宽带隙Cu(In,Al)Se2薄膜的制备及表征

以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜, 通过真空蒸镀法在CIS薄膜上沉积Al膜, 经硒化退火后在氧化铟锡(ITO)基底上制备了Cu(InAl)Se2(CIAS)薄膜. 采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis)对其形貌、结构、成分及光学吸收性质进行了表征. 结果表明, 制备的CIAS薄膜颗粒均匀, 表面平整致密, 呈黄铜矿结构. 薄膜在可见光区具有良好的吸收, 带隙约为1.65 eV.     

Compositionally tunable Cu2ZnSn(S(1-x)Se(x))4 nanocrystals: probing the effect of Se-inclusion in mixed chalcogenide thin films

Nanocrystals of multicomponent chalcogenides, such as Cu(2)ZnSnS(4) (CZTS), are potential building blocks for low-cost thin-film photovoltaics (PVs). CZTS PV devices with modest efficiencies have been realized through postdeposition annealing at high temperatures in Se vapor. However, little is known about the precise role of Se in the CZTS system. We report the direct solution-phase synthesis and characterization of Cu(2)ZnSn(S(1-x)Se(x))(4) nanocrystals (0 ≤ x ≤ 1) with the aim of probing the role of Se incorporation into CZTS. Our results indicate that increasing the amount of Se increases the lattice parameters, slightly decreases the band gap, and most importantly increases the electrical conductivity of the nanocrystals without a need for annealing.     

Lanthanide clusters with internal Ln: fragmentation and the formation of dimers with bridging Se(2-) and Se2(2-) ligands

Reactions of "LnI(x)(SePh)(3-x)" (Ln = Dy, Ho) with elemental S/Se give (THF)14Ln10S6(Se2)6I6. The compounds are composed of a Ln6S6 double cubane core, with two twisted "Ln2(SeSe)3" units condensed onto opposing rectangular sides of the Ln6S6 fragment. This deposition of Ln2Se6 totally encapsulates the two central Ln's with chalcogen atoms (four S and four Se atoms), excluding neutral THF donors or iodides from the two primary coordination spheres. Reactions of Ln(10) clusters with a stronger Lewis base result in fragmentation and, in the case of Ln = Er, the isolation of (py)6Er2(Se2)(S0.8Se0.2)I2, with two Ln(III) ions spanned by E2- and (EE)2- ligands. The related homochalcogen dimers (py)6Ln2(Se2)(Se)Br2 (Ln = Ho, Yb) were prepared to establish that such molecules could be prepared rationally, and to confirm the isolability of E2- ligands coordinated to only two sterically unconstrained Ln ions.     

Crystal structure and physical properties of the new chalcogenides Ba3Cu(17-x)(S,Te)11 and Ba3Cu(17-x)(S,Te)11.5 with two different Cu clusters

The sulfide-tellurides Ba(3)Cu(17-x)(S,Te)(11) and Ba(3)Cu(17-x)(S,Te)(11.5) were synthesized from the elements in stoichiometric ratios heated to 1073 K, followed by slow cooling to 873 K over 100 h. Ba(3)Cu(17-x)(S,Te)(11) is isostructural to Ba(3)Cu(17-x)(Se,Te)(11) when [S] > [Te], space group R ?3m, with lattice dimensions of a = 12.009(1) ?, c = 27.764(2) ?, V = 3467.6(5) ?(3), for Ba(3)Cu(15.7(4))S(7.051(5))Te(3.949) (Z = 6). The structure is composed of Cu atoms forming paired hexagonal antiprisms, capped on the two outer hexagonal faces, where each Cu atom is tetrahedrally coordinated by four Q (= S, Te) atoms. The new variant is formed when [Te] > [S]; then Ba(3)Cu(17-x)(S,Te)(11.5) adopts space group Fm3?m with a = 17.2095(8) ?, V = 5096.9(4) ?(3), for Ba(3)Cu(15.6(2))S(5.33(4))Te(6.17) (Z = 8). This structure consists of eight Te-centered Cu(16) icosioctahedra per cell interconnected by cubic Cu(8) units centered by Q atoms. Electronic structure calculations and property measurements illustrate that these compounds behave as extrinsic p-type semiconductors-toward metallic behavior for the latter compound. With standard oxidation states Ba(2+), Cu(+), and Q(2-), the electron precise formulas are Ba(3)Cu(16)Q(11) and Ba(3)Cu(17)Q(11.5).     

Pyridineselenolate Complexes of Copper and Indium: Precursors to CuSe(x)() and In(2)Se(3)

The pyridineselenolate (2-Se-NC(5)H(4), (SePy)) and the 3-(trimethylsilyl)pyridineselenolate (3-Me(3)Si-2-Se-NC(5)H(4) (SePy)) ligands form air-stable homoleptic coordination compounds of Cu(I) { [Cu(SePy)](4) (1) and [Cu(SePy)](4) (2)} and In(III) {In(SePy)(3) (3) and In(SePy)(3) (4)}. Mass spectroscopic characterization of the Cu(I) compounds indicated a tetrametallic core, and this was confirmed with a single-crystal X-ray structural characterization of crystalline 1 and 2, which both contain a tetrametallic cluster of Cu(I) ions bound to two doubly bridging Se atoms and a pyridine nitrogen. The Cu coordination sphere is completed with two strong Cu-Cu bonds and one weaker Cu-Cu interaction. The indium compounds 3 and 4 are each distorted fac-octahedral molecules with chelating SePy ligands. These compounds are useful low-temperature precursors to the binary selenides. Both 3 and 4 sublime intact; 3 thermally decomposes to give In(2)Se(3). The Cu clusters do not sublime intact but still decompose to give metal selenide phases: 2 decomposes to give pure alpha-CuSe at low temperatures and increasing amounts of Cu(2)(-)(x)()Se at elevated temperatures, while 3 decomposes to give a mixture of CuSe phases at all temperatures. Crystal data (Mo Kalpha: 1, 153(5) K; 2-4, 293(2) K) are as follows: 1, monoclinic space group C2/c, a = 20.643(5) ?, b = 16.967(2) ?, c = 16.025(2) ?, beta = 114.16(2) degrees, Z = 8; 2, tetragonal space group I4(1)/a, a = 14.756(3) ?, c = 19.925(3) ?, Z = 4; 3, trigonal space group P&thremacr;c1, a = 13.352(2) ?, c = 13.526(2) ?, Z = 4; 4, monoclinic space group P2(1)/c, a = 9.793(1) ?, b = 20.828(6) ?, c = 16.505(1) ?, beta = 96.69(1) degrees, Z = 4.     

Alloyed (ZnSe)(x)(CuInSe2)(1-x) and CuInSe(x)S(2-x) nanocrystals with a monophase zinc blende structure over the entire composition range

Metastable zinc blende CuInSe(2) nanocrystals were synthesized by a hot-injection approach. It was found that the lattice mismatches between zinc blende CuInSe(2) and ZnSe as well as CuInSe(2) and CuInS(2) are only 2.0% and 4.6%, respectively. Thus, alloyed (ZnSe)(x)(CuInSe(2))(1-x) and CuInSe(x)S(2-x) nanocrystals with a zinc blende structure have been successfully synthesized over the entire composition range, and the band gaps of alloys can be tuned in the range from 2.82 to 0.96 eV and 1.43 to 0.98 eV, respectively. These alloyed (ZnSe)(x)(CuInSe(2))(1-x) and CuInSe(x)S(2-x) nanocrystals with a broad tunable band gap have a high potential for photovoltaic and photocatalytic applications.     

Bandgap engineering of monodispersed Cu(2-x)S(y)Se(1-y) nanocrystals through chalcogen ratio and crystal structure

Bandgap engineering is important in light-absorption optimization of nanocrystals (NCs) for applications such as highly efficient solar cells. Herein, a facile one-pot method is developed to synthesize monodispersed ternary alloyed copper sulfide selenide (Cu(2-x)S(y)Se(1-y)) NCs with tunable composition, structure, and morphology. The energy bandgaps can be tuned with the chalcogen ratio, and the crystal structure of the NCs is found to produce an effect on their bandgap and light absorption. The results are significant in bandgap engineering of semiconductor NCs.     

Design of energy band alignment at the Zn(1-x)Mg(x)O/Cu(In,Ga)Se2 interface for Cd-free Cu(In,Ga)Se2 solar cells

The electronic band structure at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface was investigated for its potential application in Cd-free Cu(In,Ga)Se(2) thin film solar cells. Zn(1-x)Mg(x)O thin films with various Mg contents were grown by atomic layer deposition on Cu(In(0.7)Ga(0.3))Se(2) absorbers, which were deposited by the co-evaporation of Cu, In, Ga, and Se elemental sources. The electron emissions from the valence band and core levels were measured by a depth profile technique using X-ray and ultraviolet photoelectron spectroscopy. The valence band maximum positions are around 3.17 eV for both Zn(0.9)Mg(0.1)O and Zn(0.8)Mg(0.2)O films, while the valence band maximum value for CIGS is 0.48 eV. As a result, the valence band offset value between the bulk Zn(1-x)Mg(x)O (x = 0.1 and x = 0.2) region and the bulk CIGS region was 2.69 eV. The valence band offset value at the Zn(1-x)Mg(x)O/CIGS interface was found to be 2.55 eV after considering a small band bending in the interface region. The bandgap energy of Zn(1-x)Mg(x)O films increased from 3.25 to 3.76 eV as the Mg content increased from 0% to 25%. The combination of the valence band offset values and the bandgap energy of Zn(1-x)Mg(x)O films results in the flat (0 eV) and cliff (-0.23 eV) conduction band alignments at the Zn(0.8)Mg(0.2)O/Cu(In(0.7)Ga(0.3))Se(2) and Zn(0.9)Mg(0.1)O/Cu(In(0.7)Ga(0.3))Se(2) interfaces, respectively. The experimental results suggest that the bandgap energy of Zn(1-x)Mg(x)O films is the main factor that determines the conduction band offset at the Zn(1-x)Mg(x)O/Cu(In(0.7)Ga(0.3))Se(2) interface. Based on these results, we conclude that a Zn(1-x)Mg(x)O film with a relatively high bandgap energy is necessary to create a suitable conduction band offset at the Zn(1-x)Mg(x)O/CIGS interface to obtain a robust heterojunction. Also, ALD Zn(1-x)Mg(x)O films can be considered as a promising alternative buffer material to replace the toxic CdS for environmental safety.     

一步法电化学沉积Cu(In1-x,Gax)Se2薄膜的特性

在CuCl2、InCl3、GaCl3及H2SeO3组成的酸性水溶液电沉积体系中, 对Mo/玻璃衬底上一步法电沉积Cu(In1-x, Gax)Se2(简写为CIGS)薄膜进行了研究. 为了稳定溶液的化学性质, 在溶液中加入邻苯二甲酸氢钾和氨基磺酸作为pH缓冲剂, 将溶液的pH值控制在约2.5, 并提高薄膜中Ga的含量. 通过大量实验优化了溶液组成及电沉积条件, 得到接近化学计量比贫Cu 的CIGS薄膜(当Cu与In+Ga的摩尔比为1时, 称为符合化学计量比的CIGS薄膜; 当其比值为0.8-1时, 称为贫Cu或富In的CIGS 薄膜)预置层, 薄膜表面光亮、致密、无裂纹. 利用循环伏安法初步研究了一步法电沉积CIGS薄膜的反应机理, 在沉积过程中, Se4+离子先还原生成单质Se, 再诱导Cu2+、Ga3+和In3+发生共沉积. 电沉积CIGS薄膜预置层在固态硒源280 ℃蒸发的硒气氛中进行硒化再结晶, 有效改善了薄膜的结晶结构, 且成份基本不发生变化,但是表面会产生大量的裂纹.     

New barium copper chalcogenides synthesized using two different chalcogen atoms: Ba2Cu(6-x)STe4 and Ba2Cu(6-x)Se(y)Te(5-y)

Ba(2)Cu(6-x)STe(4) and Ba(2)Cu(6-x)Se(y)Te(5-y) were prepared from the elements in stoichiometric ratios at 1123 K, followed by slow cooling. These chalcogenides are isostructural, adopting the space group Pbam (Z = 2), with lattice dimensions of a = 9.6560(6) ?, b = 14.0533(9) ?, c = 4.3524(3) ?, and V = 590.61(7) ?(3) in the case of Ba(2)Cu(5.53(3))STe(4). A significant phase width was observed in the case of Ba(2)Cu(6-x)Se(y)Te(5-y) with at least 0.17(3) ≤ x ≤ 0.57(4) and 0.48(1) ≤ y ≤ 1.92(4). The presence of either S or Se in addition to Te appears to be required for the formation of these materials. In the structure of Ba(2)Cu(6-x)STe(4), Cu-Te chains running along the c axis are interconnected via bridging S atoms to infinite layers parallel to the a,c plane. These layers alternate with the Ba atoms along the b axis. All Cu sites exhibit deficiencies of up to 26%. Depending on y in Ba(2)Cu(6-x)Se(y)Te(5-y), the bridging atom is either a Se atom or a Se/Te mixture when y ≤ 1, and the Te atoms of the Cu-Te chains are partially replaced by Se when y > 1. All atoms are in their most common oxidation states: Ba(2+), Cu(+), S(2-), Se(2-), and Te(2-). Without Cu deficiencies, these chalcogenides were computed to be small gap semiconductors; the Cu deficiencies lead to p-doped semiconducting properties, as experimentally observed on selected samples.     

Straightforward route to the adamantane clusters [Sn4Q10]4- (Q = S, Se, Te) and use in the assembly of open-framework chalcogenides (Me4N)2M[Sn4Se10] (M = Mn(II), Fe(II), Co(II), Zn(II)) including the first telluride member (Me4N)2Mn[Ge4Te10

The reaction of K(2)Sn(2)Q(5) (Q = S, Se, Te) with stoichiometric amounts of alkyl-ammonium bromides R(4)NBr (R = methyl or ethyl) in ethylenediamine (en) afforded the corresponding salts (R(4)N)(4)[Sn(4)Q(10)] (Q = S, Se, Te) in high yield. Although the compound K(2)Sn(2)Te(5) is not known, this reaction is also applicable to solids with a nominal composition "K(2)Sn(2)Te(5)" which in the presence of R(4)NBr in en are quantitatively converted to the salts (R(4)N)(4)[Sn(4)Te(10)] on a multigram scale. These salts contain the molecular adamantane clusters [Sn(4)Q(10)](4-) and can serve as soluble precursors in simple metathesis reactions with transition metal salts to synthesize the large family of open-framework compounds (Me(4)N)(2)M[Sn(4)Se(10)] (M = Mn(2+), Fe(2+), Co(2+), Zn(2+)). Full structural characterization of these materials as well as their magnetic and optical properties is reported. Depending on the transition metal in (Me(4)N)(2)M[Sn(4)Se(10)], the energy band gaps of these compounds lie in the range of 1.27-2.23 eV. (Me(4)N)(2)Mn[Ge(4)Te(10)] is the first telluride analogue to be reported in this family. This material is a narrow band gap semiconductor with an optical absorption energy of 0.69 eV. Ab initio electronic band structure calculations validate the semiconductor nature of these chalcogenides and indicate a nearly direct band gap.     

Electrodeposition of CuInSe2 (CIS) via electrochemical atomic layer deposition (E-ALD)

The growth of stoichiometric CuInSe(2) (CIS) on Au substrates using electrochemical atomic layer deposition (E-ALD) is reported here. Parameters for a ternary E-ALD cycle were investigated and included potentials, step sequence, solution compositions and timing. CIS was also grown by combining cycles for two binary compounds, InSe and Cu(2)Se, using a superlattice sequence. The formation, composition, and crystal structure of each are discussed. Stoichiometric CIS samples were formed using the superlattice sequence by performing 25 periods, each consisting of 3 cycles of InSe and 1 cycle of Cu(2)Se. The deposits were grown using 0.14, -0.7, and -0.65 V for Cu, In, and Se precursor solutions, respectively. XRD patterns displayed peaks consistent with the chalcopyrite phase of CIS, for the as-deposited samples, with the (112) reflection as the most prominent. AFM images of deposits suggested conformal deposition, when compared with corresponding image of the Au on glass substrate.     

Luminescent homo- and heteropolynuclear platinum(II) chalcogenido aggregates based on [Pt2E2(P empty set N)4] units (E=S,Se)

A series of homodinuclear platinum(II) complexes containing bridging chalcogenido ligands, [Pt(2)(mu-E)(2)(P empty set N)(4)] (P empty set N=dppy, E=S (1), Se (2); P empty set N=tBu-dppy, E=S (3)) (dppy=2-(diphenylphosphino)pyridine, tBu-dppy=4-tert-butyl-2-(diphenylphosphino)pyridine) have been synthesized and characterized. The nucleophilicity of the [Pt(2)E(2)] unit towards a number of d(10) metal ions and complexes has been demonstrated through the successful isolation of a number of novel heteropolynuclear platinum(II)-copper(I), -silver(I), and -gold(I) complexes: [[Pt(2)(mu(3)-E)(2)(dppy)(4)](2)Ag(3)](PF(6))(3) (E=S (4); Se (5)) and [Pt(2)(dppy)(4)(mu(3)-E)(2)M(2)(dppm)]X(2) (E=S, M=Ag, X=BF(4) (6); E=S, M=Cu, X=PF(6) (7); E=S, M=Au, X=PF(6) (8); E=Se, M=Ag, X=PF(6) (9); E=Se, M=Au, X=PF(6) (10)). Some of them display short metal.metal contacts. These complexes have been found to possess interesting luminescence properties. Through systematic comparison studies, the emission origin has been probed.     

Metal-free inorganic ligands for colloidal nanocrystals: S2-, HS-, Se2-, HSe-, Te2-, HTe-, TeS3(2-), OH-, and NH2- as surface ligands

All-inorganic colloidal nanocrystals were synthesized by replacing organic capping ligands on chemically synthesized nanocrystals with metal-free inorganic ions such as S(2-), HS(-), Se(2-), HSe(-), Te(2-), HTe(-), TeS(3)(2-), OH(-) and NH(2)(-). These simple ligands adhered to the NC surface and provided colloidal stability in polar solvents. The versatility of such ligand exchange has been demonstrated for various semiconductor and metal nanocrystals of different size and shape. We showed that the key aspects of Pearson's hard and soft acids and bases (HSAB) principle, originally developed for metal coordination compounds, can be applied to the bonding of molecular species to the nanocrystal surface. The use of small inorganic ligands instead of traditional ligands with long hydrocarbon tails facilitated the charge transport between individual nanocrystals and opened up interesting opportunities for device integration of colloidal nanostructures.     

Structure and thermoelectric properties of the new quaternary bismuth selenides A(1-x)M(4-x)Bi(11+x)Se21 (A = K and Rb and Cs; M = Sn and Pb)--members of the grand homologous series Km(M6Se8)m(M(5+n)Se(9+n))

Several members of the new family A(1-x)M(4-x)Bi(11+x)Se21 (A = K, Rb, Cs; M = Sn, Pb) were prepared by direct combination of A2Se, Bi2Se3, Sn (or Pb), and Se at 800 degrees C. The single-crystal structures of K(0.54)Sn(3.54)Bi(11.46)Se21, K(1.46)Pb(3.08)Bi(11.46)Se21, Rb(0.69)Pb(3.69)Bi(11.31)Se21, and Cs(0.65)Pb(3.65)Bi(11.35)Se21 were determined. The compounds A(1-x)M(4-x)Bi(11+x) Se21 crystallize in a new structure type with the monoclinic space group C2/m, in which building units of the Bi2Te3 and NaCl structure type join to give rise to a novel kind of three-dimensional anionic framework with alkali-ion-filled tunnels. The building units are assembled from distorted, edge-sharing (Bi,Sn)Se6 octahedra. Bi and Sn/Pb atoms are disordered over the metal sites of the chalcogenide network, while the alkali site is not fully occupied. A grand homologous series Km(M6Se8)m(M(5+n)Se(9+n)) has been identified of which the compounds A(1-x)M(4-x)Bi(11+x)Se21 are members. We discuss here the crystal structure, charge-transport properties, and very low thermal conductivity of A(1-x)M(4-x)Bi(11+x)Se21.     

Chemical Manipulation of Magnetic Ordering in Mn(1-x)Sn(x)Bi(2)Se(4) Solid-Solutions

Several compositions of manganese-tin-bismuth selenide solid-solution series, Mn(1-x)Sn(x)Bi(2)Se(4) (x = 0, 0.3, 0.75), were synthesized by combining high purity elements in the desired ratio at moderate temperatures. X-ray single crystal studies of a Mn-rich composition (x = 0) and a Mn-poor phase (x = 0.75) at 100 and 300 K revealed that the compounds crystallize isostructurally in the monoclinic space group C2/m (no.12) and adopt the MnSb(2)Se(4) structure type. Direct current (DC) magnetic susceptibility measurements in the temperature range from 2 to 300 K indicated that the dominant magnetic ordering within the Mn(1-x)Sn(x)Bi(2)Se(4) solid-solutions below 50 K switches from antiferromagnetic (AFM) for MnBi(2)Se(4) (x = 0), to ferromagnetic (FM) for Mn(0.7)Sn(0.3)Bi(2)Se(4) (x = 0.3), and finally to paramagnetic (PM) for Mn(0.25)Sn(0.75)Bi(2)Se(4) (x = 0.75). We show that this striking variation in the nature of magnetic ordering within the Mn(1-x)Sn(x)Bi(2)Se(4) solid-solution series can be rationalized by taking into account: (1) changes in the distribution of magnetic centers within the structure arising from the Mn to Sn substitutions, (2) the contributions of spin-polarized free charge carriers resulting from the intermixing of Mn and Sn within the same crystallographic site, and (3) a possible long-range ordering of Mn and Sn atoms within individual {M}(n)Se(4n+2) single chain leading to quasi isolated {MnSe(6)} octahedra spaced by nonmagnetic {SnSe(6)} octahedra.     

Effect of metal ions on photoluminescence, charge transport, magnetic and catalytic properties of all-inorganic colloidal nanocrystals and nanocrystal solids

Colloidal semiconductor nanocrystals (NCs) provide convenient "building blocks" for solution-processed solar cells, light-emitting devices, photocatalytic systems, etc. The use of inorganic ligands for colloidal NCs dramatically improved inter-NC charge transport, enabling fast progress in NC-based devices. Typical inorganic ligands (e.g., Sn(2)S(6)(4-), S(2-)) are represented by negatively charged ions that bind covalently to electrophilic metal surface sites. The binding of inorganic charged species to the NC surface provides electrostatic stabilization of NC colloids in polar solvents without introducing insulating barriers between NCs. In this work we show that cationic species needed for electrostatic balance of NC surface charges can also be employed for engineering almost every property of all-inorganic NCs and NC solids, including photoluminescence efficiency, electron mobility, doping, magnetic susceptibility, and electrocatalytic performance. We used a suite of experimental techniques to elucidate the impact of various metal ions on the characteristics of all-inorganic NCs and developed strategies for engineering and optimizing NC-based materials.     

Effects of lanthanide metal size and amino ligand denticity on the solvothermal systems Ln/Sn/Se/en and Ln/Sn/Se/dien (Ln = lanthanide)

Two systems, Ln/Sn/Se/en and Ln/Sn/Se/dien, were investigated under solvothermal conditions, and novel lanthanide selenidostannates [{Ce(en)(4)}(2)(μ-Se(2))]Sn(2)Se(6) (1a), [{Ln(en)(3)}(2)(μ-OH)(2)]Sn(2)Se(6) (Ln = Pr(1b), Nd(1c), Gd(1d); en = ethylenediamine), [{Ln(dien)(2)}(4)(μ(4)-Sn(2)Se(9))(μ-Sn(2)Se(6))](∞) (Ln = Ce(2a), Nd(2b)), and [Hdien][Gd(dien)(2)(μ-SnSe(4))] (2c) (dien = diethylenetriamine) were prepared and characterized. Two structural types of lanthanide selenidostannates were obtained across the lanthanide series in both systems. In the Ln/Sn/Se/en system, two types of binuclear lanthanide complex cations [Ce(2)(en)(8)(μ-Se(2))](4+) and [{Ln(en)(3)}(2)(μ-OH)(2)](4+) (Ln = Pr, Nd, Gd) were formed depending on the Ln(3+) ions. The complex cations are compensated by the [Sn(2)Se(6)](4-) anions. In the Ln/Sn/Se/dien system, coordination polymer [{Ln(dien)(2)}(4)(μ(4)-Sn(2)Se(9))(μ-Sn(2)Se(6))](∞) and ionic complex [Hdien][Gd(dien)(2)(μ-SnSe(4))] are obtained along the lanthanide series, among which the μ(4)-Sn(2)Se(9), μ-Sn(2)Se(6) and μ-SnSe(4) ligands to the Ln(3+) ions were observed. The formation of title complexes shows the effects of lanthanide metal size and amino ligand denticity on the lanthanide selenidostannates. Complexes 1a-2c exhibit semiconducting properties with band gaps between 2.08 and 2.48 eV.     

Crystal structures of Sr4Sn2Se9 and Sr4Sn2Se10 and the oxidation state of tin in an unusual geometry

The new ternary selenostannates Sr(4)Sn(2)Se(9) and Sr(4)Sn(2)Se(10) have been synthesized by heating the elements at 1023 K in an argon atmosphere. Their structures were determined by single-crystal X-ray methods. Sr(4)Sn(2)Se(9) crystallizes in a new structure type (Pbam, a = 12.042(2) A, b = 16.252(3) A, c = 8.686(2) A, Z = 4) with Sn(2)Se(6)(4-), SnSe(4)(4-), and Se(2)(2-) subunits. Sr(4)Sn(2)Se(10) (P2(1)2(1)2, a = 12.028(2) A, b = 16.541(3) A, c = 8.611(2) A, Z = 4) has a similar structure with Se(3)(2-) triangles instead of Se(2)(2-) dumbbells. Strontium is 8-fold-coordinated by selenium in both cases. The opening angles between tin and the terminal selenium atoms in the Sn(2)Se(6) subunits are close to 160 degrees , which is nearer a typical Sn(2+) coordination geometry than classical SnSe(4) tetrahedra. This result suggests the tin oxidation state in the Sn(2)Se(6) units to be lower than the expected Sn(4+). This question is examined by self-consistent LMTO and LAPW band structure calculations expanded by the Bader analysis of the charge density to assign reliable atomic charges.     

Syntheses of the 47 electron clusters [(Cp*Fe)3(mu3-X)2] (X = S, Se) and the First Fe/Sn/Se Heterocubane Cluster [(CpFe)3(SnCl3)(mu3-Se)4] x DME by the use of chalcogenostannate salts

By reacting 1-aminoethylammonium (H2NCH2CH2NH3+ = enH+) salts of [Sn2E6]4- anions (E = S, Se), [enH]4[Sn2S6] (1) and [enH]4[Sn2Se6] x en (2), with FeCl2/LiCp, three novel (partly) oxidized, Cp* ligated iron chalcogenide clusters were synthesized. Two of them, [(CpFe)3(mu3-S)2] (3) and [(Cp*Fe)3(mu3-Se)2] (4), contain formally 47 valence electrons. [(Cp*Fe)3(SnCl3)(mu3-Se)4] x DME (5) represents the first known mixed metal Fe/Sn/Se heterocubane type cluster. Compounds 3-5 were structurally characterized by single-crystal X-ray diffraction, and the odd valence electron number of the [Fe3E2] clusters (E = S, Se) was confirmed by density functional (DFT) investigations, mass spectrometry, cyclic voltammetry and a susceptibility measurement of 3.