RyMxC04-xSb12化合物的晶格热导率

系统地研究了离子半径不同的Ba,Ce,Y作为填充原子及Fe,M作为置换原子对填充化合物RyMxCo4-xSb12晶格热导率的影响规律.结果表明在skutterudite结构的Sb组成的20面体空洞中,Ba,Ce,Y的填充原子能显著降低其晶格热导率,且晶格热导率降低幅度按Ba,Ce,Y离子半径减小的顺序而增大.Sb组成的20面体空洞部分被Ba,Ce填充时,晶格热导率最小,填充原子的扰动对声子的散射作用最强.在Co位置上Fe和M的置换,能显著地降低RyMxC2o4-xSb12化合物的晶格热导率,与Fe比,M对晶格热导率的影响更强.     

Mo2C二维材料晶格热导率的第一性原理研究

Mo₂C是构建Mxene基器件的重要材料之一,对Mo₂C二维材料声子输运的理解非常必要.文章结合第一性原理方法和声子玻尔兹曼输运方程,研究了二维Mo₂C材料的晶格热导率.研究表明,室温下二维Mo₂C导热系数非常低,其锯齿方向和扶手椅方向的晶格热导率分别为7.20和5.04 W/mK.计算了声学振动和光学振动模式对晶格热导率的贡献,揭示总热导率主要由面内声学横波的振动模式所贡献.还进一步计算了声子群速度、声子弛豫时间、三声子散射空间和模式格林艾森参数,发现二维Mo₂C中的声子群速度和声子弛豫时间对晶格传输有重要的影响.     

二维Mo2C的晶格热导率的第一性原理研究

Mo2C是构建Mxene基器件的重要材料之一,对Mo2C二维材料声子输运的理解非常必要。文章结合第一性原理方法和声子玻尔兹曼输运方程,研究了二维Mo2C材料的晶格热导率。研究表明,室温下二维Mo2C导热系数非常低,其锯齿方向和扶手椅方向的晶格热导率分别为7.20 和 5.04 W/mK。计算了声学振动和光学振动模式对晶格热导率的贡献,揭示总热导率主要由面内声学横波的振动模式所贡献。还进一步计算了声子群速度、声子弛豫时间、三声子散射空间和模式格林艾森参数,发现二维Mo2C中的声子群速度和声子弛豫时间对晶格传输有重要的影响。     

耦合共振在材料科学中的应用

通过对材料点、线、面等几类不同缺陷的电子结构和声子激发研究的回顾，特别是对它们的声子激发及其局域振动模式分析，给出了材料缺陷导致的材料局域振动模式的微观图像；分析了多原子分子所具有的高频局域振动态以及采用超声或激光方法激发获得长寿命局域振动的基本原理；提出了一种能够利用耦合共振原理进行材料缺陷局域原子结构非接触调整的方法     

RyMxCO4-xSb12化合物的晶格热导率

系统地研究了离子半径不同的Ba，Ce，Y作为填充原子及Fe，Ni作为置换原子对填充化合物RyMxCO4-xSb12晶格热导率的影响规律．结果表明：在skunemdite结构的sb组成的20面体空洞中，Ba，Ce，Y的填充原子能显著降低其晶格热导率，且晶格热导率降低幅度按Ba，Ce，Y离子半径减小的顺序而增大．Sb组成的20面体空洞部分被Ba，Ce填充时，晶格热导率最小，填充原子的扰动对声子的散射作用最强．在Co位置上Fe和Ni的置换，能显著地降低RyMxCO4-xSb12化合物的晶格热导率，与Fe相比，Ni对晶格热导率的影响更强．     

孔洞缺陷对二维石墨烯/氮化硼横向异质结热传导的调控

本文采用孔洞缺陷来实现对二维石墨烯/氮化硼横向异质结热导率的调控.平衡态分子动力学(EMD)计算结果表明,界面孔洞的引入会降低二维石墨烯/氮化硼横向异质结的热导率.相较于有序的孔洞分布,无序的孔洞分布能够更有效地降低异质结的热导率,这一现象可通过声子安德森局域化来解释.孔洞缺陷的存在导致声子的频率和波失发生变化,从而使声子散射变得更加频繁,孔洞随机分布时,则导致声子波在材料中发生多次反射和散射,最终形成局域振动模式.本研究揭示了孔洞缺陷降低二维石墨烯/氮化硼横向异质结热导率的物理机制,对二维热电材料的结构设计有一定的指导意义.     

内嵌不同形状散射子的局域共振型黏弹性覆盖层低频吸声性能研究

最近研究表明,将声子晶体中的局域共振现象引入到水下吸声材料的设计中,可以观察到由局域共振引起的低频声吸收现象.为了进一步揭示局域共振低频吸声机理并获得更优的水下低频声吸收性能,研究了内嵌不同形状散射子的黏弹性声学覆盖层.利用晶格和散射子在空间排布的对称性,传统有限元方法得到简化,从而节约了计算时间和存储空间,并通过将简化有限元法计算得到的结果与传统有限元法计算的结果进行对比,验证了简化有限元方法的正确性.结合位移云纹图,考察了特定频率点上振动模态与相应的局域共振吸声峰之间的关系,揭示了内嵌圆柱形散射子的黏弹性覆盖层的吸声机理.进一步讨论了相同体积下不同形状的圆柱形散射子对黏弹性覆盖层吸声性能的影响,给出了提升覆盖层低频吸声性能的优化思路.通过讨论不同芯体材质对内嵌圆柱形散射子的黏弹性覆盖层吸声性能的影响,找到了改变第一共振峰位置的方法,从而可以通过调整第一共振峰来实现特定频率范围内的宽带吸声.     

纳米晶锐钛矿相TiO2的非简谐效应和声子局域

对晶粒尺寸为19.4,8.6和5.6 nm的纳米晶锐钛矿相TiO2,进行了从83到723 K的变温拉曼散射测量,并对Eg(1)模式进行了详细研究.根据非简谐效应和声子局域模型,对Eg(1)拉曼峰进行了拟合与计算.结果表明,以上三种纳米晶粒的晶格振动机理,在本质上是相同的.三声子过程对频率蓝移起主要作用.为了得到很好的拟合,需要同时考虑三声子和四声子过程.随着温度的升高,四声子过程增强,并对三声子过程起抵消作用.与非简谐衰减相关的声子寿命随着晶粒尺寸的减小而增加,晶粒尺寸越小衰减越慢.在低温区,声子局域是导致5.6 nm晶粒的声子寿命非常短的原因.声子局域引起Eg(1)模式在高波数段非对称展宽和频率蓝移,其对Eg(1)峰展宽的影响要大于对峰位移动的影响.     

硅纳米线晶格热导率的理论分析

考虑空间尺度对声子群速度的影响,采用Callaway热导率模型计算了单晶硅纳米线的晶格热导率,讨论了三声子Umklapp过程、电子-声子散射、缺陷-声子散射以及边界-声子散射对热导率的影响.结果表明,纳米线的热导率比体材料小一个数量级,与不考虑受限声子群速度的结果相比,和实验符合得更好.另外,边界散射使得高温区的热导率体现出与温度几乎无关的特性.     

基于界面原子混合的材料导热性能

构造了界面具有原子混合的硅锗(Si/Ge)单界面和超晶格结构.采用非平衡分子动力学模拟研究了界面原子混合对于单界面和超晶格结构热导率的影响,重点研究了界面原子混合层数、环境温度、体系总长以及周期长度对不同晶格结构热导率的影响.结果表明:由于声子的“桥接”机制,2层和4层界面原子混合能提高单一界面和少周期数的超晶格的热导率,但是在多周期体系中,具有原子混合时的热导率要低于完美界面时的热导率;界面原子混合会破坏超晶格中声子的相干性输运,一定程度引起热导率降低;完美界面超晶格具有明显的温度效应,而具有原子混合的超晶格热导率对温度的敏感性较低.     

Thermoelectric properties of SnzCo8Sb24 skutterudites

Sn-filled CoSb₃ skutterudite compounds were synthesized by the induction melting process. Formation of a single δ-phase of the synthesized materials was confirmed by X-ray diffraction analysis. The temperature dependences of the Seebeck coefficient, electrical resistivity and thermal conductivity were examined in the temperature range of 300-700 K. Positive Seebeck and Hall coefficients confirmed p-type conductivity. Electrical resistivity increased with increasing temperature, which shows that the Sn-filled CoSb₃ skutterudite is a degenerate semiconductor. The thermal conductivity was reduced by Sn-filling because the filler atoms acted as phonon scattering centers in the skutterudite lattice. The lowest thermal conductivity was achieved in the composition of Sn_0.25Co₈Sb₂₄.     

Lattice dynamics in ferromagnetic invar alloys

The lattice dynamical properties of the Invar alloys Fe₆₅Ni₃₅ and Fe₇₂Pt₂₈ are discussed. The experiments on the lattice vibration by inelastic neutron scattering have shown an apparent correlation of phonon anomalies with the ferromagnetic long range order. The elastic softening below the Curie temperature is attributed to the dynamical aspects, at least for the [ςς0]TA₁ mode. The lattice dynamical features are derived from the electronic structure of the Invar alloys. They are consistent with the theoretical model that Invar characters are closely related to the detailed band structure of the d electrons near the Fermi level. The present studies indicate significant contributions of phonon anomalies to the Invar problem.     

Mn掺杂后三元黄铜矿结构半导体CuInTe2的缺陷特征与热电性能

三元黄铜矿结构(也称类金刚石结构)半导体是一类具有热电转换潜力的新型热电材料. 本次工作中采用电负性更小的Mn元素替换CuInTe₂黄铜矿结构半导体中的Cu元素, 设计制备贫Cu化合物Cu_1-xInMn_xTe₂. 研究表明, 当Mn含量较低时, Mn优先占位在In 位置产生受主缺陷Mn_In^-. 因此随着Mn含量的增大, 载流子浓度和电导率均得到改善. 但当Mn含量进一步增大后, Mn可同时占位在In位置和Cu位置, 除产生受主缺陷Mn_In^-外, 还能产生施主缺陷Mn_Cu⁺. 由于两类极性相反的缺陷之间的湮灭现象, 使得缺陷浓度及载流子浓度开始降低, 晶格结构畸变有变小趋势, 因此在高温下晶格热导率仅略有提高. 研究结果表明, 在某一特定的Mn含量(x=0.05)时, 材料具有最优的热电性能(ZT=0.84@810.0 K), 这一性能约是未掺杂CuInTe₂的2倍.     

Ga掺杂对Cu_3SbSe_4热电性能的影响

采用熔融-淬火方法制备了Cu_(2.95)Ga_xSb_(1-x)Se_4(x=0,0.01,0.02和0.04)样品,系统地研究了Ga在Sb位掺杂对Cu_3SbSe_4热电性能的影响.研究结果表明,少量的Ga掺杂(x=0.01)可以有效提高空穴浓度,抑制本征激发,改善样品的电输运性能.掺Ga样品在625 K时功率因子达到最大值10μW/cm·K~2,比未掺Ga的Cu_(2.95)SbSe_4样品提高了约一倍.但是随着Ga掺杂浓度的进一步提高,缺陷对载流子的散射增强,同时载流子有效质量增大,导致载流子迁移率急剧下降.因此Ga含量增加反而使样品的电性能恶化.在热输运方面,Ga掺杂可以有效降低双极扩散对热导率的贡献,同时掺杂引入的点缺陷对高频声子有较强的散射作用,因此高温区的热导率明显降低.最终该体系在664 K时获得最大ZT值0.53,比未掺Ga的样品提高了近50%.     

Low temperature specific heat and thermal conductivity of bulk metallic glass (Cu50Zr50)94Al6

The low temperature specific heat and thermal conductivity of (Cu₅₀Zr₅₀)₉₄Al₆ bulk metallic glass have been studied experimentally. A low temperature anomaly in the specific heat is observed in this alloy. It is also found that in addition to Debye oscillators, the localized vibration modes whose vibration density of state has a Gaussian distribution should be considered to explain the low temperature phonon specific heat anomaly. The phonon thermal conductivity dependence on temperature for the sample does not show apparent plateau characteristics as other glass materials do; however, the influence of the resonant scattering from the localized modes on the lattice thermal conductivity is prominent in the bulk metallic glass at low temperatures.     

Effect of phonon scattering mechanisms on the lattice thermal conductivity of skutterudite-related compound

We have prepared the skutterudite-related compounds FeCo_3Sb_{12} and La_{0.75}Fe_3CoSb_{12} with different average grain sizes (about 0.8 and 3.9μm) by hot pressing. Samples were characterized by XRD, EPMA and SEM. The lattice thermal conductivity was investigated in the temperature range from room temperature to 200℃. Based on the Debye model, we analyse the change in lattice thermal conductivity due to various phonon scattering mechanisms by examining the relationship between the weighted phonon relaxation time τ(ω/ω_D)^2 and the reduced phonon frequency ω/ω_D. The effect of grain boundary scattering to phonon is negligible within the range of grain sizes considered in this study. The large reduction in lattice thermal conductivity of FeCo_3Sb_{12} compound contributes to the electron－phonon scattering. As for La_{0.75}Fe_3CoSb_{12} compound, the atoms of La filled into the large voids in the structure of the skutterudite produce more significant electron－phonon scattering as well as more substitute of Fe at Co site at the same time. Moreover, the point-defect scattering appears due to the difference between the atoms of La and the void. In addition, the scattering by the rattling of the rare-earth atoms in the void is another major contribution to the reduced lattice thermal conductivity. Introducing the coupling of the electron－phonon scattering with the point-defect scattering and the scattering by the rattling of the rare-earth atom is an effective method to reduce the lattice thermal conductivity of the skutterudite-related compounds by substitution of Fe for Co and the atoms of La filled in the large voids in the skutterudite structure.     

纳米晶锐钛矿相TiO2的非简谐效应和声子局域

对晶粒尺寸为194,86和56nm的纳米晶锐钛矿相TiO₂,进行了从83到723K的变温拉曼散射测量,并对E_g(1)模式进行了详细研究.根据非简谐效应和声子局域模型,对E_g(1)拉曼峰进行了拟合与计算.结果表明,以上三种纳米晶粒的晶格振动机理,在本质上是相同的.三声子过程对频率蓝移起主要作用.为了得到很好的拟合,需要同时考虑三声子和四声子过程.随着温度的升高,四声子过程增强,并对三声子过程起抵消作用.与非简谐衰减相关的声子寿命随着晶粒 关键词： 2')" href="#">纳米晶TiO₂ 拉曼散射 非简谐耦合 声子局域     

正交相Fe2(MoO4)3的制备与表征及其负膨胀行为的第一性原理研究

采用水热合成法制备出Fe₂(MoO₄)₃样品, 并用高温X-射线衍射、热重和差示扫描量热同步热分析仪对其进行表征, 发现样品在510 ℃附近发生低温单斜相和高温正交相之间的可逆相变, 且正交相表现出负膨胀特征. 采用第一性原理计算了正交相Fe₂(MoO₄)₃ 的原子、电子结构以及声子谱、声子态密度, 并和可获得的实验结果进行了系统的比较. 结果显示正交相Fe₂(MoO₄)₃中MoO₄四面体较之FeO₆八面体具有更强的刚性. 发现最低频的光学支处具有最负的格林乃森(Grüneisen)系数, MoO₄四面体和FeO₆ 八面体相连的桥氧原子的横向振动、FeO₆八面体柔性扭曲转动以及MoO₄四面体的刚性翻转共同导致了Fe₂(MoO₄)₃负膨胀现象的发生.     

Ca2+掺杂对CdO多晶热电性能的影响

以CaCO₃作为Ca²⁺源, 利用传统固相烧结法制备了Cd_1-xCa_xO (x=0, 0.01, 0.03, 0.05) 多晶块体样品并研究了Ca²⁺掺杂对CdO高温热电性能的影响. CaCO₃的掺入会导致CdO多晶载流子浓度降低, 使Cd_1-xCa_xO的电阻率ρ和塞贝克系数的绝对值|S|增大、电子热导率κ_e减小. 同时, 在CdO中掺入CaCO₃会引入点缺陷和气孔并可抑制CdO晶粒长大、晶界增多, 从而增加了对声子的散射, 使样品的声子热导率κ_p减小. 由于总热导率的大幅降低, Cd_0.99Ca_0.01O多晶样品在1000 K时的热电优值ZT可达0.42, 比本征CdO提高了约27%, 为迄今n型氧化物热电材料报道的最好结果之一.     

Thermal transport in twisted few-layer graphene

Twisted graphene possesses unique electronic properties and applications, which have been studied extensively. Recently, the phonon properties of twisted graphene have received a great deal of attention. To the best of our knowledge,thermal transports in twisted graphene have been investigated little to date. Here, we study perpendicular and parallel transports in twisted few-layer graphene(T-FLG). It is found that perpendicular and parallel transports are both sensitive to the rotation angle θ between layers. When θ increases from 0° to 60°, perpendicular thermal conductivity κ_(||) first decreases and then increases, and the transition angle is θ = 30°. For the parallel transport, the relation between thermal conductivity κand θ is complicated, because intra-layer thermal transport is more sensitive to the edge of layer than their stacking forms. However, the dependence of interlayer scattering on θ is similar to that of κ⊥. In addition, the effect of layer number on the thermal transport is discussed. Our results may provide references for designing the devices of thermal insulation and thermal management based on graphene.