基于AFM的固液界面表面电荷密度测量方法

固液界面的表面电荷会影响微纳流体系统的流体阻力,因此如何测量固液界面的表面电荷密度以及分析表面电荷的产生机理对于研究表面电荷对流体阻力的影响具有较大的意义。提出了一种基于接触式AFM的固液界面表面电荷密度测量方法。基于该方法测量了浸在去离子水和0.01 mol/L的NaCl溶液中的高硼硅玻璃和二氧化硅样本的表面电荷密度,并研究了溶液pH值对表面电荷的影响。研究结果表明高硼硅玻璃和二氧化硅由于表面硅烷基的电离带负电。溶液pH值和离子浓度的增加都会增加浸在去离子水和0.01 mol/L的NaCl溶液中高硼硅玻璃和二氧化硅的表面电荷密度的绝对值。     

Equilibrium equation of small-size phases and some its applications

The equilibrium equation of small-size phases for a one-component system, taking into account the size dependences of the pressure, temperature, and interface energy at the phase boundaries in the highly dispersed state, is presented. It is shown that the phase-transition and ternary-point temperatures decrease with a decrease in the particle size. Expressions are derived, which relate the surface tensions at the solid-vapor and solid-liquid interfaces (which are difficult to experimentally determine) to the liquid-vapor surface tension and other physical quantities, which can be experimentally determined with high accuracy. There is satisfactory agreement between the obtained results and experimental data.     

Creation of nanohillocks on CaF2 surfaces by single slow highly charged ions

Upon impact on a solid surface, the potential energy stored in slow highly charged ions is primarily deposited into the electronic system of the target. By decelerating the projectile ions to kinetic energies as low as 150 x q eV, we find first unambiguous experimental evidence that potential energy alone is sufficient to cause permanent nanosized hillocks on the (111) surface of a CaF(2) single crystal. Our investigations reveal a surprisingly sharp and well-defined threshold of potential energy for hillock formation which can be linked to a solid-liquid phase transition.     

真空中固液界面的离子束分析研究

原位实时地高精度测量固液界面的元素或离子(电荷)组成和动态变化对于界面反应和相互作用研究非常重要,但是传统的高分辨离子束分析实验在真空环境中不能直接测量液体样品。本文研制了一种固体-液体界面探针,该探针使用氮化硅-铝纳米复合膜作为真空密封窗和电化学电极,利用复旦大学核微探针成功开展了真空中固体-液体界面探针0.01 mol/L氯化钡和1 mol/L氯化镧溶液样品固体-液体界面的卢瑟福背散射(RBS)分析和粒子激发X射线(PIXE)分析。实验结果表明,真空环境下,固液界面探针纳米薄窗可承受2 MeV He+离子注量为1.0×1018 ions/cm2的辐照。微区PIXE分析成功获得了固液界面探针结构的元素分布。通过对卢瑟福背散射能谱进行分析,获取了20 nm分辨的电极界面微米深溶液中的La, Cl元素浓度。在1 mol/L的LaCl3固液界面电极表面,负电压(–2.3 V)时电解质离子在电极表面高浓度聚集,正电压(+2.3 V)时电解质在电极表面呈低浓度分布,在约1 250 nm深处电解质溶液趋向于体浓度。     

Nanoscale depth-resolved cathodoluminescence spectroscopy of ZnO surfaces and metal interfaces

The electronic properties of ZnO surfaces and interfaces has until recently been relatively unexplored. We have used a complement of ultrahigh vacuum scanning electron microscope (SEM)-based, depth-resolved cathodoluminescence spectroscopy (DRCLS), temperature-dependent charge transport, trap spectroscopy, and surface science techniques to probe the electronic and chemical properties of clean surfaces and interfaces on a nanometer scale. DRCLS reveals remarkable nanoscale correlations of native point defect distributions with surface and sub-surface defects calibrated with capacitance trap spectroscopies, atomic force microscopy, and Kelvin probe force microscopy. The measurement of these near-surface states associated with native point defects in the ZnO bulk and those induced by interface chemical bonding is a powerful extension of cathodoluminescence spectroscopy that provides a guide to understanding and controlling ZnO electronic contacts.     

A stochastic model for solidification

A 3-dimensional (2-space, 1-time) model relating the diffusion of heat and mass to the kinetic processes at the solid-liquid interface, using a stochastic approach is presented in this paper. This paper is divided in two parts. In the first part the basic set of equations describing solidification alongwith their analysis and solution are given. The process of solidification has a stochastic character and depends on the net probability of transfer of atoms from liquid to the solid phase. This has been modeled by a Markov process in which knowledge of the parameters at the initial time only is needed to evaluate the time evolution of the system. Solidification process is expressed in terms of four coupled equations, namely, the diffusion equations for heat and mass, the equations for concentration of the solid phase and for rate of growth of the solid-liquid interface. The position of the solid-liquid interface is represented with the help of a delta function and it is defined as the surface at which latent heat is evolved. A numerical method is used to solve the equations appearing in the model. In the second part the results i.e. the time evolution of the solid-liquid interface shape and its concentration, rate of growth and temperature are given.     

Effect of contact line curvature on solid-fluid surface tensions without line tension

For sessile droplets partially wetting a solid surface, it has been observed experimentally that the value of the contact angle depends on the contact line curvature and this dependence has been attributed to tension in the contact line. But previous analyses of these observations have neglected adsorption at the solid-liquid interface and its effect on the surface tension of this interface. We show that if this adsorption is taken into account the relation between the contact angle and contact line curvature is completely accounted for without introducing line tension. Further, from the observed relation between the contact angle and contact line curvature, the adsorption at the solid-liquid interface can be determined, as can the surface tensions of the solid-liquid and solid-vapor interfaces.     

固液黏着功的Berthelot平均规则的推广及应用

以固液黏着功的Berthelot几何平均规则及其推广为基础的Zisman方程、Fowkes方程和Owens-Wendt方程是固体表面张力测定的基础.对Berthelot几何平均规则进行了进一步的推广,并以此为基础,对Zisman方程中的参数给出了推广的表示式,并对Fowkes方程和Owens-Wendt方程进行了进一步的推广. 关键词： 接触角 Berthelot规则 Fowkes方程 Owens-Wendt方程     

Solvent effects on catalytic reactions and related phenomena at liquid-solid interfaces

Catalytic reactions involve the direct interaction of reactants, intermediates and products with the catalyst surface. We not only need to control the atomic structure and electronic properties of the active site, but also explore the multiple molecular interactions that occur beyond the active site; they play an essential role in altering the binding and reactivity of surface species. In liquid-phase catalysis, solvents provide additional degrees of freedom in the design of the catalytic process for desirable activity and selectivity. The multi-faceted effects of solvents have a profound impact on the catalyst performance by restricting the mass transfer to the site, tuning the chemical potential of the surface species, competing for active sites, stabilizing the initial and transition states, and causing mechanistic changes by participating in the kinetically relevant elementary steps. This review addresses the different aspects of solvent effects, using a few prototype solid-liquid interfaces to illustrate these fundamental features. Recent experimental and computational studies that provide new insight at the molecular level are examined. Solvent structures in the proximity of the catalyst surface are discussed along with their influence in molecular binding and reaction at the solid-liquid interfaces. Furthermore, opportunities to alter such a solid-liquid interaction by tuning the wettability of the catalyst surfaces are explored.     

Interfaces between Al2O3 and beta-Ni(1-x)Al(x) alloys: complex structures and Ab initio thermodynamics

A methodology to study the structural stability of binary alloy/Al2O3 interfaces is developed by expanding the conventional ab initio thermodynamics to include the dependence on alloy composition. Results on beta-Ni(1-x)Al(x)/Al2O3 interfaces predict the existence of two types of stable interfaces. The stable interface at equilibrium with Al-rich or strictly 1:1 alloy contains an Al2-terminated Al2O3 surface and continues with NiAl layers, and the interface at equilibrium with Ni-rich alloy has Al accumulation but continues with a Ni-rich and then NiAl layers. Works of separation for the two interfaces are close to each other.     

Elementary processes at semiconductor/electrolyte interfaces: perspectives and limits of electron spectroscopy

Semiconductor device properties based on electrolyte contacts or modified by electrochemical reactions are dominated by the electronic structure of the interface. Electron spectroscopy as e.g. photoemission is the most appropriate surface science techniques to investigate elementary processes at semiconductor/electrolyte interfaces. For such investigations a specific experimental set-up (SoLiAS) has been built-up which allows performing model experiments as well as surface analysis after emersion under different experimental conditions. The experimental approach is presented by a number of experiments performed during the last years with GaAs as substrate material. Model experiments by adsorption and coadsorption of electrolyte species give information on fundamental aspects of semiconductor/electrolyte interactions. Emersion experiments give information on a final composition and the related electronic structure of electrodes after electrochemical reactions. The use of frozen electrolytes will help to bridge the gap between these two approaches. With the combination of the experimental procedures one may expect a detailed analysis of electrolyte (modified) interfaces covering chemical composition, electronic structure of surfaces/interfaces as well as surface/interface potentials.     

Phonon scattering at siliconcrystal surfaces

Our observations of the reflection or backscattering of high-frequency phonons (v =280 GHz to 1 THz) at silicon-solid interfaces disagree significantly with predictions from the acoustic mismatch model. Interfaces composed of materials theoretically wellmatched, show high scattering experimentally. In contrast, interfaces theoretically poorly matched, show less phonon scattering than expected. Generally, this is best expressed by the fact that the interface scattering ranges from roughly 30–60% for different phonon modes with little dependence on the material covering the silicon crystal and different techniques of interface preparations. Thus, our experiments indicate that the well-known Kapitza anomaly of the phonon scattering at solid-liquid helium interfaces is not a special case; the same anomaly appears to be present at all tested interfaces. Our experiments are compared with detailed calculations which either assume pure specular or pure diffusive scattering. In these calculations the influence of the crystal anisotropy for the phonon propagation (phonon focussing) is included. This comparison shows, especially for the free silicon surface, that phonons are completely diffuse scattered. Hence, the acoustic mismatched model relying on specular reflection cannot be applied to the real silicon interface. The frequency dependence of phonon scattering at a free silicon interface indicates the existence of at least two different diffusive scattering mechanisms. Within our experimental limits in these two scattering processes the phonons are elastically scattered.     

In-situ optical spectroscopy and electronic properties of pyrrole sub-monolayers on Ga-rich GaAs(001)

We report on the characterization of sub-monolayers of pyrrole adsorbed on Ga-rich GaAs(001) surfaces. The interfaces were characterized by scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) and reflectance anisotropy spectroscopy (RAS) in a spectral range between 1.5 and 8 eV. The adsorption of pyrrole on Ga-rich GaAs(001) modifies the RAS spectrum of the clean GaAs surface significantly at the surface transitions at 2.2 and 3.5 eV indicating a chemisorption of the molecules. By the help of transients at these surface transitions during the adsorption process, we were able to prepare different molecular coverages from a sub-monolayer up to a complete molecular layer. The different coverages of pyrrole were imaged by STM and electronically characterized by STS. The measurements reveal that the adsorbed molecules electronically insulate the surface and indicate the formation of new interface states around −3.5 and +4.2 eV. The RAS measurements in the UV region show new anisotropies in the spectral range of the optical transitions of the adsorbed pyrrole molecules. Our measurements demonstrate the potential of optical and electronic spectroscopy methods for the characterization of atomically thin molecular layers on semiconductor surfaces allowing a direct access to the properties of single adsorbed molecules.     

Modeling diffusion of adsorbed polymer with explicit solvent

Computer simulations of a polymer chain of length N strongly adsorbed at the solid-liquid interface in the presence of explicit solvent are used to delineate the factors affecting the N dependence of the polymer lateral diffusion coefficient, D(||). We find that surface roughness has a large influence, and D(||) scales as D(||) approximately N(-x), with x approximately 3/4 and x approximately 1 for ideal smooth and corrugated surfaces, respectively. The first result is consistent with the hydrodynamics of a "particle" of radius of gyration R(G) approximately N(nu) (nu=0.75) translating parallel to a planar interface, while the second implies that the friction of the adsorbed chains dominates. These results are discussed in the context of recent measurements.     

Proposal of a one-dimensional electron gas in the steps at the LaAlO3-SrTiO3 interface

The two-dimensional electron gas at the interface between LaAlO(3) and SrTiO(3) has become one of the most fascinating and highly debated oxide systems of recent times. Here we propose that a one-dimensional electron gas can be engineered at the step edges of the LaAlO(3)/SrTiO(3) interface. These predictions are supported by first-principles calculations and electrostatic modeling which elucidate the origin of the one-dimensional electron gas as an electronic reconstruction to compensate a net surface charge in the step edge. The results suggest a novel route to increasing the functional density in these electronic interfaces.     

The growth and modification of materials via ion–surface processing

A wide variety of gas phase ions with kinetic energies from 1–10⁷ eV increasingly are being used for the growth and modification of state-of-the-art material interfaces. Ions can be used to deposit thin films; expose fresh interfaces by sputtering; grow mixed interface layers from ions, ambient neutrals, and/or surface atoms; modify the phases of interfaces; dope trace elements into interface regions; impart specific chemical functionalities to a surface; toughen materials; and create micron- and nanometer-scale interface structures. Several examples are developed which demonstrate the variety of technologically important interface modification that is possible with gas phase ions. These examples have been selected to demonstrate how the choice of the ion and its kinetic energy controls modification and deposition for several different materials. Examples are drawn from experiments, computer simulations, fundamental research, and active technological applications. Finally, a list of research areas is provided for which ion–surface modification promises considerable scientific and technological advances in the new millennium.     

Electronic States in Quantum Wells with Interface Defects

Effects of ilr terface defects on electronic states in quan tum wells (Q Ws) are investigated theoretically by introducing a coordinate transformation that transforms QWs with defective interfaces to those with planar interfaces plus an effective potential associated with interface defects. The interface defects are idealized as a cylindrical hollow protruding into the barrier materials on one of the interfaces. Electronic ground state energies are calculated variationally aa functions of the defect lateral sizes. For GaA8-Ga_1-zAl_zAs Q WS with the well width d less than 150 Å, the changes in electronic energies due to interface defects will produce sizable effects on optical experiments, such as broadenings of excitation spectra of Q We. But our calculation predicts smaller spectrum broadenings than those predicated by the previous theory for the same interface disorder.     

Device Physics Modeling of Surfaces and Interfaces from an Induced Gap State Perspective

An overview of a device physics formulation of induced gap state (IGS) modeling is presented. IGS modeling attempts to explain the electronic properties of metal (M), semiconductor (S), or insulator (I) surfaces and interfaces in terms of intrinsic behavior associated with evanescent states arising from the termination of a bulk material at a surface or interface. Specifically, semiconductor and insulator surfaces as well as metal-semiconductor (MS), semiconductor-semiconductor (SS), insulator-insulator (II), insulator-semiconductor (IS), metal-metal (MM), metal-insulator-metal (MIM), and metal-insulator-semiconductor (MIS) interfaces are considered. Key aspects of this review involve the development of the electrostatic foundations of IGS modeling and the utilization of equivalent circuits and energy band diagrams to elucidate surface and interface electronic behavior.     

Stress-driven phase transformation and the roughening of solid-solid interfaces

The application of stress to multiphase solid-liquid systems often results in morphological instabilities. Here we propose a solid-solid phase transformation model for roughening instability in the interface between two porous materials with different porosities under normal compression stresses. This instability is triggered by a finite jump in the free energy density across the interface, and it leads to the formation of fingerlike structures aligned with the principal direction of compaction. The model is proposed as an explanation for the roughening of stylolites-irregular interfaces associated with the compaction of sedimentary rocks that fluctuate about a plane perpendicular to the principal direction of compaction.