Influences of Bi2O3/V2O5 Additives on the Microstructure and Magnetic Properties of Lithium Ferrite

Lithium ferrite materials with different concentrations of Bi2O3 and V2O5 additives are prepared by the conventional ceramic technique. The x-ray diffraction analysis proves that the additives do not affect the final crystal phase of the lithium ferrite in our testing range. Both Bi2O3 and V2O5 additives could promote densification and lower sintering temperature of the lithium ferrite. The average grain size first increases, and then gradually decreases with the Bi2O3 content. The maximal grain size appears with 0.25 wt% Bi2O3. The average grain size first increases, and then is kept almost unchanged with the V2O5 content. The maximal average grain size of the samples with V2O5 additive is much smaller than that of the samples with Bi2O3 additive. Furthermore, the V2O5 additive more easily enters the crystal lattice of the lithium ferrite than the Bi2O3 additive. These characteristics evidently affect the magnetic properties, such as saturation flux density, ratio of remanence Br to saturation flux density Bs, and coercive force of the lithium ferrite. The mechanisms involved are discussed.     

Structural Stability of CaCuMn6O12 under High Pressure and Low Temperature

In situ high pressure energy-dispersive x-ray synchrotron radiation diffraction and resistance experiments are carried out on CaCuMn6O12. Its crystal structure is stable in the measured pressure range. The equation of state of CaCuMn6O12 is obtained from the V/Vo - P relationship （V and Vo are the volumes at pressure P and at atmosphere）. The bulk modulus Bo is calculated based on the Birch-Murnaghan equation. Low temperature x-ray diffraction shows no phase transition occurring down to 160K.     

Space-Selective Precipitation of Ba2TiSi2O8 Crystals in Sm3^＋-Doped BaO-TiO2-SiO2 Glass by Femtosecond Laser Irradiation

The ferroelectric crystal Ba2TiSi2O8 with high second-order optical nonlinearity is precipitated in Sm^3＋-doped BaO-TiO2-SiO2 glass by a focused 800hm, 250 kHz and 150fs femtosecond laser irradiation. No apparent blue and red emissions are observed at the beginning, while strong blue emission due to second harmonic generation and red emission due to the f-f transitions of Sm^3＋ are observed near the focal point of the laser beam after irradiation for 25s. Micro-Raman spectra confirm that Ba2 TiSi2O8 crystalline dots and lines are formed after laser irradiation. The mechanism of the phenomenon is discussed.     

A comparative study on Zn0.8Cd0.2O films deposited on different substrates

Highly (0 0 2)-oriented Zn_0.8Cd_0.2O crystal films were prepared on different substrates, namely, glass, Si(1 1 1) and α-Al₂O₃(0 0 1) wafers by the dc reactive magnetron sputtering technique. The Zn_0.8Cd_0.2O/α-Al₂O₃ film has the best crystal quality with a FWHM of (0 0 2) peak of 0.3700°, an average grain size of about 200 nm and a root-mean-square surface roughness of about 70 nm; yet the Zn_0.8Cd_0.2O/glass holds the worst crystal quality with a much larger FWHM of 0.6281°. SIMS depth profile shows that the Zn and O compositions change little along the film depth direction; the Cd incorporation also almost holds the line towards the top surface other than an accumulation at the interface between the film and the substrate. The Cd content in the film is nearly consistent with that in target.     

Low-temperature sintering and microwave dielectric properties of Ca2Zn4Ti15O36 ceramics

The sintering behavior, microstructures, and microwave dielectric properties of Ca₂Zn₄Ti₁₅O₃₆ ceramics with B₂O₃ addition were investigated. The crystalline phases and microstructures of Ca₂Zn₄Ti₁₅O₃₆ ceramics with 0-10 wt% B₂O₃ addition were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray spectroscopy (EDS). The sintering temperature of Ca₂Zn₄Ti₁₅O₃₆ ceramic was lowered from 1170 to 930 °C by 10 wt% B₂O₃ addition. Ca₂Zn₄Ti₁₅O₃₆ ceramics with 8 wt% B₂O₃ addition sintered at 990 °C for 2 h exhibited good microwave dielectric properties, i.e., a quality factor (Qf) 11,400 GHz, a relative dielectric constant (ε_r) 41.5, and a temperature coefficient of resonant frequency (τ_f) 94.4 ppm/°C.     

Some crystallography,chemistry, physics,and thermodynamics of B12O2, B12P2, B12As2, and related alpha-boron type crystals

This paper shows that several alpha-boron type compounds may be useful as high-temperature semiconductors with decent carrier motilities, high electrical resistivity, good optical transparency, good stability under high radiation bombardment, and possess high neutron capture cross-sections. The most promising are B₁₂O₂, B₁₂P₂, and B₁₂As₂. Their relationship to alpha-boron, B₁₃C₂, and other derivative crystals is explained. A study of their chemical and thermodynamic properties indicates how single crystals useful for electronic devices can be grown.     

Cd1-xZnxTe在高压下的电学性质、状态方程与相变

 在金刚石压砧装置上,采用电阻和电容测量方法研究了Cd_1-xZn_xTe（x=0.04）在室温下、17 GPa内的电阻、电容与压力的关系。实验结果表明,它在3.1 GPa左右和5 GPa左右发生了两次电子结构相变,而在3.1 GPa以上和5.7 GPa左右发生了两次晶体结构相变。同时,还在活塞-圆筒测量装置上研究了Cd_1-xZn_xTe（x=0.04）在室温下、4.5 GPa内的p-V关系。实验结果表明它在3.8 GPa左右发生了相变。本工作还给出了它在相变前后的状态方程,以及它的Grüneisen参数γ₀、体弹模量B₀ 与B₀ 的压力导数B₀′。     

Effect of In-Doping on Electronic Structure and Optical Properties of Sr2TiO4

The effect of In doping on the electronic structure and optical properties of Sr2 TiO4 is investigated by a firstprinciples calculation of plane wave ultrasoft pseudopotentials based on density functional theory. The calculated results reveal that corner-shared TiO6 octahedra dominate the main electronic properties of Sr2TiO4 and the covalency of the Ti-O（1） bond in the ab plane is stronger than that of the Ti-O（2） bond along the c-axis. After In doping, there is a little lattice expansion in Sr2In0.125 Ti0.875 O4 and the interaction between the Ti-O bond near the impurity In atom is weakened. The binding energies of Sr2TiO4 and Sr2In0.125Ti0.875O4 estimated from the electronic structure calculations indicate that the crystal structure of Sr2In0.125 Ti0.875 O4 is still stable after doping, but its stability is lower than that of undoped Sr2TiO4. Moreover, the valence bands （VBs） of the Sr2In0.125Ti0.875O4 system consist of O 2p and In 4d states, and the mixing of O 2p and In 4d states makes the top VBs shift significantly to high energies, resulting in visible light absorption. The adsorption of visible light is of practical importance for the application of St2 TiO4 as a photocatalyst.     

Effect of ZnO/CdO on the structure and electrical conductivity in Li2O·MO·Bi2O3·B2O3 glasses (M=Zn, Cd)

Studies of structural and electrical properties have been carried out on a number of glasses with wide ranging compositions in the glass systems Li₂O·MO·Bi₂O₃·B₂O₃ (where M=Zn or Cd), in order to understand the effect of transition metal (TM) ions on the structure of these glasses. The density and molar volume measurements have also been made to understand the structural changes occurring in these glasses. The dc conductivity measured in the temperature range 423-623 K obeys Arrhenius law. It increases with increase in Li₂O/MO ratio. The results of infrared spectra indicate that TM ions (Zn²⁺ or Cd²⁺) behave as network former in the present system. Boron exists in both tri- and tetra-hedral units in these glasses and no boroxol ring formation takes place in the glass structure. Values of theoretical optical basicity have also been reported.     

Writing of two-dimensional crystal curved lines at the surface of Sm2O3-Bi2O3-B2O3 glass by samarium atom heat processing

Two-dimensional crystal curved lines consisting of the nonlinear optical Sm_xBi_1−xBO₃ phase are fabricated at the surface of 8Sm₂O₃·37Bi₂O₃·55B₂O₃ glass by continuous wave Nd:YAG laser (wavelength: 1064 nm) irradiation (samarium atom heat processing) with a power of ∼0.9 W and a laser scanning speed of 5 μm/s. The curved lines with bending angles of 0-90° or with sine-shapes are written by just changing the laser scanning direction. The polarized micro-Raman scattering spectra for the line after bending are the same as those for the line before bending, indicating that the crystal plane of Sm_xBi_1−xBO₃ crystals to the crystal growth direction might be maintained even after the change in the laser scanning direction. It is found from laser scanning microscope observations that the crystal lines at the surface are swelled out smoothly, giving a height of about 10 μm.     

Single crystal synthesis and electrical properties of CdSnO3, Cd2SnO4, In2TeO6 and Cdln2O4

Single crystals of CdSnO₃, Cd₂SnO₄, ln₂TeO₆ and CdIn₂O₄ were grown by either flux or high pressure methods. High electrical conductivity resulted from chemical substitution or oxygen deficiency. Crystallographic and conductivity data are given.     

Influence of Ytterbia Content on Residual Stress and Microstructure of Y2O3--ZrO2 Thin Films Prepared by EB-PVD

Y2O3 stabilized ZrO2 （YSZ） thin films with different Y2O3 molar contents （0, 3, 7, and 12 mol%） are deposited on BK7 substrates by electron-beam evaporation technique. The effects of different Y2O3 contents on residual stresses and structures of YSZ thin films are studied. Residual stresses are investigated by means of two different techniques： the curvature measurement and x-ray diffraction method. It is found that the evolution of residual stresses of YSZ thin films by the two different methods is consistent. Residual stresses of films transform from compressive stress into tensile stress and the tensile stress increases monotonically with the increase of Y2O3 content. At the same time, the structures of these films change from the mixture of amorphous and monoclinic phases into high temperature cubic phase. The variations of residual stress correspond to the evolution of structures induced by adding of Y2O3 content.     

Thermoluminescence studies on Cu-doped Li2B4O7 single crystals

Lithium tetraborate (Li₂B₄O₇) is a tissue equivalent material and single crystals of this material doped with Cu are promising for dosimetric applications. In the present study highly transparent single crystals of lithium tetraborate (Li₂B₄O₇) doped with Cu (0.5 wt%) have been grown using the Czochralski technique. The Li₂B₄O₇:Cu crystals were studied using photoluminescence, X-ray diffraction (XRD), UV-vis transmission, time resolved fluorescence and thermoluminescence (TL) techniques. The TL readout of Li₂B₄O₇:Cu crystals showed two well-defined glow peaks at 402 K (peak-1) and 513 K (peak-2) for a 4 K/s heating rate. While the low temperature TL peak-1 fades completely within 24 h at room temperatures, the main dosimetric peak-2 remains the same. The TL sensitivity of the grown single crystal is found to be 3.3 times that of a conventional TL phosphor, TLD-100. The Li₂B₄O₇:Cu crystals showed a linear TL dose-response in the range from 1 mGy to 1 kGy. The TL analysis using a variable dose method revealed first order kinetics for both the peaks. Trap depth and frequency factor for peak-1 were found to be 0.81 eV and 5.2×10⁹ s⁻¹, whereas for peak-2 the values were 1.7 eV and 1.7×10¹⁶ s⁻¹, respectively.     

Vacuum Ultraviolet Excited Photoluminescence Properties of Novel Na3Y9O3（BO3）8：Tb^3＋ Phosphor

The novel vacuum ultraviolet （VUV） excited Na3 Y9O3 （BO3）8：Tb^3＋ （NYOB：Tb^3＋） green phosphor is prepared. Strong VUV photoluminescence and high quenching concentration of Tb^3＋ （20 wt%） are observed in NYOB： Tb^3＋ and the strong emission are correlated with the unique layer-type structure of NYOB. All the characteristic 4 f - 5d transitions of Tb^3＋ and the host absorption band in VUV region are identified in the excitation spectrum. Based on the results, the energy levels scheme of Tb^3＋ in NYOB：Tb^3＋ is first established. This newly developed NYOB：Tb^3＋ phosphor shows excellent optical properties when compared with the commercial Zn2SiO4：Mn^2＋ and would be a potential VUV-excited green phosphor.     

Emission characteristics of Er in vapor-transport-equilibrated Er/Zn-codoped LiNbO3 crystals

Polarized visible and infrared emission characteristics of Er³⁺ ions in vapor-transport-equilibration (VTE)-treated LiNbO₃ crystals codoped with different concentrations of Zn and Er were investigated in comparison with corresponding as-grown crystals. The results show that the VTE treatment leads to substantial spectral changes of Er³⁺ emissions at 0.65, 0.98 and 1.5 μm regions, and the spectral changes in the 0.98 and 1.5 μm regions appear to be Zn-concentration-dependent. It is concluded in combination with X-ray powder diffraction results and optical absorption characteristics reported previously that the VTE treatment resulted in crystalline phase transformation with respect to Er³⁺ ions from original LiNbO₃ to ErNbO₄ phase in all crystals studied. The formation of the ErNbO₄ phase and the Zn²⁺ codopants are responsible for the VTE-induced substantial spectral changes. The emission characteristics of the ErNbO₄ precipitates in the Zn/Er-codoped crystals are found to be very different from those of the ErNbO₄ precipitates in the only Er-doped crystal in the infrared region, and the difference is attributed to the influence of the Zn²⁺ codopant on the Er³⁺ ion environment. The mechanism of the crystalline phase transformation is qualitatively explained from the viewpoint of the declined solubility of Er³⁺ ion in a Li-rich LiNbO₃ crystal and from the phase diagram of Li₂O-Nb₂O₅ system.     

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

Memory Effect of Metal--Insulator--Silicon Capacitors with SiO2/HfO2/Al2O3 Dielectrics

Charge trapping characteristics of the metal-insulator-silicon （MIS） capacitors with Si02/HfO2//A12O3 stacked dielectrics are investigated for memory applications＇. A capacitance-voltage hysteresis memory window as large as 7.3 V is achieved for the gate voltage sweeping of ±12 V, and a fiat-band voltage shift of 1.5 V is observed in terms of programming under 5 V and I ms. Furthermore, the time- and voltage-dependent charge trapping characteristics are also demonstrated, the former is related to charge trapping saturation and the latter is ascribed to variable tunnelling barriers for electron injecting and discharging under different voltages.     

偏硼酸钡低温相晶体在高压下的电学性质与相变

 在金刚石压砧装置上，采用电容和电阻测量方法研究了偏硼酸钡低温相晶体（β-BaB₂O₄）在室温下和16 GPa内的电容、电阻与压力的关系。实验结果表明，它的电容在2.1、4.6、6.4、8、9.5、10.7 GPa左右都有一个突变。这说明β-BaB₂O₄内部的结构状态在这些压力下都发生了变化，可能发生了相变。还发现β-BaB₂O₄样品在较高压力下已发生了非晶化转变，而且是不可逆的，在卸压后被保留下来。这个非晶化转变的压力大约在11~12 GPa。     

Cr3+掺杂的Cd3Al2Ge3O12光谱特性及晶场参数计算

采用高温固相法合成了Cd₃Al₂Ge₃O₁₂：Cr³⁺多晶材料,利用X射线衍射对其结构进行了分析,通过Cr³⁺的室温吸收光谱、室温和77K发射光谱分别对其光谱特性和晶场参数进行了分析和计算.结果表明：在450 nm的蓝光激发下,Cd₃Al₂Ge₃O₁₂：Cr³⁺室温发 关键词： 3Al₂Ge₃O₁₂：Cr³⁺')" href="#">Cd₃Al₂Ge₃O₁₂：Cr³⁺ 荧光光谱 晶场参数 可调谐激光     

高温高压下SrB4O7：Eu2+玻璃的晶化

 利用X射线衍射和Eu²⁺发射光谱方法研究了非晶玻璃SrB₄O₇在高温高压下的晶化。结果表明：在5.0 GPa压力下，200 ℃仍为玻璃态，只有几个强度极低的小峰，表明有晶化的迹象；600 ℃时已基本晶化，但为SrB₄O₇正交相与SrB₄O₇高压立方相二相共存；当温度提高到1 000 ℃时，晶化成了近单相的与常压SrB₄O₇粉末晶体相同的正交结构。伴随晶化度的加强，Eu²⁺发射强度增强，与Ｘ射线衍射结果相一致。