单步电沉积法制备CuInS2薄膜

采用单步电沉积法在Mo基底上制备了高质量的CuInS2薄膜. 用X射线衍射仪(XRD)和扫描电子显微镜(SEM)表征了样品的结构和形貌, 研究了沉积电位、退火温度、pH值、反应物浓度等工艺条件对制备的CuInS2薄膜形貌、组分及性能的影响. 制备的CuInS2薄膜致密平整, 呈黄铜矿结构, 晶粒大小为1-2 μm. 用紫外-可见光分光光度计测试了其光学性能, 计算得到常温下禁带宽度为1.41 eV, 非常适合用作薄膜太阳电池的吸收层材料.     

CuInSe_2薄膜的电化学沉积及其形成机理

采用电化学沉积法制备了太阳电池用CuInSe2薄膜.利用循环伏安法(CV)、X射线能谱(EDS)和X射线衍射技术(XRD)研究了电沉积过程中CuInSe2的形成机理,并研究了制备工艺对膜层成分、形貌和物相结构的影响.研究结果表明,铟进入固相是通过In3+受Cu3Se2诱导作用欠电势还原或者In3+与H2Se反应这两种途径实现;先沉积的Cu3Se2与新生成的铟或铟硒化合物反应最后生成CuInSe2.在阴极电位为-0.58~-0.9 V(vs.SCE)时出现了不随电位变化的极限还原电流,在该电位范围内进行电沉积获得了化学计量组成稳定可控且相对致密平整的CuInSe2薄膜.电沉积的CuInSe2薄膜经真空退火处理后结晶质量得到明显改善.     

镧在低共熔溶剂中的电沉积研究

以氯化胆碱/尿素低共熔溶剂为介质通过恒电位沉积法成功制备了形状和尺寸均一的橄榄状镧粒子. 采用扫描电子显微镜（SEM）、透射电子显微镜（TEM）、X射线能量色散谱（EDX）和X射线光电子能谱（XPS）等技术对所制备的样品进行表征. 同时,研究了沉积电位、温度和时间等因素对样品尺寸、形貌的影响,确定恒电位法制备橄榄状镧粒子的优化工艺条件为沉积电位-1.7 V、温度80 ^oC和沉积时间15 min.     

水溶液中电化学沉积GaSb相变存储薄膜

利用恒电位共沉积技术和热处理的方法成功制备了GaSb薄膜,探索了添加乙二醇溶剂对薄膜结晶性和形貌的影响. 采用循环伏安法初步研究了共沉积GaSb的机理,并用X-射线衍射技术（XRD）、扫描电子显微技术（SEM）和能谱分析（EDS）表征、观察样品. 研究表明,在沉积过程中,SbO⁺先还原成Sb单质,再诱导Ga³⁺发生共沉积;沉积电位对薄膜的结晶性、微观形貌和成分有显著影响;电解液加入乙二醇更利于在较正电位下直接沉积出GaSb,且有效地提高了薄膜的结晶度,改善了薄膜的微观形貌.     

CuInS2：两步电沉积制备及性能

采用恒电位沉积法制备铜铟合金预制膜,并存管式炉中通过固态源蒸发硫化预制膜得到CuInS:薄膜.通过扫描电镜(SEM)、能量色散谱仪(EDS)和X射线衍射仪(XRD)对CuInS2薄膜的表而形貌、截面厚度、成分组成和薄膜的组织结构进行了研究,并利用紫外可见光吸收谱仪(UV-Vis)研究了不同硫化温度对CuInS:薄膜的形貌及其光学吸收性质的影响.结果表明:不同的退火温度能够影响CuInS:薄膜的表面形貌以及带隙的大小,从而影响其光学吸收特性.     

ITO和ZnO基底对电化学沉积氧化亚铜薄膜的形貌、结构的影响及作用机制

采用电化学恒电位沉积方法在ITO导电玻璃上和在ZnO薄膜上沉积氧化亚铜(Cu₂O),并通过X射线衍射(XRD)和扫描电镜(SEM)对晶体的微观结构和表面形貌进行了分析.在ZnO基底上沉积得到了纳米级的Cu₂O粒子并且具有明显择优取向,而在ITO导电玻璃上仅得到粒径为2—5μm的Cu₂O粒子,没有明显的择优取向.对薄膜的生长机理进行了讨论.     

纯相Li_2MnO_3薄膜的制备及作为锂离子电池正极材料的电化学行为

采用固相烧结法制备了纯相Li2MnO3正极材料及靶材,采用脉冲激光沉积(PLD)法在氧气气氛、不同温度下沉积了Li2MnO3薄膜.通过X射线衍射(XRD)和拉曼(Raman)光谱表征了薄膜的晶体结构,采用扫描电镜(SEM)观察薄膜形貌及厚度,利用电化学手段测试了Li2MnO3薄膜作为锂离子电池正极材料性能.结果表明,PLD方法制备的纯相Li2MnO3薄膜随着沉积温度升高薄膜结晶性变好.25℃沉积的薄膜难以可逆充放电,400℃沉积的薄膜具有较高的电化学活性和循环稳定性.相对于粉末材料,400与600℃制备的Li2MnO3薄膜电极平均放电电位随着循环次数的衰减速率明显低于相应的粉体材料.     

pH值对电沉积CuInSe2薄膜的组份、结构及光电性能的影响

本文采用一步恒电位沉积法在铟锡氧化物(ITO)基底上制备CuInSe2薄膜,研究了沉积过程中不同的离子浓度配比及pH值对CuInSe2膜结构性能的影响。利用扫描电子显微镜(SEM)、X射线能谱仪(EDS)及X射线衍射仪(XRD)研究了薄膜材料的结构性能,结果发现pH值对薄膜的化学成份、表面形貌、晶格结构都有显著影响,通过控制合适的浓度及酸度分别制备了高质量富铟与富铜薄膜。利用表面光电压(SPS)技术分别对富铟与富铜薄膜的光电分离特性进行了研究,结果发现富铟薄膜具有很强的光电响应;而富铜薄膜由于Cu-Se相的存在,在薄膜中形成了新的界面,电子-空穴对在其界面处因捕获而发生复合,从而导致其光电响应的强烈降低。所得到的结果为提高铜铟硒薄膜的光电效率提供了有价值的新思路。     

类金刚石碳薄膜对碳膜导电性能的影响

以聚酰亚胺薄膜为原料,经炭化形成碳膜;进而在碳膜表面制备了类金刚石碳(DLC)薄膜,研究了制备条件对碳膜导电性能的影响.采用扫描电镜分析了薄膜的表面形貌和微观结构;采用X射线衍射仪分析了薄膜的晶体结构.结果表明,DLC薄膜的电阻率随着沉积时间的延长先减小后增加;当沉积时间达到3 h时,相应DLC薄膜的电阻率达到最小值5.66×10-5Ω.m.     

宽带隙Cu(In,Al)Se2薄膜的制备及表征

以特殊脉冲电沉积方法制备CuInSe2(CIS)前驱体薄膜, 通过真空蒸镀法在CIS薄膜上沉积Al膜, 经硒化退火后在氧化铟锡(ITO)基底上制备了Cu(InAl)Se2(CIAS)薄膜. 采用扫描电子显微镜(SEM)、X射线能谱(EDS)、X射线衍射(XRD)、X射线光电子能谱(XPS)、紫外-可见吸收光谱(UV-Vis)对其形貌、结构、成分及光学吸收性质进行了表征. 结果表明, 制备的CIAS薄膜颗粒均匀, 表面平整致密, 呈黄铜矿结构. 薄膜在可见光区具有良好的吸收, 带隙约为1.65 eV.     

TiO2-MoO3复合纳米管阵列薄膜的制备及其可见光活性

通过阳极氧化的方法制备TiO₂纳米管薄膜, 在MoO₃存在的条件下对该薄膜进行热处理得到TiO₂-MoO₃复合纳米管阵列薄膜. 利用X射线衍射(XRD), 扫描电子显微镜(SEM), X射线光电子能谱(XPS), 电化学阻抗谱(EIS), Mott-Schottky 及光电化学方法对得到的薄膜进行了表征. XRD结果表明, TiO₂-MoO₃复合纳米管薄膜中的TiO₂主要为锐钛矿晶型. SEM实验证实了薄膜纳米管结构的存在, 样品中的MoO₃均匀地分散在TiO₂纳米管表面. 利用XPS方法分析了TiO₂-MoO₃复合纳米管薄膜元素的组成, 结果表明, MoO₃在TiO₂表面形成TiO₂-MoO₃复合纳米管薄膜. 研究了热处理温度以及热处理时间对样品的光电化学性能的影响, 相对于单纯TiO₂纳米管薄膜, 适量引入MoO₃提高了样品在可见光区的光电响应能力, 样品的平带电位负移. 在450 °C热处理60 min制得的TiO₂-MoO₃复合半导体纳米管阵列薄膜光电响应活性最高.     

阳极氧化TiN薄膜制备N掺杂纳米TiO2薄膜及其可见光活性

室温下通过电泳沉积(EPD)的方法在Ti片表面制备TiN薄膜, 然后对TiN薄膜进行阳极氧化得到N掺杂多孔纳米结构的TiO2薄膜. 利用X射线衍射(XRD), X射线光电子能谱(XPS), 扫描电子显微镜(SEM)及光电化学方法对得到的薄膜进行表征. XRD测试结果表明, 经过阳极氧化并在350 ℃空气气氛中退火1 h的薄膜中存在锐钛矿晶型的TiO2. XPS的结果表明, 样品中的N元素取代部分O, 且N的摩尔分数为0.95%. SEM显示, 经阳极氧化后薄膜表面出现多孔纳米结构. 光电化学测试结果显示, 阳极氧化提高了N掺杂TiO2薄膜在可见光下的光电响应. 经阳极氧化并热处理的薄膜在0 V电位及可见光照射下光电流密度为2.325 μA·cm-2, 而单纯热处理的薄膜在相同条件下光电流密度仅为0.475 μA·cm-2. 阳极氧化得到纳米多孔结构提高了N掺杂纳米TiO2薄膜的表面积, 从而对可见光的响应增大.     

Structural stability and phase transitions in WO3 thin films

Tungsten oxide (WO3) thin films have been produced by KrF excimer laser (lambda = 248 nm) ablation of bulk ceramic WO3 targets. The crystal structure, surface morphology, chemical composition, and structural stability of the WO3 thin films have been studied in detail. Characterization of freshly grown WO3 thin films has been performed using X-ray diffraction (XRD), atomic force microscopy (AFM), energy-dispersive X-ray spectroscopy (EDX), Raman spectroscopy (RS), transmission electron microscopy (TEM), and selected area electron diffraction (SAED) measurements. The results indicate that the freshly grown WO3 thin films are nearly stoichiometric and well crystallized as monoclinic WO3. The surface morphology of the resulting WO3 thin film has grains of approximately 60 nm in size with a root-mean-square (rms) surface roughness of 10 nm. The phase transformations in the WO3 thin films were investigated by annealing in the TEM column at 30-500 degrees C. The phase transitions in the WO3 thin films occur in sequence as the temperature is increased: monoclinic --> orthorhombic --> hexagonal. Distortion and tilting of the WO6 octahedra occurs with the phase transitions and significantly affects the electronic properties and, hence, the electrochemical device applications of WO3.     

Deposition of Silicon Carbide Thin Films from 1,1-Dimethyl-1-Silacyclobutane

1,1-Dimethyl-1-silacyclobutane was used as a single-source precursor to deposit SiC thin films on Si(100) and Si(111) by low-pressure chemical vapor deposition (LPCVD). Polycrystalline β-SiC thin films were grown at temperatures 1100 and 1200°C. At temperatures between 950 and 1100°C, amorphous thin films of silicon carbide were obtained. The films were studied by X-ray diffraction (XRD), infrared spectroscopy (IR), scanning electron microscopy (SEM), scanning transmission electron microscopy (STEM), and electron diffraction (ED).     

Preparation and photochromism of Keggin-type molybdphosphoric acid/silica mesoporous composite thin films

Using tetraethoxysilane and 3-aminopropyltriethoxysilane as the silica sources, amino-functionalized organic/inorganic hybrid mesoporous silica thin films with 2-dimensional hexagonal structure have been synthesized by evaporation induced self-assembly process in the presence of cetyltrimethyl ammonium bromide templates under acid conditions. The Keggin-type molybdphosphoric acid (PMo) is incorporated into the mesoporous silica thin films with amino-groups by wetness impregnation, and the PMo/silica mesoporous composite thin films are obtained. The results of X-ray diffraction (XRD), high resolution transmission electron microscopy (HRTEM), and Fourier transform infrared (FTIR) spectra indicate the PMo molecules maintain Keggin structure and are homogeneously distributed inside mesopores. The composite thin films possess excellent reversible photochromic properties, and change from colorless to blue under ultraviolet irradiation. The photochromic mechanism of the composite thin films is studied by ultraviolet-visible (UV-vis), electron spin resonance (ESR) and X-ray photoelectron spectroscopy (XPS) spectra. It is shown that intervalence charge transfer (IVCT) and ligand-to-metal charge transfer (LMCT) are the main reasons of photochromism. PMo anions interact strongly with amino-groups of the mesoporous suface via hydrogen bond and electrostatic force. After ultraviolet irradiation, the charge transfer occurs by reduction of heteropolyanions accompanying the formation of heteropolyblues with multivalence Mo(VI, V), and the bleaching process of composite thin films is closely related to the presence of oxygen.     

介孔TiO2-ZnO复合薄膜的制备与表征

以三嵌段聚合物P123为模板剂, 以钛酸异丙酯和二水乙酸锌为无机前驱体, 利用溶胶-凝胶法和旋涂法成功地制备了不同ZnO含量的介孔TiO2-ZnO复合薄膜. 在ZnO前驱体摩尔分数为0~50％范围内获得薄膜质量较高的介孔TiO2-ZnO复合薄膜. 用小角XRD、扫描电子显微镜(SEM)、高分辨透射电子显微镜(HRTEM)、能谱仪(EDS)、紫外-可见吸收光谱(UV-Vis)及X射线光电子能谱(XPS)对所得的复合薄膜进行了表征和分析. EDS和XPS等研究证明介孔薄膜为TiO2和ZnO的复合体系, 且ZnO前驱体含量的增加仍能保持TiO2-ZnO复合薄膜的均匀性. UV-Vis研究结果表明, 介孔复合薄膜的光学带隙宽度为3.45-3.58 eV, 随着ZnO含量的增加, 复合薄膜的紫外吸收蓝移.     

纳米二氧化钒薄膜的制备及红外光学性能

采用双离子束溅射方法在Si3N4/SiO2/Si基底表面沉积氧化钒薄膜, 在氮气气氛下热处理获得二氧化钒薄膜. 利用X射线衍射(XRD)、扫描电子显微镜(SEM)和X射线光电子能谱(XPS)研究了热处理温度对氧化钒薄膜晶体结构、表面形貌和组分的影响, 利用傅里叶变换红外光谱(FT-IR)对二氧化钒薄膜的红外透射性能进行了测试分析. 结果表明, 所制备的氧化钒薄膜以非晶态V2O5和四方金红石结构VO2为主, 经400 ℃、2 h热处理后获得了(011)择优取向的单斜金红石结构纳米VO2薄膜, 提高热处理温度至450 ℃, 纳米结构VO2薄膜的晶粒尺寸减小. FT-IR结果显示,纳米VO2薄膜透射率对比因子超过0.99, 高温关闭状态下透射率接近0. 小晶粒尺寸纳米VO2薄膜更适合在热光开关器件领域应用.     

Preparation and properties of solution-processed zinc tin oxide films from a new organic precursor

Transparent,smooth and dense zinc tin oxide (ZTO) thin films have been successfully produced by using a new precursor solution,zinc acetate and tin(II) 2-ethylhexanoate mixed with 2-ethanolamine in methoxyethanol.The ZTO films have been prepared by spin-coating,followed by thermal treatment in oxygen atmosphere.The morphology,composition,crystallinity and band gap energy (Eg) of the ZTO thin films have been characterized by Atomic Force Microscopy (AFM),Atomic Emission Spectrometry (AES),X-ray Diffraction (...     

Structure and photochromic properties of molybdenumphosphoric acid/TiO_2 composite films

TiO_2 sol-gel composite films with dropping molybdenumphosphoric acid(PMoA) have been prepared by sol-gel method.The structure and constitute of composite thin films were studied with Fourier transforms infrared spectroscopy(FT-IR),atomic force microscopy(AFM),and X-ray diffraction(XRD) patterns,respectively.The photochromic behavior and mechanism of composite thin films were inves-tigated with ultraviolet-visible spectra(UV-vis) and electron spin resonance(ESR).FT-IR results showed that the Keggin geometry...