用Re/Al2O3/Al隧道结的电子隧道测定重掺杂Re膜的超导能隙

用Re/Al₂O₃/Al隧道结的电子隧道测定了重掺杂Re膜的超导能隙,△₀=(1.04±0.02)meV,2△₀/kT_c=3.31±0.04。△₀值是用电导极大值法确定的。结果表明,杂质使Re膜的T_c与能隙△₀增加了许多倍,但是Re仍然属于弱耦合超导体。 关键词：     

非过渡金属非晶态超导电性的研究

本文中分析了非过渡金属非晶态超导体的超导参量、声子谱参量与霍耳系数之间的经验关系。研究了非晶态超导体的T_c,并得出,声子谱的软化所导致的T_c的提高幅度与电-声子耦合常数λ的提高幅度成线性关系;声子谱的高频截止频率愈高,其T_c也愈高。讨论了利用声子谱的软化虽然能大幅度地提高T_c值,但要获得包括金属Be在内的非过渡金属的高T_c非晶态超导体的希望是渺茫的。还讨论了非晶态超导体的上临界场H_c2和能隙2Δ₀所表现出的强耦合效应等问题。 关键词：     

铁基超导体Fe1+yTe1-xSex中磁性的中子散射研究

本文对本研究组主要的研究领域——利用中子散射研究铁基超导体系Fe_1+yTe_1-xSe_x中磁性与超导的相互作用进行简要综述. Fe_1+yTe_1-xSe_x具有和其他铁基、铜基超导体相似的相图——母相Fe_1+yTe是反铁磁体, 随着Se掺杂的增加, 母相的反铁磁序受到抑制, 随后在x～30%处体超导出现, 在x～50%处达到最佳掺杂, 此时超导转变温度T_c～ 15 K, 达到整个体系在常压下的T_c最大值. 它们的相图又存在着差别: 在相图末端, 即当Se掺杂达100%时, Fe_1+ySe 仍然超导, T_c～8 K. 该体系母相磁有序的面内波矢大致为(0.5,0) (采用每个原胞含2个铁原子的四方结构), 随着Se含量的增加, 在超导逐渐发展的同时, 磁激发谱的谱重被逐渐转移到波矢为(0.5,0.5) 处. (0.5,0.5) 处在温度低于T_c 时出现中子-自旋共振峰. 施加外磁场后, 超导受到抑制, 该共振峰也被压制. 从这些实验结果我们得到以下的结论: 在这个体系中磁性和超导紧密耦合在一起——(0.5,0) 处的静态磁有序与超导互相竞争, (0.5,0.5) 附近的自旋激发则可能对超导电性的形成具有重要的促进作用. 本文还将简要讨论磁性的来源和3d 过渡金属的替代效应.     

具有—U中心的非简单金属与BCS超导体的邻近效应(Ⅱ)

本文讨论了具有-U中心的非简单金属薄膜与BCS超导体薄膜夹层邻近效应的传导电子能隙函数、态密度及超导转变温度T_c随各参量的变化规律。结果表明,-U中心的存在使激发谱“能隙”内出现很小值的态密度。在一定参数范围内,这种夹层系统的T_c是有可能高于大块BCS超导体的转变温度。 关键词：     

多声子强耦合超导理论

本文提出了多声子过程的强耦合超导理论,给出了能隙方程和T_c公式。结果发现,考虑电子多声子过程,高频声子对提高T_c有重要作用,单胞中对超导贡献的简并度数大,也有利于高T_c的出现。 关键词：     

CeCu2Si2和UBe13的超导理论(Ⅱ)——热力学量的计算

根据文献[1]中给出的模型和能隙方程,计算了超导态的热力学临界磁场,T_c处的比热跃变以及T_c以下的比热行为。结果表明:有关热力学量的临界值与实验结果定性相符;T_c以下的比热行为在整个温区与CeCu₂Si₂和UBe₁₃的实验结果符合。 关键词：     

掺杂半导体的超导过程——杂质-等离振子模型

本文提出了一个“杂质-等离振子模型”,描述掺杂半导体的超导过程。作为其推论:1)定性解释了T_c随压力增加而线性下降的实验结果;2)推导出了一个超导判据,说明重掺杂(n型)是半导体获得超导性的必要条件;3)提出了一种测量超导性半导体中费密能级与杂质能级相对位置的新方法。 关键词：     

掺Ba的2201相的结构与性能的关系

利用电子衍射方法发现Ｂａ的掺杂增强了Ｂｉ系２２０１相的非公度调制，即沿ｂ，ｃ方向的调制周期都明显下降。超导电性研究发现适量Ｂａ的掺杂（ｘ≤０．２）可提高２２０１相的T_c，但当ｘ≥０．３时，其T_c迅速下降，同时伴随超导相－绝缘相的转变。还利用Ｘ射线和紫外光电子能谱系统地分析了此体系的电子结构的特征，在此基础上综合地分析了该体系的非公度调制结构、电子结构与超导电性的相互关系，指出这种Ｂａ^２＋对Ｓｒ^２＋的同价元素的替代加剧了 关键词：     

有效声子谱对超导体临界温度的影响

本文由超导体强耦合能隙方程出发,对64种有效声子谱求得了近3500个临界温度的数值解。它们说明,在谱面积A不变时,T_c具有条件极值(T_c/A)_max。T_c主要取决于α²F(ω)上峰的位置及其面积,与峰的宽度关系不大。控制<ω>及<ω²>两个参量时,用双δ谱来代替L谱所产生的误差为3.2％。本文分析并澄清了文献中关于“λ=2极限”的争论。 关键词：     

压力对NH4IO3及其固溶体相变的影响

在流体静压力到10kbar范围内,采用DTA技术研究了压力对NH₄IO₃及其固溶体K_x(NH₄)_1-xIO₃的相变温度(T_c)的影响。实验结果表明,虽然固溶体的相变温度T_c随K⁺组分的增加而减小,但是dT_c/dP值却同K⁺组分无关。这意味着在压力下IO₃^-离子的伸长对T_c随压力增加起主要作用。 关键词：     

Dependence of Tc on electronic density of states

From the Eliashberg gap equations generalized to include approximately an energy dependence in the electron density of states N(ε) we compute the functional derivative of the critical temperature T_c with N(ε). It is found to be a rapidly decreasing function of the increasing energy away from the Fermi energy. In an appropriate limit, a comparison with the predictions of the McMillan equation shows that it is inadequate in a study of δT_c/δN(ε).     

Pseudo spin gap in high‐Tc oxides observed by NMR

From the temperature dependence of the ⁶³Cu nuclear spin‐lattice relaxation rate, 1/T₁T, in the planar Cu(2) sites, it is now well established that a highly enhanced and strongly temperature dependent relaxation process due to antiferromagnetic Cu spin fluctuations exists in all of the high‐T_c’s. The data also exhibit the opening of a gap in the low‐lying magnetic excitations with an energy comparable to the superconducting gap, particularly for the so‐called low doping regime. It is also found that, irrespective of the system, the temperature at which the spin‐gap opens, T_sg, determined as the peak of 1/T₁T vs. T, has a linear decrease with increasing of the doping concentration. A spin‐gap phase diagram is proposed. This revised version was published online in August 2006 with corrections to the Cover Date.     

Superconductors containing impurities with crystal-field split energy levels

We investigate theoretically the problem of a superconducting matrix containing paramagnetic rare earth impurities with crystal-field split energy levels. There are two competing mechanisms which change the superconducting transition temperatureT _c. One is inelastic charge scattering of conduction electrons from the aspherical part of the 4f charge distribution, which leads to an increase inT _c similar to that of optical phonons. The other and often predominant mechanism comes from the exchange interaction, which depressesT _c and can be very effective even among non-magnetic levels via off-diagonal matrix elements. Crystalline fields serve to alter the effectiveness of the two kinds of scattering depending upon the symmetry character of the low-lying levels, and in favorable cases one may study separately the effects of the two types of scattering by adding different impurities to a given host. We find that crystal-field levels at energies quite high compared tok _B·T_c can still have an important effect onT _c. It is shown that the crystalline-field splitting should be directly observable as structure in the tunneling characteristics.     

Electronic Raman scattering and phonon self-energy effects in the R-123 system: Signatures of gap and pseudogap

Using Raman spectroscopy and transport measurements we investigate thin epitaxial films of Y_1—x(Pr, Ca)_xBa₂Cu₃O_6+y. We explore the electronic Raman responses in A_1g, B_1g, and B_2g symmetry obtained after subtraction of phononic excitations, and especially, the 2Δ peaks that form out of the electronic background below T_c. We find that the energy of the B_1g 2Δ peak, which is a measure of the gap value, increases monotonically with decreasing doping until the peak becomes unresolvable. In contrast, the peak in A_1g symmetry follows T_c being still resolvable in the Pr-doped films. The B_2g response is weak and a 2Δ peak is only detected at the highest doping level. As a consequence of strong electron-phonon coupling, the B_1g phonon at ∼340 cm^—1 exhibits a pronounced Fano-type line shape. We use a phenomenological model to describe the line shape that takes into account real and imaginary part of the electronic response. It allows us to obtain the self-energy corrections and the mass-enhancement factor λ as a measure of the coupling. In the normal state we find λ = 0.015 around optimal doping and decreasing values with decreasing doping. The electron-phonon coupling increases strongly below T_c in overdoped samples in which the B_1g 2Δ peaks appear in the vicinity of the phonon. Self-energy effects observed in the superconducting state can only partly be assigned to the redistributing electronic response. Anomalies with respect to frequency, linewidth, and intensity remain. They appear at increasing temperatures with decreasing doping and we provide evidence that they are connected to the presence of the pseudogap. We supplement our study by a comparison with single crystal data and investigate the influence of site-substitutional disorder on the electronic response and the electron-phonon interaction.     

On the critical temperature in the Al5 compounds

Using a generalized form of the Eliashberg gap equations which includes possible variations of the electronic density of states N(?) with energy, we have calculated the critical temperature for a model density of state which consists of a Lorentzian peak superimposed on a constant background density. By changing the value of the width in the Lorentzian form we discuss the change in T_c with disorder. When the width is reduced to zero T_c saturates (T^s_c) to some finite value which we can calculate. In this region, however, T_c drops sharply with increasing width so that the calculated values of T^s_c are much larger than can be achieved in practice.     

Li- and V-NMR study of LiVS2

⁷Li- and ⁵¹V-NMR have been measured to make clear the electronic state in a two-dimensional triangular lattice LiVS₂. Knight shift of both ⁷Li- and ⁵¹V-NMR is almost independent of temperature below the phase transition temperature T_c of about 310 K from the paramagnetic state to non-magnetic state. The ⁵¹V- spin-lattice relaxation rate 1/T₁ reveals an exponential temperature dependence below T_c, indicating a gap structure of electronic state. These results are consistent with a non-magnetic state with a trimer singlet of V³⁺ spins below T_c.     

杂质对两能带超导体性质的影响

本文中用一个简单的两能带模型讨论了费米面复连通性对超导体性质的影响。计算表明,它的效应与各向异性类似。利用Абрикосов和Горъков所发展的格林函数方法讨论了杂质散射的影响。有杂质时只有一个能隙,且大于纯超导体两个能隙中较小的一个。加杂后转变温度,临界磁场及其在T=0°K附近的温度系数下降,但转变点比热跳跃的相对值增加。低掺杂时在实验中同时测量这些量的变化可以定量地检验理论计算。高掺杂两能带超导体的性质与单能带情形完全相同。此外,利用本文的结果讨论了Pb膜的隧道效应实验和In-Sn,In-Pb系统中的转变温度反常。     

A study on monolayer MoS2 doping at the S site via the first principle calculations

Through the first principle calculation, electronic properties of monolayer MoS₂ doped with single, double, triple and tetra-atoms of P, Cl, O, Se at the surface S site are discussed. Among the substitutional dopant, our calculation results show that when P atoms are doped on a monolayer MoS₂, a shift in the Fermi energy into the valence band is observed, making the system p-type. Meanwhile, band gap gradually decreases as increasing the number of P atoms. On the contrary, Cl is identified as a suitable n-type dopant. It is observed that Cl for initial three dopant behaved as magnetic and afterwards returned to non-magnetic behavior. The band gap of the Cl doped system is also dwindling gradually. Finally, O and Se doped systems have little effect on electronic properties near band gap. Such doping method at the S site, and the TDOS and PDOSs of each doping system provide a detailed of understanding toward working mechanism of the doped and the intrinsic semiconductors. This doping model opens up an avenue for further clarification in the doping systems as well as other dopant using this method.     

Influence of impurities on the band ferromagnetism

The influence of non-magnetic impurities on band ferromagnetism for an electron gas withδ-function interaction is investigated in the framework of the quantum field theory applied to phase transitions. The Hartree-Fock approximation is used for non-zero temperatures. An equation for the magnetizationM and the critical temperatureT F_c is obtained. It is found that the transition temperature is lowered by increasing impurity concentration. There exists a critical concentration which vanishes the ferromagnetism.     

掺Ba对Bi系2212相超导电性的影响

研究了掺Ｂａ对Bi₂Sr_2-xBa_xCaCu₂O_y（０≤ｘ≤０．１５，０．３）单晶和多晶样品超导电性的影响，结果表明，有少量Ｂａ^２＋离子进入了超导相，且有固溶度极限．对于２２１２相单晶，ｃ轴参数和Ｔ_c均随Ｂａ含量增加而增加；对于慢冷多晶样品，掺Ｂａ可明显提高Ｔ_c；然而对于淬大多晶样品，Ｔ_c没有明显变化，用掺Ｂａ 关键词：