激光二极管抽运的GaAs被动Q开关Nd∶YVO4激光器

利用固体可饱和吸收体砷化镓 (GaAs)作为被动调Q元件 ,实现了激光二极管抽运平凹腔掺钕钒酸钇(Nd∶YVO4)激光调Q运转 ,详细测量了砷化镓被动调QNd∶YVO4激光输出特性 ,获得脉宽 15ns,重复频率 4 70kHz,光束质量M2 =1.31的激光输出 ,调Q激光运转阈值为 5 0 0mW ,并数值求解了砷化镓被动调Q速率方程 ,讨论了被动调Q机理以及调Q脉冲宽度和脉冲重复频率对抽运速率的依赖关系 ,理论计算结果与实验结果相一致。     

LD抽运被动调Q固体激光器的脉冲稳定性

报道了二极管激光抽运Cr,Nd∶YAG被动调Q Nd∶YVO4 1064 nm激光输出.为了提高被动调Q激光的输出稳定性,谐振腔采用长腔,增益介质位于谐振腔中间位置.实验中获得了稳定的被动调Q激光输出.在最高入射抽运功率为17.5 W时,脉冲重复频率达到71.3 kHz,脉冲宽度为0.4 μs.调Q脉冲幅度不稳定性低于±10%,脉冲时间波动性低于±3.5%.     

GaAs被动调Q兼输出耦合Nd∶YVO4激光特性研究

利用可饱和吸收半导体GaAs作为被动调Q元件和F-P输出耦合镜,实现了半导体激光器(LD)抽运Nd:YVO4激光调Q运转,获得脉宽度为47ns,重复频率为1183kHz,平均功率为430 mW,光束质量为M2=1.13的TEM00激光基横模输出,调Q抽运阈值为1700mW.并数值求解了含有GaAs被动调Q兼输出耦合的速率方程,分析了GaAs被动调Q机理以及脉宽宽度、重复频率、平均功率随抽运速率、腔长的变化关系,理论与实验结果相一致.为多功能综合型微型调Q固体激光器提供了简单有效的方法.     

GaAs被动调Q兼输出耦合Nd∶YVO4激光特性研究

利用可饱和吸收半导体GaAs作为被动调Q元件和FP输出耦合镜,实现了半导体激光器(LD)抽运Nd:YVO4激光调Q运转,获得脉宽度为47ns,重复频率为1183kHz,平均功率为430mW,光束质量为M2=113的TEM00激光基横模输出,调Q抽运阈值为1700mW.并数值求解了含有GaAs被动调Q兼输出耦合的速率方程,分析了GaAs被动调Q机理以及脉宽宽度、重复频率、平均功率随抽运速率、腔长的变化关系,理论与实验结果相一致.为多功能综合型微型调Q固体激光器提供了简单有效的方法. 关键词： 被动调Q 输出耦合 GaAs     

低温生长GaAs在Nd∶YVO4激光器中调Q特性的研究

采用一种新型的被动调Q饱和吸收体,低温生长GaAs薄膜，实现了半导体抽运Nd∶YVO4激光器的调Q运转.研究了激光器的调Q特性,调Q抽运阈值为2W.在抽运功率9.2 W时，获得的最短脉冲半峰全宽为15 ns，最大单脉冲能量为4.84 μJ，最高峰值功率为330 W，最大平均输出功率为1.16 W；脉冲重复频率在220 kHz到360 kHz之间.     

LD抽运Cr4+∶YAG高重复率被动调Q Nd∶YVO4激光器

采用Cr4+∶YAG晶体作为可饱和吸收体，实现连续激光二极管（LD）端面抽运的Nd∶YVO4激光器的高重复率被动调Q.在注入抽运功率为8.8 W时，得到重复频率23.8 kHz、平均功率1.21 W的调Q脉冲序列；每个脉冲能量为51 μJ、脉宽为25 ns、峰值功率达到2.03 kW.实验上研究了脉冲重复频率、平均输出功率、脉冲宽度、单脉冲能量与抽运功率、输出镜透过率的关系.实验结果表明，当抽运功率较大时，脉冲重复频率和输出平均功率随着抽运功率的增加而减小，对此进行了合理的理论解释.     

低温生长GaAs在Nd∶YVO_4激光器中调Q特性的研究

采用一种新型的被动调Q饱和吸收体,低温生长GaAs薄膜,实现了半导体抽运Nd∶YVO4激光器的调Q运转.研究了激光器的调Q特性,调Q抽运阈值为2W.在抽运功率9.2W时,获得的最短脉冲半峰全宽为15ns,最大单脉冲能量为4.84μJ,最高峰值功率为330W,最大平均输出功率为1.16W;脉冲重复频率在220kHz到360kHz之间.     

LD泵浦Nd∶YVO_4/KTP内腔倍频声光调Q理论和实验研究

给出了Nd∶YVO4/KTP内腔倍频声光调Q工作原理的耦合波速率方程组实现了半导体激光器(LD)抽运折叠腔倍频声光调Q绿激光的运转,在抽运光功率3.8W、重复频率10kHz时,获得绿光脉冲宽度为33.2ns,单脉冲能量为59.6μJ,峰值功率达到1.8kW数值求解耦合波方程组理论值与实验结果相符     

大功率LD抽运的Cr^4＋：YAG被动调Q Nd：YVO4激光器

在LD端面抽运的Nd：YVO4激光器中插入Cr^4＋：YAG晶体,获得了稳定的1．06μm波长的高重复率被动调Q脉冲激光输出。实验研究了抽运功率、腔长、输出镜透过率对输出功率的影响,以及不同抽运功率下脉冲重复频率和脉冲宽度的变化,并对结果进行了理论分析。当腔长为8cm,抽运功率为27W时,得到重复率37．8kHz、平均功率3．5W的调Q脉冲序列;单个脉冲能量为93μJ、脉宽为24ns、峰值功率为3．9kW。     

全固态单纵模脉冲Nd:YVO_4环形激光器

设计并研制了全固态调Q脉冲单纵模Nd:YVO4环形激光器。利用880nm激光二极管端面抽运Nd:YVO4晶体,通过四镜环形谐振腔中插入声光调Q晶体、标准具,并优化激光谐振腔的结构,获得了重复频率为200Hz、脉宽为26.6ns的单纵模脉冲1.064μm激光输出。当泵浦功率为15 W时,单纵模激光输出的单脉冲能量为570μJ、脉冲能量稳定性优于3%。     

脉冲LDA泵浦Nd∶YVO4/GaAs被动调Q锁模激光器

用脉冲激光二极管阵列（LDA）作为泵浦源、微柱透镜阵列和透镜导管作为耦合系统,以As＋注入GaAs可饱和吸收片作为被动调Q锁模元件,实现了Nd∶YVO4激光器调Q锁模运转.调Q运转阶段,激光器每泵浦脉宽内输出一个调Q脉冲,调Q脉宽7ns.调Q锁模运转阶段,初始透过率60％的GaAs晶片对调Q包络内的锁模脉冲的调制深度达到95％以上,锁模脉冲重复频率991 MHz.研究了加在LDA上的电压、方波脉冲的脉宽和重复频率对调Q锁模脉冲特性的影响,并对实验结果进行了讨论.     

Multi-watt Q-switched Nd:YVO_4 laser with GaAs output coupler

A passively Q-switched operation of a diode-pumped Nd.YVO_4 laser is demonstrated, in which a GaAsfilm is used as the saturable absorber as well as the output coupler. At the pump power of 10 W, a stablefundamental-mode average power output of 2.11 W was obtained with a pulse duration of 140 ns, pulseenergy of 76 μJ and pulse repetition rate of 28 kHz. A theoretical analysis that describes the passiveQ-switching dynamics of GaAs is presented.     

低温GaAs被动调Q锁模Nd:Gd0.42 Y0.58VO4 混晶激光器特性研究

采用低温生长GaAs晶体作为被动饱和吸收体兼输出镜,实现了Nd:Gd0.42Y0.58VO4混晶激光器的调Q锁模运转.研究了Nd:Gd0.42Y0.588VO4激光器的基频运转特性.在输出镜透射率T=10%、腔长L=40 mm的情况下,当抽运功率为8.6 W时,获得激光输出功率3.78 W,光-光转换效率为43.9%.并测量了Nd:Gd0.42Y0.58VO4混晶被动调Q激光器的输出特性.实验结果表明激光器调Q运转阈值为2 W,当抽运功率为3.7 W时,激光器出现调Q锁模行为;当抽运功率为8.6 W时,激光器调Q锁模深度达70%以上,对应的脉冲包络重复频率为670 kHz,半峰全宽为180 ns,平均输出功率为1.35 W,光-光转换效率为15.7%.     

Diode-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber

The intracavity photon density is assumed to be of Gaussian spatial distributions and its longitudinal variation is also considered in the rate equations for a laser diode(LD)end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber.These space-dependent rate equations are solved numerically.The dependences of pulse width,pulse repetition rate,single-pulse energy,and peak power on incident pump power are obtained.In the experiment,the LD end-pumped passively Q-switched Nd:YVO4 laser with GaAs saturable absorber is realized and the experimental results are consistent with the numerical solutions.     

High-pulse-energy passively Q-switched quasi-monolithic microchip lasers operating in the sub-100-ps pulse regime

We present passively Q-switched microchip lasers with items bonded by spin-on-glass glue. Passive Q-switching is obtained by a semiconductor saturable absorber mirror. The laser medium is a Nd:YVO(4) crystal. These lasers generate pulse peak powers up to 20 kW at a pulse duration as short as 50 ps and pulse repetition rates of 166 kHz. At 1064 nm, a linear polarized transversal and longitudinal single-mode beam is emitted. To the best of our knowledge, these are the shortest pulses in the 1 microJ energy range ever obtained with passively Q-switched microchip lasers. The quasi-monolithic setup ensures stable and reliable performance.     

Pulse compression in AO Q-switched diode-pumped Nd:GdVO4 laser with V3+:YAG saturable absorber

By simultaneously using both an acoustic-optic (AO) modulator and a V³⁺:YAG saturable absorber in the cavity, for the first time to our knowledge, a diode-pumped doubly Q-switched Nd:GdVO ₄ laser has been realized. The dependence of pulse width, pulse energy and peak power on the incident pump power at determinate pulse repetition rate are measured. Under the absorbed pump power of 8.59 W, the pulse temporal profile of the AO-switching with the pulse duration of 14.5 ns, the double Q-switching with pulse duration of 7.6 ns at 10 kHz, and the passive Q-switching with pulse duration of 22.3 ns are obtained. The pulse duration is obviously compressed in contrast to the purely actively AO Q-switched laser or the purely passively Q-switched laser with V³⁺:YAG.     

Diode-pumped passively Q-switched Nd:GGG crystal with GaAs saturable absorber

We have experimentally studied the passive Q-switching performance of a diode-pumped Nd-doped gadolinium gallium garnet (Nd:GGG) laser with a GaAs saturable absorber. Stable Q-switched pulses as short as 9 ns with a repetition rate of 196.1 kHz have been obtained with an appropriately coated GaAs wafer used as the output coupler. At 12.44 W of the absorbed pump power, an average output power of 1.03 W has been obtained and the corresponding pulse energy and peak power are 5.25 μJ and 0.58 kW, respectively.     

6.5-ns actively Q-switched Nd:YVO_4 laser operating at 1.34 μm

With a plano-concave cavity,diode-pumped continuous-wave(CW) and actively Q-switched Nd:YVO4 laser operating at 1.34 μm is demonstrated.Maximum CW output power of 4.76 W and Q-switched average output power of 2.64 W are obtained with output coupler(transmission T = 3.9%).For the Q-switching operation,the theoretically calculated pulse energy and pulse width,with a pulse repetition frequency(PRF) range of 5-40 kHz,coincide with the experimental results.With a T = 11.9% output coupler,the maximum peak power of 24.3 kW and minimum pulse width of 6.5 ns are obtained when the PRF is 10 kHz.To the best of our knowledge,this is the shortest actively Q-switched pulse duration ever obtained in a 1.3-μm Nd-doped vanadate laser.     

中间镜式半导体可饱和吸收镜在Nd∶YVO4激光器中被动调Q特性研究

利用一种新型的中间镜式半导体可饱和吸收镜,成功实现了二极管泵浦Nd∶YVO4激光器调Q运转,获得的最短脉冲宽度为8.3 ns,最大平均输出功率为135 mW,重复频率在400 KHz到2 MHz之间.利用这种吸收体被动调Q得到的重复频率大大高于所知的大多数吸收体所进行的被动调Q的重复频率.