电子自旋弛豫时间测量中电子自旋扩散的影响

在光注入电子自旋包的不同位置进行时间分辨的泵浦-探测实验时,发现电子自旋信息的退化率不同.揭示了电子自旋扩散对准确测量电子自旋弛豫时间的影响,获得了自旋输运动力学方程的解.对该解进行研究发现,电子自旋扩散对电子自旋弛豫时间测量值的影响可以归结为两个含时间的因子,其中一个因子与泵浦光斑中心和探测光斑中心的距离有关,另一个因子与泵浦光斑尺寸有关.提出了自旋弛豫时间测量实验中消除扩散影响的条件:1)泵浦光斑和探测光斑中心重叠;2)泵浦光斑尺寸足够大.结果表明,泵浦光斑尺寸越大,探测光斑中心越接近于泵浦光斑的中心,则扩散对自旋弛豫时间测量值所造成的影响就越小.     

电子自旋共振中的g因子

凡具有未偶电子的物质,都可作为电子自旋共振的研究对象,将其置于恒定磁场(?)中时,会引起因电子自旋体系与外磁场相互作用所产生的塞曼(Zeeman)能级分裂,如果在垂直外磁场(?)方向上再加一频率为V的电磁辐射线偏振磁场(起作用的是它的右旋圆偏振分量),当满足hv=gμ_BB时,就会发生塞曼能级间的共振吸收(和辐射)现象,这就是电子顺磁共振(EPR)。理论和实验     

用单个场效应管观测核磁共振和电子自旋共振信号

本文介绍了单个结型场效应管构成的边缘振荡磁共振探头，用它在不同的工作频率上稳定而可靠地观测到了核磁共振和电子臼旋共振信号，有很好的信噪比，振荡器最高频率可达 １３０ ＭＨｚ．     

半导体量子阱中电子自旋弛豫和动量弛豫

根据电子自旋轨道耦合对自旋极化弛豫影响的DP机理进一步导出了半导体中电子自旋弛豫与动量弛豫及载流子浓度的关系，并采用飞秒抽运探测技术在室温下测量AlGaAs/GaAs 多量子阱中载流子浓度在 1×10¹⁷—1×10¹⁸cm^-3范围内，电子自旋弛豫时间由58ps增加至82 ps的变化情况，与理论计算值符合，说明了随着载流子浓度的增加，载流子间的频繁散射加速了电子动量驰豫，减弱了电子自旋轨道耦合作用，从而延长了电子自旋寿命. 关键词： 电子自旋轨道耦合 电子自旋弛豫和动量弛豫 飞秒光谱技术     

碳纳米管的电子自旋共振研究

在直流碳弧法中,用氦气氛和气氛制备碳纳米管,在７７０℃下将阴极沉积物氧化至原重量的１％,得到纯的碳纳米管,测量不同气氛及压强下制备的碳纳米管的室温电子自旋共振说,讨论了不同惰性气氛及压强对所制备碳管的ＥＳＲ谱线型,ｇ因子,线宽的影响。     

光纤辐照缺陷的电子自旋共振研究

用电子自旋共振方法研究光纤的γ射线辐照缺陷情况。结果发现，射线辐照产生一系列同磁缺陷，缺陷中心的浓度随着辐照剂量的增加而增加；缺陷的种类主要是Ｅ＇心、非桥连氧空穴心和过氧根（ＯＨＣ）心，并对它们形成的机制进行了分析和讨论。 关键词：     

微波电子自旋共振实验波形分析

详细分析了微波段用可调反射式谐振腔做电子自旋共振实验中共振信号的形成原理,分析指出下凹和上凸波形都为共振吸收信号,当波形的上下两部分等大时,为色散信号,波形的上下两部分不等大时,为色散信号和共振吸收信号的合成。从理论上解释了共振信号的变化所反映的物理过程。     

微波电子自旋共振谱仪的调试

从实验操作者的角度，对微波电子自旋共振谱仪的原理及实验现象进行分析。     

Spin concentration in a possible ESR dosimeter: An electron spin echo study on X-irradiated ammonium tartrate

Several single crystals and powder samples of ammonium tartrate, recently proposed as a possible ESR dosimeter, have been X-irradiated with different doses. The total radical concentration has been determined by quantitative cw ESR, by comparison with a standard. The samples have been studied by electron spin echo spectroscopy. The two-pulse echo decay has been obtained and simulated by a single exponential function for different values of the microwave power of the pulses and for different pulse lengths. The dependence of the phase memory time TM on the microwave power has been exploited to get information on the contribution of the instantaneous diffusion to spin dephasing. At room temperature in the range of radical concentrations of 10(18)-10(19) spins/cm3 the instantaneous diffusion is the dominant spin dephasing mechanism. The linear dependence of the instantaneous diffusion on the total concentration of the radicals is in agreement with the theory. From the latter result we conclude that the average radical-radical distance corresponds to a random distribution of the radicals in the matrix. A simple method of measuring the radical concentration by the ESE decays in powder samples of irradiated ammonium tartrate is described.     

微米气室铯原子自旋噪声谱

利用自旋噪声谱技术研究了无缓冲气体133Cs原子气室的自旋动力学和展宽机制.在宏观原子气室中,自旋弛豫速率失谐频率谱的线型为高斯分布;在空间局域较强的微米气室中,自旋弛豫速率失谐频率谱的线型为洛伦兹分布.实验测量得到的自旋弛豫速率失谐频率谱的展宽约4 GHz,明显大于宏观原子气室中约度强烈依赖于激光相对于原子共振跃迁的频率失谐;在微米气室中,由于较强的均匀展宽,总噪声的失谐频率谱中心处出现明显的凹陷.通过建立简化的物理模型来计算微米气室的展宽机制,在实验与理论中解释了原子的均匀展宽特性.     

Spin relaxation in nanowires by hyperfine coupling

Hyperfine interactions establish limits on spin dynamics and relaxation rates in ensembles of semiconductor quantum dots. It is the confinement of electrons which determines nonzero hyperfine coupling and leads to the spin relaxation. As a result, in nanowires one would expect the vanishing of this effect due to extended electron states. However, even for relatively clean wires, disorder plays a crucial role and makes electron localization sufficient to cause spin relaxation on the time scale of the order of 10 ns. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

基于NMR自旋弛豫技术的蛋白质动力学研究

蛋白质的三维结构在很多情况下不能很好地解释其在生理过程中的作用机制. 动力学研究能够获悉蛋白质在不同时间尺度下的内运动信息,建立起动态结构和生物功能的联系. 该文综述了通过NMR自旋弛豫技术研究蛋白质动力学的原理和方法：ps~ns的快运动分析主要采用约化谱密度函数映射和Modelfree方法;μs~ms的慢运动涉及化学/构象交换过程,常借助CPMG和R_1ρ弛豫色散手段. 基于NMR的蛋白质动力学研究,将蛋白质科学从三维空间结构推进到四维时空结构的新层面.     

Spin dynamics in magnetic materials investigated by muon spin relaxation

We present a quantitative analysis of the temperature dependence of the muon spin relaxation rate measured in simple magnets. We consider the low temperature, critical and high temperature regimes. This revised version was published online in August 2006 with corrections to the Cover Date.     

InAs单层和亚单层结构中的自旋动力学研究

利用偏振时间分辨光谱和时间分辨Kerr旋转谱，研究了GaAs中的InAs单层和亚单层的电子自旋动力学.实验发现，在非共振激发条件下，厚度为1/3单层的InAs亚单层中电子自旋弛豫寿命长达3.4ns，而1个单层厚的InAs层的电子自旋寿命只有0.48ns；而在共振激发条件下，亚单层结构中的电子自旋寿命大大减少，只有70ps，单层InAs中电子自旋寿命没有显著变化.分析表明，低温下InAs单层和亚单层结构中，Bir-Aronov-Pikus(BAP)自旋弛豫机理占主导地位.通过改变材料结构特性和激发条件来改变电子空穴的空间相关性，从而达到控制自旋弛豫的目的. 关键词： InAs亚单层 自旋弛豫 BAP机理     

Muon Spin Dynamics and Sites in GdNi5

In GdNi₅, the muon localizes at the 3f interstitial site and below 80K a second muon site becomes populated, the so-called 6_ring site. This ring site is metastable and the muon hops to the 3f site. We determine the mean time of stay of the muon in the ring site and show that it is governed by a multi-phonon quantum diffusion process. The coincidence energy is measured to be E _a =272(10)K and the tunneling matrix element J=0.11(2)meV.     

InGaN薄膜中电子自旋偏振弛豫的时间分辨吸收光谱研究

采用飞秒时间分辨圆偏振光抽运-探测光谱对In_01Ga_09N薄膜的电子自旋注入和弛豫进行了研究.获得初始自旋偏振度约为02,此结果支持在圆偏振光激发下,重、轻空穴带的跃迁强度比为3∶1,而不支持1∶1或1∶094的观点同时获得自旋偏振弛豫时间为490±70ps,定性分析了自旋弛豫机理,认为BAP机理是电子自旋弛豫的主要机理. 关键词： 电子自旋 InGaN 自旋极化 自旋弛豫     

Investigation of the possibilities of measuring relaxation parameters by the EPR method within the framework of the concept of spin temperature

Procedures for measuring some relaxation parameters of uniformly and nonuniformly broadened systems by the EPR method in a high-temperature approximation are proposed. The theoretical consideration is based on the concept of spin temperature and Provotorov's equations. A trial field is used along with a saturating superhigh-frequency field. The measuring methods for the time of the transverse relaxation T₂ in the case of uniform broadening and some relaxation parameters or their combinations in the case of nonuniform broadening are based on measuring the frequency characteristics of the system when the absorption becomes zero at the frequency of the trial field. Institute of Physical and Organic Chemistry, National Academy of Sciences of Belarus, 13, Surganov Str., Minsk, 220072. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 2, pp. 266–270, March–April, 1999.     

Spin polarization of electrons in magnetic heterostructures

The scattering of nonspin-polarized electrons on a heterostructure containing a magnetic element (a nonmagnetic barrier adjoining a magnetic one from left or right, or a magnetic well between two nonmagnetic barriers) is considered. The transmission coefficients and degrees of the spin polarization of electrons transmitted through these structures are obtained.