Penning阱中离子谱的优化

根据Penning阱存储离子的探测原理,系统分析了阱内离子信号及信号本身的噪声、实验仪器及探测电路的噪声干扰,采用适当的品质因数和电子束流,得到较高信噪比和分辨率的离子谱。为深入开展Hn^＋（n≥3）对离子的形成机制、离子与中性气体原子或分子碰撞过程等问题的研究创造了更好的条件。     

Penning阱中Hn+团簇离子的检测与确认

报道了在Penning阱中检测与确认Hn 团簇离子的方法,介绍了离子在阱中的运动,重点分析了离子存储条件、离子的产生与探测、离子信号的放大与检波以及离子谱的分辨.     

利用离子-中性光解碎片符合成像研究离子光解动力学

本文对最近研制的低温离子阱-离子速度成像谱仪进行升级,实现了探测离子光解反应的离子产物和中性产物速度影像的符合探测. 实验上利用自制的低温圆柱形离子阱对制备的离子样品进行富集和冷却. 从离子阱中引出的离子束准直后进入一组电势切换电极和离子速度聚焦成像系统开展激光光解实验. 利用一组新设计的离子引出、加速和聚焦电场,离子束可以被加速至4500 eV以上,使中性解离产物获得足够的平动能而被位置灵敏的影像探测器直接探测. 本文利用Ar₂⁺离子的355 nm光解反应对升级后的装置进行测试. 结果表明,光解产生的中性Ar原子和Ar⁺离子产物的速度影像分辨率分别为Δv/v≈4.6%和1.5%.     

Penning阱存储离子的高分辨分析

根据Penning阱中存储和探测离子的原理,研究改善离子谱分辨率的有效措施,发现离子谱的分辨率与LC振荡回路的Q值、阱中离子的密度及LC回路的谐振频率等因素有关.实验中,谐振频率为480千赫兹,Q在120左右,电子束流在40微安左右,真空度合适时,得到了较高分辨率的离子谱.最后对离子谱进行了辨认,离子分别是H+3,H+5,H+6,H+7.     

Penning阱存储离子的灵敏探测

对Ｐｅｎｎｉｎｇ阱中存储离子的探测原理和技术进行了研究,得到了较高探测灵敏度和较高信器比的Ｈ＋ｎ（ｎ＝１,２,３,４）离子谱,为开展离子与中性气体原子（或分子）碰撞过程等课题的研究创造了条件。     

表面离子阱的衬底效应模型研究及新型离子阱设计

通过分析表面离子阱衬底的功率损失和电势损失对离子阱阱深和离子加热速率的影响,提出考虑衬底效应的阱深和离子加热速率的解析分析模型.研究发现,硅基衬底的电势损失对表面离子阱阱深的降幅达17.19%,功率损失对离子加热速率的加速达13.37%.为了降低衬底效应的不利影响,设计了衬底真空隔离结构的表面离子阱,在离子阱射频电极和直流电极间的衬底表面刻蚀出多条隔离槽,从而减小衬底的等效电导和等效电容,达到降低衬底功率和电势损失的目的.模拟结果显示,相比于一般结构,真空隔离结构的硅基表面离子阱能够使阱深加深20.22%,使衬底功率损失降低54.55%.     

Paul阱中存储离子的研究

根据Paul离子阱结构及电场分布特点,列出阱内离子运动方程并求解,对其中离子运动、硅团簇离子碰撞解离反应进行了分析.     

联合阱中稳定囚禁离子的实验研究

实验观察到了小型联合阱稳定囚禁离子的射频信号增强现象，并以此对联合阱囚禁离子的特性进行了讨论；同时，通过实验检测到的稳定囚禁离子的工作点范围与磁场强度的关系，在一定程度上验证了联合阱囚禁离子稳定区随磁场强度的变化趋势。     

Paul阱中离子运动及稳定性分析

Paul离子阱由于没有外加磁场所引起的塞曼效应的影响,已成为离子存储及研究离子的重要装置.根据在实验中所采用的Paul离子阱结构及电场分布特点,列出阱内离子运动方程并进行求解,对其中各种运动进行分析,同时还分析了离子存储稳定性.最后对所作的研究进行总结,得到如下结论:阱中离子的运动为谐振运动、基频微运动和高阶微振动.     

Paul阱中199 Hg+离子囚禁与射频共振检测

射频囚禁源作为Paul阱实验装置重要部分之一,对离子的囚禁性能影响很大. 为了满足离子囚禁稳定性以及提高离子囚禁势阱深度,设计和制作出两套囚禁离子的射频源和射频共振吸收检测电路. 利用不同频率的射频源及相应检测电路在双曲线型离子阱实验装置中成功地囚禁了¹⁹⁹Hg⁺和N⁺₂离子得到了它们的射频共振吸收信号.     

All-optical ion generation for ion trap loading

We have investigated the all-optical generation of ions by photo-ionisation of atoms generated by pulsed laser ablation. A direct comparison between a resistively heated oven source and pulsed laser ablation is reported. Pulsed laser ablation with 10 ns Nd:YAG laser pulses is shown to produce large calcium flux, corresponding to atomic beams produced with oven temperatures greater than 650 K. For an equivalent atomic flux, pulsed laser ablation is shown to produce a thermal load more than one order of magnitude smaller than the oven source. The atomic beam distributions obey Maxwell–Boltzmann statistics with most probable speeds corresponding to temperatures greater than 2200 K. Below a threshold pulse fluence between 280 mJ/cm² and 330 mJ/cm², the atomic beam is composed exclusively of ground-state atoms. For higher fluences ions and excited atoms are generated.     

Penning阱中离子运动的分析

根据Penning离子阱结构及电磁场分布特点,列出阱内离子运动方程并进行求解,对其中沿z轴运动和在xy平面上的运动进行详细分析,最后得到比荷为m/q的离子在Penning阱内的运动为沿磁场方向的简谐振动、绕磁感线旋转的回旋运动和垂直于z轴及径向绕z轴的漂移运动的叠加.     

Development of arc ion sources for heavy ion fusion

An overview of the development of arc ion sources for heavy ion fusion is presented. Two approaches to heavy ion fusion (HIF)-the RF linac-storage ring approach and the induction linac approach-are described. RF linac schemes require low emittance and moderate current levels, because the beam is accumulated in storage rings before being focused on target. The induction linac approach requires low emittance and high current, because this is a single-pass approach to HIF and one wishes to limit the number of beams in the machine. The RF scheme generally uses long pulse sources together with a buncher of RFQ. The induction linac approach requires sources in the microsecond pulse length range, with good optics being maintained during the pulse. Emphasis is on the induction linac approach pursued at the Lawrence Berkeley Laboratory     

Enhanced electron–ion recombination in ion storage rings

We review recent advances in the understanding of the enhanced electron–ion recombination observed in storage ring experiments. The measured recombination rates show a strong enhancement relative to what the standard radiative recombination rates predict. A transient motional electric field is induced in the merging region of an electron and an ion beam in the electron cooler. This induced field opens an additional pathway for free-bound transitions of electrons. The formed Rydberg states can be radiatively stabilized and contribute to the measured rate. We show that this “field induced recombination” (FIR) explains the gap previously observed between measurements and the standard radiative recombination rate.     

ECR ion source based low energy ion beam facility

Mass analyzed highly charged ion beams of energy ranging from a few keV to a few MeV plays an important role in various aspects of research in modern physics. In this paper a unique low energy ion beam facility (LEIBF) set up at Nuclear Science Centre (NSC) for providing low and medium energy multiply charged ion beams ranging from a few keV to a few MeV for research in materials sciences, atomic and molecular physics is described. One of the important features of this facility is the availability of relatively large currents of multiply charged positive ions from an electron cyclotron resonance (ECR) source placed entirely on a high voltage platform. All the electronic and vacuum systems related to the ECR source including 10 GHz ultra high frequency (UHF) transmitter, high voltage power supplies for extractor and Einzel lens are placed on a high voltage platform. All the equipments are controlled using a personal computer at ground potential through optical fibers for high voltage isolation. Some of the experimental facilities available are also described.     

Secondary ion emission from Si under nitrogen ion bombardment

The yield and energy distribution of positive secondary ions emitted from Si under N₂⁺ ion bombardment were measured. The obtained mass peaks correspond to three types of secondary ion species, that is, physically sputtered ions (Si⁺, Si₂⁺), chemically sputtered ions (SiN⁺ Si₂N⁺) and doubly charged ions (Si²⁺). The dependence of secondary ion emission on the primary ion energy was studied in a range of 2.0–20.0 keV. The yields of physically and chemically sputtered ions were almost independent of the primary ion energy. The yield of the doubly charged ion strongly depended on the primary ion energy. The energy distribution of secondary ions of the three types showed the same dependence on the primary ion energy. The most probable energy of the distribution increased with the primary ion energy. On the other hand, for the energy distribution curves of sputtered ions, the tail factors N in E^?N were constant and showed a m/e dependence.