大统一理论:回顾与展望

本文系统地讨论了大统一理论的来龙去脉。回顾了大统一理论的发展历史,讨论了其发展现状及存在问题,指出了进一步发展的方向。本文重点介绍了SU(5)和SO(10)两个模型,讨论了Higgs场、规范等级、渐近自由、重正化等问题。文章进而讨论了一些有趣问题,比如提供了对宇宙重子起源的解释、计算了质子衰变寿命、论述了B-L是否守恒以及讨论了中子和中微子可能有的振荡现象等。     

HLS直线加速器调制器系统设计与改造

介绍了合肥同步辐射光源速调管调制器改造项目.在新的设计中采用了开关型恒流PFN充电电源,计算了充电参数,建立了主放电回路的仿真模型,重点分析了电路中反向电压问题,依据仿真结果及分析设计了反向保护电路.给出了运行中的主要波形.最后介绍了新的调制器控制系统.     

自由落体实验的改进

针对教材中自由落体实验操作的不稳定性,改进了实验,增强了实验操作的稳定性,提高了实验的精确度,减少了实验次数,节省了时间,提高了课堂效率.     

邮票上的物理学史⑨--牛顿

"牛顿由于发现了万有引力定律而创立了科学的天文学,由于进行了光的分解而创立了科学的光学,由于建立了二项式定律和无穷理论而创立了科学的数学,由于认识了力的本性而创立了科学的力学."恩格斯的这段话很好地总结了牛顿的科学业绩.为了纪念牛顿在科学上的伟大建树,许多国家发行了多枚一套的邮票.     

大统一理论:回顾与展望

本文系统地讨论了大统一理论的来龙去脉。回顾了大统一理论的发展历史,讨论了其发展现状及存在问题,指出了进一步发展的方向。本文重点介绍了SU(5)和SO(10)两个模型,讨论了Higgs场、规范等级、渐近自由、重正化等问题。文章进而讨论了一些有趣问题,比如提供了对宇宙重子起源的解释、计算了质子衰变寿命、论述了B-L是否守恒以及讨论了中子和中微子可能有的振荡现象等。     

控制环量设计涡轮的实验研究

采用控制环量方法设计了一单级涡轮。该方法打破了传统的设计规律,为验证该方法的可靠性进行了模型试验。在宽广的范围内测定了总特性;在设计点附近作了沿叶高效率分布及动叶进、出口速度三角形的测定。本文给出了主要试验结果并作了简要分析。结果表明基本上达到了设计要求,控制环量设计的主要特征得到了验证,该方法基本可行。     

物理实验开放式教学初探

网上预约实验实现了各校区资源共享、教学内容有弹性满足了不同层次学生的需求，开放式教学增强了教师的责任心，激发了学生学习的主动性和积极性，提高了实验教学质量，充分利用了实验室的资源，取得了较好的效果。     

某空间望远镜相关跟踪系统摆镜随机振动分析

介绍了基础激励下机构随机振动响应的理论与分析方法.利用有限元分析软件ANSYS建立了某空间望远镜相关跟踪系统摆镜的有限元模型,并进行了随机振动响应分析.通过分析考察了其承受动力学环境的能力.对计算结果进行了分析.指出了现有结构中的薄弱环节,提出了改进方案,为摆镜的设计提供了重要参考依据.     

大气激光通信的实验测量

设计了大气激光通信信道测量系统，利用此系统在不同气象条件下进行了近地视距实验测量并采集了不同天气条件下的实验数据，详细分析讨论了所得实验数据并进行了误差分析．同时实验中获得了大量数据，为进一步完善大气激光信道模型提供了有力的依据．     

地磁场测量实验教学设备的改造、替代及软件选取

介绍了周期幅值法测量地磁场的实验方法,指出了原实验设备存在的问题,同时提出了实验设备的改造方案,并详细介绍了如何软选取件模块.该工作降低了实验教学的维护成本,节约了因等待维护耗费的大量时间,保证了实验教学的顺利进行.     

Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission

The spatial distribution of emission intensity in the active layer of a laser diode (LD) based on an InAsSb/InAsSbP heterostructure (generation wavelength λ_gen ∼ 3.3 μm) is obtained for various stripe widths w by means of numerical solution of the wave equation in the 2D approximation taking into account the refractive index nonlinearity. It has been shown that the special distribution of emission intensity becomes strongly inhomogeneous at w values exceeding 9–10 μm, which results in the appearance of additional maxima in the far-field pattern. Calculated far-field patterns in the active layer plane of the LD agree with corresponding experimental data. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 75, No. 6, pp. 804–808, November–December, 2008.     

光纤耦合LD光束特性及其对振荡光模式的影响

基于菲涅耳-基尔霍夫衍射积分理论,研究了端面泵浦固体激光器中泵浦源——LD阵列光纤耦合模块的输出光空间特性,及其对振荡光特性的影响。结果显示:LD阵列光纤耦合模块的输出光强分布不平滑,呈多尖峰分布,尖峰位置对LD光束指向角敏感,随指向角、空间排布等因素的变化而变化,是多种因素综合作用的结果;具有尖峰结构的泵浦光场对振荡光横模结构有直接影响,泵浦光尖峰位置越居中,光强径向分布曲线在轴心处越凸起,振荡光光束质量越好,越凹陷,振荡光光束质量越差,在激光器设计中应有针对性地具体考虑应对措施。     

Threshold current density in ZnS/MgBeZnS quantum well ultraviolet lasers

We calculate optical gain coefficient and threshold current density in ZnS/MgBeZnS quantum wells (QWs) because ZnS/MgBeZnS QWs are useful for the fabrication of an ultraviolet laser on zinc-blende substrates. The threshold current density in a ZnS/MgBeZnS QW laser diode (LD) with a 10 nm ZnS active layer is calculated to be 1.63 kA/cm². By comparing the measured J _th in a CdZnSe/ZnSSe/ZnMgSSe QW LD with that calculated by us, it is expected that the threshold current density in ZnS/MgBeZnS QW LDs measured by experiment is larger than that calculated by our calculation method.     

Simulation of influence ternary AlGaN and quaternary AlInGaN blocking layers on temperature characteristic of double quantum well violet InGaN laser diodes

Although of the potential advantages of quaternary AlInGaN as a blocking layer (BL) in double quantum well (QW) violet InGaN laser diode (LD), simulation results indicated that the temperature characteristic (T_o value) of the LD with a quaternary AlInGaN BL is lower than the T_o value of the LD with a conventional ternary AlGaN BL, whereas the T_o value of the LD with quaternary AlInGaN BL is 180 K and the T_o value with ternary AlGaN BL it is 194 K. This is due to the enhance carrier holes distribution between the double QWs with using the quaternary BL.     

Effects of quantum confined stark effect and well thickness on optical properties of double quantum wells violet InGaN laser diodes

The effects of quantum confined stark effect (QCSE) and quantum well (QW) thickness on the optical properties of violet InGaN laser diodes (LDs) have numerically been investigated. The simulation results indicated that the QCSE greatly effects the optical properties of LDs, where QCSE relates to the QW thickness and it increases when the QW thickness is wider which leads to deteriorating of the optical proprieties of the violet InGaN LD. The polarization in the active region of the InGaN LD has been estimated by the blue shift of the wavelength and it is found that the blue shift of the wavelength depends on the QW thickness. The major simulation result has shown that the best properties of violet InGaN LD can be obtained with smaller QW thickness, where more carriers can be restricted, stayed and overlapped inside the QW which leads to a larger stimulated recombination rate and optical material gain which in turn increase the output power of the LD; while decreasing the threshold current of the LD.     

Thermal optics distortion of face pump slab lasers with two pump arrangements

Two pump arrangements, which are the slow axis and the fast axis of LD stacks parallel to the length direction of the slab, are simulated. From the results the optical intensity along the width of the slab is Gaussian and super-Gaussian distribution, respectively. Then based on heat conduction equation and conductively cooling boundary condition, the calculation of the distribution of absorbed pump power, temperature and thermal stress with the tool of finite element analyses is performed. From these results we numerically calculate the thermal focusing in zigzag and perpendicular zigzag planes using the ray tracing method running at low and high repetition rates. It is found that the temperature distribution along width has a significant impact on the thermal stress and thermal optics distortion, especially running at high repetition rate or high average power. Finally, the conclusion was that the pump arrangement with the fast axis of LD stacks parallel to the length direction of the slab is superior to the slow axis of LD stacks parallel to the length direction of the slab in decreasing thermal lens effect and obtaining high beam quality.     

基于微透镜阵列匀束的激光二极管面阵抽运耦合系统分析

为了提升高功率固体激光器中激光二极管(LD)面阵抽运场性能,采用几何光学和数理统计分析的方法,建立了基于微透镜阵列匀束的LD面阵抽运耦合系统的数学与物理模型,对微透镜阵列参数与最终耦合输出抽运场参数之间的关系进行分析,明确了微透镜单元F数、微透镜通光单元数以及微透镜阵列空间周期参数的设计原则.经实验测试,优化设计完成的LD面阵抽运耦合系统光场不均匀度为7.9%,耦合效率为90.7%.     

LD阵列侧面泵浦棒状激光介质内的光场研究

建立了LD侧面泵浦激光介质内的光场分布数值模型。通过光线追迹方法,简化了介质对泵浦光折射的计算方式。利用Matlab软件数值模拟了泵浦光在介质内的归一化分布。提出获得高质量、高能量的激光输出参数的选取原则。当LD的束腰半径为1μm、LD的数量为40个、介质的半径为1.5mm、发光面到介质的泵浦距离为0.5mm、介质吸收系数在2cm-1～6cm-1之间时,泵浦光在激光介质内的增益分布较好。     

Vertical-cavity surface-emitting laser in the long-wavelength (700 nm) region in the visible by energy transfer between organic dyes

In this work, organic vertical-cavity surface-emitting lasers (VCSELs) with single-mode laser output in the long-wavelength region (~700 nm) of the visible were reported based on the energy transfer between dye pairs consisting of pyrromethene 597 (PM597) and rhodamine 700 (LD700). By co-doping PM597 into the polymeric hosts, the fluorescence intensity of LD700 was enhanced by 30-fold and the photophysical parameters of the donor–acceptor pairs were investigated, indicating the involvement of non-radiative resonance energy transfer processes between PM597 and LD700. Active distributed Bragg reflectors (DBR) were made by alternately spin-coating dye-doped polyvinylcarbazole and cellulose acetate thin films as the high and low refractive index layers, respectively. By sandwiching the active layer with 2 DBR mirrors, VCSEL emission at 698.9 nm in the biological first window (650–950 nm) was observed under the 532-nm laser pulses. The laser slope efficiency and threshold were also measured.     

Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer

The design of the active region structures, including the modifications of structures of the quantum barrier(QB) and electron blocking layer(EBL), in the deep ultraviolet(DUV) Al Ga N laser diode(LD) is investigated numerically with the Crosslight software. The analyses focus on electron and hole injection efficiency, electron leakage, hole diffusion,and radiative recombination rate. Compared with the reference QB structure, the step-like QB structure provides high radiative recombination and maximum output power. Subsequently, a comparative study is conducted on the performance characteristics with four different EBLs. For the EBL with different Al mole fraction layers, the higher Al-content Al Ga N EBL layer is located closely to the active region, leading the electron current leakage to lower, the carrier injection efficiency to increase, and the radiative recombination rate to improve.