纳米粒子碰撞下的单晶硅表面非晶相变

应用分子动力学模拟研究了在纳米粒子的碰撞作用下，单晶硅表面局部区域的物相转变和结构演变. 模拟表明在碰撞过程中，基体表面碰撞区域从初始的单晶体转变为熔融态，经历过冷液体状态之后凝固成为了非晶态. 模拟揭示的凝固转变温度与硅玻璃化温度很接近. 在颗粒反弹阶段，与发生的冷却过程和压力去除过程相一致，碰撞区域从瞬态的、高度无序、高度致密的过冷状态开始，经历了结构有序度的增加和向相对疏松状态的转变. 碰撞之后所得非晶硅的平均配位数为5.27，其中配位数5，6原子构成了碰撞区域原子总数的61.5%.     

质子和中子在硅中位移损伤等效性计算

基于蒙特卡罗软件Geant4,探讨质子与硅的库仑散射和核反应及中子与硅的核反应产生反冲原子沉积非电离能量的过程,建立质子和中子在硅中的非电离能量阻止本领计算方法。在此方法中,描述了原子间库仑散射的物理过程,模拟带电粒子与晶格原子之间的屏蔽库仑散射。计算得到不同能量质子和中子在硅中因库仑散射和核反应产生反冲原子的非电离能量沉积及阻止本领的等效性,计算结果与中子ASTM标准及文献计算得到的质子数据符合很好。     

The production of frenkel defects in fcc metals

Experimental results from polycrystalline and single crystalline samples of aluminum are analyzed in terms of how electron irradiation causes atomic displacements along 〈100〉 and 〈110〉 crystallographic directions. This interpretation is made for atoms that recoil with energies sliihtly greater than the threshold energy. It is noted that definite correlations exist between some of the substages of stage I and the natural required behavior of recoiling atoms. By applying this criterion to polycrystalline samples, one establishes a means for identifying other phenomena; e.g. multiple atomic displacements, spontaneous recombination, etc.     

Explicit designs of spin chains for perfect quantum state transfer

For the process of electron-electron (e-e) bremsstrahlung the momentum and energy distributions of the recoiling electrons are calculated in the laboratory frame. In order to get the differential cross section and the photon spectrum for target electrons which are bound to an atom, these formulae are multiplied by the incoherent scattering function and numerically integrated over the recoil energy. The effect of atomic binding is most pronounced at low energies of the incident electrons and for target atoms of high atomic numbers. The results are compared to those of previous calculations.     

300 eV—1GeV质子在硅中非电离能损的计算

非电离能损(NIEL)引起的位移损伤是导致空间辐射环境中新型光电器件失效的主要因素.引起质子在硅中NIEL的作用机理有库仑相互作用和核相互作用,质子能量范围从位移损伤阈能到1 GeV.当质子能量位于低能区时,库仑相互作用占主导地位,采用解析方法和TRIM程序计算NIEL;当质子能量位于高能区时,NIEL主要来自质子与靶原子核的弹性和非弹性相互作用,使用MCNPX/HTAPE3X进行模拟仿真计算由核反应引起的NIEL.实现了能量范围为300 eV—1 GeV的质子入射硅时NIEL的计算.计算结果表明,MCNPX/HTAPE3X可用于计算高能质子在材料中产生的反冲核所引起的NIEL,结合解析方法和TRIM程序可计算得到由于库仑相互作用引起的NIEL.     

Recoil distance methods and axial and transverse decoupling

The recoil distance method for measuring hyperfine interaction frequencies in highly stripped atoms is very briefly described in terms of a pictorial model. The limitations of this method for high-spin states are indicated. The effect of applying a large transverse magnetic field on the recoiling ions is investigated for Na-like⁴¹Ca(15/2⁺), and the behavior of the angular correlation of the decoupled atom is described in terms of the pictorial model.Work supported by the National Science Foundation.     

Atomic recoil effects in slow light propagation

We theoretically investigate the effect of atomic recoil on the propagation of ultraslow light pulses through a coherently driven Bose-Einstein condensed gas. For a sample at rest, the group velocity of the light pulse is the sum of the group velocity that one would observe in the absence of mechanical effects (infinite mass limit) and the velocity of the recoiling atoms (light-dragging effect). We predict that atomic recoil may give rise to a lower bound for the observable group velocities, as well as to pulse propagation at negative group velocities without appreciable absorption.     

Scattering and recoiling mapping of the Kr–Pt(1 1 1) system by SARIS

The technique of angle resolved mapping of scattering and recoiling imaging spectra (SARIS) combined with computer simulations is demonstrated to be a valuable tool for characterization of atomic collision events on surfaces. The energy distributions of scattered Kr and fast recoiled Pt atoms from a Pt(1 1 1) surface were measured as a function of exit angle. The use of a large area microchannel plate detector and time-of-flight techniques decreases the collection time and increases the number of detected trajectories above that of other designs. Classical ion trajectory simulations using the three-dimensional scattering and recoiling imaging code are used to simulate the kinematics of the scattering and recoiling particles. It is shown that SARIS mapping allows one to probe the kinematics of both scattered and recoiled particles, the probability for their occurrence in specific trajectories, their detection probabilities, and their threshold detection velocity. The measured and simulated energy distributions agree quantitatively if the detection efficiency is taken into account. The observed value of the threshold detection velocity for Pt atoms, ν^th=3.78(5)×10⁴ m/s, is in good agreement with previous studies.     

Site-specific recoil diffraction of backscattered electrons in crystals

A novel diffraction effect in high-energy electron backscattering is demonstrated: the formation of element-specific diffraction patterns via nuclear recoil. For sapphire (Al(2)O(3)), the difference in recoil energy allows us to determine if an electron scattered from aluminum or from oxygen. The angular electron distribution obtained in such measurements is a strong function of the recoiling lattice site. These element-specific recoil diffraction features are explained using the dynamical theory of electron diffraction. Our observations open up new possibilities for local, element-resolved crystallographic analysis using quasielastically backscattered electrons in scanning electron microscopy.     

Energy loss by keV ions in silicon

Using silicon photodiodes with an ultrathin passivation layer, the average total energy lost to silicon target electrons (electronic stopping) by incident low energy ions and the recoil target atoms they generate is directly measured. We find that the total electronic energy deposition and the ratio of the total nuclear to electronic stopping powers for the incident ions and their recoils each follow a simple, universal representation, thus enabling systematic prediction of ion-induced effects in silicon. We also observe a velocity threshold at 0.05 a.u. for the onset of electronic stopping.     

Contrast interferometry using Bose-Einstein condensates to measure h/m and alpha

The kinetic energy of an atom recoiling due to absorption of a photon was measured as a frequency, using an interferometric technique called "contrast interferometry." Optical standing wave pulses were used to create a symmetric three-path interferometer with a Bose-Einstein condensate. Its recoil phase, measurable with a single shot, varies quadratically with additional recoils and is insensitive to errors from vibrations and ac Stark shifts. We have measured the photon recoil frequency of sodium to 7 ppm precision, using a simple realization of this scheme. Plausible extensions should yield sufficient precision to attain a ppb-level determination of h/m and the fine structure constant alpha.     

Stopping of slow recoil atoms in gases

Nuclear Resonance Fluorescence spectra contain information on the slowing-down behaviour of recoiling atoms in the energy range pertinent to the specific reaction. On the basis of conventional transport theory, measured spectra for arsenic atoms with energies ?15 eV slowing down in helium are analysed. The assumption of continuous slowing down turns out to be well justified, and the thermal motion of the gas atoms is shown to influence the effective stopping power only slightly. Somewhat surprising in view of uncertainties concerning the charge state of the recoiling atoms, theoretical predictions based on Lenz-Jensen elastic interaction agree well with the measured spectra. At present, the experimental data do not allow direct inversion, but the calculated spectra are shown to depend sensitively on the stopping-power input.     

Elastic Energy Losses and Orientation Effects during Interaction between Atomic Particles

Patterns of energy transfer and accumulation in elastic interactions between Nb⁺ ions (E₀ = 0.1–3 keV) and atoms of a Nb single crystal are studied by means of molecular dynamics. Spatial distributions of the recoil energy in the bulk of the crystal are calculated. It is shown that recoil energy is accumulated in the region of the densest packing of atoms, mainly in the outermost (N = 1–3) monolayers of the crystal. The effect the orientation of the target with respect to the beam has on the recoil energy and its spatial distributions is determined.     

Point-defect properties of,and sputtering events in,the {001} surfaces of Ni3Al. II. Sputtering events at and near surfaces

Atomic recoil events at and near {001} surfaces of Ni₃Al due to elastic collisions between electrons and atoms have been simulated by molecular dynamics to obtain the sputtering threshold energy as a function of atomic species, recoil direction and atomic layer of the primary recoil atom. The minimum sputtering energy occurs for adatoms and is 3.5 and 4.5?eV for Al and Ni adatoms on the Ni–Al surface (denoted ‘M’), respectively, and 4.5?eV for both species on the pure Ni surface (denoted ‘N’). For atoms within the surface plane, the minimum sputtering energy is 6.0?eV for Al and Ni atoms in the M plane and for Ni atoms in the N surface. The sputtering threshold energy increases with increasing angle, θ, between the recoil direction and surface normal, and is almost independent of azimuthal angle, ?, if θ<60°; it varies strongly with ? when θ>60°, with a maximum at ??=?45° due to ?{110}? close-packed atomic chains in the surface. The sputtering threshold energy increases significantly for subsurface recoils, except for those that generate efficient energy transfer to a surface atom by a replacement collision sequence. The implications of the results for the prediction of the mass loss due to sputtering during microanalysis in a FEG STEM are discussed.     

Cooling of atoms below the recoil energy under multizone Raman excitation

Cooling of atoms below the temperature determined by the recoil energy is proposed on the basis of the Raman excitation of three-level atoms by the field of standing waves with a relative spatial shift. The advantage of this cooling mechanism is a weak sensitivity to the shape and duration of light pulses used for the transfer of population under Raman excitation. It is shown that the effectiveness of such cooling increases sharply when multizone excitation is used and already several interaction zones are enough for deep transverse cooling of an atomic beam to a temperature significantly lower than the recoil energy.     

Defects in semiconductors—results from Mössbauer spectroscopy

Progress in the development of Mössbauer techniques with ion-implanted, radioactive precursors to a Mössbauer isotope is discussed. Results obtained for elemental group IV semiconductors and their alloys as well as for III–V and II–VI compound semiconductors are presented. Emphasis is put on Mössbauer emission spectroscopy with radioactive probe atoms where the recoil energy in the nuclear decay is sufficient to expel the daughter atoms from a (substitutional) lattice site. The interactions of such (interstitial) atoms have been studied for ¹¹⁹Sb →¹¹⁹Sn in III–V compounds and for ⁵⁷Fe in silicon in particular. Finally, preliminary results, contributing to the question of the origin and nature of the magnetism in the Fe-doped, dilute magnetic semiconductor ZnO, are given.     

低能原子簇轰击金属薄膜引起的级联碰撞(Ⅰ)——高能反冲原子

用分子动力学模拟研究能量为1keV/atom的Au原子簇和0.2keV/atom的Al原子簇轰击金薄膜产生的级联碰撞。分子动力学模拟结果表明,原子簇轰击后,靶原子的反冲能谱加宽。与同样速度的单原子轰击比较,最大反冲能较后者高2—5倍。原子簇轰击后的多次碰撞及运动原子间的碰撞增加了靶原子的反冲能。还用经典力学守恒定律分析了两个碰撞的运动原子间的能量转移。 关键词：     

The slowing down of atoms with energies ofE<10 eV in crystals

The line shape of the 773 keV emission line emitted by¹⁸⁷Re depends on the slowing down of the recoil the atom receives in the precedingβ transition. Using the nuclear resonance fluorescence method the line profile was studied for sources where the radioactive atoms are embedded in single crystals of W and WSe₂ and in polycrystalline samples of Nb. The experimental results for W and Nb are in complete agreement with predictions by a theory in which the slowing down is calculated starting from a Born-v. Karman lattice model. The temperature dependence of the line shape yields the phonon lifetimes in W and Nb (W) to beτ(300 K)=(2.4±0.3)ps andτ(300 K)=(1.7±0.2) ps, respectively. Measurements for the slowing down of the recoiling atoms perpendicularly to and along the hexagonal axis of WSe₂ yielded an anisotropy in qualitative agreement with expected values.     

Physics and present status of the WITCH experiment

The WITCH experiment (Weak Interaction Trap for CHarged particles) is starting measurements at the ISOLDE facility at CERN at present. It has been set up to measure the energy spectrum of the recoiling daughter ions after nuclear beta decay for precision tests of the Standard Model of weak interactions. However, many other topics of interest are accessible. In this article, the possibilities of recoil spectroscopy with the WITCH experiment are discussed, as well as the principle of the setup and its present situation.