手性钙钛矿纳米材料的构筑及光电性能

金属卤化物钙钛矿纳米材料因其丰富的化学结构和优异的光电性能,已成为一种极具应用前景的半导体材料。在钙钛矿无机框架中引入有机手性分子后,能够比较容易地得到手性钙钛矿纳米材料,从而可以极大地推动智能光电材料和自旋电子器件的快速发展。本文将综述手性钙钛矿纳米材料的构筑与手性产生机理的最新研究进展,包括一维手性钙钛矿纳米线、二维及准二维手性有机-无机杂化钙钛矿纳米片、三维手性钙钛矿纳米晶、超分子组装体系中诱导的手性钙钛矿纳米晶等。值得注意的是,不同种类的手性钙钛矿纳米材料在圆二色性、圆偏振发光、铁电性、自旋电子学等方面展现出优异的光电性能及巨大的应用前景。但是,有关手性钙钛矿纳米材料的研究目前还处于初级阶段,其中很多机理还存在争议,许多基础性和应用型的工作也有待开展。     

无机半导体纳米晶光学性质的设计、调控及其生物医学应用

半导体纳米晶由于其丰富的能带结构和光学性质,在光电器件和生物医学应用等领域展现出了广阔的应用前景,且在过去的几十年中得到了广泛关注.因此,对其光学性质进行理性设计和精确调控具有重要的研究意义.本文简要综述了本研究组近年来在不同能带隙的无机半导体纳米晶的可控制备技术以及利用DNA纳米技术和蛋白质自组装手段构建具有特异光学性质的纳米结构等方面的相关研究工作,最后对这些纳米晶和纳米结构的独特光学性质及其在生物医学领域的应用研究进行了总结.     

碳量子点纳米材料在铅卤钙钛矿太阳能电池中的应用研究进展

碳量子点（CQDs）是一类粒径较小,光学性能显著,且电荷传输性能优异的类半导体纳米材料,在钙钛矿太阳能电池的性能调控和改善中得到广泛的应用。从CQDs纳米材料的合成、性能及应用出发,综述了CQDs纳米材料在钙钛矿太阳能光电器件中电子传输层、钙钛矿光吸收层和空穴传输层等方面的应用进展,并展望了该类材料调控钙钛矿太阳能器件性能的发展趋势。     

阳极氧化铝模板限域制备一维杂化纳米材料及其多样化应用的研究进展

一维杂化纳米材料以其独特的物理化学性质,在电学、光学、催化等领域得到了广泛的应用。 其制备方法对一维杂化纳米材料性能的改变和调控显得至关重要。 模板法作为一种简单而普适的合成工艺,近几年来被广泛应用于纳米结构和纳米阵列的合成。 本文主要介绍了阳极氧化铝(AAO)模板法制备一维杂化纳米材料整体情况、AAO模板结合其他技术材制备材料的方法、一维杂化纳米材料在刺激响应性器件、能量存储与转换器件、催化等众多领域的应用。     

2D钙钛矿太阳能电池的能带调控

经过短短十年的发展,钙钛矿太阳能电池效率已经超过25%,极具商业化价值,这得益于三维(3D)钙钛矿材料具有合适的带隙、吸光系数高、电子迁移距离长等优点。但3D钙钛矿的稳定性依然是其亟待解决的问题。二维(2D)钙钛矿器件除了兼具3D钙钛矿的优异光电性质之外,其稳定性良好,是解决3D钙钛矿太阳能电池稳定性问题的一个可行方案。2D钙钛矿晶格中的疏水性大烷基胺阳离子能阻止湿气侵入的可能路径,使其成为光电器件的备选材料。由于2D钙钛矿对许多不同的有机和无机成分具有较高的耐受性,使其组成具有多样性,进而影响其能带变化。本文对2D钙钛矿的带隙调控及能带调控进行总结,希望对制备高效、稳定的低维度钙钛矿太阳能电池具有一定的指导意义。     

卤化物钙钛矿微纳阵列的可控制备及应用

卤化物钙钛矿不仅具有光吸收系数高、激子束缚能低、载流子迁移率高等优异的光电性能,而且具有缺陷容忍度高、低温溶液法生长、带隙可调等传统半导体不具备的优点,迅速成为光电领域的研究热点之一。 在单个光电器件的基础上,开发阵列型器件将推动卤化物钙钛矿在(柔性)光电器件中的应用。 但卤化物钙钛矿因对常规有机溶剂较敏感而与现有光刻工艺不兼容,开发适合卤化物钙钛矿的微纳制作工艺尤为重要。 本文系统归纳了近年卤化物钙钛矿微纳阵列制备采用的各种策略和方法,分析了不同方法的优缺点和适用性,介绍了卤化物钙钛矿微纳阵列在光电领域的应用,并对该领域目前存在的问题及发展前景进行了展望,以期为新型卤化物钙钛矿光电器件的研究提供参考。     

多级复合半导体纳米材料的制备

金属氧化物、Ⅲ-Ⅴ、Ⅱ-Ⅵ等半导体纳米材料由于其独特的功能性质已广泛应用于光学、电子、太阳能转化、催化等领域,是当今先进材料领域的研究前沿与热点。随着科技的发展,人们对材料的高效、多功能要求已成为必然,对半导体材料发展要求亦如此。多组分复合、多层次结构协同是实现半导体纳米材料多功能化与高效化的有效途径。构筑多级结构组合纳米半导体,不但可以调控其能带结构而提高半导体材料的光电与催化性能,而且由于多级低维纳米结构聚集时形成的空间位阻效应可以有效克服纳米晶“易团聚”难题。本文提出多级结构组合纳米晶的概念、分类,结合近年来该领域的研究实践,较系统地综述了多级复合半导体纳米结构制备的最新研究进展。首先简要介绍了多级复合半导体纳米材料的概念与典型结构; 其次对典型多级复合半导体纳米材料的制备方法进行了重点评述,分别综述了液相法、气相法以及最新发展起来的静电纺丝等方法在多级结构半导体复合纳米材料制备中的应用实践。再其次,对以具有半导体特性的石墨烯及其功能化衍生物为基体的新型多级复合半导体纳米材料的制备做了综述。最后对半导体/半导体多级结构复合纳米材料的发展方向做了展望。     

钙钛矿阵列化组装及其多功能探测器的应用

钙钛矿材料优异的光电性能使其在高集成、 高性能、 多功能光电探测领域具有广泛的应用前景. 近年来, 科研人员致力于钙钛矿阵列化探测器的研究, 并取得了一系列重要的成果. 本文重点评述了钙钛矿材料的阵列化及其多功能探测器的制备和应用, 介绍了钙钛矿材料的结构分类、 阵列化集成方法及光电探测器的基本器件类型和性能指标, 并进一步阐述了基于钙钛矿一维阵列的高性能光电探测器及其多功能探测器的相关应用研究进展. 最后, 对该研究领域未来的发展方向进行了总结和展望.     

二维半导体合金的制备、结构和性质

原子层厚度的二维半导体材料因具有特殊的低维效应而被广泛研究. 面向光电器件应用, 需要可控调节二维半导体材料的能带结构, 包括带隙、价带/导带位置等. 合金方法是一种调控半导体能带的通用方法. 本综述介绍了近几年来二维半导体合金材料的研究进展, 包括材料的热力学稳定性、可控制备、结构表征和性质研究. 介绍的材料体系是过渡金属二硫族化物的单层合金材料, 金属元素主要是第六副族的Mo和W, 硫族元素主要是S和Se.     

激光作用铅卤钙钛矿的机理与应用

近年来,铅卤钙钛矿纳米晶因其易制备,低成本,高性能等特性引起了人们极大的关注。钙钛矿纳米晶的光电性能优越应用潜力巨大,然而稳定性问题制约着它进一步发展,使其无法与已经商业化的应用相匹敌。针对钙钛矿材料的稳定性问题,人们展开了很多研究,其中一个方面就是光照稳定性。该方面的研究可以为制备高稳定性钙钛矿材料和器件奠定基础,还可以利用光照(特别是激光)来调控钙钛矿的结构和性能,拓展其在光电领域的全方位应用。本文专注于激光照射下钙钛矿的变化及其相关应用,首先综述了激光辐照铅卤钙钛矿时出现的变化现象以及微观机理;其次,基于这些变化机理,介绍了最近研究人员如何使用激光技术对钙钛矿薄膜和器件进行性能调控,以及激光直写钙钛矿技术的相关应用。     

Towards Artificial Visual Sensory System: Organic Optoelectronic Synaptic Materials and Devices

Developing an artificial visual sensory system requires optoelectronic materials and devices that can mimic the behavior of biological synapses. Organic/polymeric semiconductors have emerged as promising candidates for optoelectronic synapses due to their tunable optoelectronic properties, mechanic flexibility, and biological compatibility. In this review, we discuss the recent progress in organic optoelectronic synaptic materials and devices, including their design principles, working mechanisms, and applications. We also highlight the challenges and opportunities in this field and provide insights into potential applications of these materials and devices in next-generation artificial visual systems. By leveraging the advances in organic optoelectronic materials and devices, we can envision its future development in artificial intelligence.     

Organolead trihalide perovskite materials for efficient light emitting diodes

Organolead trihalide perovskite materials have been attracting increasing attention due to their promising role in solid solar cells. Several advantages make them potential candidates for optoelectronics: (1) solution- or/and vapor-processed preparation at low temperature; (2) tunable optical bandgap, wide absorption spectrum but narrow photoluminescence peaks; (3) long carrier life time, large diffusion length and high charge mobility; (4) various nanostructures via tuning capping agents and solvents. In this review, we summarize recent attempts toward efficient LEDs based on organolead trihalide perovskite materials. The strategies of materials science, device design and interface engineering are highlighted. Recent development and future perspectives are summarized for practical perovskite light technologies.     

Spatial bandgap engineering along single alloy nanowires

Bandgap engineering of semiconductor nanowires is important in designing nanoscale multifunctional optoelectronic devices. Here, we report a facile thermal evaporation method, and realize the spatial bandgap engineering in single CdS(1-x)Se(x) alloy nanowires. Along the length of these achieved nanowires, the composition can be continuously tuned from x = 0 (CdS) at one end to x = 1 (CdSe) at the other end, resulting in the corresponding bandgap (light emission wavelength) being modulated gradually from 2.44 eV (507 nm, green light) to 1.74 eV (710 nm, red light). In spite of the existing composition (crystal lattice) transition along the length, these multicolor nanowires still possess high-quality crystallization. These bandgap engineered nanowires will have promising applications in such as multicolor display and lighting, high-efficiency solar cells, ultrabroadly spectral detectors, and biotechnology.     

Interface-directed assembly of one-dimensional ordered architecture from quantum dots guest and polymer host

Assembly of inorganic semiconductor nanocrystals into polymer host is of great scientific and technological interest for bottom-up fabrication of functional devices. Herein, an interface-directed synthetic pathway to polymer-encapsulated CdTe quantum dots (QDs) has been developed. The resulting nanohybrids have a highly uniform fibrous architecture with tunable diameters (ranging from several tens of nanometers to microscale) and enhanced optical performance. This interfacial assembly strategy offers a versatile route to incorporate QDs into a polymer host, forming uniform one-dimensional nanomaterials potentially useful in optoelectronic applications.     

钙钛矿二维纳米材料的合成和发光研究进展

钙钛矿纳米材料的研究取得了飞速发展:一方面,合成方法不断涌现,已经可以实现从零维纳米晶、一维纳米线到二维纳米片的形貌精确控制,对其尺寸和维度依赖的光学性质认识也不断深入;另一方面,钙钛矿纳米材料的光学和光电子应用也得到了快速发展,其中,基于钙钛矿量子点的光致发光和电致发光技术最受关注。 由于钙钛矿的天然层状结构,通过配体调控很容易制备出二维纳米材料,其发光性能可以通过层数和组分进行调节,最高量子产率超过85%,且具有偏振发光特性,有望成为一类新型发光材料。 本文从制备方法、光致发光和电致发光应用等方面综述了基于钙钛矿二维纳米材料的进展,并对其未来的发展方向进行讨论。     

Electroless Deposition of III–V Semiconductor Nanostructures from Ionic Liquids at Room Temperature

Group III–V semiconductor nanostructures are important materials in optoelectronic devices and are being researched in energy‐related fields. A simple approach for the synthesis of these semiconductors with well‐defined nanostructures is desired. Electroless deposition (galvanic displacement) is a fast and versatile technique for deposition of one material on another and depends on the redox potentials of the two materials. Herein we show that GaSb can be directly synthesized at room temperature by galvanic displacement of SbCl₃/ionic liquid on electrodeposited Ga, on Ga nanowires, and also on commercial Ga. In situ AFM revealed the galvanic displacement process of Sb on Ga and showed that the displacement process continues even after the formation of GaSb. The bandgap of the deposited GaSb was 0.9±0.1 eV compared to its usual bandgap of 0.7 eV. By changing the cation in the ionic liquid, the redox process could be varied leading to GaSb with different optical properties.     

Chemical regulation of metal halide perovskite nanomaterials for efficient light-emitting diodes

Metal halide perovskite nanomaterials emerged as attractive emitting materials for light-emitting diodes (LEDs) devices due to their high photoluminescence quantum yield (PLQY), narrow bandwidth, high charge-carrier mobility, bandgap tunability, and facile synthesis. In the past few years, it has been witnessed an unprecedented advance in the field of metal halide perovskite nanomaterials based LEDs (PeLEDs) with a rapid external quantum efficiency (EQE) increase from 0.1% to 14.36%. From the viewpoint of material chemistry, the chemical regulation of metal halide perovskite nanomaterials made a great contribution to the efficiency improvement of PeLEDs. In this review, we categorize the strategies of chemical regulation as A-site cation engineering, B-site ion doping, X-site ion exchange, dimensional confinement, ligand exchange, surface passivation and interface optimization of transport layers for improving the EQEs of PeLEDs. We also show the potentials of chemical regulation strategies to enhance the stability of PeLEDs. Finally, we present insight toward future research directions and an outlook to further improve EQEs and stabilities of PeLEDs aiming to practical applications.     

基于新型纳米传感材料的DNA生物传感器的应用

DNA是构建纳米技术和生物传感技术新设备的良好构建体。DNA生物传感器由于具有灵敏度高、选择性好等特点,近年来获得了飞速发展。研究发现,金属纳米粒子(MNPs)、碳基纳米材料等一系列纳米材料在传感器设计中提高了电化学DNA传感器的传感性能。本文侧重介绍了场效应晶体管、石墨烯、碳纳米管等新型纳米传感材料,以及基于这些材料的DNA生物传感器的最新进展,最后展望了DNA生物传感器的应用前景。