Electrical and thermoelectric properties of the SiC/Si biomorphic composite at high temperatures

The electrical resistivity ρ and the thermopower coefficient α of a SiC/Si biomorphic composite fabricated from a porous carbon matrix [prepared through pyrolysis of wood (white eucalyptus)] by infiltrating molten Si into the empty channels of the matrix were measured in the temperature ranges 100–950 and 100–750 K, respectively. Silicon reacts chemically with the carbon of the matrix to produce 3C-SiC, which, in combination with the excess Si unreacted with carbon, forms the SiC/Si biomorphic composite. The SiC/Si samples studied had a concentration of “excess” Si of ～30 vol % and a porosity of ～13–15 vol %. Measurements of ρ were carried out on samples cut either along (ρ_∥) or across (ρ_⊥) the tree growth direction, and α was measured on a sample cut along the tree growth direction.     

Linear expansion coefficient of the SiC/Si biomorphic composite

In the temperature range 100–650 K, the linear expansion coefficient β was measured for the SiC/Si biomorphic composite, a new cellular ecoceramic fabricated from a porous cellular carbon matrix prepared through pyrolysis of wood (white eucalyptus) in an argon ambient with subsequent infiltration of molten Si into the channels of the matrix and the formation of 3C-SiC. The SiC/Si samples studied had an “excess” ～30% volume concentration of Si and a porosity of ～13–15%. The measurements were conducted on samples cut along (β_∥) and across (β_⊥) the tree growth direction. The measured values of β(T) of SiC/Si are compared with literature data available for the linear expansion coefficients of Si and 3C-SiC.     

Anisotropy of the thermal conductivity and electrical resistivity of the SiC/Si biomorphic composite based on a white-eucalyptus biocarbon template

The thermal conductivity κ and electrical resistivity ρ of a cellular ecoceramic, namely, the SiC/Si biomorphic composite, are measured in the temperature range 5–300 K. The SiC/Si biomorphic composite is fabricated using a cellular biocarbon template prepared from white eucalyptus wood by pyrolysis in an argon atmosphere with subsequent infiltration of molten silicon into empty through cellular channels of the template. The temperature dependences κ(T) and ρ(T) of the 3C-SiC/Si biomorphic composite at a silicon content of ～30 vol % are measured for samples cut out parallel and perpendicular to the direction of tree growth. Data on the anisotropy of the thermal conductivity κ are presented. The behavior of the dependences κ(T) and ρ(T) of the SiC/Si biomorphic composite at different silicon contents is discussed in terms of the results obtained and data available in the literature.     

Crystallization of amorphous SiC and superhardness effect in TiN/SiC nanomultilayers

TiN/SiC nanomultilayers with various constituent layer thicknesses were prepared by magnetron sputtering using TiN and SiC ceramic targets. X-ray diffractometer, scanning electron microscope, energy dispersive spectrometer, high-resolution transmission electron microscope, atomic force microscope and nanoindenter were employed to study the growth, microstructure and mechanical properties of these films. Experimental results revealed that amorphous SiC, which is more favorable under normal sputtering conditions, was forced to crystallize and grew epitaxially with TiN layers at thicknesses of less than 0.8 nm. The resultant films were found to form strong columnar structures, accompanied with a remarkable hardness increment. Maximal nanoindentation hardness as high as 60.6 GPa was achieved when SiC thickness was ∼0.6 nm. A further increase of SiC thickness caused the formation of amorphous SiC, which blocked the epitaxial growth of the multilayers, resulting in the decline of film's hardness. Additionally, investigations on multilayers different in TiN layer thicknesses showed that they are insensitive in both microstructure and hardness to the fluctuation of TiN layer thickness. The formation of epitaxially grown structure between crystalline SiC and TiN layers was found to be responsible for the obtained superhardness in multilayers.     

碳化硅的多型性

本文利用鉴定碳化硅多型体的“点间关系法”分析了一千一百多个碳化硅单晶体的劳埃照片。发现了61种碳化硅新多型体,其中六方晶胞c轴点阵常数最大的多型体1041R的点阵常数达2622.8?。至此碳化硅多型体的数目达110种,其中六方多型体30种,三方多型体80种。利用实验资料对现有的三种碳化硅多型体形成机理作了讨论,即1.螺型位错理论;2.生长环境因素理论和3.热力学理论。     

Growth Kinetics of Silicon Carbide Film Prepared by HeatingPolystyrene/Si(111)

在不同的温度下热处理用sol-gel法制的PS/Si(111)叠层凝胶膜制备出了SiC薄膜．用XRD、SEM、XPS、FTIR等分析方法研究了SiC薄膜的结构、组成和表面形貌等．根据FTIR光谱计算了不同温度下得到的SiC薄膜的厚度,并研究了PS/Si(111)热解法生长SiC薄膜的生长动力学．结果表明,随着生长温度的增加,SiC薄膜生长速率变化趋势为：1200～1250 oC生长速率增加缓慢是2D生长机制,1250～1270 oC生长速率快速增加是3D生长机制,1270～1300 oC生长速率为负增长是由于SiC薄膜生长与Si和C原子的挥发共同作用所致．由速率变化求得各段表观生长激活能分别是122.5、522.5、-127.5 J/mol．     

Heat capacity and velocity of sound in the SiC/Si biomorphic composite

The specific heat at constant pressure and the velocity of sound in the SiC/Si biomorphic composite prepared from white eucalyptus wood are measured in the range 3.5–65 K and at 77 K, respectively. The heat capacity of the SiC/Si sample under investigation is calculated within three proposed models according to the Kopp-Neumann additivity rule.     

Misfit dislocation locking and rotation during gallium nitride growth on SiC/Si substrates

The effect of changing the misfit dislocation propagation direction during GaN layer growth on the AlN/SiC/Si(111) structure surface is detected. The effect is as follows. As the GaN layer growing on AlN/SiC/Si(111) reaches a certain thickness of ~300 nm, misfit dislocations initially along the layer growth axis stop and begin to move in the direction perpendicular to the growth axis. A theoretical model of AlN and GaN nucleation on the (111) SiC/Si face, explaining the effect of changing the misfit dislocation motion direction, is constructed. The effect of changing the nucleation mechanism from the island one for AlN on SiC/Si(111) to the layer one for the GaN layer on AlN/SiC/Si is experimentally detected and theoretically explained.     

Thermopower of Bio-SiC and SiC/Si ecoceramics prepared from sapele tree wood

The thermopower coefficients of bio-SiC and SiC/Si ecoceramics prepared from sapele tree wood have been measured in the temperature interval 5–300 K. The measurements have been performed both along and perpendicular to empty (bio-SiC), as well as empty and partially silicon-filled (SiC/Si) channels in the samples. In bio-SiC, a contribution to thermopower associated with electron drag by phonons has been shown to exist within the temperature interval 5–200 (250) K. No such effect is realized in SiC/Si. This is assumed to derive from the presence in this material of heavily doped silicon embedded in SiC channels and the dominant part it plays in the behavior of the thermopower of this ceramics. The results obtained for the thermopower are compared with the available data for bio-SiC prepared from white eucalyptus tree wood and heavily doped bismuth.     

基于静电纺丝工艺的LED远程荧光片制备技术

首次提出了一种基于静电纺丝工艺以柔性PET为基底的新型LED远程荧光片的制备方法,实现了蓝色LED芯片与荧光粉层相分离的免封装器件结构。采用静电纺丝工艺制备了黄色荧光片和红色荧光片,并研究了黄色荧光片的透射率、吸收率、PL谱及红色荧光片对白光LED的光学性能参数的影响,包括光通量、相关色温、光效。实验结果表明,所制备黄色荧光片在可见光波段具有良好的透光性,荧光片的光谱完全由荧光粉来决定,不需要考虑复杂工艺的影响;使用红色荧光片可以在保持高光效的同时将球泡灯的相关色温由5 595 K降低为3 214 K,这在曲面发光及色温调节方面为灯具设计提供了广阔的空间。     

TiN/SiC纳米多层膜的生长结构与力学性能

研究了TiN/SiC纳米多层膜中立方SiC（B1cubic SiC）的形成及其对TiN/SiC多层膜力学性能的影响.结果表明：在TiN/SiC多层膜中，非晶态的SiC层在厚度小于0.6nm时形成立方结构并与TiN形成共格外延生长的超晶格柱状晶，使多层膜产生硬度和弹性模量显著升高的超硬效应，最高硬度超过60GPa.SiC随着层厚的增加转变为非晶相，从而阻止了多层膜的共格外延生长，使薄膜呈现TiN纳米晶和SiC非晶组成的层状结构特征，同时多层膜的硬度和弹性模量下降.TiN/SiC纳米多层膜产生的超硬效应与立方 关键词： 立方碳化硅 TiN/SiC纳米多层膜 外延生长 超硬效应     

白光LED封装材料对其光衰影响的实验研究

为了确定不同封装材料对白光LED光衰等性能指标影响的程度,进行了不同材料支架、不同种类固晶胶,以及不同厂家荧光粉及配粉胶的对比试验。试验发现,使用铜支架比铁支架LED的光效高,在第8周时光衰比铁支架低10％;使用银浆固晶比用环氧树脂寿命长,但初始光通比环氧树脂低近1／3;不同厂家的荧光粉对白光LED光衰的影响程度不同;使用环氧树脂作为配粉胶比用硅胶寿命短,但初始光通量相对高出25％。分析认为,主要是由于不同固晶胶和支架使PN结至支架之间的热阻发生了变化,不同配粉胶在LED封装过程中烘烤温度不一样,以及荧光粉本身具有光衰特性导致了白光LED产生不同程度的光衰。因此,在进行白光LED的封装设计、制造过程中,应根据用户对初始光通量、光衰以及色温漂移等参量的重视程度综合考虑并选择相应的封装材料．     

Electrical properties of bio-SiC and Si components of the SiC/Si biomorphic composite

The electrical resistivity ρ of bio-SiC, a highly porous cellular material prepared from a biomorphic composite SiC/Si based on white eucalyptus wood through the chemical removal of silicon, was measured in the temperature range 5–100 K. The electrical resistivity of bio-SiC was found to be anisotropic along and across the cellular pores. The activation energy of charge transfer in bio-SiC was estimated. The measured values of ρ for the SiC/Si biomorphic composite and bio-SiC were used to determine the electrical resistivity ρ and the carrier concentration in silicon, which is one of the constituents of the composite.     

Thermal conductivity of the SiC/Si biomorphic composite, a new cellular ecoceramic

The thermal conductivity κ and electrical resistivity ρ of a SiC/Si biomorphic composite were measured at temperatures T = 5–300 K. The composite is a cellular ecoceramic fabricated by infiltrating molten Si into the channels of a cellular carbon matrix prepared via pyrolysis of wood (white eucalyptus) in an argon ambient. The κ(T) and ρ(T) relations were measured on a sample cut along the direction of tree growth. The experimental results obtained are analyzed.     

A first-principles study of the size-dependent electronic properties of SiC nanotubes

We investigate the structural and electronic properties of SiC nanotubes(NTs) with hexagonal cross sections by a first-principles calculation using plane-wave ultra-soft pseudo-potential technology based on the density-functional theory.Our results reveal that surface-layer C and Si atoms relax significantly upon decreasing the tube-wall thickness because of surface-size and quantum-size effects.We also find that all relaxed SiC NTs stay stably on the nanoscale because of an admixture of sp2 and sp3 hybridization between C and Si atoms and a strong covalent,and that the band gap tends to decrease with increasing tube-wall thickness.Our calculations further indicate that both C and Si atoms on the inner and outer surface of SiC NTs contribute to defect states at the top of the valence band and at the bottom of the conduction band.These results provide reference information for a thorough understanding of the properties of SiC nanostructures and also enable more precise monitoring and control of the growth of SiC nanostructures.     

Features of film growth during plasma anodizing of Al 2024/SiC metal matrix composite

Plasma anodizing is a novel promising process to fabricate corrosion-resistant protective films on metal matrix composites. The corrosion-resistant films were prepared by plasma anodizing on SiC reinforced aluminum matrix composite. The morphology and microstructure of films were analyzed by scanning electron microscopy. Specifically, the morphology of residual SiC reinforcement particles in the film was observed. It is found that the most SiC reinforcement particles have been molten to become silicon oxide, but a few tiny SiC particles still remain in the film close to the composite/film interface. This interface is irregular due to the hindering effect of SiC particles on the film growth. Morphology and distribution of residual SiC particles in film provide direct evidence to identify the local melt occurs in the interior of plasma anodizing film even near the composite/film interface. A model of film growth by plasma anodizing on metal matrix composites was proposed.     

Micro‐Raman analysis and finite‐element modeling of 3 C‐SiC microstructures

Micro‐ and nano‐electromechanical systems (MEMS and NEMS) fabricated in 3 C‐SiC are receiving particular attention thanks to the material physical properties: its wide band gap (2.3 eV), its ability to operate at high temperatures, its mechanical strength and its inertness to the exposure in corrosive environments. However, high residual stress (which is normally generated during the hetero‐epitaxial growth process) makes the use of 3 C‐SiC in Si‐based MEMS fabrication techniques very limited leading to a failure of micro‐machined/sensor structures. In this paper, micro‐Raman characterizations and finite‐element modeling (FEM) of microstructures realized on poly and single‐crystal (100) 3 C‐SiC/Si films are performed. Transverse optical (TO) Raman mode analysis reveals the stress relaxation on the free standing structure (796.5 cm⁻¹) respect to the stressed unreleased region (795.7 cm⁻¹). Also, microstructures as cantilever, bridge and planar rotating probe show an intense stress field located around the undercut region. Here, the TO Raman mode undergoes an intense shift, up to 2 cm⁻¹, ascribed to the modification of the Raman stress tensor. Indeed, the generalized axial regime, described by diagonal components of the Raman stress tensor, cannot be applied in this region. Raman maps analysis and FEM simulations show the ‘activation’ of the shear stress, i.e. non‐diagonal components of the stress tensor. The stress‐Raman modes shift correlation, in the case of fully non‐diagonal stress tensors, has been investigated. The aim of future works will be to minimize the stress field generation and the defects density within the epitaxial layer. Copyright © 2012 John Wiley & Sons, Ltd.     

不同LED光质对枳壳幼苗生长发育的影响

重庆是全国唯一的柑橘黄龙病非疫区及首创“柑橘良种无病毒三级繁育体系”的产区。但是,由于重庆年均日照时数少且年内分配不均,使其柑橘育苗周期显著长于其他产区,严重制约了重庆柑橘苗木产业的发展速度。利用新型节能光源发光二极管(LED)进行秋冬季补光,可缩短柑橘育苗周期,加快优质无毒柑橘新品苗木的繁育。为了阐明不同LED光质及配比对枳壳幼苗生长发育的影响,以砂培枳壳幼苗为试验材料,采用6种LED光处理(红光、蓝光、红蓝1∶1、红蓝4∶1、红黄蓝4∶1∶1 和白光),统计、测定了植株的表型和生物量指标, 为缩短柑橘砧木及新品种苗木繁育周期提供理论和实验依据。结果表明：与荧光灯相比较,不同的LED复合光均显著促进了根伸长、茎增粗(除红蓝1∶1外)、叶变窄;LED红蓝1∶1和红蓝4∶1复合光抑制茎伸长、叶片数形成,促进叶增厚,且后者的叶长被促进、叶面积增大;而红黄蓝4∶1∶1复合光促进茎伸长、叶形成、叶伸长、叶变薄和叶面积增大。相对于单色光来说LED白光及高比例红光的复合光更有利于枳壳幼苗物质合成以及其地上、地下物质分配量;且LED红黄蓝4∶1∶1复合光下枳壳幼苗地上部分的生物量最大,而根冠比最小。因此,LED红黄蓝4∶1∶1复合光最适宜于枳壳幼苗的物质合成与地上部分生长,可为光照不足季节或地区(特别是重庆地区)柑橘苗木的LED精准补光技术构建提供理论依据。     

正轴6H-SiC 衬底上3C-SiC薄膜的低压化学气相沉积生长

活性的O-和OH-被认为在苯酚形成过程中起了重要作用．通过低压化学气相沉积，在正轴6H-SiC(0001)衬底上沉积了3C-SiC薄膜，X射线衍射表明薄膜结晶质量良好．研究了生长参数对生长速率的影响，发现硅烷及其分解产物的输运是薄膜生长的限定因素．用原子力显微镜观察薄膜的表面形貌．这些结果表明薄膜的生长符合S-K方式．     

CaAlSiN_3∶Eu~(2+)荧光粉掺杂PC透光罩的制备及其在植物灯中的应用

为了实现传统白光LED光源与植物照明用光源之间的快速转换,采用高温熔融造粒的方式制备了不同质量分数CaAlSiN_3∶Eu~(2+)(CASN∶Eu~(2+))掺杂的荧光聚碳酸酯(PC)透光罩,并进行了结构和光学分析。制备了荧光PC透光罩配备的T8型LED灯管,测试了其EL光谱、相关光学性质以及对于生菜的种植效果。结果表明,CASN∶Eu~(2+)荧光粉在掺杂过程中性质稳定,该灯管随着配备的透光罩的荧光粉掺杂浓度的提高,相对应的WLED的色坐标从(0.3272,0.3467)变化到(0.3895,0.3824),色温从5757K下降到3807K,显色指数从70.3上升到77.6,但光效略有减弱。配备了荧光粉质量分数为4‰透光罩的T8型白光LED灯管的光质更适合生菜生长。