Detector and readout performance goals for quantum well and strained layer superlattice focal plane arrays imaging under tactical and strategic backgrounds

Advancements in III–V semiconductor based, Quantum-well infrared photodetector (QWIP) and Type-II Strained-Layer Superlattice detector (T2SLS) technologies have yielded highly uniform, large-format long-wavelength infrared (LWIR) QWIP FPAs and high quantum efficiency (QE), small format, LWIR T2SLS FPAs. In this article, we have analyzed the QWIP and T2SLS detector level performance requirements and readout integrated circuit (ROIC) noise levels for several staring array long-wavelength infrared (LWIR) imaging applications at various background levels. As a result of lower absorption QE and less than unity photoconductive gain, QWIP FPAs are appropriate for high background tactical applications. However, if the application restricts the integration time, QWIP FPA performance may be limited by the read noise of the ROIC. Rapid progress in T2SLS detector material has already demonstrated LWIR detectors with sufficient performance for tactical applications and potential for strategic applications. However, significant research is needed to suppress surface leakage currents in order to reproduce performances at pixel levels of T2SLS FPAs.     

Type II strained layer superlattice: A potential future IR solution

Type II strained layer superlattice (SLS) has been making tremendous progress in the past few years funded by the Missile Defense Agency Advanced Technology Directorate (MDA/DV) under the Passive EO/IR Program. SLS has shown great potential as a future solution for infrared military systems. In this presentation, the most recent progress in SLS development will be presented. The presentation will also discuss the comparison of SLS with mercury–cadmium–telluride (HgCdTe) using Rule 07, SLS minority carrier lifetime issues, and future directions.     

IR Workshop at Biozentrum Basel

A workshop took place from February 1-2, 2011, in Basel, Switzerland, organized by the infrared team of the Swiss Light Source in collaboration with that of SOLEIL. Experienced synchrotron IR users were asked to illustrate the potential of the IR method for researchers from various disciplines. The recently operational IR beamlines at SLS and SOLEIL may benefit from this event.     

Effect of surface on the optical structure and thermal properties of organically capped CdS nanoparticles

Cadmium sulfide (CdS) nanoparticles were synthesized by a novel wet chemical route with various organic thiol stabilizers. Systematic experimental studies, including X-ray diffraction (XRD), ultraviolet–visible (UV–vis) spectroscopy, Fourier transform infrared spectroscopy (FTIR), differential scanning calorimetry (DSC), photoluminescence (PL) spectroscopy, and time-resolved photoluminescence (TRPL), have evidenced that the stability, crystallinity, and optical properties of the CdS nanoparticles are affected by the organic groups which generate significant effects in surface reconstruction. Particle size was evaluated from UV–vis spectroscopy using the effective mass approximation (EMA) method and from XRD patterns based on Scherrer?s formula. The S–H vibrations are not detectable in the infrared (IR) spectra of any of the bound ligands, which are expected for thiols covalently bound to the surface of nanoparticles. PL studies reveal that the emission from the nanostructures is not much influenced by the surface states, indicating a good passivation of the particle?s surface. The time-resolved measurements reveal a biexponential decay behavior. The fast decay component is attributed to the recombination of core states, while the slow decay component of PL is associated with the charge-carrier recombination process with the involvement of surface states.     

交叉传播构型的和频振动光谱

报道和频振动光谱在交叉传播的实验构型下的理论公式推导和实验结果. 在交叉传播的和频振动光谱实验室中,可见光和红外光通过相互垂直的入射面同时照射在界面上,从而避免了对使用同时能够透过可见和红外激光束的光学元件的要求. 这种交叉实验构型能够直接应用到封闭在真空或者压力腔体中的界面,使得在用远红外直接探测金属氧化物及其它低频界面振动模式实验的窗口材料有更多的选择. 这一交叉实验构型的潜在应用包括表面科学、材料科学、基础催化科学以及低温下的分子科学等方面.     

Effect of scratching speed on deformation of soda–lime–silica glass

The grinding and polishing of a fundamentally brittle material like glass to an utmost precision level for ultra-sophisticated applications ranging from mobile devices to aerospace as well as space shuttle components to biomedical appliances pose a big challenge today. Looking simplistically, the grinding and polishing processes are basically material removal by multiple scratching at a given speed. Unfortunately however, the role of the scratching speed in affecting the material removal mechanism in soda–lime–silica (SLS) glass is yet to be comprehensively understood. Therefore, the present work explores the surface and subsurface deformation mechanisms of SLS glass scratched under a normal load of 5 N at various speeds in the range of 100–1000 μm?s^?1 with a diamond indenter of ～200 μm tip radius. The results show important roles of the time of contact, the tensile stress behind the indenter and the shear stress just beneath the indenter in governing the material removal mechanisms of the SLS glass.     

Interface models and processing technologies for surface passivation and interface control in III-V semiconductor nanoelectronics

Interface models and processing technologies are reviewed for successful establishment of surface passivation, interface control and MIS gate stack formation in III-V nanoelectronics. First, basic considerations on successful surface passivation and interface control are given, including review of interface models for the band alignment at interfaces, and effects of interface states in nanoscale devices. Then, a brief review is given on currently available surface passivation technologies for III-V materials, including the Si interface control layer (ICL)-based passivation scheme by the authors’ group. The Si-ICL technique has been successfully applied to surface passivation of nanowires and to formation of a HfO₂ high-k dielectric/GaAs interfaces with low values of the interface state density.     

Multiphase Polymeric Materials for Rapid Prototyping and Tooling Technologies and Their Applications

Rapid prototyping (RP) and tooling (RT) are the technologies for quickly fabricating functional components and tooling inserts directly from CAD data by selectively adding material layer by layer. In this paper, multiphase polymeric materials for RP and RT technologies and their applications, which are developed by the Rapid Manufacturing (RM) Center of Huazhong University of Science and Technology (HUST) in China, were introduced. Selective laser sintering (SLS) is a powder-based RP process. Multi-types of multiphase polymer materials for SLS process were successfully developed in the RM center, and the SLS components were formed from these materials by using the commercial SLS machines HRPS series for various applications. High impact polystyrene (HIPS)/wax blend SLS parts were used as lost patterns for the investment casting process to make complex metal parts rapidly; nylon-12/organically modified rectorite and nylon-12/nanosilica composite powders were used to fabricate functional parts, which showed higher thermal and mechanical properties than neat nylon-12 SLS parts. As a RT application, Fe/epoxy composite tooling inserts were rapidly fabricated by SLS and post-processing. Stereolithography (SLA) uses photocurable resins to rapidly manufacture components with high accuracy and mechanical properties. A freeradical and cationic mixed-type radiation curable composite resin was also successfully developed, and SLA parts without obvious distortion were built on the SLA machines HRPL series from this hybrid resin, successfully and efficiently.     

Extremophilic Polysaccharide for Biosynthesis and Passivation of Gold Nanoparticles and Photothermal Ablation of Cancer Cells

Extremophiles are the group of organisms that are far overlooked for exploring novel biomaterials in the field of material science and bionanotechnology. Extremophilic bacterial‐sulfated exopolysaccharide, mauran (MR), is employed for the bioreduction and passivation of gold nanoparticles (AuNps) to enhance the biocompatibility of AuNps and used for photothermal ablation of cancer cells. Here, various concentrations of MR solution are tested for the reduction of HAuCl₄ solution in the presence as well as in the absence of an external reducing agent, to produce mauran‐gold nanoparticles (MRAu Nps). These biocompatible nanocomposites are treated with cancer cell lines under in vitro conditions and NIR irradiated for complete ablation. MRAu Nps‐treated cancer cells on immediate exposure to infrared radiation from a femtosecond pulse laser of operating wavelength 800 nm are subjected to hyperthermia causing cell death. Biocompatible MR stabilization could fairly reduce the cytotoxicity caused by bare AuNps during biomedical applications. Application of a biocompatible polysaccharide from extremophilic bacterial origin for reduction and passivation of AuNps and used for a biomedical purpose is known to be first of its kind in bionanofusion studies.     

Effect of deuterium on passivation of Si surfaces

A properly passivated silicon surface is chemically stable, and all interface properties are constant. The freshly etched Si surface is full of dangling bonds resulting in high surface activity and instability. Hydrogen treatment is a proper procedure to decrease the number of dangling bonds. We demonstrated that deuterium adsorbs on Si surface at room temperature much stronger than hydrogen. Moreover, in case of deuterium-passivated wafers the vacuum storage can be omitted without risking the non-controlled native oxidation of silicon for up to 5 h or more. It could be a suitable and more robust surface cleaning and passivation process for the industry, but heavy water is expensive. As a cheaper procedure, we showed that 1 min vapor phase treatment at 65 °C of heavy water (D₂O) + 50% HF (e.g. 20:1) mixture was enough to remove the native oxide and to passivate the Si surface without any degradation of the atomic surface flatness. The surface evolution of the D-passivated surface was followed by contact angle measurements, spectroscopic ellipsometry (SE), atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), infrared absorption spectroscopy (IR), surface potential and surface photovoltage (SPV) mapping and light induced potential transient method. Qualification and the results were compared to the H-passivated, bare and native oxide covered Si surface. Our passivation test results confirmed that using D-passivation on Si surface is a promising method in the MOS technology and the interface engineering processes.     

多孔硅的一种新的后处理方法──微波等离子体辅助钝化处理

报道了对多孔硅进行后处理的一种新方法，即真空中微波等离子体辅助的钝化处理．傅里叶变换红外吸收谱表明，经处理的样品表面主要是被SiS_x和SiO_y所覆盖．与未经处理的样品相比，其发光强度增加约3.5倍，PL峰位蓝移了40nm，而且在空气条件下存放60d后发光强度没有变化．表明这种方法是增加多孔硅发光强度和提高稳定性的有效方法之一．     

Growth and electrical characterization of type II InAs/GaSb superlattices for midwave infrared detection

Herein, we report a type II InAs/GaSb superlattice structure (SLS) grown on GaSb(1 0 0) substrates by molecular beam epitaxy (MBE) and its electrical characterization for mid-wavelength infrared detection. A GaSb buffer layer was grown under optimized SLS growth conditions, which can decrease the occurrence of defects for similar pyramidal structures. The complications associated with these conditions include oxide desorption of the substrate, growth temperature of the SLS, the V/III ratio during superlattice growth and the shutter sequence. High-resolution X-ray diffraction (HRXRD) shows the sixth satellite peak, and the period of the SLS was 52.9 Å. The atomic force microscopy (AFM) images indicated that the roughness was less than 2.8 nm. High-resolution transmission electron microscopy (HRTEM) images indicated that the SLS contains few structural defects related to interface dislocations or strain relaxation during the growth of the superlattice layer. The photoresponse spectra indicated that the cutoff wavelength was 4.8 μm at 300 K. The SLS photodiode surface was passivated by a zinc sulfide (ZnS) coating after anodic sulfide.     

聚合物PVP表面修饰CdS纳米棒的制备及其光谱特性

用水热合成方法制备了PVP表面修饰CdS纳米棒,用XRD,TEM,TG-DTA,IR,UV-Vis,PL等光谱技术进行了表征。与未修饰的CdS纳米棒相比,PVP修饰后的CdS纳米棒具有更均匀的尺寸分布,吸收光谱具有结构峰特征,其荧光发射谱增强。     

Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material

The intermediate band (IB) solar cell is a promising third-generation solar cell that could possibly achieve very high efficiency above the Shockley-Queisser limit. One of the promising ways to synthesize IB material is to introduce heavily doped deep level impurities in conventional semiconductors. High-doped Ti with a concentration of 10²⁰ cm^-3-10²¹ cm^-3 in the p-type top Si layer of silicon-on-insulator (SOI) substrate is obtained by ion implantation and rapid thermal annealing (RTA). Secondary ion mass spectrometry measurements confirm that the Ti concentration exceeds the theoretical Mott limit, the main requirement for the formation of an impurity intermediate band. Increased absorption is observed in the infrared (IR) region by Fourier transform infrared spectroscopy (FTIR) technology. By using a lateral p-i-n structure, an obvious infrared response in a range of 1100 nm-2000 nm is achieved in a heavily Ti-doped SOI substrate, suggesting that the improvement on IR photoresponse is a result of increased absorption in the IR. The experimental results indicate that heavily Ti-implanted Si can be used as a potential kind of intermediate-band photovoltaic material to utilize the infrared photons of the solar spectrum.     

衬底钝化处理对CsPbBr3 量子点薄膜发光稳定性影响

钙钛矿量子点因具有发光谱线窄、发光效率高、发光波长可调谐等优异的光学性能,在照明、显示、激光和太阳能电池等领域得到了广泛研究。然而,钙钛矿材料的稳定性问题,一直制约着其在光电器件中的应用。其中,钙钛矿材料在空气中受潮易分解的不稳定性尤为突出,这将严重影响其发光性质。为此,研究人员采用多种手段来改善钙钛矿材料的稳定性。目前,常见的方法是将一些具有疏水性的聚合物材料（例如POSS,PMMA等）引入到钙钛矿纳米晶中,或将钙钛矿纳米晶嵌入到介孔二氧化硅材料中,避免钙钛矿纳米晶暴露于空气中破坏其结构,以此来增强钙钛矿材料的发光稳定性。此外,钝化处理钙钛矿纳米晶表面,也是改善钙钛矿发光稳定性的一种常用方法。这些方法虽然在一定程度上可以改善钙钛矿的发光稳定性,但是在与有机物合成的过程中不免会引入其他有机官能团,介孔二氧化硅的引入,其处理方式相对复杂,而对钙钛矿纳米晶表面的钝化处理会破坏材料的原有结构。以上问题,都会影响钙钛矿的发光性质,不利于其在光电器件中的应用。硅（Si）具有低成本、大尺寸、高质量、导电好等优点,常被选作钙钛矿量子点光电器件的衬底材料。但是,由于Si衬底长时间暴露于空气,其表面易形成一层具有硅烷醇基团（Si-OH）的亲水性薄膜,这将对硅基钙钛矿器件的稳定性产生影响。因此,对Si表面进行钝化处理,破坏其表面Si-OH键,可以降低衬底表面的亲水性,增强疏水性,从而提高钙钛矿材料在器件中的稳定性。本研究使用氢氟酸（HF）对Si衬底表面进行钝化处理,发现钝化处理后的Si衬底表面与水的接触角由50.4°逐渐增大至87.7°,表明Si衬底表面由亲水性逐渐转变为疏水性。利用场致发射扫描电子显微镜(FE-SEM)测试发现,钝化处理后的Si衬底表面变粗糙,并且其表面上的CsPbBr₃量子点(CsPbBr₃ QDs)相对于未处理表面的分散性较好。利用光致发光(PL)光谱研究不同钝化处理时间的Si衬底表面上的CsPbBr₃ QDs薄膜的发光性质。其中,处理与未处理的Si衬底表面上CsPbBr₃QDs薄膜的PL积分强度随功率变化拟合值分别为1.12和1.203,表明其发光机制为激子发光。温度依赖性的PL光谱分析显示,随着温度的升高（10～300 K）,由于晶格热膨胀使CsPbBr₃ QDs带隙增大,发光峰位逐渐蓝移。并且,随着衬底钝化处理时间的增加,CsPbBr₃ QDs薄膜的发光热稳定性逐渐增强,最佳热稳定性可达220 K。而时间依赖性的PL光谱则进一步说明,钝化处理后的Si衬底表面CsPbBr₃QDs薄膜发光的时间稳定性逐渐增强,最高发光时间稳定性可达15 d。因此,通过简单而有效的对Si衬底表面进行钝化处理,可以有效减少了Si表面亲水基团,提高CsPbBr₃QDs薄膜的发光稳定性,为增强钙钛矿量子点在光电器件中的稳定性应用提供了新的研究思路。     

Angle-independent plasmonic infrared band-stop reflective filter based on the Ag/SiO₂/Ag T-shaped array

A plasmonic infrared (IR) filter assisted by localized surface plasmon polaritons (LSPPs) in a Ag/SiO?/Ag T-shaped array was theoretically and experimentally investigated. By using a Fourier transform infrared (FTIR) spectrometer, an angle-independent LSPP resonant mode caused by a Fabry-Pérot resonance in the structure was observed in agreement with the prediction from the rigorous coupled-wave analysis (RCWA) simulation. The resonant wavelength of the mode can also be controlled by modifying the geometry of the T-shaped structure. Such LSPP property can be used as an IR reflection-type band-stop filter with a single spectral bandwidth and an ultrahigh immunity to incident angles.     

Effects of hydroxyl groups and hydrogen passivation on the structure,electrical and optical properties of silicon carbide nanowires

The effects of hydrogen and hydroxyl passivation on the structure, electrical and optical properties of SiCNWs were investigated. The passivation performance of different atoms (groups) were discussed by analyzing the distribution of electronic states and the polarity of chemical bonds. The results show that passivation can improve the stability of SiCNWs structure, and the effect of hydroxyl is better than hydrogen passivation. And hydrogen and hydroxyl passivation both increase the band gap of SiCNWs, and the changing trend of band gap is relevant to the polarity of the covalent bond formed by the passivation of surface atoms. Moreover, passivation enhances the stability of the optical properties of SiCNWs, resulting in narrowing of light absorption, photoconductivity and other spectra, and the response peak shifts to the deep ultraviolet region, which means that hydrogen or hydroxyl passivation of SiCNWs is likely to be a candidate material for deep ultraviolet micro-nano optoelectronic devices.     

Surface passivation of crystalline silicon by sputter deposited hydrogenated amorphous silicon

This letter shows that intrinsic hydrogenated amorphous silicon (a‐Si:H) films deposited by RF magnetron sputtering can provide outstanding passivation of crystalline silicon surfaces, similar to that achieved by plasma enhanced chemical vapour deposition (PECVD). By using a 2% hydrogen and 98% argon gas mixture as the plasma source, 1.5 Ω cm n‐type FZ silicon wafers coated with sputtered a‐Si:H films achieved an effective lifetime of 3.5 ms, comparable to the 3 ms achieved by PECVD (RF and microwave dual‐mode). This is despite the fact that Fourier transform infrared spectroscopy measurements show that sputtering and PECVD deposited films have very different chemical bonding configurations. We have found that film thickness and deposition temperature have a significant impact on the passivation results. Self‐annealing and hydrogen plasma treatment during deposition are likely driving forces for the observed changes in surface passivation. These experimental results open the way for the application of sputtered a‐Si:H to silicon heterojunction solar cells. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

国产枸杞属植物的红外指纹图谱无损快速鉴别研究

用傅里叶变换红外光谱法 (FTIR)无损快速鉴别了国产 10种枸杞。结果表明 :按其形态学分类的7种枸杞和 3变种枸杞与红外指纹图谱有一定的相关性 ,也有一些差异。这 10种枸杞的红外光谱各自均有自己的特征吸收 ,可方便地给以鉴别和区分 ,同时还进一步表明了枸杞中的化学组分之间的差异 ,为枸杞品种优良的宏观质控提供了一个快速、直观、方便、可行的方法     

Crystallization study of sol-gel un-doped and Pd-doped TiO2 materials

Sol-gel nanostructured titania materials have been reported to have applications in areas ranging from optics via solar energy to gas sensors. In order to enhance the photocatalytic activity, there are many studies regarding the doping of titanium dioxide (TiO₂) material with either non-metals (S, C, N, P) or metals (Ag, Pt, Nd, Fe). The present work has studied some un-doped and Pd-doped sol-gel TiO₂ materials (films and gels), with various surface morphologies and structures, obtained by simultaneous gelation of both precursors Ti(OEt)₄ and Pd(acac)₂. Their structural evaluation and crystallization behavior with thermal treatment were followed by DTA/TG analysis, infrared (IR) spectroscopy, Fourier transform infrared (FTIR), spectroellipsometry (SE), X-ray diffraction (XRD) and atomic force microscope (AFM). The influence of Pd on TiO₂ crystallization for both supported and un-supported materials was studied (lattice parameters, crystallite sizes, internal microstrains). The changes in the optical properties of the TiO₂-based vitreous materials were correlated with the changes of the structure. The hydrophilic properties of the films were also connected with their structure, composition and surface morphology.