碳同素异形体中的正电子理论

在密度函数理论的基础上,采用中性原子叠加模型和有限差分方法(SNA-FD)计算了石墨,金刚石和C60这三种碳的同素异形体中的正电子分布和湮没情况. 计算表明,在片层结构的石墨晶体中,正电子主要在石墨层间的空隙中湮没,计算出的石墨中的正电子寿命为208ps,与文献中的实验结果210ps符合很好. 在金刚石单晶中,正电子主要在碳原子之间的空隙中存在并发生湮没,计算出的金刚石中的正电子寿命为1159ps,与文献中的实验结果110ps相符合;在面心立方结构的C60晶体中,正电子主要在C60分子球壳内外侧及分子之 关键词： 石墨 金刚石 C60 正电子寿命     

碳纳米管束中的正电子理论

采用中性原子叠加模型和有限差分方法(SNA-FD)计算了大范围内不同管径的单壁碳纳米管束中的正电子情况，发现对于单壁碳纳米管束，正电子的主要湮没区域，湮没对象和正电子寿命随碳纳米管管径的不同而发生规律性变化.计算得到管径范围在0.8—1.6nm的碳纳米管束的正电子寿命范围为332—470ps，与实验测得的394ps符合较好.     

Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal

Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6?MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378?eV (10?K). The irradiation creates an intense and narrow emission at 3.368?eV (10?K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368?eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164?±?1?ps) and irradiated crystal (175?±?1?ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ～4?×?10(17)?cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ～175?ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.     

Recovery of deformed iron studied by positrons

The isochronal annealing of two plastically deformed irons of 99.998% and 99.86% purities is studied by positron lifetime and annihilation line shape measurements. The results show that trapping of positrons is caused by dislocations. At around 300° C a recovery process attributed to a rearrangement of dislocation structure is observed in the pure but not in the impure iron. The positron lifetime in deformed and recrystallized state is found to be 167 ps and 117 ps, respectively.     

Positron lifetimes and lineshape factors in deformed copper

Measurements of positron annihilation lifetime and lineshape factors in deformed OFHC copper, for 14 different pairs of specimen, ranging up to 66% deformation, are discussed. The influence of annihilation in the source is carefully examined and the data are consequently corrected. The lifetime varies from (124±2) ps for annealed copper to (179±2) ps for dislocation saturated samples. Trapping cross sections and trapping efficiencies are calculated. The possibility of interference of vacancies formed during the deformation is discussed.     

Helium bubbles in neutron-irradiated copper-boron studied by positron annihilation

The influence of helium, introduced by the ¹⁰B(n, α)⁷Li reaction, on the evolution of defect structure in copper containing a few hundred ppm boron has been studied by detailed positron lifetime and two-photon angular correlation measurements, supplemented by TEM studies. In the as-irradiated state of Cu-B, two lifetime components have been resolved. The shorter lifetime, τ₁, = 167 ps of 97% intensity, has been understood as due to positron trapping at small helium-vacancy complexes, while the longer lifetime τ₂ = 450 ps of 3% intensity is explained as due to helium-free voids. Marked changes in the annihilation characteristics observed at 670 K are interpreted in terms of the nucleation of microbubbles, controlled by thermally activated helium migration to vacancy traps. Corroborative evidence for the onset of helium clustering is obtained from the change in the average size of positron traps as deduced from the smearing of the measured angular correlation spectra. Helium bubbles and helium-free voids coexisting in the system have been distinguished by a three-component analysis of the lifetime spectra. Bubbles are found to be stable beyond the temperature of dissociation of voids. The size and concentration of bubbles, determined independently by TEM measurements, are in accordance with the positron annihilation results in the growth stage. The observed positron lifetime at higher annealing temperatures has been analysed by relating the annihilation rate to helium atom density and helium pressures in bubbles evaluated. These pressures are in satisfactory agreement with the estimates of equilibrium pressures, leading to the conclusion that bubble relaxation occurs by the mechanism of thermal vacancy condensation.     

基于北京慢正电子强束流的微脉冲化系统设计

慢正电子湮没寿命测量是研究材料表面微观缺陷的重要分析方法．束团化系统是实现慢正电子湮没寿命测量的核心部件, 主要由斩波、聚束两部分组成, 它可以将随时间连续分布的束流束团化, 从而获得正电子湮没寿命测量的时间起点及满足时间分辨率要求的束团．本文以粒子动力学计算为基础, 完成了束团化系统的物理设计, 其时间分辨率设计值为150ps(FWHM)．     

Detection of hydrogen in neutron-irradiated nickel using positron lifetime spectroscopy

Hydrogen in nano-voids in neutron-irradiated nickel has been detected using positron annihilation lifetime spectroscopy (PALS). As positron lifetime is greatly affected by nano-voids bound with hydrogen, special attention was paid to the analysis. The positron lifetime of neutron-irradiated nickel at higher irradiation doses increased with the dose, which is an indicator for vacancy cluster (nano-void) formation in the lattice. The introduction of hydrogen in well-annealed nickel by electrical charging also resulted in an increase in positron lifetime due to vacancy formation. In neutron-irradiated nickel specimens, hydrogen charging shortened the positron lifetime from 456 to 334 ps (irradiation dose: 3 × 10^?3 dpa). Isochronal annealing behaviour of hydrogen-charged nickel and neutron-irradiated nickel was also studied. Positron trapping rate was calculated using a simple trapping model. Thermal desorption spectroscopy was used for the investigation of hydrogen behaviour in non-irradiated hydrogen-charged nickel.     

Design of a Pulsed Low Energy Positron System Based on Beijing Intense Slow Positron Beam

The design of a pulsing system for an intense slow positron beam is described in this paper. Slow positron annihilation lifetime measurement is an important method to study the depth-dependent characteristics of the surface and near surface. The start signal for slow positron lifetime measurement can be obtained from the pulsing system, which consists of a reflection type chopper, a prebuncher and a buncher. On the basis of the simulation of dynamics process by Parmela, the frequency of the buncher and the positron energy have been chosen to be 150MHz and 330eV respectively. The designed time resolution of this system is about 150ps (FWHM).     

Characterization of diamond single crystals by means of double-crystal X-ray diffraction and positron annihilation

The crystallinity of synthesized and natural crystals of diamond was characterized by double-crystal X-ray diffraction and positron annihilation. The two-dimensional angular correlation of annihilation radiation and positron lifetime measurements revealed that in natural crystals positroniums are formed in a high fraction. The synthesized crystal Ib showed both an extremely small width for the diffraction and a positron lifetime spectrum with a single component of the lifetime of 115 ps. In contrast, the natural diamonds contain a long-lived component of lifetime longer than 2 ns. The diffusion length of positrons was also measured by a variable-energy positron beam. In the synthesized crystal IIa, a diffusion length of about 100.8 nm was observed.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

Positron trapping mechanism in plastically deformed magnesium

In order to investigate positron–dislocation interactions, the evolution of the positron lifetime parameters with the degree of deformation of Mg samples was studied. For a low degree of thickness reduction a second component of 244?ps could be decomposed from the positron lifetime spectra. This component was attributed to dislocations introduced during deformation. For thickness reductions higher than 15% the value of the second component increases to 253?ps. This lifetime was assigned to jogs introduced along dislocations when multiple deformation systems were activated at high degrees of deformation. Positron experimental results were interpreted by the assumption that dislocations act as a previous step to positron localization at jogs. A trapping model with three stages, bulk annihilation and trapping at both dislocations and jogs, has been proposed to describe the trapping mechanism in the highly deformed samples. A sample with a thickness reduction of 40% was annealed from room temperature to 525?K. A recovery stage centred at 425?K was been detected. According to the literature this stage has been assigned to anneal out of dislocations.     

Positron annihilation in aluminium at low and superlow temperatures

Positron lifetime and Doppler broadening of annihilation radiation have been measured in aluminium between 12 mK and 300 K. Positrons are not localized in aluminium in the whole temperature interval. The value of the positron lifetime is 167±4 ps. The data obtained for theS-parameter above 77 K is explained by simple thermal expansion.     

Temperature effect on positron trapping in Fe59Ni25Cr16 alloy containing voids

Positron annihilation measurements were performed in austenitic Fe₅₉Ni₂₅Cr₁₆ alloy containing vacancy-type defects. Lifetime data were recorded between 4K and 400K. The positron trapping process was studied as a function of temperature and cluster size. The smaller defects characterized by a lifetime of 260 ps yield an unchanged trapping rate during temperature scanning. However, the trapping phenomenon is strongly temperature dependent for the larger size defects, with a typical lifetime of 500 ps.     

CVD金刚石膜的结构分析

利用x射线广角衍射和低角掠入射散射谱、正电子湮没谱、定性分析软件和Positronfit程序，研究了生长在Si（100）基底上的金刚石膜微结构.研究发现，在样品邻近基底区域为纳米 多晶结构，具有弱的［111］织构；在邻近表面区域为微米多晶结构，具有强的［220］织构 .金刚石膜样品有空位、空位团和空洞3种缺陷，其中主要缺陷是大约10个空位形成的空位团 . 关键词： 金刚石膜 化学气相沉积 x射线掠入射 正电子湮没谱     

利用正电子湮没技术研究钾掺杂钨合金中的缺陷

钨合金中钾的掺杂会引入大量的缺陷,如尺寸几十纳米的钾泡、高密度的位错以及微米量级的晶粒带来的晶界等,这些缺陷的浓度和分布直接影响合金的服役性能.本文运用正电子湮没谱学方法研究钾掺杂钨合金中的缺陷信息,首先模拟计算了合金中各种缺陷的正电子湮没寿命,发现钾的嵌入对空位团、位错、晶界等缺陷的寿命影响很小;然后测量了不同钾含量掺杂钨合金样品的正电子湮没寿命谱,建立三态捕获模型,发现样品中有高的位错密度和低的空位团簇浓度,验证了钾对位错的钉扎作用,阐述了在钾泡形成初期是钾元素与空位团簇结合并逐渐长大的过程;最后使用慢正电子多普勒展宽谱技术表征了样品中缺陷随深度的均匀分布和大量存在,通过扩散长度的比较肯定了钾泡、晶界等缺陷的存在.     

Hg1-xCdxTe晶体缺陷的正电子湮没寿命

利用正电子(e⁺)湮没寿命谱实验研究了Hg_1-xCd_xTe晶体样品的空位缺陷.碲溶剂法生长的样品，不论是n型导电还是p型导电都存在大量的Hg空位.经过合适的退火工艺，p型材料转为n型，同时对正电子的俘获效应减小，表现为正电子湮没平均寿命值减小14—17ps.若退火温度高于350℃，正电子湮没寿命值又增大，表明Hg空位浓度增加.得到HgCdTe中正电子的体寿命为τ_b=272ps.根据正电子湮没寿命和电参数的测量结果，得出 关键词：     

Positron annihilation studies of defects in helium-irradiated silicon

Positron annihilation studies have been carried out on Si-n irradiated with He⁺ ions at the V.U.B. cyclotron, to a dose of 4×10¹⁷ He/cm². No temperature dependence on the S-parameter and lifetimes is seen below the irradiation temperature. The positron lifetime associated to the created defects is 290 ps. During the isochronal annealing, this lifetime stays constant up to 700 K. It is attributed to the annihilation of positrons from large vacancy-clusters filled with He atoms. From the isochronal annealing results, only one annealing stage is seen. This annealing stage which extends over a long range of temperature 700–1000 K, is ascribed to the degassing of helium atoms from defects and the growth of vacancy-clusters. The lifetime of positrons in those defects reaches a value of about 530±30 ps at 1000 K, indicating that the vacancy-clusters formed have a mean size of more than 8 vacancies.     

化合物半导体材料的正电子寿命计算

在局域密度理论（LDA）和广义梯度理论（GGA）的基础上计算了ZnO,GaN,GaAs,SiC和InP五种化合物半导体材料中的正电子湮没信息,包括化合物半导体材料中的自由态正电子的湮没寿命;还有不同类型空位（单空位,双空位）附近俘获的束缚态正电子密度分布和湮没率分布,以及束缚态正电子的湮没寿命. 关键词： 半导体 正电子寿命     

A slow positron lifetime study of the annealing behaviour of an amorphous silicon layer grown by MBE

We have studied MBE grown amorphous silicon, which was recrystallized at different temperatures for one hour, with a pulsed positron beam. A positron lifetime of 538±10 ps in the as-grown state is attributed to microvoids containing at least 10 vacancies. An incompletely recrystallized sample annealed at 500°C shows an additional long lifetime from ortho-positronium (o-Ps) pick-off annihilation. The o-Ps component disappears for samples, recrystallized at 700°C and above, and the defect lifetime steadily decreases with higher annealing temperature until a value of 310 ps is reached for the layer annealed at 1200°C. This value is explained by positron trapping at dislocations or small vacancy defects stabilized by dislocations or impurities.Paper presented at the 132nd WE-Heraeus-Seminar on Positron Studies of Semiconductor Defects, Halle, Germany, 29 August to 2 September 1994     

SmFeAsO材料的正电子寿命研究

首次用正电子湮灭寿命谱仪（PALS）测量SmFeAsO多晶样品常温下的寿命谱,得到两个寿命成分1516 ps和2903 ps,根据捕获模型得到正电子在SmFeAsO中湮灭的体寿命为1870 ps,与理论计算（广义梯度近似）得到的SmFeAsO单晶中的正电子体寿命173 ps符合较好.基于中性原子叠加模型-有限差分方法(SNA-FD)的理论计算得到正电子与单晶SmFeAsO中各个原子价电子的总湮灭率是其与各个原子核心内层电子总湮灭率的106倍,正电子与Fe,As,Sm,O原子的电子湮灭的概率之比是1∶13∶12∶1. 关键词： 高温超导 正电子寿命