金属卤化物钙钛矿纳米晶高效发光二极管的制备与器件性能优化

金属卤化物钙钛矿作为一类新型的离子型直接带隙半导体材料在电致发光二极管(LED)中有着重要应用前景. 但实现其应用的前提在于金属卤化物钙钛矿材料需要保持高的发光效率和好的稳定性. 为了提高金属卤化物钙钛矿作为LED发光层的激子结合效率, 从而提升其发光效率, 设计和合成金属卤化物钙钛矿纳米晶材料是一个有效途径. 目前, 基于纳米晶材料设计的金属卤化物钙钛矿LED在绿光和红光(包括近红外光)范围已经展现了高的发光亮度和外量子效率(EQE), 其中最高EQE已经超过了20%, 但其稳定性仍无法满足器件应用的要求. 此外, 更值得关注且更重要的是, 蓝光钙钛矿LED的发光亮度和EQE目前仍然不高. 如何制备高效、 稳定的金属卤化物钙钛矿纳米晶LED, 特别是蓝光LED, 是一个具有重大应用前景且具有挑战性的课题. 本文重点介绍了金属卤化物钙钛矿纳米发光层的结构设计和合成方法及金属卤化物钙钛矿LED的研究进展, 分析了金属卤化物钙钛矿LED不稳定的原因, 并对金属卤化物钙钛矿LED研究面临的挑战和未来发展方向进行了总结与展望.     

蓝光钙钛矿发光二极管:机遇与挑战

金属卤化钙钛矿由于具有优异的光电性能(如:高电子/空穴迁移率,高荧光量子产率,高色纯度,以及光色可调性等),成为应用于发光二极管(LED)的理想材料。近年来,钙钛矿LED的发展十分迅速,红光和绿光钙钛矿LED的外量子效率(EQE)均已超过20%。然而,蓝光(尤其是深蓝光)钙钛矿LED的EQE以及稳定性依然相对落后,这严重制约了钙钛矿LED在高性能、广色域显示领域和高显色指数白光照明领域的应用。因此,总结现阶段蓝光钙钛矿LED的发展,并剖析其机遇与挑战,对未来蓝光甚至整个钙钛矿LED领域的发展至关重要。本文将蓝光钙钛矿LED根据光色细分为天蓝光、纯蓝光、深蓝光三大部分进行总结,回顾了三种LED器件的发展历程,并详细阐述了现阶段实现他们的主要手段以及相关的基础原理,最后分析了它们各自的问题并提出了相应的解决思路。     

High‐Performance Perovskite Light‐Emitting Diode with Enhanced Operational Stability Using Lithium Halide Passivation

Defect passivation has been demonstrated to be effective in improving the radiative recombination of charge carriers in perovskites, and consequently, the device performance of the resultant perovskite light‐emitting diodes (LEDs). State‐of‐the‐art useful passivation agents in perovskite LEDs are mostly organic chelating molecules that, however, simultaneously sacrifice the charge‐transport properties and thermal stability of the resultant perovskite emissive layers, thereby deteriorating performance, and especially the operational stability of the devices. We demonstrate that lithium halides can efficiently passivate the defects generated by halide vacancies and reduce trap state density, thereby suppressing ion migration in perovskite films. Efficient green perovskite LEDs based on all‐inorganic CsPbBr₃ perovskite with a peak external quantum efficiency of 16.2 %, as well as a high maximum brightness of 50 270 cd m^?2, are achieved. Moreover, the device shows decent stability even under a brightness of 10⁴ cd m^?2. We highlight the universal applicability of defect passivation using lithium halides, which enabled us to improve the efficiency of blue and red perovskite LEDs.     

High-Performance Perovskite Light-Emitting Diode with Enhanced Operational Stability Using Lithium Halide Passivation

Defect passivation has been demonstrated to be effective in improving the radiative recombination of charge carriers in perovskites, and consequently, the device performance of the resultant perovskite light-emitting diodes (LEDs). State-of-the-art useful passivation agents in perovskite LEDs are mostly organic chelating molecules that, however, simultaneously sacrifice the charge-transport properties and thermal stability of the resultant perovskite emissive layers, thereby deteriorating performance, and especially the operational stability of the devices. We demonstrate that lithium halides can efficiently passivate the defects generated by halide vacancies and reduce trap state density, thereby suppressing ion migration in perovskite films. Efficient green perovskite LEDs based on all-inorganic CsPbBr₃ perovskite with a peak external quantum efficiency of 16.2 %, as well as a high maximum brightness of 50 270 cd m⁻², are achieved. Moreover, the device shows decent stability even under a brightness of 10⁴ cd m⁻². We highlight the universal applicability of defect passivation using lithium halides, which enabled us to improve the efficiency of blue and red perovskite LEDs.     

Iodotrimethylsilane as a Reactive Ligand for Surface Etching and Passivation of Perovskite Nanocrystals toward Efficient Pure-red to Deep-red LEDs

Resurfacing perovskite nanocrystals (NCs) with tight-binding and conductive ligands to resolve the dynamic ligands—surface interaction is the fundamental issue for their applications in perovskite light-emitting diodes (PeLEDs). Although various types of surface ligands have been proposed, these ligands either exhibit weak Lewis acid/base interactions or need high polar solvents for dissolution and passivation, resulting in a compromise in the efficiency and stability of PeLEDs. Herein, we report a chemically reactive agent (Iodotrimethylsilane, TMIS) to address the trade-off among conductivity, solubility and passivation using all-inorganic CsPbI₃ NCs. The liquid TMIS ensures good solubility in non-polar solvents and reacts with oleate ligands and produces in situ HI for surface etching and passivation, enabling strong-binding ligands on the NCs surface. We report, as a result, red PeLEDs with an external quantum efficiency (EQE) of ≈23 %, which is 11.2-fold higher than the control, and is among the highest CsPbI₃ PeLEDs. We further demonstrate the universality of this ligand strategy in the pure bromide system (CsPbBr₃), and report EQE of ≈20 % at 640, 652, and 664 nm. This represents the first demonstration of a chemically reactive ligand strategy that applies to different systems and works effectively in red PeLEDs spanning emission from pure-red to deep-red.     

Low-Dimensional Phase Regulation to Restrain Non-Radiative Recombination for Sky-Blue Perovskite LEDs with EQE Exceeding 15 %

Achieving efficient blue electroluminescence (EL) remains the fundamental challenge that impedes perovskite light-emitting diodes (PeLEDs) towards commercial applications. The bottleneck accounting for the inefficient blue PeLEDs is broadly attributed to the poor-emissive blue perovskite emitters based on either mixed halide engineering or reduced-dimensional strategy. Herein, we report the high-performing sky-blue PeLEDs (490 nm) with the maximum EQE exceeding 15 % by incorporating a molecular modifier, namely 4,4′-Difluorophenone, for significantly suppressing the non-radiative recombination and tuning of the low-dimensional phase distribution of quasi-2D blue perovskites, which represents a remarkable paradigm for developing the new generation of blue lighting sources.     

Manipulating Local Lattice Distortion for Spectrally Stable and Efficient Mixed-halide Blue Perovskite LEDs

Mixed-halide perovskites are considered the most straightforward candidate to realize blue perovskite light-emitting diodes (PeLEDs). However, they suffer severe halide migration, leading to spectral instability, which is particularly exaggerated in high chloride alloying perovskites. Here, we demonstrate energy barrier of halide migration can be tuned by manipulating the degree of local lattice distortion (LLD). Enlarging the LLD degree to a suitable level can increase the halide migration energy barrier. We herein report an “A-site” cation engineering to tune the LLD degree to an optimal level. DFT simulation and experimental data confirm that LLD manipulation suppresses the halide migration in perovskites. Conclusively, mixed-halide blue PeLEDs with a champion EQE of 14.2 % at 475 nm have been achieved. Moreover, the devices exhibit excellent operational spectral stability (T₅₀ of 72 min), representing one of the most efficient and stable pure-blue PeLEDs reported yet.     

Achieving High Efficiency at High Luminance in Fluorescent Organic Light-Emitting Diodes through Triplet–Triplet Fusion Based on Phenanthroimidazole-Benzothiadiazole Derivatives

Achieving high efficiency at high luminance is one of the most important prerequisites towards practical application of any kind of light-emitting diode (LED). Herein, we report highly emissive organic fluorescent molecules based on phenanthroimidazole-benzothiadiazole derivatives capable of maintaining high external quantum efficiency (EQE) at high luminance enabled by triplet–triplet fusion (TTF) in doped organic LEDs. The PIBzP-, PIBzPCN-, and PIBzTPA-based devices showed EQEs of 8.27, 9.15, and 8.64 %, respectively, at luminance of higher than 1000 cd m⁻², with little efficiency roll-off.     

Single-emissive-layer all-perovskite white light-emitting diodes employing segregated mixed halide perovskite crystals

Metal halide perovskites have demonstrated impressive properties for achieving efficient monochromatic light-emitting diodes. However, the development of white perovskite light-emitting diodes (PeLEDs) remains a big challenge. Here, we demonstrate a single-emissive-layer all-perovskite white PeLED using a mixed halide perovskite film as the emissive layer. The perovskite film consists of separated mixed halide perovskite phases with blue and red emissions, which are beneficial for suppressing halide anion exchange and preventing charge transfer. As a result, the white PeLED shows balanced white light emission with Commission Internationale de L''Eclairage coordinates of (0.33, 0.33). In addition, we find that the achievement of white light emission from mixed halide perovskites strongly depends on effective modulation of the halide salt precursors, especially lead bromide and benzamidine hydrochloride in our case. Our work provides very useful guidelines for realizing single-emissive-layer all-perovskite white PeLEDs based on mixed halide perovskites, which will spur the development of high-performance white PeLEDs.

We demonstrated a single-emissive-layer all-perovskite white light-emitting diode based on a mixed halide perovskite film.     

Mesoporous Silica Particles Integrated with All‐Inorganic CsPbBr3 Perovskite Quantum‐Dot Nanocomposites (MP‐PQDs) with High Stability and Wide Color Gamut Used for Backlight Display

All‐inorganic CsPbX₃ (X=I, Br, Cl) perovskite quantum dots (PQDs) have been investigated because of their optical properties, such as tunable wavelength, narrow band, and high quantum efficiency. These features have been used in light emitting diode (LED) devices. LED on‐chip fabrication uses mixed green and red quantum dots with silicone gel. However, the ion‐exchange effect widens the narrow emission spectrum. Quantum dots cannot be mixed because of anion exchange. We address this issue with a mesoporous PQD nanocomposite that can prevent ion exchange and increase stability. We mixed green quantum‐dot‐containing mesoporous silica nanocomposites with red PQDs, which can prevent the anion‐exchange effect and increase thermal and photo stability. We applied the new PQD‐based LEDs for backlight displays. We also used PQDs in an on‐chip LED device. Our white LED device for backlight display passed through a color filter with an NTSC value of 113 % and Rec. 2020 of 85 %.     

Ligand Engineering Enables Efficient Pure Red Tin-Based Perovskite Light-Emitting Diodes

With increasing ecological and environmental concerns, tin (Sn)-based perovskite light-emitting diodes (PeLEDs) are competitive candidates for future displays because of their environmental friendliness, excellent photoelectric properties, and low-cost solution-processed fabrication. Nonetheless, their electroluminescence (EL) performance still lags behind that of lead (Pb)-based PeLEDs due to the fast crystallization rate of Sn-based perovskite films and undesired oxidation from Sn²⁺ to Sn⁴⁺, leading to poor film morphology and coverage, as well as high density defects. Here, we propose a ligand engineering strategy to construct high-quality phenethylammonium tin iodide (PEA₂SnI₄) perovskite films by using L-glutathione reduced (GSH) as surface ligands toward efficient pure red PEA₂SnI₄-based PeLEDs. We show that the hydrogen-bond and coordinate interactions between GSH and PEA₂SnI₄ effectively reduce the crystallization rate of the perovskites and suppress the oxidation of Sn²⁺ and formation of defects. The improved pure red perovskite films not only show excellent uniformity, density, and coverage but also exhibit enhanced optical properties and stability. Finally, state-of-the-art pure red PeLEDs achieve a record external quantum efficiency of 9.32 % in the field of PEA₂SnI₄-based devices. This work demonstrates that ligand engineering represents a feasible route to enhance the EL performance of Sn-based PeLEDs.     

Multiple-quantum-well perovskite for hole-transport-layer-free light-emitting diodes

We demonstrate hole-transport-layer-free light-emitting diodes(LEDs) based on solution-processed multiple-quantum-well(MQW) perovskite. The MQW perovskite can self-assemble to a unique structure of vertically graded distribution with two-dimensional layered perovskite covered by three-dimensionallike perovskite at top, which can naturally form a barrier of electron transporting to the anode interface,thereby enhancing the charge capture efficiency. This leads to hole-transport-layer-free MQW per...     

Wide-coverage and Efficient NIR Emission from Single-component Nanophosphors through Shaping Multiple Metal-halide Packages

Wide-coverage near infrared (NIR) phosphor-converted LEDs possess promising potential for practical applications, but little is developed towards the efficient and wide-coverage NIR phosphors. Here, we report the single-component lanthanide (Ln³⁺) ions doped Cs₂M(In_0.95Sb_0.05)Cl₆ (M=alkali metal) nanocrystals (NCs), exhibiting emission from 850 to 1650 nm with high photoluminescence quantum yield of 20.3 %, which is accomplished by shaping the multiple metal halide octahedra of double perovskite via the simple alkali metal substitution. From Judd-Ofelt theoretical calculation and spectroscopic investigations, the shaping of metal halide octahedra in Cs₂M(In_1−xSb_x)Cl₆ NCs can break the forbidden of f-f transition of Ln³⁺, thus increasing their radiative transition rates and simultaneously boosting the energy transfer efficiency from host to Ln³⁺. Finally, the wide-coverage NIR LEDs based on Sm³⁺, Nd³⁺, Er³⁺-tridoped Cs₂K_0.5Rb_0.5(In_0.95Sb_0.05)Cl₆ NCs are fabricated and employed in the multiplex gas sensing and night-vision application.     

无机铅卤钙钛矿纳米晶的合成、性能及应用

无机铅卤钙钛矿CsPbX₃(X=Cl,Br,I)纳米晶因具有较高荧光量子效率(~90%)、发光波长覆盖整个可见光谱(400~700 nm)、半高宽相对较窄(12~42 nm)等诸多优点而备受关注,这些性能使之成为当前最具有潜在应用价值的发光材料之一。 因此,近年来对该类无机铅卤钙钛矿材料的报道越来越多。 本文主要介绍了无机铅卤钙钛矿发光材料的发展历程、结构、制备方法、生长机理及当前的主要应用领域等,最后概括了无机铅卤钙钛矿发光材料在当前研究背景下所面临的问题并展望了下一阶段的发展方向,为进一步提高其光学性能及开发新型高效的无机铅卤钙钛矿发光材料奠定基础。     

Using steric hindrance to manipulate and stabilize metal halide perovskites for optoelectronics

The chemical instability of metal halide perovskite materials can be ascribed to their unique properties of softness, in which the chemical bonding between metal halide octahedral frameworks and cations is the weak ionic and hydrogen bonding as in most perovskite structures. Therefore, various strategies have been developed to stabilize the cations and metal halide frameworks, which include incorporating additives, developing two-dimensional perovskites and perovskite nanocrystals, etc. Recently, the important role of utilizing steric hindrance for stabilizing and passivating perovskites has been demonstrated. In this perspective, we summarize the applications of steric hindrance in manipulating and stabilizing perovskites. We will also discuss how steric hindrance influences the fundamental kinetics of perovskite crystallization and film formation processes. The similarities and differences of the steric hindrance between perovskite solar cells and perovskite light emission diodes are also discussed. In all, utilizing steric hindrance is a promising strategy to manipulate and stabilize metal halide perovskites for optoelectronics.

Manipulation on steric hindrance can influence the fundamental kinetics of perovskite crystallization and film formation, therefore stabilizing and passivating perovskite structures, and promoting the commercialization of stable perovskite devices.     

Overcoming the Ambient Manufacturability-Performance Bottleneck in Perovskite Nanocrystal Emitters for Efficient Light-Emitting Diodes

Colloidal perovskite nanocrystals (NCs) have risen rapidly in luminescence efficiency and color purity. However, their high performance requires careful and complex pre-treatment of precursors and precise regulation of the reaction atmosphere; otherwise, their emission will be weak and broad. To overcome these limitations, we develop a facile ligand exchange method using a new type of bidentate ligand, which is obtained by reacting cheap sulfur with tributylphosphine (S-TBP). During ligand exchange, the double bond between P and S atoms breaks and a single bond is formed between them, after which S-TBP switches into a bidentate ligand and binds to a perovskite NC at two points. With short-chain S-TBP ligands that have high spatial position resistance, both NC spacing and surface ligand density can be reduced, thereby improving carrier injection and transport. On the NC surface after ligand exchange, halogen vacancies were substantially filled, leading to a PbSP (Pb, S, and P elements) component-dominated shell that greatly decreases trap density and enhances material stability. The resulting perovskite NCs are stable and bright with a photoluminescence quantum yield of ≈96 %, and an external quantum efficiency of 22 %. Note that our ligand-exchange strategy remains effective even when scaling up, which should accelerate commercialization.     

Improved Performance of All-Inorganic Perovskite Light-emitting Diodes via Nanostructured Stamp Imprinting

Halide perovskites are emerging emitters with excellent optoelectronic properties. Contrary to the large grain fabrication goal in perovskite solar cells, perovskite light-emitting diodes (PeLEDs) based on small grain enable efficient radiative recombination because of relatively higher charge carrier densities due to spatial confinement. However, achieving small-sized grain growth with superior crystal quality and film morphology remains a challenge. In this work, we demonstrated a nanostructured stamp thermal imprinting strategy to boost the surface coverage and improve the crystalline quality of CsPbBr₃ film, particularly confine the grain size, leading to the improvement of luminance and efficiency of PeLEDs. We improved the thermal imprinting process utilizing the nanostructured stamp to selectively manipulate the nucleation and growth in the nanoscale region and acquire small-sized grain accompanied by improved crystal quality and surface morphology of the film. By optimizing the imprinting pressure and the period of the nanostructures, appropriate grain size, high surface coverage, small surface roughness and improved crystallization could be achieved synchronously. Finally, the maximum luminance and efficiency of PeLEDs achieved by nanostructured stamp imprinting with a period of 320 nm are 67600 cd/m² and 16.36 cd/A, respectively. This corresponds to improvements of 123 % in luminance and 100 % in efficiency, compared to that of PeLEDs without the imprinting.     

阴极界面修饰层改善平面p-i-n型钙钛矿太阳能电池的光伏性能

有机/无机杂化金属卤化物钙钛矿半导体材料结合了有机材料良好的溶液可加工性以及无机材料优越的光电特性,近几年受到了热捧,成为太阳能电池领域一颗耀眼的明星. 伴随着钙钛矿薄膜结晶过程和形貌的优化、器件结构的改进以及电极界面材料的开发,这类有机/无机杂化金属卤化物钙钛矿太阳能电池的光电转换效率从最初的3.8%迅速提高到目前最高的22.1%. 其中界面工程在提升器件性能上发挥着极其重要的作用. 本文总结了平面p-i-n型钙钛矿太阳能电池中阴极界面修饰层（CBL）的研究进展. CBL从材料上讲可分为无机金属氧化物、金属或金属盐以及有机材料,从构成上讲可分为单层CBL、双层CBLs以及共混型CBL. 本文对这些类型的CBL分别给予详细的介绍. 最后,我们归纳出CBL在改善器件效率和稳定性上所起的作用以及理想CBL所应满足的要求,希望能为以后阴极界面修饰材料的设计提供一定的借鉴.     

Increased Synthetic Control—Gaining Access to Predicted Mg2Si5N8 and β‐Ca2Si5N8

Nitridosilicates represent an intriguing class of materials and are typically made up of highly condensed tetrahedral network structures. Alkaline‐earth nitridosilicates emerged as unique host materials for Eu²⁺ doped luminophores which found broad application in phosphor‐converted (pc)‐LEDs. In contrast to common strategies of preparing nitridosilicates by bottom‐up syntheses, we have now succeeded to post‐synthetically design nitridosilicates by ion exchange in metal halide melts. We describe the syntheses of hitherto unknown but predicted alkaline‐earth nitridosilicates, Mg₂Si₅N₈ and β‐Ca₂Si₅N₈. Both compounds were obtained by ion exchange starting from pre‐synthesized nitridosilicates. In situ investigations of the ion‐exchange process show that the Si–N network topology remains preserved. Therefore the reaction offers a significant increase of synthetic control with respect to classical bottom‐up syntheses.     

钙钛矿二维纳米材料的合成和发光研究进展

钙钛矿纳米材料的研究取得了飞速发展:一方面,合成方法不断涌现,已经可以实现从零维纳米晶、一维纳米线到二维纳米片的形貌精确控制,对其尺寸和维度依赖的光学性质认识也不断深入;另一方面,钙钛矿纳米材料的光学和光电子应用也得到了快速发展,其中,基于钙钛矿量子点的光致发光和电致发光技术最受关注。 由于钙钛矿的天然层状结构,通过配体调控很容易制备出二维纳米材料,其发光性能可以通过层数和组分进行调节,最高量子产率超过85%,且具有偏振发光特性,有望成为一类新型发光材料。 本文从制备方法、光致发光和电致发光应用等方面综述了基于钙钛矿二维纳米材料的进展,并对其未来的发展方向进行讨论。