50—5000 eV电子被C4H8O,C5H10O2, C6H5CH3和C4H8O2散射的总截面

使用电子被C, H和O原子散射总截面的实验数据, 利用修正后的可加性规则计算了能量为50—5000eV的电子被4个复杂大分子C₄H₈O, C₅H₁₀O₂, C₆H₅CH₃和C₄H₈O₂散射的总截面, 并将计算结果与实验结果及其他理论计算结果进行了比较. 结果表明, 即 关键词： 电子散射 可加性规则 总截面 几何屏蔽效应     

电子回旋共振等离子体增强沉积氟化非晶碳薄膜的光学性质

用紫外可见光透射光谱(UV-VIS)并结合键结构的X射线光电子能谱(XPS)和红外谱(FTIR)分析,研究了电子回旋共振等离子体增强化学气相沉积法制备的氟化非晶碳薄膜的光吸收和光学带隙性质.在微波功率为140—700W、源气体CHF₃∶C₆H₆比例为1∶1—10∶1条件下沉积的薄膜,光学带隙在1.76—2.85eV之间.薄膜中氟的引入对吸收边和光学带隙产生较大的影响,吸收边随氟含量的提高而增大,光学带隙则主要取决于CF键的含量,是由于强电负 关键词： 氟化非晶碳薄膜 光吸收与光学带隙 电子回旋共振等离子体     

强激光照射对2H-SiC晶体电子特性的影响

使用基于密度泛函微扰理论的第一原理赝势法, 计算了纤锌矿结构2H-SiC晶体在强激光照射下的电子特性, 分析了其能带结构和电子态分布. 计算结果表明: 2H-SiC平衡晶格参数a 和c随电子温度T_e的升高逐渐增大; 电子温度在0–2.25 eV范围内时, 2H-SiC仍然是间接带隙的半导体晶体, 当T_e超过2.25 eV达到2.5 eV以上时, 2H-SiC变为直接带隙的半导体晶体; 随着电子温度升高, 导带底和价带顶向高能量或低能量方向发生了移动, 当电子温度T_e大于3.5 eV以后, 价带顶穿越费米能级; 电子温度T_e在0–2.0 eV变化时, 带隙随电子温度升高而增大; T_e在2.0–3.5 eV范围变化时, 带隙随电子温度升高而快速地减少, 表明2H-SiC晶体的金属性随电子温度T_e的继续升高而增强. 在T_e =0, 5.0 eV 处, 计算了2H-SiC晶体总的电子态密度和分波态密度. 电子结构表明T_e =0 eV 时, 2H-SiC 是一个带隙为2.3 eV的半导体; 在T_e =5.0 eV时, 带隙已经消失而呈现出金属特性, 表明当电子温度升高时晶体的共价键变弱、金属键增强, 晶体经历了一个熔化过程, 过渡到金属状态.     

高压下Zn2GeO4带隙变化的第一性原理研究

采用基于密度泛函理论的第一性原理计算研究了Zn₂GeO₄晶体在高压下的电子结构和带隙变化行为. 研究结果发现, 随着压强的增加, Zn₂GeO₄ 能带间隙先变大, 在压强为9.7 GPa时达到最大值, 然后减小. 通过电子态密度、电荷布居数和电子差分密度分布图的研究分析可知:在低压区域(0< P< 9.7 GPa), 带隙的变大主要是由于原子间距离的减小造成的共价性增强和Ge原子随压强的变大局域性增强引起的; 在高压区域(P>9.7 GPa), 则是出现了离域现象, 诱发了离域电子的产生, 从而使带隙减小.     

工作压强对射频辉光放电H2/C4H8等离子状态的影响

利用辉光放电技术采用等离子体质谱诊断的方法研究了不同工作 压强下H₂/C₄H₈混合气体等离子体中 主要正离子成分及其能量的变化规律, 并分析了压强对H₂/C₄H₈混合气体的离解机理以及主要正离子形成过程的影响. 结果表明: 随着工作压强的增加, 碳氢碎片离子的浓度和能量均逐渐减小. 当工作压强为5 Pa时, H₂/C₄H₈混合气体等离子体中C₃H₅⁺相对浓度最大; 压强为10 Pa时, C₃H₃⁺相对浓度最大; 压强为15, 20 Pa时, C₂H₅⁺相对浓度最大; 压强为25 Pa时, C₄H₉⁺相对浓度最大. 对H₂/C₄H₈等离子体中的主要组分及其能量分布所进行的定性分析, 将为H₂/C₄H₈混合气体辉光放电聚合物涂层的工艺参数优化提供参考技术基础. 关键词： 辉光放电技术 等离子体质谱诊断 工作压强     

第一性原理计算Mo浓度对Mo掺杂BiVO4光催化性能的影响

本文利用基于密度泛函理论的第一性原理研究了不同浓度的Mo掺杂BiVO₄的V位的电子结构、光学性质和光催化性能.缺陷形成能的计算结果说明BiMo_xV_1-xO₄(x=0.0625, 0.125, 0.25)三种掺杂体系都是可以稳定存在的.电子结构计算结果表明：BiMo_xV_1-xO₄(x=0, 0.0625, 0.125, 0.25)四种体系的带隙分别为2.123 eV,2.142 eV,2.160 eV和2.213 eV.掺杂BiVO₄体系的带隙值均大于本征BiVO₄,且带隙随着Mo浓度的增加而增大. BiMo_xV_1-xO₄(x=0.0625, 0.125, 0.25)三种掺杂体系的能带结构全部向低能量区域移动,导致掺杂体系导带底越过费米能级,Mo掺杂BiVO₄后具...     

高压下BaHfO3电子结构与光学性质的第一性原理研究

从第一性原理出发,在局域密度近似下,采用基于密度泛函理论的平面波超软赝势计算方法系统地研究了高压对BaHfO₃电子结构与光学性质的影响.能带结构分析表明;无压强和施加正压强作用时,BaHfO₃为直接带隙绝缘体,而施加负压强时,BaHfO₃则转变为间接带隙半导体;BaHfO₃的带隙随压强增加而减小,且具有明显的非线性关系.对光学性质的分析发现:施加正压强后,光学吸收带边产生蓝移;负压强作用时介电函数虚部尖峰减少,光学吸收带边产生红移;施加压强后BaHfO₃的静态介电常数和静态折射率均增大.上述研究表明施加高压有效调制了BaHfO₃的电子结构和光学性质,计算结果为BaHfO₃光电材料的设计与应用提供了理论依据.     

α-Mg3Sb2的电子结构和力学性能

运用第一性原理研究了Mg-Sb合金中典型沉淀相α-Mg₃Sb₂的几何、电子结构和力学性能.结构优化得到的晶格常数和形成能与实验值符合很好.电子结构分析表明,具有半导体性质的α-Mg₃Sb₂带隙为0.303 eV,是间接带隙半导体.通过计算得到了α-Mg₃Sb₂的弹性常数,进而得到模量、泊松比等力学参数,对力学参数进行分析发现,α-Mg₃Sb₂有很好的延展性而塑性相对较差.通过对α-Mg₃Sb₂施加应变前后态密度的变化分析,发现对于六角结构的α-Mg₃Sb₂,与剪切模量相关的C₁₁+C₁₂,C₃₃/2和与体模量相关的C₁₁+C₁₂+2C₁₃+C₃₃/2对体积变化不保守,而（C₁₁-C₁₂）/4和C₄₄对体积变化保守. 关键词： 3Sb₂')" href="#">α-Mg₃Sb₂ 第一性原理 电子结构 力学性能     

高压下Y-Si-H体系晶体结构和超导性质的第一性原理研究

采用第一性原理计算方法,研究了三元氢化物Y-Si-H体系在高压下的晶体结构、电子性质及超导性质,发现了热力学稳定的YSiH₇、YSiH₉、YSi₂H₁₂和YSiH₁₈,以及热力学亚稳的YSi₂H₁₃、YSi₂H₁₄和Y₂SiH₁₇。电子性质计算表明,YSiH7为绝缘体,YSi₂H₁₃为半导体,其余氢化物均具有金属特性。通过麦克米兰方程估算超导转变温度(T_c)发现,YSi₂H₁₂具有最高的T_c,在100 GPa下为43.5 K。YSi₂H₁₄的动力学稳定压力可降至40 GPa,T_c为23.8 K,是Y-Si二元化合物中最高T_c的2倍,...     

烷烃混合气体的太赫兹光谱分析

太赫兹时域光谱技术(THz-TDS)是近十多年发展起来的一种新的远红外光谱技术,在气体研究方面有了一定进展,尤其是对极性气体,而对非极性气体研究较少。本文以干馏气、天然气以及各种沼气的主要成分CH₄, C₂H₆和C₃H₈气体(非极性气体)为研究对象,首先对CH₄,C₂H₆和C₃H₈三种纯气进行测量,利用THz-TDS技术得到其太赫兹频域谱和相位谱,然后将其以不同比例、不同种类混合成二元气体,进一步研究混合气体的频域谱和相位谱。实验结果表明CH₄,C₂H₆对太赫兹波的吸收很小而C₃H₈对太赫兹波有一定的吸收,这与C₃H₈极性增强的物理特性相符合。为了实现对烷烃混合气体的压强和各成分浓度的定量分析,本文利用BP人工神经网络法对上述二元混合体系的太赫兹频域谱进行分析,对训练集和预测集分别计算了混合气体的压强和各成分浓度的预测值与实际值的相关系数,训练集和预测集的相关系数取值分别为0.994～0.999和0.981～0.993。研究表明,利用太赫兹时域光谱技术结合BP人工神经网络数学方法可以实现对烷烃混合气体的压强和各成分浓度的定量分析,使THz-TDS技术在气体领域研究范围更加广阔。     

C轴压力下ZnO晶体结构及电子性质的第一性原理研究

本文采用基于密度泛函理论(DFT)的第一性原理方法对ZnO晶体在c轴取向压力作用下的晶体结构、电子结构的变化进行了研究. 结果表明,当压力在0到6 GPa区间时,晶格参数呈线性变化,带隙随压力增大而增大,显示弹性应变特征;当压力从6 GPa增大到10 GPa的过程中,晶体结构有了较大变化,出现了介于常压下纤锌矿结构和等静压高压下NaCl结构之间的类石墨结构(Graphitelike structure). 伴随着这一结构相变,ZnO的晶格参数,能隙和态密度等电子结构出现了较大跃变.     

C轴压力下ZnO晶体结构及电子性质的第一性原理研究

本文采用基于密度泛函理论(DFT)的第一性原理方法对ZnO晶体在c轴取向压力作用下的晶体结构、电子结构的变化进行了研究.结果表明,当压力在0～6 GPa区间时,晶格参数呈线性变化,带隙随压力增大而增大,显示弹性应变特征;当压力从6 GPa增大到10 GPa的过程中,晶体结构有了较大变化,出现了介于常压下纤锌矿结构和等静压高压下NaCl结构之间的类石墨结构(Graphitelike structure).伴随着这一结构相变,ZnO的晶格参数,能隙和态密度等电子结构出现了较大跃变.     

Structural and electronic properties of carbon nanotubes under hydrostatic pressures

We studied the structural and electronic properties of carbon nanotubes under hydrostatic pressures based on molecular dynamics simulations and first principles band structure calculations. It is found that carbon nanotubes experience a hard-to-soft transition as external pressure increases. The bulk modulus of soft phase is two orders of magnitude smaller than that of hard phase. The band structure calculations show that band gap of (10, 0) nanotube increases with the increase of pressure at low pressures. Above a critical pressure (5.70GPa), band gap of (10, 0) nanotube drops rapidly and becomes zero at 6.62GPa. Moreover, the calculated charge density shows that a large pressure can induce an {sp}²-to-{sp}³ bonding transition, which is confirmed by recent experiments on deformed carbon nanotubes.     

Influence of impurity hydrogen on the structure and properties of bulk Li and pressure effects

The structure and properties of a 16-atom body-centered cubic lithium cell with an interstitial hydrogen atom are studied using a pseudopotential-plane-wave method within the density functional theory at 0 K and high pressures. The host lattice is dramatically distorted by the introduction of H. Although the hydrogen atom is stable at the tetragonal site in perfect bcc host lattice, it favors the octahedral site formed by six non-equivalent Li atoms after full relaxation of the cell, showing P4/mmm symmetry within the pressures ranging from 0 to 6 GPa. The lattice ratio (a/c) changes irregularly with external pressure at about 3 GPa. The hydrogen band lies in the bottom of the valence band, separated by a gap from the metallic bands, illustrating the electronegativity of hydrogen. High reflectivity in the low frequency area induced by the impurity hydrogen is observed when only interband transitions are taken account of. A dip in reflectivity due to parallel band transitions is observed at ∼0.4 eV. Another dip at ∼4.3 eV appears when external pressure increases over 4 GPa.     

Structural and electronic transitions in gadolinium iron borate GdFe<Superscript>3</Superscript>(BO<Superscript>3</Superscript>)<Superscript>4</Superscript> at high pressures

The optical properties and structure of gadolinium iron borate GdFe₃(BO₃)₄ crystals are studied at high pressures produced in diamond-anvil cells. X-ray diffraction data obtained at a pressure of 25.6 GPa reveal a firstorder phase transition retaining the trigonal symmetry and increasing the unit cell volume by 8%. The equation of state is obtained and the compressibility of the crystal is estimated before and after the phase transition. The optical spectra reveal two electronic transitions at pressures ～26 GPa and ～43 GPa. Upon the first transition, the optical gap decreases jumpwise from 3.1 to ～2.25 eV. Upon the second transition at P=43 GPa, the optical gap deceases down to ～0.7 eV, demonstrating a dielectric-semiconductor transition. By using the theoretical model developed for a FeBO₃ crystal and taking into account some structural analogs of these materials, the anomalies of the high-pressure optical spectra are explained.     

高压下MgN8晶体结构理论模拟与物性研究

基于密度泛函理论第一性原理的方法,使用CALYPSO结构搜索技术结合VASP软件,在0~100 GPa压强范围内对MgN8的晶体结构进行预测,并对预测的结构进行系统研究。结果表明:在常压下,空间群为P4/mbm的α-MgN8晶体结构的焓值最低;当压强达到24.3 GPa和68.3 GPa时发生相变,分别相变成空间群为P4/mnc的β-MgN8相和空间群为Cmcm的γ-MgN8相,两次相变均为对应体积坍塌的一级相变。电子性质计算结果表明,α-MgN8相的导带与价带之间具有3.09 eV的带隙,表明该结构具有非金属性;β相和γ相具有明显的金属特征。Bader电荷转移计算表明,随着压力的增加,Mg原子向N原子转移的电荷逐渐增多。     

Periodic density functional theory study of the high‐pressure behavior of crystalline 7,2′‐anhydro‐β‐d‐arabinosylorotidine

In this work, a detailed study of the structural, electronic, and absorption properties of crystalline 7,2′‐anhydro‐β‐d ‐arabinosylorotidine (Cyclo ara‐O) in the pressure range of 0–350 GPa is performed by density functional theory calculations. The detail analysis of the crystal with increasing pressure shows that complex transformations occur in Cyclo ara‐O under compression. In addition, the b‐direction is much stiffer than the a‐ and c‐axis at 0–330 GPa, suggesting that the Cyclo ara‐O crystal is anisotropic in the certain pressure region. In the pressure range of 110–290 GPa, repeated formations and disconnections of covalent bonds in O7–O6* and C3–C6* occur several times, resulting in a new six‐atom ring that forms at 220, 270, and 290 GPa, while a five‐atom ring and seven‐atom ring form between two adjacent molecules at 300 and 340 GPa, respectively. Then, the analysis of the band gap and DOS (PDOS) of Cyclo ara‐O indicates that its electronic character has changed at 300 GPa into an excellent insulator, but the electron transition is much easier at 350 GPa. Moreover, the relatively high optical activity with the pressure increases of Cyclo ara‐O is seen from the absorption spectra, and two obvious structural transformations are also observed at 180 and 230 GPa, respectively. Copyright © 2016 John Wiley & Sons, Ltd.     

New features in the pressure dependence of photoluminescence spectra of C60 at room temperature

We present new results on the pressure dependence of the electronic band gap of molecular C₆₀ measured by photoluminescence spectroscopy up to 10 GPa at room temperature. In agreement with previous results, the energy gap decreases with increasing pressure up to about 6 GPa. For higher pressures, however, we observe an energy gap that is wider than that at 6 GPa.     

Electronic transitions in the VBO<Subscript>3</Subscript> single crystal at high pressures

Optical absorption spectra of single crystals of the ferromagnetic semiconductor VBO₃ are studied at high pressures up to 70 GPa achieved in a diamond-anvil cell. An electronic transition accompanied by sharp changes in the optical parameters and a decrease in the optical gap from E ₀ = 3.02 eV to 2.25 eV is found at the pressure P _C ～ 30 GPa. The gap does not disappear in the high-pressure phase and its value becomes typical of semiconductors. This is indicative of a semiconductor-semiconductor transition. The transition to the metallic state may occur at the critical pressure P _met ≈ 290 GPa.     

Phase Transition and Physical Properties of InS

Using the crystal structure prediction method based on particle swarm optimization algorithm, three phases(P nnm, C2/m and Pm-3 m) for InS are predicted. The new phase Pm-3m of InS under high pressure is firstly reported in the work. The structural features and electronic structure under high pressure of InS are fully investigated. We predicted the stable ground-state structure of InS was the P nnm phase and phase transformation of InS from P nnm phase to P m-3 m phase is firstly found at the pressure of about 29.5 GPa. According to the calculated enthalpies of InS with four structures in the pressure range from 20 GPa to 45 GPa, we find the C2/m phase is a metastable phase. The calculated band gap value of about 2.08 eV for InS with P nnm structure at 0 GPa agrees well with the experimental value. Moreover, the electronic structure suggests that the C2/m and P m-3m phase are metallic phases.