照明用大功率LED回路热管散热器的研究

分析了照明用大功率LED封装的散热特性,提出了一种用于大功率LED系统散热的回路热管;研究了热负荷、倾角、加热方式等对热管的起动性、均温性、热阻等的影响。试验结果表明,所设计的热管散热器的热阻在0.19K/W~3.1K/W之间,蒸发器的均温性被控制在1.5℃以内,满足大功率LED封装的均温性要求,在热负荷为100W时,蒸发器的温度被控制在100℃以下,满足大功率LED结点温度的控制要求。     

Influence of injection current and temperature on electroluminescence in InGaN/GaN multiple quantum wells

Electroluminescence (EL) spectra of blue InGaN/GaN multiple-quantum-well light-emitting diode (LED) have been investigated over a wide range of injection current (0.001–200 mA) and at various temperatures (6–300 K). Surprisingly, with increasing the injection current the EL peak energy shows an initial blueshift accompanied by a broadening of the EL linewidth at low temperatures (below 30 K). This trend differs from the usual photoluminescence (PL) measurement results, which have shown that with increasing the optical excitation power the PL peak energy gave an initial blueshift accompanied by a narrowing of the PL linewidth at low temperatures. The anomalous current behavior of the EL spectra may be attributed to electron leakage results in the failure of Coulomb screening effect and the relative enhancement of the low-energetic localized state filling at low temperatures and low currents. The electron leakage for the LED is further confirmed by both the current dependence of the EL intensity and the temperature dependence of the EL efficiency.     

51 V GaN基高压LED的热分析

设计并制备了51 V高压LED。对器件进行了大电流冲击试验并对器件的损毁原因进行了分析。运用有限元分析软件ANSYS对LED关键结构部位进行参数化建模及热分布模拟,得到其稳态的温度场分布;然后经过与红外热像仪成像图对比,得出电极烧毁的原因在于芯粒连接处的电极过薄过窄而导致的电阻过大,为后续设计更可靠的高压LED提供了参考。对芯片分别进行蓝光及色温5 000 K的白光封装,并分别测量了热阻,涂覆荧光粉的白光灯珠的热阻要比没有涂覆荧光粉的蓝光灯珠高约4℃/W。同时,51 V高压LED的热阻比1 W大功率LED要高,说明高压LED的散热性能比常规LED要差,这可能与高压LED具有深沟槽及众多的互联电极结构有关。     

A compact bike head lamp design based on a white LED operated at one watt

A design of a compact bike head lamp meeting the K mark regulation based on a white LED by Cree XP-C is presented. The proposed design contains three parts, one is a parabolic mirror, another is a flat mirror and the other is a lens. The design performed a contrast of 66.7 across the cut-off line by the K-mark regulation, and a prototype fabricated by a simple CNC machining was measured a contrast of 12.4 across the cut-off line. The successful design requests the LED operated at only 1 W, and it enables an user to operate the lamp longer with energy saving.     

热电制冷LED自然对流散热的设计与优化

为提升高热流密度下LED灯具的自然对流散热性能,以一款基于热电制冷（TEC）的单颗LED小型灯具模组为研究对象,在采用实验测量和回归拟合准确获得TEC性能参数的基础上,建立了有无TEC参与散热的等效热路模型,并选择合理的数学公式对其进行性能描述,进而遵循本文设计的计算流程快速得到各种散热性能数据。LED模组的散热分析表明：在恒定的LED热功率下,施加最佳的TEC电流可获得最高的散热性能;LED热功率越低,安装TEC的散热性能越比常规方法优异。经遗传算法优化前后的性能对比分析表明：优化后结构中TEC的合理工作区明显增大,能满足LED更高功率的散热需求;当LED为0.493 W时,优化后结构的最佳结温仅为15.66℃,远低于30℃的环境温度。基于TEC实验数据建立的等效热路模型,能为装配TEC的LED模组提供快速完整的散热设计分析与结构优化的合理方案。     

Thermal optimization of high power LED arrays with a fin cooling system

In this paper, we describe an optimization process of thermal design for the light lamp which utilizes the Light Emitting Diode (LED) module as a lighting source. The thermal performance of the LED module was shown to significantly improve by the optimization process of cooling system attached with it. A wind circulating cooling system was designed for the LED arrays with the input power of 60?Watts and another heat pipe cooling system was designed for the input power of 144?Watts. The effects of design parameters such as air temperature and air velocity on the thermal performance of LED lamp were investigated. Thermal performance of the two cooling systems was compared for practical application.     

大功率远程荧光粉型白光LED散热封装设计

针对大功率远程荧光粉型白光LED存在的散热问题,研究了其封装结构的散热设计方法。在分析现有远程荧光粉型白光LED封装结构及散热特点的基础上,提出将荧光粉层与芯片热隔离的同时开辟独立的荧光粉层散热路径的热设计方法。仿真分析结果表明:新的设计能够在不增加灯珠径向尺寸的同时改善荧光粉层的散热能力。在相同边界条件下,改进设计后的荧光粉层温度较改进前降低了10.7℃,芯片温度降低了0.55℃。在芯片基座上设置热隔离槽对芯片和荧光粉层温度的影响可以忽略。为了达到最优的芯片和荧光粉层温度配置,对荧光粉层与芯片之间封装胶层厚度进行优化是必要的。新的封装方法将芯片和荧光粉层的散热问题相互独立出来,既避免了二者的相互加热问题,又增加了灯珠光学设计的自由度。     

集成芯片LED场地照明灯新型叠片散热器热分析

针对大功率LED场地照明集成芯片散热问题,提出了一种新型散热器结构。该散热器利用高导热纯铝材料,采用叠片的方式成型。采用实验和有限元模拟相结合的研究方法,对包括直流电源的新型叠片式LED散热器的散热性能进行了研究。结果表明：LED电源达到稳态所需时间较长,最终能够稳定在一个较低的温度范围。叠片式纯铝散热器通过增加散热面积和提高散热器材料的导热系数能有效降低LED结温。所设计的散热器和选择的电源在自然对流条件下能够很好地满足250 W大功率LED散热要求。     

硅基板和铜基板垂直结构GaN基LED变温变电流发光性能的研究

本文将硅(Si)衬底上外延生长的氮化镓(GaN)基发光二极管(LED)薄膜剥离转移到新的硅基板和紫铜基板上,并获得了垂直结构的LED芯片,对其变温变电流电致发光(EL)特性进行了研究. 结果表明:当环境温度不变时,在13 K低温状态下铜基板芯片的EL波长始终大于硅基板芯片约6 nm,在300 K 状态下随着驱动电流的加大铜基板芯片的EL波长会由大于硅基板芯片3 nm左右而逐渐变为与硅基板芯片重合;当驱动电流不变时,环境温度由13 K升高到320 K,两种基板芯片的EL波长随温度升高呈现S形变化并且波谱逐渐趋于重合;在100 K以下温度时铜基板芯片的Droop效应比硅基板芯片明显,在100 K 以上温度时硅基板芯片的Droop效应比铜基板芯片明显. 可能是由于两种芯片的基板具有不同的热膨胀系数和热导率导致了其变温变电流的EL特性不同. 关键词： GaN 热膨胀系数 内量子效率 热导率     

LED异形灯的散热设计与实验

为了提高LED灯具的散热能力,基于烟囱效应原理,设计了一种新型的LED灯具散热结构。该结构仅采用一块圆柱状基板,不需要散热器,突破了传统LED灯具的构造模式。运用软件Solidworks构建三维模型,用其插件Flow Simulation进行热仿真。当功率为10 W时,LED芯片最高温度为81.34℃。当功率增加到15 W时,最高温度变为105.54℃,高于芯片安全工作温度85℃。因此,本文提出在基板中间加入散热器的改进方案,使LED芯片最高温度下降了30.79℃。并以散热器翅片数12个、内环直径20 mm、翅片厚度1 mm为基础模型参数,进行优化试验。研究表明:在翅片数为12个、内环直径为12 mm、翅片厚度为1 mm时,LED异形灯的散热效果最好,此时,LED异形灯的最高温度为72.21℃。当功率为8,13,15,17,19 W时,LED异形灯芯片的温度都满足LED工作的安全要求。经过对8 W的LED异形灯样品的实验测试,测得其最高温度为53℃,与仿真结果仅相差1.01℃,证实了研究的准确性。所设计的LED异形灯,为解决大功率LED散热问题提供了一条新的途径。     

Evaluation of current and temperature effects on optical performance of InGaAlP thin-film SMD LED mounted on different substrate packages

The relationship between the photometric, electric, and thermal parameters of light-emitting diodes(LEDs) is important for optimizing the LED illumination design. Indium gallium aluminium phosphide(InGaAlP)-based thin-film surface-mounted device(SMD) LEDs have attracted wide attention in research and development due to their portability and miniaturization. We report the optical characterization of InGaAlP thin-film SMD LED mounted on FR4, 2 W, and 5 W aluminum(Al) packages. The optical and thermal parameters of LED are determined at different injection currents and ambient temperatures by combining the T3ster(thermal transient tester) and TeraL ED(thermal and radiometric characterization of power LEDs) systems. Analysis shows that LED on a 5 W Al substrate package obtains the highest luminous and optical efficiency.     

Thermoelectric properties in Mn-doped Bi2Se3

Using n-type and p-type Mn-doped Bi₂Se₃ single crystals, a thin-film-type thermoelectric (TE) module was fabricated and the TE characteristics were investigated. The Seebeck coefficient at room temperature was about 100 μV K⁻¹ with different sign for both materials. From the Seebeck coefficient and resistivity values, the electric power of our TE module was evaluated to be 90 μW for a single couple at the temperature difference of 10 K. This value is compared to that (∼21 μW) of commercialized TE device. Nevertheless, the actual power was measured to be quite small around 0.74 μW, which is much higher than other homemade TE power level. This small power is attributed to the high electrical contact resistance between the TE material and the heat source and sink. Assuming the contact resistance level ∼0.1 Ω similar to that of commercialized TE devices, the electric power should be about 41 μW, which is almost 2 times higher than that in commercialized TE devices. These results propose that the Mn-doped Bi₂Se₃ system is another promising TE material, which can be replaced with the commercialized Bi₂Te₃ system.     

Evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistors by structure function method

The evaluation of thermal resistance constitution for packaged AlGaN/GaN high electron mobility transistor (HEMT) by structure function method is proposed in this paper.The evaluation is based on the transient heating measurement of the AlGaN/GaN HEMT by pulsed electrical temperature sensitive parameter method.The extracted chip-level and package-level thermal resistances of the packaged multi-finger AlGaN/GaN HEMT with 400-μm SiC substrate are 22.5 K/W and 7.2 K/W respectively,which provides a non-invasive method to evaluate the chip-level thermal resistance of packaged AlGaN/GaN HEMTs.It is also experimentally proved that the extraction of the chiplevel thermal resistance by this proposed method is not influenced by package form of the tested device and temperature boundary condition of measurement stage.     

照明用大功率发光二极管封装材料的优化设计

根据传热理论,建立了大功率发光二极管的有限元模型.选择了4种键合材料（高导热导电银胶、纳米银焊膏,大功率芯片键合胶、Sn70Pb30）,4种基板材料（Al2O3、AlN、Al-SiC、铜钼合金）.采用ANSYS有限元热分析软件进行了温度场仿真,得到了大功率发光二极管封装材料的最优选择.研究了基板厚度、芯片输出功率及外接热沉时对发光二极管结温的影响.结果表明:纳米银焊膏-AlN组合具有最优的散热效果|增加散热基板厚度提高散热能力的作用不大|单个发光二极管输出功率有限,应优化封装结构并采用多芯片阵列来满足照明级的需要|外接铝热沉能达到理想的散热效果.     

Time-dependent analytical model of thermal effects in continuous-wave end-pumped Tm:YAP lasers

A time-dependent analytical thermal model of temperature and stresses is developed to investigate the transient behavior of thermal effects in continuous-wave (CW) end-pumped laser rods. To validate the model, it is applied to a CW pumped Tm:YAP crystal and found to be in very good agreement with results of solving heat-transfer equation by finite-difference method and experimental results. The temperature contribution coefficient and stress contribution coefficient are derived from the analytical model. The temperature contribution coefficients obtained from analytical and numerical models are 1.29 K/W and 1.14 K/W, respectively. For the stress contribution coefficient of 0.34 MPa/W, the permissible maximum pump power of ∼471 W is obtained. The focal lengths of the Tm:YAP is measured in the range of 40∼90 mm, when the pump power is between 16 and 34 W.     

InGaAsP/InP双异质结发光管退化特性的研究

在室温(15～35℃),大气气氛中研究了InGaAsP/InP双异质结发光二极管的退化特性。有二种慢退化类型,连续工作104小时后,InGaAsP/InP发光二极管的电学参数、光学参数(除原有暗结构的B型慢退化器件,老化初期光功率下降10～20%外)均无明显变化。用红外电视选行扫描仪观察了老化过程中发光区的EL图象。研究了该器件的退化特性与EL图象的变化规律,找出了它们的对应关系。用扩展缺陷模型解释了InGaAsP/InP双异质结发光管的退化机理。     

温度和电流对白光LED发光效率的影响

对大功率白光LED发光效率进行了研究,得出温度和电流对LED发光效率的影响:随着温度的升高,势阱中辐射复合几率降低,从而降低了发光效率;电流的升高,使更多的非平衡载流子穿过势垒,降低了发光效率。LED工作时,过高的工作温度或者过大的工作电流都会产生明显的光衰:如果LED工作温度超过芯片的承载温度,这将会使LED的发光效率快速降低,产生明显的光衰,并且对LED造成永久性破坏;如果LED的工作电流超过芯片的饱和电流,也会使LED发光效率快速降低,产生明显的光衰。并且LED所能承载的温度与饱和电流有一定关系,散热良好的装置可以使LED工作温度相对降低些,饱和电流也可以更大,LED也就可以在相对较大的电流下工作。     

Nonspherical LED packaging lens for uniformity improvement

Light emitting diode (LED) has more advantages compared with a traditional incandescent light bulb and a fluorescent lamp, such as small size, low quantity of heat, long life, low power consumption, fast response, plain packaging and ease of develop ment of a frivolous short product. A methodology is proposed to improve the uniformity of the LED illumination system. As a light source in a backlight unit (BLU), the requirement for optical characteristics of a LED is different from highly directional conventional ones. New diffused-type LEDs need to be developed to fulfill the requirement of the BLU industry. A non-spherical lens is designed to optimize uniformity, and a great improvement in uniformity from 28.4 to 64% is demonstrated. In the future, it may used in an LED display to improve the unevenness of illumination.     

Structural,morphological and thermoelectric properties of self-decorated copper selenide nanosheets synthesized at room temperature

In this work, an economical, surfactant-free and scalable solution synthesis method at room temperature for self-decorated copper selenide (Cu_2-xSe) nanosheets is reported. Structural and morphological characterizations clearly revealed the formation of single cubic phase Cu_2-xSe nanosheets in nearly stoichiometric ratio. The tentative mechanism for fabrication of self-decorated Cu_2-xSe nanosheets was proposed. Furthermore, nanostructured bulk Cu_2-xSe by hot pressing was explored for thermoelectric performance. High electrical conductivity (1.1 × 10⁵ S/m), moderate Seebeck coefficient (87 μV/K) and low thermal conductivity (1.11 W/mK) at 753 K were obtained. The figure of merit (ZT) ~ 0.56 and power factor (PF) ~ 860 μW/mK² at 753 K showed better performance than some reported Cu_2-xSe nanostructured or bulk counterparts under same temperature. Also, theoretically device ZT ~0.16 and efficiency up to 3% could be achieved. The results indicate that this green and novel synthesis process is an alternative to other reported time or energy consuming processes.     

导流散热型LED灯的热分析与试验研究

对某LED灯开展了空气导流技术的散热设计,进行了有、无空气导流散热条件下的仿真分析,针对热分析模型进行反复修正迭代,得到了准确的仿真结果。仿真分析与试验结果表明,在有空气导流散热的情况下,LED灯的结温较无空气导流散热时降低约8℃,LED灯的使用寿命可延长2 000 h。进一步研究发现,基板下表面的发射率、接触热阻以及LED与对流孔之间的距离等因素对LED灯的散热均有影响,最终对各个影响因素进行灵敏度分析,给出了降低结温的几点建议。