of Mg0.25Zn0.75 O because of the Burstein–Moss effect and the bandgap renormalization effect. The electron effective mass values of Mg0.25Zn0.75O:IIIAare heavier than those of Mg0.25Zn0.75 O, which is in agreement with the previous experimental result. The formation energies of MgZnO:Al and MgZnO:Ga are smaller than that of MgZnO:In, while their optical bandgaps are larger, so MgZnO:Al and MgZnO:Ga are suitable to be fabricated and used as transparent conductive oxide films in the ultra-violet(UV) and deep UV optoelectronic devices.     

阶梯AlGaN外延新型Al_(0.25)Ga_(0.75)N/GaNHEMTs击穿特性分析

为了优化AlGaN/GaN HEMTs器件表面电场,提高击穿电压,本文首次提出了一种新型阶梯AlGaN/GaN HEMTs结构.新结构利用AlGaN/GaN异质结形成的2DEG浓度随外延AlGaN层厚度降低而减小的规律,通过减薄靠近栅边缘外延的AlGaN层,使沟道2DEG浓度分区,形成栅边缘低浓度2DEG区,低的2DEG使阶梯AlGaN交界出现新的电场峰,新电场峰的出现有效降低了栅边缘的高峰电场,优化了AlGaN/GaN HEMTs器件的表面电场分布,使器件击穿电压从传统结构的446 V,提高到新结构的640 V.为了获得与实际测试结果一致的击穿曲线,本文在GaN缓冲层中设定了一定浓度的受主型缺陷,通过仿真分析验证了国际上外延GaN缓冲层时掺入受主型离子的原因,并通过仿真分析获得了与实际测试结果一致的击穿曲线.     

Pr_(0.75)Na_(0.25)Mn_(1-x)Fe_xO_3的制备及磁学和输运性质研究

采用溶胶凝胶法通过较低温度、较短的烧结时间制备了单相的多晶钙钛矿Pr0.75Na0.25Mn1-xFexO3(0≤x≤0.3),避免了Na元素的挥发及锰氧化物的析出,使Pr1-xNaxMnO3中Na的最大掺入量由文献报道的0.19提高到0.25,样品单相性得到大幅度提高.系列样品的磁化强度、电阻率随温度的变化关系表明2%的Fe掺杂便能大大减弱低温电荷有序;在x≤0.05时系列样品磁化强度随Fe含量的增加而增加,电阻率随Fe含量的增加而下降,然后二者随Fe含量进一步增加均朝相反的趋势变化.用几何效应(Fe3+的几何尺寸大小)和电子结构的影响两个方面的竞争解释这种现象.     

用Nb_3(Al_(0.75)Ge_(0.25))粉末制备超导线材的研究

提出并研究了将A-15超导化合物粉末置于铜管内拉丝制备超导线材的方法.直径为0.3mm含有Nb_3(Al_(0.75)Ge_(0.25))粉末的线材样品在7T(4.2k)的磁场中,全电流密度达到6.7×10_(4)A/cm_2,T_c=18.3k,并具有良好的韧性.这种方法对成份为A_3B在相图上稳定的和经适当快冷时亚稳定的一些A-15超导化合物都是适用的.     

用MOS方法研究四元混晶In_(0.75)Ga_(0.25)As_(0.58)P_(0.42)中的深能级中心

采用MOS方法,在液相外延生长的n型In_(0.75)Ga_(0.25)As_(0.58)P_(0.42)混晶中,我们测出了两个位于导带下面0.20eV和0.48eV处的电子陷阱,对电子的俘获截面分别为1.4×10~(-16)cm~2和3.8×10~(-12)cm~2。 关于采用MOS方式研究具有多层结构的化合物半导体材料的DLITS问题,本文也进行了讨论。     

(110)应变对立方相Ca_2P_(0.25)Si_(0.75)能带结构及光学性质的影响

采用第一性原理贋势平面波方法对(110)应变下立方相Ca_2P_(0.25)Si_(0.75)的能带结构及光学性质进行模拟计算,全面分析了应变对Ca_2P_(0.25)Si_(0.75)能带结构、光学性质的影响.计算结果表明:在92%~100%压应变范围内随着应变的逐渐增大导带向低能方向移动,价带向高能方向移动,带隙呈线性逐渐减小,但始终为直接带隙;在100%~102%张应变范围内随着应变的增加,带隙呈逐渐增大,应变达到102%直接带隙最大Eg=0.54378 e V;在102%~104%应变范围内随着应变的增加,带隙逐渐减小;当应变大于104%带隙变为间接带隙且带隙随着应变增大而减小.施加应变Ca_2P_(0.25)Si_(0.75)的介电常数、折射率均增大;施加压应变吸收系数增加,反射率减小;施加张应变吸收系数减小,反射率增加.综上所述,应变可以改变Ca_2P_(0.25)Si_(0.75)的电子结构和光学常数,是调节Ca_2P_(0.25)Si_(0.75)光电传输性能的有效手段.     

Muon Knight shift in platinum and in β-PdHx (x=0.70, 0.75)

The ⁺ Knight shift in platinum has been measured between 20 K and 785 K. It shows a strong temperature dependence and scales with the magnetic bulk susceptibility. A temperature independent contribution of +40 to +60 ppm and a d-electron induced hyperfine field per unpaired d-electron per atom ofB _hf,d =–5.03 kG (±8.5%) are obtained. The ⁺ Knight shift in PdH_0.70 and PdH_0.75 shows no dependence on temperature between 20 K andRT and increases fromK ppm forx=0.70 toK ppm forx=0.75, in good agreement with proton Knight shift measurements.     

Photoluminescence properties of Y_(0.75-x)Gd_xAl_(0.10)BO_3:Eu_(0.10)~(3+),0.05R~(3+)(R= Sc,Bi) (0.00 ≤ x ≤ 0.45)

Y 0.75 -x Gd x Al 0.10 BO 3 :Eu0.10 3+, 0.05R 3+ (R=Sc, Bi) (0.00 ≤ x ≤ 0.45) powder samples are prepared by solid-state reaction and their luminescence properties are investigated. With the replacement of Y 3+ ions by Sc 3+ (or Bi 3+ ) and Gd 3+ ions in (Y,Al)BO 3 :Eu, the intensities of emission at 254 and 147 nm are remarkably improved, because Sc 3+ ions can absorb UV light and transfer the energy to Eu 3+ ions efficiently. Moreover, Gd 3+ and Bi 3+ ions act as an intermediate "bridge" between the sensitizer and the activator (Eu 3+ ) in energy transfer to produce light in the (Y, Gd)BO 3 :Bi 3+ , Eu 3+ system more effectively. After doping an appropriate concentration of Gd 3+ into Y 0.50 Gd 0.25 Al 0.10 BO 3 :Eu0.01 3+ , Bi0.05 3+ , the emission intensity reaches its maximum, which is nearly 110% compared with the red commercial phosphor (Y,Gd)BO 3 :Eu and better chromaticity coordinates (0.650, 0.350) are obtained.     

Structural phase transition,antiferromagnetism and two superconducting domes in LaFeAsO_(1-x)F_x(0<x≤0.75)

We report~(75) As nuclear magnetic resonance(NMR)/nuclear quadrupole resonance(NQR) and transmission electron microscopy(TEM) studies on LaFeAsO_(1-x)F_x. There are two superconducting domes in this material. The first one appears at 0.03 ≤ x ≤0.2 with T_c~(max) = 27 K, and the second one at 0.25 ≤x≤0.75 with T_c~(max) = 30 K. By NMR and TEM, we demonstrate that a C4-to-C2 structural phase transition(SPT) takes place above both domes, with the transition temperature T_s varying strongly with x. In the first dome, the SPT is followed by an antiferromagnetic(AF) transition, but neither AF order nor low-energy spin fluctuations are found in the second dome. By ~(75) As nuclear spin-lattice relaxation rate(1/T_1) measurements, we find that AF order and superconductivity coexist microscopically in LaFeAsO_(0.97) F_(0.03). In the coexisting region, 1/T_1 decreases at T_c but becomes proportional to T below 0.6 T_c, indicating gapless excitations. Therefore, in contrast to the early reports, the obtained phase diagram for x ≤ 0.2 is quite similar to the doped BaFe_2As_2 system. The electrical resistivity p in the second dome can be fitted by ρ = ρ0 + AT~n with n = 1 and a maximal coefficient A at around xopt = 0.5-0.55 at which T_s extrapolates to zero and Tc is the maximal, which suggests the importance of quantum critical fluctuations associated with the SPT. We have constructed a complete phase diagram of LaFeAsO_(1-x)F_x, which provides insight into the relationship between SPT, antiferromagnetism and superconductivity.     

(Ti1-xNbx)5AlC4(x=0.4, 0.75, 1)固溶体系的第一性原理研究

采用第一性原理计算,通过投影缀加波(PAW)和广义梯度近似(GGA)研究三元层状化合物(MAX) Ti₅AlC₄中Nb多比例掺杂M位元素.通过计算该固溶体系的声子谱、生成焓和弹性常数,讨论了(Ti_1-xNb_x)₅AlC₄固溶体系的稳定性,得到了三种稳定的结构：(Ti_0.6Nb_0.4)₅AlC₄、(Ti_0.25Nb_0.75)₅AlC₄和Nb₅AlC₄,即(Ti_1-xNb_x)₅AlC₄(x=0.4, 0.75, 1)固溶体系.Bader电荷、局域电荷密度、态密度表明该固溶体系呈现出金属特性,且电导率随着掺杂比例的增大,电荷不断转移,电导率增强.通过计算不同掺...     

Muon knight shift in platinum and in β-PdHx (x=0.70, 0.75, 0.86)

The ⁺ Knight shift in Platinum has been measured between 20 K and 785 K. It shows a strong temperature dependence and scales with the magnetic bulk susceptibility. A temperature independent contribution of +53±15 ppm and a d-electron induced hyperfine field per unpaired d-electron per atom of B _hfd ^a =–5.03 kG(±8.5%) are obtained. The ⁺ Knight shift in PdH_0.70, PdH_0.75 and PdH_0.86 shows no dependence on temperature between 20 K and RT and increases from K=–(8±3) ppm for x=0.70 to K =+(6.5±3) ppm K=+(6.5±3) ppm for x=0.86, in good agreement with proton Knight shift measurements.     

Lithium/vacancy ordering in the monoclinic LixNiO2 (0.50≤x≤0.75) solid solution

Lithium de-intercalation from the nearly stoichiometric LiNiO₂ phase (z=0.02 in Li_1−zNi_1+zO₂) entails a structural transition from the rhombohedral to the monoclinic symmetry. As this macroscopic lattice distortion appears in a wide composition range (0.50<x<0.75, x in `Li_xNiO₂'), a detailed electron diffraction study has been performed on the intermediate Li_0.63Ni_1.02O₂ composition in order to find the driving force of this transition. A superstructure cell, four times bigger than the one deduced from the X-ray Rietveld refinement, has been derived from the electron diffraction data. The existence of such a superstructure is suggestive of a possible ordering of vacancies among the lithium layers. Indeed, the existence of three lithium crystallographic positions in this supercell allows us to understand, on the one hand, why a monoclinic distortion occurs, and, on the other hand, its composition limits (Li_0.50□_0.25□_0.25′NiO₂ and Li_0.50Li_0.25□_0.25′NiO₂). Moreover, the presence of twinned crystals has also been shown in this monoclinic phase and has been related to the structural change which occurs on lithium de-intercalation from the pristine rhombohedral Li_0.98Ni_1.02O₂ phase.     

CuO added Pb_(0.92)Sr_(0.06)Ba_(0.02)(Mg_(1/3)Nb_(2/3))_(0.25)(Ti_(0.53)Zr_(0.47))_(0.75)O_3 ceramics sintered with Ag electrodes at 900℃ for multilayer piezoelectric actuator

CuO added Pb_(0.92)Sr_(0.06)Ba_(0.02)(Mg_(1/3)Nb_(2/3))_(0.25)(Ti_(0.53)Zr_(0.47))_(0.75)O_3 ceramics were studied to prepare high-quality multilayer piezoelectric actuators with pure Ag electrodes at 900℃. Cu O addition not only reduced the sintering temperature significantly from 1260℃ to 900℃ but also improved the ceramic density to 7.742 g/cm~3. The 0.7 wt.% Cu O added ceramic sintered at 900℃ shows the remnant polarization(P_r) of 40 μC/cm~2, 0.28% strain at 40 kV/cm, and the piezoelectric coefficient(d_(33)) of 630 pC/N. This ceramic shows a strong relaxor characteristic with a Curie temperature of 200℃. Furthermore, the 0.7 wt.% CuO added ceramic and pure Ag electrodes were co-fired at 900℃ to prepare a high-quality multilayer piezoelectric actuator with a d_(33) of over 450 pC/N per ceramic layer.     

Muon diffusion in the metal hydrides β-PdHx(x=0.70 and 0.75) and LaNi5H6

We report on zero and transverse fieldSR measurements in LaNi₅H₆ and in-PdH_x (x=0.70 and 0.75) between 16 K and room temperature. The ⁺-depolarization is predominantly caused by the spread in nuclear dipole fields from the protons. Motional averaging is caused by the combined motion of protons and the ⁺. The results are quite unexpected and point to ⁺-trapping within regions of largely immobile hydrogen configurations or to a highly correlated ⁺-proton diffusion. In LaNi₅H₆ a linear change of the second moment with temperature between 20 K and 120 K is indicated.     

Dielectric permittivity dynamics of Ba1−x SrxTiO3 epitaxial films (x=0.75): Microstructure and depolarization effects

Trilayer epitaxial heterostructures including metal oxide electrodes (SrRuO₃, 200 nm) and a sandwiched dielectric layer (Ba_0.25Sr_0.75TiO₃, 700 nm) were grown by laser ablation on (001)LaAlO₃ substrates. The maximum permittivity of the Ba_0.25Sr_0.75TiO₃ layer (?′/?₀≈3700) was obtained at T _M =160 K and an external electric field E≈10⁶ V/m. The ?′(T) dependence for the Ba_0.25Sr_0.75TiO₃ layer in the paraelectric phase is well fitted by the Curie-Weiss relation, with the Curie constant and the Weiss temperature differing only insignificantly from the corresponding bulk values. The change in the permittivity of the Ba_0.25Sr_0.75TiO₃ layer induced by the application of a ±2.5 V bias voltage to the electrodes reached as high as 85%. The electric-field dependence of the polarization retained clearly pronounced saturated hysteresis loops up to temperatures 10–15 K above T _M .     

La0.25Ca0.75MnO3的晶体结构研究

用X射线衍射仪测量了La0．25Ca0．75MnO3多晶粉末在300K和70K时的晶体结构衍射谱，并用Rietveld全谱拟合法对这些数据进行了拟合．结果表明，在室温时，La0．25Ca0．75MnO3由于MnO6八面体的Jahn-Teller晶格畸变，其晶体结构已发生了扭曲，晶格常数分别为a=0．53559nm，b=0．75537nm，c=0．53587nm．温度降至70K时，X射线衍射谱上出现了比室温更多的衍射峰，有些峰发生了“双峰”劈裂，但仍然具有与室温相同的晶体对称性(空间群为Prima)．70K时的晶格常数分别为a=0．53673nm，b=O．74785nm，c=O．53718nm，与300K时的晶格常数比较，a和c分别增大了O．21％和O．24％，而b减小了1．O％，这一晶体结构的巨大变化源于在电荷有序态下形成了静态的合作Jahn-Teller效应．     

Co~(2 )-Ti~(4 )和Cu~(2 )-Nb~(5 )离子取代BaFe_(12)O_(19)单晶体中Fe~(3 )离子的研究

本文对用Co~(2 )-Ti~(4 )和Cu~(2 )-Nb~(5 )离子取代BaFe_(12)O_(19)单晶体中Fe~(3 )离子进行了研究,以Bi_2O_3作为助熔剂生长出了BaFe_(12-2x)Co_x~(2 )Ti_x~(4 )O_(19)(x=0;0.04;0.09;0.13;0.27和0.68)以及BaFe_(12-x)[Nb_(1/3)~(5 )Cu_(2/3)~(2 )]_xO_(19)(x=0;0.28;0.44和0.60)这两系列的单晶体,测定了100—300K温度范围内样品的磁化强度σ与单轴各向异性常数K_1,我们发现,对CO~(2 )-Ti~(4 )取代的样品,当x≤0.09时,其σ与K_1随x的增加而缓慢增加;当x>0.09时,其σ与K_1随x的增加而迅速降低,至x=1.1时,K_1变为零,对Nb~(5 )-Cu~(2 )取代的样品,其σ值在整个成份范围内基本保持不变,且有缓慢增加趋势;而K_1值则随x增加而单调下降,提出了取代离子在M型六角铁氧体中可能的分布模型来解释我们的结果。     

金属玻璃(Fe_(1-x)Co_x)_(78)Si_(10)B_(12)的感生各向异性

本文研究了金属玻璃(Fe_(1-x)CO_x)_(78)Si_(10)B_(12)的磁化感生各向异性、应变感生各向异性随成分和温度的变化。磁化感生各向异性常数K_(um)为正值,x=0.7时为最大;不可逆的应变感生各向异性常数K_(usi)为正值,x=0.5时为最大;可逆的应变感生各向异性常数K_(usr)除了x>0.975区均为负值,在x=0.7时为最大;感生各向异性常数在温度变化时与M_s~α成正比,α在3.4和7.5之间随成分和退火工艺而变化。用短程有序模型解释了部分实验结果。