共查询到19条相似文献,搜索用时 921 毫秒
1.
SnO2-TiO2薄膜载体对Au-Pt纳米颗粒电化学性能的影响 总被引:1,自引:1,他引:0
采用真空镀膜法在玻碳(GC)电极表面修饰SnO2-TiO2薄膜, 在SnO2-TiO2/GC复合电极表面组装Au-Pt双金属纳米颗粒, 制得Au-Pt/SnO2-TiO2/GC复合电极. 通过循环伏安法(CV)研究了SnO2-TiO2薄膜载体对Au-Pt双金属纳米颗粒电化学性能的影响; 采用扫描电镜(SEM)及X射线光电子能谱(XPS)对Au-Pt在SnO2-TiO2薄膜沉积的形貌及结构进行了表征. 研究结果表明, 10 nm的Au-Pt双金属纳米颗粒均匀地组装于SnO2-TiO2薄膜表面; SnO2-TiO2薄膜载体改善了复合电极抗CO中毒能力; Au-Pt双金属合金的形成提高了Pt 对甲醇氧化的电催化能力, SnO2-TiO2薄膜载体又使Pt纳米粒子d空轨道增多, 提高了Au-Pt双金属纳米颗粒的稳定性和催化性能. 相似文献
2.
3.
以SnCl2·2H2O及无水乙醇为原料,利用溶胶-凝胶法(sol-gel)制备了SnO2纳米薄膜.在溶胶中添加了多种添加剂,用X射线衍射仪(XRD)、扫描电镜(SEM)和光致发光谱仪(PL)研究了添加剂对薄膜结构、形貌和光学性质的影响,结果表明氨水的加入能抑制晶粒快速长大,未加入氨水的SnO2薄膜在750 ℃和900 ℃热处理后平均晶粒尺寸分别为23.1 nm和50.5 nm,而加入氨水后的平均晶粒尺寸分别为19.6 nm和42.8 nm;丙三醇(GCR)的添加能抑制团聚和防止深裂痕,使薄膜光滑、平整;表面活性剂聚乙二醇2000、聚乙二醇4000能使薄膜产生空隙和大量孔洞,从而大大增加薄膜比表面积,使之气敏性能显著提高,同时还发现,相同量的聚乙二醇2000和聚乙二醇4000,后者产生的孔洞比前者密;对光致发光性质进行了研究,结果表明聚乙二醇2000的加入使发光强度增大. 相似文献
4.
5.
6.
7.
磁控溅射制备的铜钒氧化物薄膜及其电化学性能 总被引:1,自引:1,他引:0
采用射频磁控溅射技术在硅基底上分别制备了无掺杂和掺杂Cu的氧化钒薄膜. X射线衍射(XRD)分析和扫描电子显微镜(SEM)观察表明, 无掺杂的薄膜为多晶V2O5, 掺杂Cu的薄膜为非晶态. X射线光电子能谱(XPS)分析结果表明, 掺杂Cu的薄膜为铜钒氧化物膜, 其中Cu离子表现为+2价, V离子为+4与+5价的混合价态. 随着Cu掺杂量的增大, +4价V的含量增加. 电化学测试结果表明, V2O5薄膜在掺杂Cu以后其放电容量有显著的提高, 其中Cu2.1VO4.4薄膜在100次循环后容量还保持为83.4 μA·h·cm-2·μm-1, 表现出较高的放电容量和较好的循环性能. 相似文献
8.
将PtO Pt纳米粒子膜与TiO2 ,SnO2 纳米粒子膜复合 ,利用PtO Pt纳米粒子膜作为插入电极和催化剂 ,设计并研制出一类新型双层结构复合膜气体传感器 .采用TEM和SEM对薄膜的显微结构进行了表征 .对空气中 4 0 %H2 的氢敏性能研究表明 :2 0 0℃时 ,TiO2 /PtO Pt复合膜对氢气的灵敏度为 70 % ,而TiO2 纳米粒子膜无响应 .10 0℃时 ,SnO2 /PtO Pt复合膜的灵敏度为 92 % ,同样条件下 ,SnO2 纳米粒子膜的灵敏度仅为 4% .说明PtO Pt纳米粒子膜的催化作用能够显著提高TiO2 和SnO2 膜的氢敏性能 .另外 ,TiO2 /PtO Pt复合膜和SnO2 /PtO Pt复合膜均对空气中H2 有很高的选择性 相似文献
9.
10.
用XRD, XPS, CO-TPR, NH3-TPD, SO2-TPD和IR等方法表征了SnO2-TiO2固溶体催化剂的物理化学性质. 不同配比的SnO2和TiO2均可形成均一的具有金红石结构的连续固溶体,其晶粒度比单纯的SnO2或TiO2的晶粒度小. SnO2-TiO2固溶体的比表面积随SnO2含量的增大呈火山形变化,说明在SnO2-TiO2固溶体中SnO2可阻止TiO2由锐钛矿型变为金红石型过程中比表面积的减小,而TiO2则提供了维持大表面的结构框架. SnO2倾向于在固溶体表面偏析,固溶体的表面氧含量高于单纯SnO2的表面氧含量而低于单纯TiO2的表面氧含量. SnO2, TiO2和SnO2-TiO2表面含有能被CO还原的吸附氧和晶格氧,被还原的SnO2, TiO2和SnO2-TiO2的表面晶格氧的数量仅占所有晶格氧的0.001%, 说明CO只使部分晶格氧还原并生成氧阴离子空穴. TiO2表面没有酸性, SnO2和SnO2-TiO2呈微弱酸性. 经CO还原的SnO2-TiO2上存在大量的强碱中心,说明SnO2和TiO2之间发生了协同作用. SnO2-TiO2固溶体的这些物化性质均十分有利于SO2+NO+CO的氧化还原反应. 相似文献
11.
Ultrathin tin oxide films were deposited on SiO2 nanoparticles using atomic layer deposition (ALD) techniques with SnCl4 and H2O2 as the reactants. These SnO(x) films were then exposed to O2 and CO gas pressure at 300 degrees C to measure and understand their ability to serve as CO gas sensors. In situ transmission Fourier transform infrared (FTIR) spectroscopy was used to monitor both the charge conduction in the SnO(x) films and the gas-phase species. The background infrared absorbance measured the electrical conductivity of the SnO(x) films based on Drude-Zener theory. O2 pressure was observed to decrease the SnO(x) film conductivity. Addition of CO pressure then increased the SnO(x) film conductivity. Static experiments also monitored the buildup of gas-phase CO2 reaction products as the CO reacted with oxygen species. These results were consistent with both ionosorption and oxygen-vacancy models for chemiresistant semiconductor gas sensors. Additional experiments demonstrated that O2 pressure was not necessary for the SnO(x) films to detect CO pressure. The background infrared absorbance increased with CO pressure in the absence of O2 pressure. These results indicate that CO can produce oxygen vacancies on the SnO(x) surface that ionize and release electrons that increase the SnO(x) film conductivity, as suggested by the oxygen-vacancy model. The time scale of the response of the SnO(x) films to O2 and CO pressure was also measured by using transient experiments. The ultrathin SnO(x) ALD films with a thickness of approximately 10 A were able to respond to O2 within approximately 100 s and to CO within approximately 10 s. These in situ transmission FTIR spectroscopy help confirm the mechanisms for chemiresistant semiconductor gas sensors. 相似文献
12.
采用超声搅拌化学浴法(UCBD)在SnO2:F透明导电玻璃衬底上制备了CdS薄膜.研究了退火和CdCl2处理对UCBD-CdS薄膜的表面形貌、晶体结构和直接带隙的影响,比较了沉积时间对UCBD-CdS薄膜中CdS聚集体颗粒大小和堆积致密性的影响.结果表明,CdCl2处理可使CdS聚集体中的小颗粒重新熔合在一起,但CdS聚集体的大小并没有改变.在UCBD-CdS薄膜的沉积过程中,CdS薄膜的横向和纵向生长速率之比会随着沉积时间的不同而改变,且沉积时间是获得大颗粒的CdS聚集体和致密的UCBD-CdS薄膜的重要影响因素.当沉积时间为40min时,获得的UCBD-CdS薄膜较致密,CdS聚集体的大小为180nm,膜厚为80.8nm,适合作为薄膜太阳电池的窗口层. 相似文献
13.
等离子体化学气相沉积(PCVD)法可制备多孔柱状结构的SnO_2超微粒非晶薄膜,本文研究了薄膜在真空吸附体系中的膜电阻和IR谱随温度变化特性及乙二醇、正丙醇、异丙醇、乙醇和甲醇的气敏灵敏度,提出SnO_2薄膜上吸附氧O_2~-、O~-对醇的氧化机理 1实验与结果 自制PCVD装置抽空后充入40 Pa的O_2,加高频出现辉光,再充入CnCl_4使辉光转为蓝 相似文献
14.
15.
16.
17.
利用射频磁控溅射法在玻璃衬底上制备了Ga掺杂的TiO2薄膜,并在真空中于550 ℃下进行了2 h的退火处理。采用XRD、SEM、UV-Vis和PL光谱对薄膜进行了表征。XRD结果提示,在溅射功率为200 W,室温下制备的TiO2薄膜具有混晶结构,且退火后的晶粒有长大的趋势。SEM分析表明,掺Ga薄膜的颗粒分布得较为均匀并存在尺寸变小的趋势,且出现有利于提高光催化性能的岛状结构,其平均颗粒尺寸为50 nm。UV-Vis透过谱指出,掺Ga后的TiO2薄膜吸收边发生了明显红移,且退火后进一步红移了10~50 nm。通过接触角的测量与计算可知,550 ℃退火2 h后的薄膜具有良好的亲水性。光催化降解结果表明:样品具有较强的光催化能力。当用低功率(15 W)紫外灯照射8 h后,Ga掺杂的纳米TiO2薄膜样品对亚甲基蓝溶液的降解率最高可达到71.8%。 相似文献
18.
以四氯化锡和三氯化锑为前驱体,通过静电纺丝技术制备了柔性透明的自支撑氧化锡锑(ATO)纳米纤维膜.研究结果表明,该柔性ATO纤维膜具有四方相金红石晶体结构,且呈无规的纤维网状分布.当前驱体煅烧温度分别为520℃和700℃时,纤维的平均直径为200和150 nm;组成纤维的颗粒的平均粒径为10和19 nm;可见光透过率为72%和80%;电阻率为5.23和2.20Ω·cm.该自支撑ATO纳米纤维膜还显示出优异的柔韧性,在弯曲500次后其电阻率基本不变. 相似文献
19.
Kamat PV Barazzouk S Hotchandani S Thomas KG 《Chemistry (Weinheim an der Bergstrasse, Germany)》2000,6(21):3914-3921
Clusters of C60-aniline dyads are deposited as thin films on nanostructured SnO2 electrodes under the influence of an electric field. At low applied DC voltage (<5 V) the clusters in toluene/acetonitrile (1:3) mixed solvent grow in size (from 160 nm to approximately 200 nm in diameter) while at higher voltages (>50 V) they are deposited on the electrode surface as thin films. The C60- aniline dyad cluster films when cast on nanostructured SnO2 films are photoelectrochemically active and generate photocurrent under visible light excitation. These nanostructured fullerene films are capable of delivering relatively large photocurrents (up to approximately 0.2 mA cm(-2), photoconversion efficiency of 3-4%) when employed as photoanodes in photoelectrochemical cells. Both luminescence and transient absorption studies confirm the formation of charge transfer product (C60 anion) following UV/Vis excitation of these films. Photo-induced charge separation in these dyad clusters is followed by the electron injection from C60-anion moiety into the SnO2 nanocrystallites. The oxidized counterpart is reduced by the redox couple present in the electrolyte, thus regenerating the dyad clusters. The feasibility of casting high surface area thin fullerene films on electrode surfaces has opened up new avenues to utilize dyad molecules of sensitizer bridge donor type in light energy conversion devices, such as solar cells. 相似文献