极端远紫外光刻的等离子体光源及其光学性质研究进展

现代技术的飞速发展需要集成电路不断小型化，因而开发下一代光刻光源以满足小型化的要求成为当前的一项紧迫任务。目前工业界确定的下一代光刻光源是波长为13．5nm的极端远紫外（EUV）光源，它能够把光刻技术扩展到32nm以下的特征尺寸，氙和锑材料的等离子体光源被认为是这种光源的最佳候选者。文章在介绍EUV光刻原理和EUV光源基本概念的基础上，讨论了目前研究得最多、技术最成熟的激光产生的和气体放电产生的等离子体EUV光源，对EUV光源的初步应用进行了简单介绍，并着重对氙和锑材料产生的等离子体发射性质和吸收性质的实验与理论研究进展进行了详细介绍与讨论。目前的理论研究进展表明，统计物理模型还不能很好地预测氙和锑等离子体的发射与吸收光谱，因此迫切需要发展细致能级物理模型，以得到更为精确的等离子体光学性质参数，并用于指导实验设计。提高EUV转换效率。     

Design and construction of a compact end-station at NSRRC for circular-dichroism spectra in the vacuum-ultraviolet region

A synchrotron‐radiation‐based circular‐dichroism end‐station has been implemented at beamline BL04B at the National Synchrotron Radiation Research Center (NSRRC) in Taiwan for biological research. The design and performance of this compact end‐station for measuring circular‐dichroism spectra in the vacuum‐ultraviolet region are described. The linearly polarized light from the beamline is converted to modulated circularly polarized light with a LiF photoelastic modulator to provide a usable wavelength region of 130–330 nm. The light spot at the sample position is 5 mm × 5 mm at a slit width of 300 µm and provides a flux greater than 1 × 10¹¹ photons s^?1 (0.1% bandwidth)^?1. A vacuum‐compatible cell made of two CaF₂ windows has a variable path length from 1.3 µm to 1 mm and a temperature range of 253–363 K. Measured CD spectra of (1S)‐(+)‐10‐camphorsulfonic acid and proteins demonstrated the ability of this system to extend the wavelength down to 172 nm in aqueous solution and 153 nm in hexafluoro‐2‐propanol.     

Bi靶激光等离子体极紫外光源以及碎屑辐射特性研究

激光等离子体极紫外光源具有体积小、稳定性高和输出波长可调节等优势,在极紫外光刻领域发挥着重要的作用。Bi靶激光等离子体极紫外光源在波长9～17 nm范围内具有较宽的光谱,可应用于制造极紫外光刻机过程中所需的极紫外计量学领域。利用平像场光谱仪和法拉第杯对Bi靶激光等离子体极紫外光源以及离子碎屑辐射特性进行了实验研究。在单脉冲激光打靶条件下,实验中观察到Bi靶激光等离子极紫外光谱在波长12.3 nm处出现了一个明显的凹陷,其对应着Si L-edge的吸收,是Bi元素光谱的固有属性。相应地在波长为11.8和12.5 nm位置处产生了两个宽带的辐射峰。研究了两波长光谱特性以及辐射强度随激光功率密度的变化。结果表明,在改变聚焦光斑大小实现不同激光功率密度（0.7×1010～3.1×1010 W·cm-2）过程中,当功率密度为2.0×1010 W·cm-2时两波长处的光辐射最强,其原因归结为Bi靶极紫外光辐射强度受激光能量用于支撑等离子膨胀的损失和极紫外光被等离子体再吸收之间的平衡制约所致。在改变激光能量实现不同激光功率密度过程中,由于烧蚀材料和产生两波长所需高阶离子随着功率密度的增加而增加,增强了两波长处的光辐射。进一步,研究了双脉冲激光对Bi靶极紫外光谱辐射特性影响,实验发现双脉冲打靶下原来在单脉冲打靶时出现在波长13～14 nm范围内的凹陷消失。最后,对单脉冲激光作用Bi靶产生极紫外光源碎屑角分布进行了测量。结果表明,当探测方向从靶面法线方向移动到沿着靶面方向上的过程中,探测到Bi离子动能依次减小,并且离子动能随激光脉冲能量降低而呈线性减小。此项研究有望为我国在研制极紫外光刻机过程所需的计量学领域提供技术支持和打下夯实的基础。     

脉冲激光辐照液滴锡靶等离子体极紫外辐射的实验研究

采用波长13.5 nm的极紫外光作为曝光光源的极紫外光刻技术是最有潜力的下一代光刻技术之一, 它是半导体制造实现10 nm及以下节点的关键技术. 获得极紫外辐射的方法中, 激光等离子体光源凭借转换效率高、收集角度大、碎屑产量低等优点而被认为是最有前途的极紫外光源. 本文开展了脉冲TEA-CO₂激光和Nd:YAG激光辐照液滴锡靶产生极紫外辐射的实验, 对极紫外辐射的谱线结构以及辐射的时空分布特性进行了研究.实验发现: 与TEA-CO₂激光相比, 较高功率密度的Nd:YAG激光激发的极紫外辐射谱存在明显的蓝移; 并且激光等离子体光源可以认为是点状光源, 其极紫外辐射强度随空间角度变化近似满足Lambertian分布.     

Micro-pinch formation and extreme ultraviolet emission of laser-induced discharge plasma

Extreme ultraviolet(EUV) source produced by laser-induced discharge plasma(LDP) is a potential technical means in inspection and metrology. A pulsed Nd:YAG laser is focused on a tin plate to produce an initial plasma thereby triggering a discharge between high-voltage electrodes in a vacuum system. The process of micro-pinch formation during the current rising is recorded by a time-resolved intensified charge couple device camera. The evolution of electron temperature and density of LDP are obtained by optical emission spectrometry. An extreme ultraviolet spectrometer is built up to investigate the EUV spectrum of Sn LDP at 13.5 nm. The laser and discharge parameters such as laser energy, voltage, gap distance,and anode shape can influence the EUV emission.     

帽层对极紫外多层膜反射特性影响分析

介绍了在极紫外波段，利用帽层材料来减少多层膜反射镜因外部环境干扰而造成的反射率降低，使多层膜光学元件能够长时间稳定工作.计算了在139nm波长处Mo/Si极紫外多层膜反射镜在表面镀制不同帽层材料时的理论最大反射率，利用单纯形调优法，对帽层和多层膜的周期厚度进行优化，同时把分层理论用于多层膜帽层优化,可使多层膜的反射率得到进一步提高.分析了在加入帽层前后多层膜外层电场强度的分布变化情况. 关键词： 多层膜 反射率 帽层 极紫外     

EUV波段电光成像系统分辨率的实验研究

基于微通道板 (MicrochannelPlate ,MCP)探测器件设计一套成像系统 ,用于对极紫外 (ExtremeUl traviolet,EUV)波段的光进行成像。结果在 13,17 1,19 5和 30 4nm处获得了一个宽度为 3mm的狭缝的像 ,其相应的空间分辨率分别为 85 ,12 0 ,182和 4 95 μm ,最佳为 85 μm ,对应波长 13nm ,而且波长越短 ,分辨率越高 ,图像的亮度也越高。     

基于脉冲CO2激光锡等离子体光刻光源的极紫外辐射光谱特性研究

研究了不同条件下脉冲放电CO₂激光烧蚀平板锡靶产生的等离子体极紫外辐射特性, 设计并建立了一套掠入射极紫外平焦场光栅光谱仪, 结合X射线CCD探测了光源在6.5～16.8 nm波段的时间积分辐射光谱,得到了极紫外光谱随激光脉宽, 入射脉冲能量及背景气压的变化规律。实验结果发现：入射激光脉冲能量在30～600 mJ变化时,极紫外辐射光谱的强度随辐照激光脉冲能量的增加而增加, 但并不是线性关系, 具有饱和效应, 且产生极紫外辐射的脉冲能量阈值约为30 mJ,当激光脉冲能量为425 mJ时具有最高的转换效率,此时中心波长13.5 nm处2%带宽内的转换效率约为1.2%。激光脉冲半高全宽在50～120 ns范围内变化时, 极紫外辐射光谱的峰值位置均位于13.5 nm,光谱形状几乎没有什么变化, 但是脉宽从120 ns变到52 ns后,由于激光功率密度的提高,极紫外辐射强度也随之增强了约1.6倍。极紫外光谱的强度随背景气压的增大而迅速下降, 当腔内空气气压为200 Pa时, 极紫外辐射光子几乎被全部吸收,而当缓冲氦气气压为7×104 Pa时,仍能够探测到微弱的极紫外辐射信号,计算表明100 Pa的空气对13.5 nm极紫外光的吸收系数为3.0 m-1,而100 Pa的He气的吸收系数为0.96 m-1。     

基于高次谐波产生的极紫外偏振涡旋光

突破传统涡旋光场束缚,发展短波极紫外涡旋光场是实现阿秒脉冲偏振控制的有效途径.本研究利用自制的平场光栅光谱仪和超快时间保持的单色仪,以800 nm,35 fs高斯或具有偏振奇点的涡旋光脉冲驱动诱导氩原子产生高次谐波,分别获得相应的高次谐波光谱以及谐波谱单阶光源的分布.实验结果表明,基于高次谐波产生实现近红外波段的涡旋光束特性转移到极紫外波段,优化后的极紫外涡旋可以实现每秒108光子数输出.同时发现极紫外波段的涡旋场和高斯场高次谐波产生具有相似相位匹配机制.基于高次谐波产生的极紫外波段的偏振涡旋光为探究和操控原子分子量子态的含时演化动力学以及形成阿秒矢量光束提供了重要的方法和技术手段.     

极紫外平场光栅光谱仪的研制和性能测试

研制了一台高分辨率极紫外光谱仪,用于磁约束等离子体诊断。采用一块具有平场特性的全息球面变线距光栅作为分光元件,光栅公称线密度为1 200 lines·mm-1,掠入射角为3°。一台可深度制冷、背照式面阵CCD作为光谱探测器,用机械快门控制曝光时间。通过CCD在光谱聚焦面的移动,可以记录的光谱范围为5～50 nm。用Penning放电光源测试了光谱仪的性能; 利用光源的标准谱线,进行了波长标定,波长精度为0.003 nm,并计算出系统各参数的实际值;当入缝宽度设置为30 μm时,在20 nm附近,光谱分辨率达0.015 nm,达到设计指标。     

22nm极紫外光刻物镜热和结构变形及其对成像性能影响

极紫外光刻技术(EUVL)是半导体制造实现22nm及其以下节点的下一代光刻技术。在曝光过程中,EUVL物镜的每一面反射镜吸收35%～40%的入射极紫外(EUV)能量,使反射镜发生热和结构变形,影响投影物镜系统的成像性能。基于数值孔径为0.3,满足22nm技术节点的产业化EUV投影物镜,采用有限元分析(FEA)的方法研究反射镜变形分布,再将变形导入光学设计软件CODE V中,研究反射镜变形其对成像特性的影响。研究结果表明:当达到硅片的EUV能量为321mW,产量为每小时100片时,反射镜最高升温9.77℃,通光孔径内的最大变形为5.89nm;若采用相干因子0.5的部分相干光照明,变形对22nm线宽产生6.956nm的畸变和3.414%的线宽误差。     

Gd靶激光等离子体6.7nm光源的实验研究

本文对Gd靶激光等离子体极紫外光源进行了实验研究, 在 6.7 nm附近获得了较强的辐射, 并研究了6.7 nm 附近光辐射随打靶激光功率密度变化的规律以及收集角度对极紫外辐射的影响. 同时, 对平面Gd靶激光等离子光源的离子碎屑角分布进行了测量, 发现从靶面的法线到沿着靶面平行方向上Gd离子数量依次减少. 进一步研究结果表明采用0.9 T外加磁场的条件下可取得较好的Gd 离子碎屑阻挡效果.     

Demonstration of fiber-laser-produced plasma source and application to efficient extreme UV light generation

Efficient generation of extreme UV (EUV) light at lambda = 13.5 nm from a bulk Sn target has been demonstrated by using a fiber laser. The conversion efficiency from the 1064 nm IR to the EUV was measured to be around 0.9% into 2pi steradians within a 2% bandwidth. To the best of our knowledge, this is the first time an all-fiber system was used to generate EUV or soft x rays.     

极紫外波段Ar光谱分析在EAST偏滤器杂质屏蔽效应研究中的应用

在托卡马克偏滤器区域充入杂质气体是检验偏滤器杂质屏蔽效应的重要手段。利用快速极紫外EUV光谱仪对EAST托克马克装置上开展的偏滤器Ar杂质注入实验进行观测。结合NIST原子光谱数据库对2～50 nm范围内不同电离态Ar的线光谱进行了谱线识别,识别出Ar Ⅳ,Ar Ⅸ-Ⅺ,Ar ⅩⅣ-ⅩⅥ等若干个电离态的谱线。为了同时观测等离子体不同区域的Ar杂质行为,在杂质注入实验时重点监测Ar ⅩⅥ35.39 nm(Ar ⅩⅥ电离能918.4 eV,主要分布在等离子体芯部)和Ar Ⅳ44.22 nm(Ar Ⅳ电离能9.6 eV,主要分布在等离子体边界)这两条谱线。利用该两条谱线强度随时间演化的结果初步分析了偏滤器杂质屏蔽效应。在同一充气口不同等离子体位形下的实验结果表明偏滤器对于从偏滤器区域注入Ar杂质的屏蔽效果优于从主等离子体区域注入,并且下偏滤器及内冷泵的综合粒子排除能力优于上偏滤器。     

Observations of extreme ultraviolet emission from plasma produced by capillary discharges

This study reports the results of a pilot experiment concerning observations of extreme ultraviolet emission from plasma produced by the capillary discharges. A few kA current was applied across the gas-filled alumina capillary (1 mm diameter and 8 mm long) to generate radiation in the EUV region (12–63 nm). Spectroscopic studies were carried out by means of a XEUV spectrometer which was upgraded for special lithography purposes. The results obtained from the EUV spectroscopic measurements provided information about the radiation processes from xenon and argon plasma and testifies that given capillary is an effective source of EUV emission. Additionally we showed a simulation which describes plasma dynamics parameters and dynamics of various ionization stages in capillary discharge. Our computer simulation confirmed the presence of ions, which spectra was registered in the experiment.     

Parametric optimization of a narrow-band 13.5-nm emission from a Li-based liquid-jet target using dual nano-second laser pulses

We demonstrate the applicability of a Li-based liquid jet as a regenerative source of narrow-band extreme-ultraviolet (EUV) emission at 13.5 nm. It was found that a conventionally used single laser pulse did not produce optimum plasma conditions for a low-Z target, like Li. It was shown that deployment of dual nano-second laser pulses enhanced the in-band EUV conversion efficiency (CE) at 13.5 nm in 2 sr by three times its value using a single laser pulse. Dependence of the emission spectra and EUV CE on the delay time between dual laser pulses revealed that the emission at 13.5 nm from Li ions was preferably enhanced at a lower plasma temperature compared to that at 13.0 nm from oxygen ions.     

Laser-induced liquid tin discharge plasma and its EUV spectra

Laser-induced discharge plasmas(LDPs) have the potential to be inspection and metrology sources in extreme ultraviolet(EUV) lithography. An LDP EUV source was developed to avoid tin electrode erosion in which a tin pool was used as a cathode. A CO_2 pulse laser was focused on the liquid tin target surface, and then a breakdown occurred in a very short time. The voltage-current characteristics of the discharge oscillated, lasting for several microseconds, and an RLC fitting model was used to obtain the inductance and resistance. An intensified chargecoupled device(ICCD) camera was used to investigate the dynamics of LDP, which can explain the formation of a discharge channel. The EUV spectra of laser-induced liquid tin discharge plasma were detected by a grazing incident ultraviolet spectrometer, compared with a laser-produced tin droplet plasma EUV spectrum. To explain the EUV spectrum difference of laser-induced liquid tin discharge plasma and laser-produced tin droplet plasma,the collision radiation(CR) model combined with COWAN code was used to fit the experimental EUV spectrum, which can estimate the electron temperature and density of the plasma.     

Development of a target for laser-produced plasma EUV light source using Sn nano-particles

Nano-structured and tin-based targets have been fabricated by the pulsed-laser ablation method, in order to develop efficient and debris-free targets for the laser-produced plasma extreme ultraviolet (EUV) light source at 13.5 nm. Characteristic spectra that have the radiation peak around 13.5 nm were obtained from CO₂ laser produced plasma using the films as a target. A nano-structured target produced EUV light as intense as a bulk target and a narrower line spectrum at 13.5 nm than a bulk target. PACS 32.30.Rj; 52.38.-r; 52.38.Mf; 61.46.+w; 68.37.-d     

极紫外光源锡液滴靶的检测研究

采用正交放置的两路CCD,基于图像采集及处理的方法,建立了极紫外光源锡液滴靶发生装置的锡液滴检测系统,可以实时监测锡液滴的运动状态及稳定性。对本实验室频率为34kHz的锡靶发生器产生的液滴进行了锡液滴监测实验。监测结果显示,锡液滴直径约为137μm,平均间距为375μm,稳定性较好,并对水平面上横向稳定性进行了分析。     

S-和R-五味子丙素非对映异构体的圆二色谱研究

园二色谱(CD)是测定有机化合物绝对构型的常用方法。文章用圆二色谱仪对合成的4个联苯类化合物进行了表征(2个非桥键联苯化合物和2个桥键联苯化合物),得到两对几乎完全对称的圆二色谱谱图。根据其圆二色谱Cotton效应确定了4个化合物的联苯键的绝对构型。化合物3分别在256 nm出现负的Cotton效应,且在220 nm出现正的Cotton效应,表明这个化合物是S-构型;而化合物3’出现了相反的Cotton效应,表明这个化合物是S-构型。由化学相关法可以得知化合物2是R-构型, 化合物2’是R-构型。通过这些数据得出结论, 以S-噁唑啉为手性合成子的Ullmann反应得到的是S-构型联苯类化合物, 而以S-噁唑啉为手性合成子的Ullmann反应得到的是R-构型型联苯类化合物。