(Bi1-x Agx)2(Te1-ySey)3粉体的机械合金化制备及其放电等离子烧结体的热电输运特性

采用机械合金化制备了n型(Bi_1-xAg_x)₂(Te_1-ySe_y)₃合金粉体,对其进行XRD分析表明Bi,Te,Ag,Se单质粉末,经2h球磨后实现了合金化;SEM分析表明随着机械合金化时间延长粉体颗粒变得均匀、细小,颗粒尺寸在微米至亚微米数量级.采用放电等离子烧结制备了块体样品,研究了合金成分和球磨时间对热电性能的影响.结果表明材料的热电性能与掺杂元素有密切关系,Ag有利于提高功率因子和降低晶格热导率,球磨10h的(Bi_0.99Ag_0.01)₂(Te_0.96Se_0.04)₃合金粉末的烧结块体具有最大的功率因子和最低的晶格热导率,并在323K取得最高ZT值0.52. 关键词： 1-xAg_x)₂(Te_1-ySe_y)₃合金')" href="#">(Bi_1-xAg_x)₂(Te_1-ySe_y)₃合金 机械合金化 放电等离子烧结 热电性能     

(Sb2Te3)0.75(1－x)(Bi2Te3)0.25(1－x)(Sb2Se3)x机械合金化粉体的制备及其冷压烧结样品的热电性能研究

采用机械合金化法制备了p型赝三元(Sb₂Te₃-Bi₂Te₃-Sb₂Se₃)合金粉体，对其进行XRD分析表明Te，Bi，Sb，Se单质粉末，经100h球磨后实现了合金化；SEM分析表明所得机械合金化粉体材料颗粒均匀、细小，颗粒尺寸在10nm到100nm量级.使用这种粉体制备了冷压烧结块体样品，在室温下测量了温差电动势率(α)和电导率(σ)，研究了烧结温度对材料热电性能的影响，结果表明在低于300℃的烧结温区，样品室温下的热电性能随烧结温度的升高不断提高，功率因子(α²σ)由未烧结样品的0.59μW cm^-1K^-2升高到在300℃下烧结样品的15.9μW cm^-1K^-2，这一结果对确定材料的最佳烧结温度具有重要意义. 关键词： 赝三元热电材料 机械合金化 冷压 烧结     

熔体旋甩法合成n型(Bi_(0.85)Sb_(0.15))_2(Te_(1-x)Se_x)_3化合物的微结构及热电性能

采用熔体旋甩结合放电等离子烧结(MS-SPS)技术制备了单相n型四元(Bi0.85Sb0.15)2(Te1-xSex)3(x=0.15,0.17,0.19,0.21)化合物,并对所得样品的微结构和热电传输性能进行了系统研究.样品自由断裂面的场发射扫描电子显微镜及抛光面的背散射电子成分分析表明:块体材料晶粒细小,晶粒排列紧密,成分分布均匀且相结构单一,样品中存在大量10—100nm的层状结构.随着Se含量x的增加,样品的电导率和热导率逐渐增加,而Seebeck系数逐渐降低.相比商业应用的区熔材料,MS-SPS方法合成的高Se组成的样品均在425K后表现出更高的ZT值,其中(Bi0.85Sb0.15)2(Te0.83Se0.17)3样品具有最高的ZT值,在360K可达到0.96,并在320—500K均保持较高的ZT值,500K时其ZT值相比区熔材料提高了48%.此外,通过调节Se的含量,可以有效地调控材料的ZT峰值出现的温度段,这对多级或梯度热电器件的制备具有重要意义.     

Co1-xNixSb3-ySey热电输运中晶界和点缺陷的耦合散射效应

结合机械合金化与放电等离子烧结工艺制备了Ni和Se共掺的细晶方钴矿化合物Co1-x NixSb3-ySey,研究了晶界和点缺陷的耦合散射效应对CoSb3热电输运特性的影响.通过Ni掺杂优化载流子浓度提高功率因子.在x=0.1时,功率因子达到最大值1750μWm-1K-2(450℃),是没有掺Ni试样的两倍.晶界和点缺陷的耦合散射机理使晶格热导率急剧下降,其中Co0.9Ni0.1Sb2.85Se0.15的室温晶格热导率降低至1.67Wm-1K-1,接近目前单填充效应所能达到的最低值1.6Wm-1K-1,其热电优值ZT在450℃时达到最大值0.53.将Callaway-Von Baeyer点缺陷散射模型嵌入到Nan-Birringer有效介质理论模型,对晶界散射和点缺陷散射的耦合效应对热导率的影响进行了定量分析,模型计算与实验结果符合.理论模型计算表明,当晶粒尺寸下降到50nm同时掺杂引入点缺陷散射后,Co0.9Ni0.1Sb2.85Se0.15的晶格热导率下降到0.8Wm-1K-1.     

机械合金化结合高压烧结制备PbSe-PbS固溶体合金的热电性能

硒化铅(PbSe)作为一种无碲热电材料受到广泛关注。采用机械合金化结合高压烧结方法制备了PbSe-PbS固溶体合金(PbSe1–x Sx),并研究了Se/S含量对其结构和热电性能的影响。结果表明:采用机械合金化法能够快速合成出PbSe1–x Sx固溶体合金粉末,高压烧结实现了其快速致密化;通过调整Se/S比例可以实现PbSe1–x Sx电输运性能和导电类型的调控;固溶体合金能够实现短波声子散射,显著降低PbSe材料的热导率;当x=0.5、温度为600 K时,PbSe1–x Sx的最高品质因子达到0.54,比PbSe的品质因子(0.33@450K)高64%。     

热压制备(AgSbTe2)100-x-(GeTe)x合金的热电性能

以Pb粉、Te粉、Ag粉、Ge粉为原材料,在真空气氛下合成(AgSbTe₂)_100-x-(GeTe)_x (x=80---90) (TAGS)合金热电材料, X射线衍射(XRD)分析表明,热压烧结后合金具有低温菱形结构. 通过热压烧结法将TAGS粉末制备成块体材料,运用XRD和扫描电子显微镜对材料的物相成分、 晶体结构和形貌进行了表征.采用直流四探针法测定样品的电导率,当样品两端的温差为1---4℃ 的情况下测量Seebeck系数.通过材料热电性能测试,研究了30---500℃温度范围内不同组分 样品性能参数的变化.结果表明,所制备的TAGS热电材料具有纳米结构, 其性能随着组分的变化而变化, TAGS-80具有较好的热电性能,在530℃时具有最高热电优值(ZT=1.80).     

纳米结构碲化铋合金的制备及电热输运特性

采用惰性气体保护蒸发-冷凝法制备了纳米Bi及Te粉末, 结合机械合金化和放电等离子烧结技术, 在不同烧结温度下制备出了单一物相且具有纳米层状结构及孪晶亚结构的n型Bi₂Te₃块体材料, 并系统研究了块体材料的晶粒尺度、微结构及其对电热传输特性的影响. SEM, TEM分析结果表明, 以纳米粉末为原料, 通过有效控制工艺条件, 可以制备出具有纳米层状结构Bi₂Te₃合金块体材料, 同时纳米层状结构中存在孪晶亚结构; 热电性能测试结果表明, 具有纳米层状结构及孪晶亚结构的块体试样与粗晶材料相比, 热导率大幅度降低, 在423 K附近, 热导率由粗晶材料的1.80 W/mK降至1.19 W/mK, 晶格热导率从1.16 W/mK降至0.61 W/mK, 表明纳米层状结构与孪晶亚结构共存, 有利于进一步提高声子散射, 降低晶格热导率. 其中在693 K放电等离子烧结后的试样于423K附近取得最大值的无量纲热电优值(ZT), 达到0.74.     

高压烧结制备Tb掺杂n型(Bi1–xTbx)2(Te0.9Se0.1)3合金及其微结构和热电性能

采用高压烧结技术制备了稀土元素Tb掺杂的n型Bi2Te2.7Se0.3基纳米晶块体热电材料.将高压烧结成型的样品于633 K真空退火36 h.研究了Tb掺杂量对样品的晶体结构和热电性能的影响.结果表明,高压烧结制备的样品为纳米结构, Tb掺杂使样品的晶胞体积变大,功率因子增大,热导率降低,从而使ZT值提高.Tb掺杂量为x=0.004是最优的掺杂量,该掺杂量的高压烧结样品经退火处理后,于373 K时ZT值达到最大为0.99,并且在323-473 K范围内, ZT值均大于0.8,这对用于温差发电领域具有重要意义.     

利用晶体结构工程提升GeSe化合物热电性能的研究

在热电研究领域, Ge Se是一种二维层状结构具有较大带隙的半导体,本征载流子浓度低,热电性能差.在本工作中,采用熔融淬火结合放电等离子活化烧结工艺制备了一系列的Ge Se_1–x Te_x (x=0, 0.05, 0.15, 0.25,0.35, 0.45)多晶样品,研究了Te含量对Ge Se化合物物相结构和热电输运性能的影响规律.结果表明:随着Te含量的增加, Ge Se的晶体结构逐渐由正交相向菱方相转变,使得材料的带隙降低,载流子浓度和迁移率同步增加;同时,晶体对称性的提高增加了化合物的能带简并度,有效提高了载流子有效质量.在这些因素的共同作用下,菱方相Ge Se的功率因子比正交相Ge Se提高约2—3个数量级.此外,菱方相Ge Se具有丰富的阳离子空位缺陷以及铁电特性所导致的声子软化现象,这导致其晶格热导率比正交相Ge Se降低近60%.当Te含量为0.45时,样品在573 K取得最大热电优值ZT为0.75,是本征Ge Se样品的19倍.晶体结构工程是提升Ge Se化合物热电性能的有效途径.     

Co1-xNixSb3-ySey热电输运中晶界和点缺陷的耦合散射效应

结合机械合金化与放电等离子烧结工艺制备了Ni和Se共掺的细晶方钴矿化合物Co_1-xNi_xSb_3-ySe_y,研究了晶界和点缺陷的耦合散射效应对CoSb₃热电输运特性的影响.通过Ni掺杂优化载流子浓度提高功率因子.在x=0.1时,功率因子达到最大值1750μWm^-1K^-2(450℃),是没有掺Ni试样的两倍.晶界和点缺陷的耦合散射机理使晶格热导率急剧下降,其中Co_0.9Ni_0.1Sb_2.85Se_0.15的室温晶格热导率降低至1.67Wm^-1K^-1,接近目前单填充效应所能达到的最低值1.6Wm^-1K^-1,其热电优值ZT在450℃时达到最大值0.53.将Callaway-Von Baeyer点缺陷散射模型嵌入到Nan-Birringer有效介质理论模型,对晶界散射和点缺陷散射的耦合效应对热导率的影响进行了定量分析,模型计算与实验结果符合.理论模型计算表明,当晶粒尺寸下降到50nm同时掺杂引入点缺陷散射后,Co_0.9Ni_0.1Sb_2.85Se_0.15的晶格热导率下降到0.8Wm^-1K^-1. 关键词： 3')" href="#">CoSb₃ Ni和Se掺杂 热电性能 耦合散射效应     

Comparing the band structure of Ag(1 1 1) monolayers on Ni(1 1 1) and Ni (0 0 1)

Ag(1 1 1) monolayers prepared on two substrates, Ni(1 1 1) and Ni(0 0 1), were studied with angle-resolved photoemission; their two-dimensional band dispersions were found to be identical within experimental uncertainties. Comparing the present results with those for Ag/Cu(0 0 1), the major difference is just a shift of 0.32 eV in all the binding energies. Thus the band topology of Ag overlayers in these systems is quite insensitive to the electronic and atomic structures of the substrates.     

Al(111)/Al_3Li(111)的界面性质

运用基于第一性原理的平面波贋势法,计算研究了Al (111)/Al_3Li (111)的界面性质.结果表明:Al (111)/Al_3Li (111)的界面具有三种原子配位关系结构,其中界面处仍保持与基体Al一致的三明治堆垛构型的界面稳定性最好.计算表明,该结构界面最薄弱层,位于Al_3Li (111)内,其分离功最小(约1.53 J/m~2),强度最弱,而基体Al和Al_3Li内部的强度随着到界面距离的增大而逐渐增强.     

Two-photon photoemission from Ni (1 1 0) and (1 1 1) surfaces

Photoemission was observed when the samples were irradiated with photons in the energy range from 2.5 to 3.3 eV from a tunable dye laser with an intensity of 10⁸Wcm^?2. The emission shows a quadratic intensity dependence. The variation with angle of incidence and polarization is different for the two surfaces. The result obtained from the (1 1 0) surface is discussed with help of the band structure as a two-photon surface photoelectric effect.     

Structure of the laser annealed Si(1 1 1)-(1 × 1) surface

LEED analysis of the laser annealed Si(1 1 1)-(1 × 1) surface shows that a model with a graphite-like top double layer of atoms with a spacing of 2.95±0.02 Å from the second double layer describes the LEED data as well as the Zehner model, but involves large displacements of the atoms normal to the surface as required by ion scattering results. It is suggested that this model provides a natural interpretation of the low energy He atom scattering data for the Si(1 1 1)-(7 × 7) surface.     

Optical-Optical Double Resonance Spectroscopy of the H1(u)((3)P(1))-A(3)Pi(1u)-X(1)Sigma(+)(g) Transition of I(2)

We report the analysis of the H1(u)((3)P(1)) state of I(2) by optical-optical double resonance. This state lies in the second tier of ion-pair states and its observation was achieved by using the (1 + 2) photoexcitation sequence using the A(3)Pi(1u) state as an intermediate. The molecular parameters were obtained from data for 0 相似文献   

Theoretical Study of the Collision-Induced Double Transition CO(2) (nu(3) = 1) + N(2) (nu(1) = 1) <-- CO(2) (nu(3) = 0) + N(2) (nu(1) = 0) at 296 K

A procedure is presented for the calculation of the double vibrational collision-induced absorption CO(2) (nu(3) = 1) + N(2) (nu(1) = 1) <-- CO(2) (nu(3) = 0) + N(2) (nu(1) = 0) on the basis of quantum lineshapes computed using an isotropic potential and dipole-induced dipole functions. The linestrengths and energies of the vibration-rotation transitions are treated explicitly for N(2), utilizing the HITRAN database for CO(2). The theoretical absorption profile is compared to recent experimental results. By narrowing the width of the individual lines contributing to the overall absorption profile relative to their values determined for N(2)-N(2) collision-induced absorption, excellent agreement between theory and experiment is obtained. Copyright 2000 Academic Press.     

Discrete Dynamical Systems with W(A (1) m−1 × A (1) n−1) Symmetry

We give a birational realization of affine Weyl group of type A ⁽¹⁾ _m–1 × A ⁽¹⁾ _n–1. We apply this representation to construct some discrete integrable systems and discrete Painlevé equations. Our construction has a combinatorial counterpart through the ultra-discretization procedure.     

Experimental determination of the helium 2(3)P(1)-1(1)S0 transition rate

We present the first experimental determination of the 2(3)P(1)-1(1)S0 transition rate in helium and compare this measurement with theoretical quantum-electrodynamic predictions. The experiment exploits the very long (approximately 1 minute) confinement times obtained for atoms magneto-optically trapped in an apparatus used to create a Bose-Einstein condensate of metastable (2(3)S1) helium. The 2(3)P(1)-1(1)S0 transition rate is measured directly from the decay rate of the cold atomic cloud following 1083 nm laser excitation from the 2(3)S1 to the 2(3)P1 state, and from accurate knowledge of the 2(3)P1 population. The value obtained is 177+/-8 s(-1), which agrees very well with theoretical predictions, and has an accuracy that compares favorably with measurements for the same transition in heliumlike ions higher in the isoelectronic sequence.