Synthesis and Characterization of Highly Oriented Sol-Gel (Pb, La) TiO3 Thin Film Optical Waveguides

The preparation and the optical characteristics of highly oriented PLT thin films are investigated. PLT films fabricated on MgO(100) and c-plane sapphire substrates have highly grown in (100) and (111) orientations, respectively. PLT films with high La content have a near cubic structure and weak anisotropy of refractive indices. The optical propagation losses of PLT films decrease as the La content of the films increases due to a complex interaction of surface roughness reduction and a reduction in the anisotropy refractive index. However, optical scattering in thicker sol-gel PLT thin film waveguides occurs by the internal scattering mechanism from the defects and the interfaces rather than by the surface scattering mechanism.     

CdO as the archetypical transparent conducting oxide. Systematics of dopant ionic radius and electronic structure effects on charge transport and band structure

A series of yttrium-doped CdO (CYO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates at 410 degrees C by metal-organic chemical vapor deposition (MOCVD), and their phase structure, microstructure, electrical, and optical properties have been investigated. XRD data reveal that all as-deposited CYO thin films are phase-pure and polycrystalline, with features assignable to a cubic CdO-type crystal structure. Epitaxial films grown on single-crystal MgO(100) exhibit biaxial, highly textured microstructures. These as-deposited CYO thin films exhibit excellent optical transparency, with an average transmittance of >80% in the visible range. Y doping widens the optical band gap from 2.86 to 3.27 eV via a Burstein-Moss shift. Room temperature thin film conductivities of 8,540 and 17,800 S/cm on glass and MgO(100), respectively, are obtained at an optimum Y doping level of 1.2-1.3%. Finally, electronic band structure calculations are carried out to systematically compare the structural, electronic, and optical properties of the In-, Sc-, and Y-doped CdO systems. Both experimental and theoretical results reveal that dopant ionic radius and electronic structure have a significant influence on the CdO-based TCO crystal and band structure: (1) lattice parameters contract as a function of dopant ionic radii in the order Y (1.09 A) < In (0.94 A) < Sc (0.89 A); (2) the carrier mobilities and doping efficiencies decrease in the order In > Y > Sc; (3) the dopant d state has substantial influence on the position and width of the s-based conduction band, which ultimately determines the intrinsic charge transport characteristics.     

Dopant ion size and electronic structure effects on transparent conducting oxides. Sc-doped CdO thin films grown by MOCVD

A series of Sc-doped CdO (CSO) thin films have been grown on both amorphous glass and single-crystal MgO(100) substrates at 400 degrees C by MOCVD. Both the experimental data and theoretical calculations indicate that Sc3+ doping shrinks the CdO lattice parameters due to its relatively small six-coordinate ionic radius, 0.89 angstroms, vs 1.09 angstroms for Cd2+. Conductivities as high as 18100 S/cm are achieved for CSO films grown on MgO(100) at a Sc doping level of 1.8 atom %. The CSO thin films exhibit an average transmittance >80% in the visible range. Sc3+ doping widens the optical band gap from 2.7 to 3.4 eV via a Burstein-Moss energy level shift, in agreement with the results of band structure calculations within the sX-LDA (screened-exchange local density approximation) formalism. Epitaxial CSO films on single-crystal MgO(100) exhibit significantly higher mobilities (up to 217 cm2/(V x s)) and carrier concentrations than films on glass, arguing that the epitaxial CSO films possess fewer scattering centers and higher doping efficiencies due to the highly textured microstructure. Finally, the band structure calculations provide a microscopic explanation for the observed dopant size effects on the structural, electronic, and optical properties of CSO.     

稀土掺杂Ba0.6Sr0.4TiO3薄膜的介电及发光性能

以钛酸锶钡和稀土氧化物粉末靶为靶材, 用离子束溅射法在MgO(100)和Si(100)基片上组合制备了不同掺杂浓度的Ba0.6Sr0.4TiO3:Re(BST:Re)薄膜样品阵列. 沉积得到的多层无定形薄膜经低温扩散、高温晶化, 形成BST:Re多晶薄膜. 以扫描近场微波显微镜测定BST:Re/MgO(Re=Er, Eu, Pr/Al)样品的介电常数, 研究掺杂种类及掺杂浓度对BST薄膜介电常数的影响. 结果表明, 稀土离子的适量掺杂使BST薄膜介电常数有所提高, 其中, Er3+和Eu3+的最佳掺杂浓度分别为4.5%及5.7%(原子分数) 左右时, 介电常数值达到最高. 而共掺杂Pr3+和Al3+的样品则在n(AL):n(Pr)为4-8之间介电性能最佳. 另外, 测量了BST:Re/Si(Re=Er, Eu)样品的光致发光谱, 发现Er3+和Eu3+在BST薄膜样品中的发光猝灭浓度分别为4.20%和8.95%(原子分数).     

Substrate dependent structure and in-plane dielectric properties of Ba(Sn0.15Ti0.85)O3 thin films

The structure, microstructure and in-plane dielectric properties of Barium tin titanate Ba(Sn_0.15Ti_0.85)O₃ (BTS) thin films grown on (100) LaAlO₃ (LAO) and (100) MgO single crystal substrates through sol–gel process were investigated. The films deposited on (100) LAO substrate exhibited a strong (100) preferred orientation while the film deposited on (100) MgO substrate showed polycrystalline structure. The in-plane ɛ–T measurements reveal that the films grown on (100) LAO substrate exhibited an obvious room-temperature ferroelectric state, while the film grown on MgO substrate showed paraelectric state in the temperature range of 10–130 °C. A high tunability of 52.11% was observed for the BTS films deposited on (100) LAO substrate at the frequency of 1 MHz with an applied electric field of 80 kV/cm, which is about two times larger than that of the BTS films deposited on (100) MgO substrate. The obvious differences in the dielectric properties could be attributed to the stress in the films, which come from lattice mismatch and difference in the thermal expansion coefficients between the film and substrates. This work clearly reveals the highly promising potential of BTS films for application in tunable devices.     

Characterization of a passivation layer comprising MgO?SiO2 and ZrO2

Thin films with magnesium oxide (MgO) and silicon oxide (SiO₂) compounds mixed at various mixture ratios were deposited on flexible polyether sulfone (PES) substrates by an e‐beam evaporator to investigate their potential for transparent barrier applications. In this study, as the MgO fraction increased, thin films comprising MgO and SiO₂ compounds became more amorphous, and their surface morphologies became smoother and denser. In addition, zirconium oxide (ZrO₂) was added to the above‐mentioned compound mixtures, and the properties of the compound mixture comprising Mg? Si? Zr? O were then measured. ZrO₂ made the thin mixture films more amorphous, and made the surface morphology denser and more uniform. Whole thin films of 250 ± 30 nm in thickness were formed, and their water vapor transmission rates (WVTRs) decreased rapidly. The best WVTR was obtained by depositing thin films of Mg? Si? Zr? O compound among the whole thin films. The WVTRs of the PES substrate in the bare state decreased from 47 to 0.8 g m^?2 day^?1. This Mg? Si? Zr? O compound was deposited on polyethylene terephtalate (PET) substrates again to confirm the availability of the compound mixture. Thin films on the PET substrates decreased the WVTRs remarkably from 2.96 to 0.01 g m^?2 day^?1. These results were similar to those of thin films on PES substrates. As the thin mixture films became more amorphous and surface morphology denser and more uniform, the WVTRs decreased. Therefore, the thin mixture films became more suitable for flexible organic light emitting displays (OLEDs) as transparent passivation layers against moisture in air. Copyright © 2006 John Wiley & Sons, Ltd.     

Dielectric and optical properties of BaTiO<Subscript>3</Subscript> thin films prepared by low-temperature process

Barium titanate (BaTiO₃) thin films have been prepared by low temperature processing on Pt/Ti/SiO₂/Si substrates using sol-gel-hydrothermal (SGHT) technique, which combined the conventional sol-gel process and hydrothermal method. X-ray diffraction analysis showed that the barium titanate thin films are polycrystalline. As-reacted barium titanate films grown on Pt(111)/Ti/SiO₂/Si(100) substrates had a dielectric constant (ε) and loss tangent (tanδ) of 80 and 0.05 at 1 MHz, respectively. The optical constants including refractive index n, extinction coefficient k, and absorption coefficient α of the barium titanate thin films in the wavelength range of 2.5–12.6 μm were obtained by infrared spectroscopic ellipsometry.     

Fabrication of surface-patterned ZnO thin films using sol–gel methods and nanoimprint lithography

Surface-patterned ZnO thin films were fabricated by direct imprinting on ZnO sol and subsequent annealing process. The polymer-based ZnO sols were deposited on various substrates for the nanoimprint lithography and converted to surface-patterned ZnO gel films during the thermal curing nanoimprint process. Finally, crystalline ZnO films were obtained by subsequent annealing of the patterned ZnO gel films. The optical characterization indicates that the surface patterning of ZnO thin films can lead to an enhanced transmittance. Large-scale ZnO thin films with different patterns can be fabricated by various easy-made ordered templates using this combination of sol–gel and nanoimprint lithography techniques.     

Electrical and Optical Properties of MgO Thin Film Prepared by Sol-Gel Technique

MgO thin films with either (111) or (200) preferential orientation have been prepared on (100) Si substrates by sol-gel method after a heat-treatment at 800°C. The obtained (111) preferentially oriented MgO film has a dielectric constant of 7.0 with a loss factor of 5% and a dielectric strength higher than 8 × 10⁵ V/cm. The optical refractive index, which depends on the film thickness, is 1.71 when the film thickness is 260 nm. The surface structure of the Si substrate is believed to affect the preferential orientation of the sol-gel derived MgO film. Specifically, the microstructures at the interface indicate an interdiffusion of Mg, O, and Si between the film and the substrate.     

Crystallization of textured PbTiO3 films deposited from gels

Sol-gel processed PbTiO₃ thin films have been deposited by spin coating onto different subtrates; Si[111], Si/Al, Si/SiO₂/Cr/Pt, MgO[100], SrTiO₃[100] and sapphire. Interactions between the substrate and PbTiO₃ films after heat treatment have been studied by X-ray diffraction and Rutherford Back Scattering. When deposited onto sapphire and Si[111], PbTiO₃ films exhibit a preferred orientation with (101) perpendicular to the substrate. These films become oriented along (100) onto MgO and (001) onto SrTiO₃[100] substrates. A strong channelling effect is observed by the RBS technique when the film is oriented along the c axis on SrTiO₃[100] suggesting that these films are epitaxially grown. The diffusion of metal atoms during the thermal treatment gives rise to the formation of lead silicate on Si[111] substrates. As a result a pyrochlore phase is formed. Lead titanate films on Si/SiO₂/Cr/Pt and Si/Al substrates are polycrystalline and do not exhibit any texture.     

Synthesis of two-dimensional gallium nitride via spin coating method: influences of nitridation temperatures

This paper reports the synthesis and characterization of gallium nitride (GaN) thin films deposited on p-type silicon (100) substrates by using low cost spin coating method under various nitridation temperatures. This work demonstrated that spin coating with the new prepared precursor solution can be used as a versatile method for the successfully growth of GaN thin films. Furthermore, the influence of varying nitridation temperatures on the structural, morphological, and optical properties of synthesized GaN thin films were studied in this work. The GaN thin films were characterized by X-ray diffraction, field-emission scanning electron microscopy, atomic force microscopy, photoluminescence and Raman spectroscopy. All the characteristics of the GaN thin films were effectively improved with the increasing of the nitridation temperatures from 750 to 950 °C and degraded at temperature of 1,050 °C. The measured results show that nitridation temperature plays an important role in improving the crystalline quality of the GaN thin films and the most efficient nitridation temperature was at 950 °C.     

热诱导金属/聚合物膜系图案化控制的研究

近年来 ,在简单体系上形成复杂规则的图案已引起诸多学者的注意 ,其中以聚合物为母体的体系发展了模板、局部紫外照射和激光诱导等一系列技术 ,从而得到可控的表面图案[1～ 6] .本文用激光刻蚀法对溅射在聚合物膜上的金属薄膜进行处理 ,在热诱导情况下使金属 /聚合物膜系表面产生了规则的图案 .薄膜热应力的可控释放作用和激光刻蚀造成的区域局限作用被认为是诱导这种可控图案产生的两种基本要素 .通过控制激光刻蚀区域 ,可控制薄膜表面形貌变化 ,从而实现可控的图案化设计 .1　实验部分1.1　原料及仪器　聚苯乙烯 (PS) :北京燕山石油化工…     

Significant suppression of leakage current in (Ba x ,Sr1-x )TiO3/MgO heterostructured thin films by thin MgO layers insertion

The leakage behavior and dielectric property of BST80/MgO heterostructured thin films deposited on LaNiO₃ (LNO)/Si substrates by sol-gel were investigated. The dielectric constant and the leakage current are modified by MgO insertion. The dramatic reduction in the leakage current effectively increased the charge retention of the capacitors consisted of heterostructured thin films as compared to the pure BST films. The significant reduction in the leakage current can be attributed to the minute solid solubility of MgO in the BST lattice and the potential barrier built in the interface between BST and MgO layers in the heterostructured thin films.     

Variation of lattice dimensions in epitaxial SnS films on MgO(001)

Epitaxial and polycrystalline SnS films were prepared on MgO(001) and glass substrates using molecular beam epitaxy. The films were characterized by X-ray diffraction method. The orientations of epitaxial films were (010)[100]SnS||(001)[100]MgO or (010)[001]SnS||(001)[100]MgO. Lattice parameters of the polycrystalline film closely resembled those of bulk SnS at room temperature. However, the lattice parameters of epitaxial films varied widely and were very different from those of bulk SnS at room temperature. Considering the lattice dimensions and a/c ratio, the films roughly correspond to bulk SnS at elevated temperatures from 371 to 666 K. SEM images of the films showed needle- or circular-like SnS crystallites segregated from the epitaxial films. Respective energies of indirect band gaps of the films and refractive index of the polycrystalline film were estimated using results of optical transmission experiments.     

Preparation and Characterization of MgO Thin Films by a Novel Sol-Gel Method

MgO thin films have been prepared on Si substrates by a novel and simple sol-gel method using magnesium nitrate and collodion as starting material. Solutions consisting of magnesium nitrate in a mixture of collodion and ethanol were spin-coated onto silicon substrates. It was found that collodion was a necessary component to form stable sols and the crystallization and structures were clearly dependent on the amount of the collodion and the annealing temperature. The MgO thin films with good crystallization were obtained after annealing at 800°C. Meanwhile, the microstructure of the MgO films was examined by transmission electron microscopy and atomic force microscopy.     

Thermal change of organic light-emitting ALQ3 thin films

A series of Alq3 thin films with the thicknesses of 50, 100, and 200 nm was deposited on Si substrates at room temperature using the thermal evaporation method. The thermal crystallization process of Alq3 thin films, especially 50 nm thick films, was successfully examined using high-temperature X-ray diffraction (HT-XRD) with the in-plane scan mode. Film thickness, density, and changes in surface roughness while heating were determined using X-ray reflectometry (XRR). The decreased density and increased surface roughness, which were accompanied by sublimation, indicate the instability of the Alq3 film. Thus, thermal instability is a major factor for device failure.     

Useful and accessible organometallic precursors for preparation of zinc sulfide and indium sulfide thin films via solution pyrolysis (printing) method

Polycrystalline β-zinc sulfide thin films were prepared by solution pyrolysis of an ethylzinc isopropylthiolate–zinc bis(dibutyldithiocarbamate) combined precursor (EtZnSiPr–Zn(S₂CNnBu₂)₂) in chloroform solution on glass or silicon(111) substrates at 300°C. Homogeneous but amorphous indium sulfide thin films were obtained from butylindium bis(isopropylthiolate) (nBuInSiPr₂) in P-xylene on these substrates at 300°C similarly. The sulfide thin films obtained were characterized by means of X-ray photoelectron spectroscopy (XPS), X-ray fluorescence Microanalysis, scanning electron microscopy (SEM) and optical band gap measurements.     

Dielectric and piezoelectric properties of dense and porous PZT films prepared by sol-gel method

PZT films with different microstructure and Zr:Ti ratios were fabricated on ITO/glass and platinized silicon wafer substrates by dip-coating. A dense film of 2% porosity and a porous film of 19% porosity were obtained by repetition of thin and thick coatings, respectively. Development of pores during heating the film was examined and heating process factors were investigated. In the film fabricated on ITO/glass substrates, an existence of non-perovskite and low permittivity layer was confirmed by measurement of film thickness dependence of the dielectric constant. Among the films studied, the film with molar composition of Ti:Zr = 5:5 exhibited the largest dielectric constant and apparent piezoelectric coefficient, d ₃₃, though the values were small. Apparent piezoelectric coefficients of d ₃₃ and g ₃₃ of the porous films were larger than those of the dense films.     

Dielectric,Ferroelectric Properties of KTa0.65Nb0.35O3 Thin Films Prepared by Sol-Gel Process on Pt(111)/Ti/MgO(100) Substrates

KTa_0.65Nb_0.35O₃(KTN) thin films were prepared by sol-gel process on Pt(111)/Ti/MgO(100) substrates from KOAc, Ta(OC₂H₅)₅ and Nb(OC₂H₅)₅ in ethanol. The KTN thin films had a prefferred (100) orientation on Pt(111)/Ti/MgO(100) substrates and contained a small amount of pyrochlore structure phase. The 0.8-m-thick KTN film showed a room-temperature relative permittivity of 2160 and a room-temperature dielectric loss of 0.0098 at 1.0 kHz. The maximum relative permittivity of the KTN film was 4232 at 294 K and 1.0 kHz. The remanent polarization and coercive field of the KTN film were 2.8 C/cm² and 5.0 kV/cm, respectively, at 263 K.     

Preparation and Optical Characterization of Sol-Gel Deposited Pb(Zr0.45Ti0.55)O3 Films

Homogeneous crack-free lead zirconate titanate (Pb(Zr_0.45Ti_0.55)O₃: PZT 45/55) films were prepared by a chemically modified sol-gel process using lead acetate trihydrate, zirconium n-propoxide, and titanium isopropoxide precursors. The coating solutions were modified by the addition of diethanolamine. Single and multilayer films were deposited with a 2000 rpm spin rate on fused silica and MgO(100) substrates. Multiple spin coating with an intermediate heat treatment in air at 400°C for 3 min between coatings was performed to obtain films up to 2 m in thickness. The formation of the tetragonal perovskite structure was found to depend on the intermediate firing temperature, final annealing temperature, and annealing time. A 650°C rapid thermal annealing treatment in oxygen was required to crystallize the PZT film into the perovskite structure. The films were characterized using optical spectroscopy, X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and thermo-gravimetry and differential scanning calorimetry (TG-DSC). The optical constants of the PZT films were evaluated from spectral transmittance and reflectance measurements. Optical constants are presented over the visible and near infrared region.