飞秒激光烧蚀镍钛形状记忆合金的蚀除机理

结合双温模型的分子动力学模拟方法,研究了飞秒激光脉冲辐照B2结构镍钛合金时烧蚀阈值附近的靶材蚀除机制,数值模拟了中心波长为800nm,脉宽为100fs,能量密度为25~50mJ/cm2的激光与90nm厚B2结构镍钛合金薄膜相互作用过程。确定了脉宽为100fs的脉冲激光与镍钛形状记忆合金相互作用的烧蚀阈值,发现烧蚀阈值条件下,靶材的蚀除机制是单纯基于应力作用的机械破碎;烧蚀阈值附近,未蚀除靶材受热影响发生无序化相变的区域较小,且随激光能量密度的降低而减小。提高激光功率密度,烧蚀同时呈现热机械蚀除和机械破碎机制。     

飞秒激光打孔硅的孔洞形貌研究

在飞秒激光打孔硅材料过程中,为了得到表面等离子体效应和激光烧蚀形成的孔洞对后续激光能量在孔内分布的影响,建立单脉冲等离子体阈值理论模型及设计连续飞秒激光烧蚀硅材料实验.理论计算得到的损伤阈值为0.21J/cm2,符合实验模型测得的阈值0.20~0.25J/cm2.当载流子密度达到临界值Ncr,等离子体的激发会导致表面反射率短时间内急剧上升.入射激光通量从0.5J/cm2增大到3.0J/cm2,烧蚀深度逐渐增大并趋于约1.1μm,同时脉宽从150fs减小到50fs,烧蚀结构类似于椭圆形烧蚀轮廓.后续激光脉冲辐照在已形成的孔洞上时,基于时域有限差分法,控制光束与孔壁的夹角从79℃到49℃,激光能量越接近孔底中心,越易引发该范围内的等离子体激发;且在不同偏振态光束辐照下,孔底的能量分布不同会造成相应特殊的烧蚀形貌.增大激光通量和减小脉冲宽度获得理想的初始孔洞结构,可使后续脉冲能量集中孔底中心区域,打孔效果更好.     

紫外超短脉冲激光放大过程中脉宽压缩的方案设计

采用放电泵浦KrF准分子激光放大器放大波长为248.4nm的紫外超短脉冲激光。对于能量为0.7mJ、脉宽为550fs的输入脉冲,在光束直径保持10mm不变的条件下,能量放大到15mJ,脉宽展宽到1200fs。为了压缩输出脉冲宽度,分析了群速度色散和自相位调制效应对脉宽展宽的影响。利用棱镜对,采用4种不同的实验方案对脉冲引入负的线性频率啁啾,以补偿KrF准分子激光放大器CaF2窗镜中的群速度色散和自相位调制对脉冲引入的正的线性频率啁啾。结果表明:在放大器之前放置棱镜对的方式可以在保持输出脉冲能量为15mJ的同时,在棱镜对间距为110cm的条件下,将输出脉冲宽度压缩到370fs,输出波长为248.4nm、带宽为0.4nm。     

飞秒激光激发空气电离的阈值研究

报道在脉宽50fs—22ps,波长800nm脉冲激光作用下的空气电离阈值的研究结果.利用探测等离子体发光信号的方法,实验测量了激发空气电离所需的阈值激光强度.结果表明,当激光脉冲宽度从50fs增加到22ps时,阈值光强I_th从8.7×10¹⁴W/cm²下降到2.7×10¹³W/cm²;I_th经历了由迅速降低逐渐发展为缓慢降低的过程.在50fs—1p 关键词： 飞秒激光 阈值 多光子电离 碰撞电离     

飞秒激光对氟化镁烧蚀机理研究

用扫描电镜(SEM)研究了氟化镁在800nm超短脉冲激光作用下的单枪表面烧蚀形貌.根据烧蚀斑面积与激光脉冲能量间的对数关系，测得烧蚀阈值与激光脉宽的关系曲线(55—750fs).计算了导带电子的双光子吸收，改进了多速率方程模型，很好地解释了实验结果. 关键词： 飞秒激光 氟化镁 烧蚀机理 双光子吸收     

多脉冲飞秒激光对锗材料的烧蚀效应

 开展了脉宽为40 fs的不同数量激光脉冲对锗材料的烧蚀效应实验,采用扫描电镜、激光共聚焦显微镜等方法对不同数量的飞秒激光脉冲作用下锗材料表面烧蚀区进行了检测,并对作用后材料烧蚀形貌演化规律进行了分析,初步分析了锗材料烧蚀区周围形成的不同环区的形貌特征及成因,对各环区烧蚀形貌特征随激光作用脉冲数的增加而产生的形貌演化过程进行了观测。并给出单脉冲飞秒激光对锗材料的烧蚀阈值为1.2 J·cm^-2,采用激光共聚焦显微镜测得该阈值条件下单个飞秒激光脉冲对锗材料的烧蚀深度约为150 nm。     

激光波长及脉宽对光学材料抗损伤性能的影响

 基于能带理论,利用激光与光学材料相互作用的理论模型,研究了激光辐照下材料导带自由电子数密度的变化,讨论了材料损伤阈值与激光波长、脉冲宽度、材料禁带宽度之间的关系,数值分析了激光波长和脉冲宽度对损伤阈值的影响。结果表明:当脉宽小于1 ps时,材料损伤阈值随脉宽增大而减小;当脉宽大于1 ps时,材料损伤阈值随脉宽增大而增大;激光波长为10 fs~10 ns,损伤阈值随着波长的减小而减小。     

飞秒激光对高反膜的破坏及其超快动力学过程

研究了800nm飞秒激光照射下45°高反膜ZrO2-Si O2的破坏及其超快动力学过程。利用原子力显微镜和扫描电镜观察了材料的烧蚀形貌,测量了破坏阈值与脉冲宽度、烧蚀深度与脉冲能量的依赖关系。随着脉冲宽度从50fs增加到900fs,其烧蚀阈值从0.35J/cm2增加到1.78J/cm2。烧蚀深度与激光能流密度近似成对数关系。当激光强度略高于烧蚀阈值时,材料很快被烧蚀到几百纳米,烧蚀深度表现出明显的层状特性。同时,利用建立的抽运探针实验系统,测量了高强度抽运脉冲作用下材料对探针光的反射率随延迟时间的变化,揭示了薄膜烧蚀的超快动力学过程。实验结果表明高反膜表层的材料对烧蚀特性有重要影响。     

飞秒激光对镍基合金的损伤机制和阈值行为

针对飞秒激光加工镍基单晶高温合金材料,在能量密度为0~12.8J/cm2和脉冲个数为0~8000范围内,对表面损伤和加工侧壁区域进行了显微形貌分析,研究了不同能量密度和脉冲个数情况下的损伤机制,不同损伤机制的损伤阈值和热效应。镍基单晶高温合金经飞秒激光加工后,呈现两种损伤机制,分别为非热熔性损伤和热熔性损伤,单脉冲损伤阈值分别为0.23J/cm2和1.21J/cm2,孕育系数分别为0.90和0.92。在此基础上,建立了损伤机制和损伤阈值与能量密度和脉冲个数的定量关系,实验结果对加工无微裂纹和无再铸层的高质量镍基航空器件的工艺选择有实际指导意义。     

飞秒激光脉冲的高效率放大研究

 介绍了采用多通放大的飞秒脉冲掺钛蓝宝石激光放大系统,分析讨论了提高放大效率及缩短脉冲宽度的技术方法。在仅用能量290mJ的倍频Nd:YAG激光泵浦下,得到了输出峰值功率大于1.4TW、脉宽25fs、重复频率10Hz的超短超强激光脉冲。     

Incubation effect and its influence on laser patterning of ITO thin film

Results are presented on the surface damage thresholds of ITO thin films induced by single- and multi-pulse laser irradiation at a pulse duration of 10 ps and a wavelength of 1064 nm. For multi-pulse ablation the incubation effect results in a reduction of the damage threshold, especially apparent at low pulse numbers and very small film thicknesses. The incubation effect attributes to the accumulation of defect sites and/or the storage of thermal stress-strain energy induced by the incident laser pulses. An incubation coefficient of S=0.82 has been obtained which is independent on the film thickness in the range of 10–100 nm. In practical applications, the incubation effect determines the laser patterning structure of ITO films while increasing the pulse overlapping rate. The width of the patterned line can be predicted by the proposed model involving the laser fluence, the overlapping rate and the incubation coefficient.     

Femtosecond laser ablation characteristics of nickel-based superalloy C263

Femtosecond laser (180 fs, 775 nm, 1 kHz) ablation characteristics of the nickel-based superalloy C263 are investigated. The single pulse ablation threshold is measured to be 0.26±0.03 J/cm² and the incubation parameter ξ=0.72±0.03 by also measuring the dependence of ablation threshold on the number of laser pulses. The ablation rate exhibits two logarithmic dependencies on fluence corresponding to ablation determined by the optical penetration depth at fluences below ∼5 J/cm² (for single pulse) and by the electron thermal diffusion length above that fluence. The central surface morphology of ablated craters (dimples) with laser fluence and number of laser pulses shows the development of several kinds of periodic structures (ripples) with different periodicities as well as the formation of resolidified material and holes at the centre of the ablated crater at high fluences. The debris produced during ablation consists of crystalline C263 oxidized nanoparticles with diameters of ∼2–20 nm (for F=9.6 J/cm²). The mechanisms involved in femtosecond laser microprocessing of the superalloy C263 as well as in the synthesis of C263 nanoparticles are elucidated and discussed in terms of the properties of the material.     

飞秒激光在空气和水中对硅片烧蚀加工的实验研究

采用1 kHz,800 nm,50 fs—24 ps的钛宝石激光脉冲对单晶硅样品在空气和水溶液环境中的烧蚀加工特性进行了研究.实验观察到了超短脉冲激光在空气氛围中烧蚀形成的双层环状结构,分析揭示了加工区域中心和边缘的烧蚀物理机制分别为热熔化和库仑爆炸,并测量了双层环状结构半径随入射激光能量、脉冲数及持续时间等的变化关系,结果表明获取较大深-宽比的加工效果需选择小能量脉冲激光的多次作用.在水溶液环境中,实验发现飞秒激光在样品表面诱导产生了亚微米量级的多孔状结构,而皮秒激光则更容易实现对硅表面的非热性去除.这是由于激光诱导的光机械应力和空泡效应随脉冲宽度变大而增强所致,在实验上确立了区分这两种不同加工状态的临界脉冲宽度. 关键词： 飞秒激光 硅片 激光加工     

Femtosecond laser ablation of silicon–modification thresholds and morphology

We investigated the initial modification and ablation of crystalline silicon with single and multiple Ti:sapphire laser pulses of 5 to 400 fs duration. In accordance with earlier established models, we found the phenomena amorphization, melting, re-crystallization, nucleated vaporization, and ablation to occur with increasing laser fluence down to the shortest pulse durations. We noticed new morphological features (bubbles) as well as familiar ones (ripples, columns). A nearly constant ablation threshold fluence on the order of 0.2 J/cm² for all pulse durations and multiple-pulse irradiation was observed. For a duration of ≈100 fs, significant incubation can be observed, whereas for 5 fs pulses, the ablation threshold does not depend on the pulse number within the experimental error. For micromachining of silicon, a pulse duration of less than 500 fs is not advantageous. Received: 4 December 2000 / Revised version: 29 March 2001 / Published online: 20 June 2001     

Influence of consecutive picosecond pulses at 532 nm wavelength on laser ablation of human teeth

The interaction of 40 ps pulse duration laser emitting at 532 nm wavelength with human dental tissue (enamel, dentin, and dentin–enamel junction) has been investigated. The crater profile and the surface morphology have been studied by using a confocal auto-fluorescence microscope (working in reflection mode) and a scanning electron microscope. Crater profile and crater morphology were studied after applying consecutive laser pulses and it was found that the ablation depth increases with the number of consecutive pulses, leaving the crater diameter unchanged. We found that the thermal damage is reduced by using short duration laser pulses, which implies an increased retention of restorative material. We observe carbonization of the irradiated samples, which does not imply changes in the chemical composition. Finally, the use of 40 ps pulse duration laser may become a state of art in conservative dentistry.     

Parametric study on femtosecond laser pulse ablation of Au films

Ablation process of 1 kHz rate femtosecond lasers (pulse duration 148 fs, wavelength 775 nm) with Au films on silica substrates has been systemically studied. The single-pulse threshold can be obtained directly. For the multiple pulses the ablation threshold varies with the number of pulses applied to the surface due to the incubation effect. From the plot of accumulated laser fluence N × ?_th(N) and the number of laser pulses N, incubation coefficient of Au film can be obtained (s = 0.765). As the pulse energy is increased, the single pulse ablation rate is increasing following two ablation logarithmic regimes, which can be explained by previous research.     

Femtosecond uv excimer laser ablation

Experiments on the ablation of polymethylmethacrylate (PMMA) with 300 fs uv excimer laser pulses at 248 nm are reported for the first time. With these ultrashort pulses, ablation can be done at fluences up to five times lower than the threshold fluence for 16 ns ablation of PMMA, and the surface morphology is improved, also for several other materials. A model for ablation is proposed, assuming a non-constant absorption coefficient _eff depending on the degree of incubation of the irradiated material and the intensity of the incoming excimer laser pulse. The agreement between our model and our experimental observations is excellent for 16 ns excimer laser pulses, also predicting perfectly the shape of a pulse transmitted through a thin PMMA sample under high fluence irradiation. Qualitative agreement for 300 fs excimer laser pulses is obtained so far.     

超短脉冲照射下氟化锂的烧蚀机理及其超快动力学研究

研究了超短脉冲激光照射下LiF晶体的破坏机理及其超快动力学过程,利用扫描电镜和原子力显微镜等测试手段,观测了飞秒激光照射下LiF晶体的烧蚀形貌。利用烧蚀面积与激光脉冲能量的对数关系确定了LiF晶体的破坏阈值,并利用非线性玻璃棒展宽脉宽,得到了800nm激光作用下LiF破坏阈值对激光脉宽（50～1000fs）的依赖关系;利用抽运一探针超快探测平台,探测了LiF烧蚀过程中反射率的变化。采用雪崩击穿模型,并根据晶体材料反射率与材料的介电常量的依赖关系,通过数值计算,模拟了材料烧蚀阈值与脉宽的依赖关系及材料激发过程中反射率的变化关系。结果表明,理论结果与实验结果符合较好。讨论了飞秒激光照射下LiF晶体中导带电子数密度的变化规律,并解释了相应的实验结果。     

Selective ablation of thin SiO<Subscript>2</Subscript> layers on silicon substrates by femto- and picosecond laser pulses

The selective ablation of thin (∼100 nm) SiO₂ layers from silicon wafers has been investigated by applying ultra-short laser pulses at a wavelength of 800 nm with pulse durations in the range from 50 to 2000 fs. We found a strong, monotonic decrease of the laser fluence needed for complete ablation of the dielectric layer with decreasing pulse duration. The threshold fluence for 100% ablation probability decreased from 750 mJ/cm² at 2 ps to 480 mJ/cm² at 50 fs. Significant corruption of the opened Si surface has been observed above ∼1200 mJ/cm², independent of pulse duration. By a detailed analysis of the experimental series the values for melting and breaking thresholds are obtained; the physical mechanisms responsible for the significant dependence on the laser pulse duration are discussed.