| 高压烧结制备Tb掺杂n型(Bi1–xTbx)2(Te0.9Se0.1)3合金及其微结构和热电性能 |
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| 引用本文： | 邹平,吕丹,徐桂英.高压烧结制备Tb掺杂n型(Bi1–xTbx)2(Te0.9Se0.1)3合金及其微结构和热电性能[J].物理学报,2020(5):182-189. |
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| 作者姓名： | 邹平 吕丹 徐桂英 |
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| 作者单位： | 贵州民族大学材料科学与工程学院;北京科技大学材料科学与工程学院 |
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| 基金项目： | 贵州省自然科学基金(批准号:20191168);贵州省教育厅青年基金(批准号:2016157)资助的课题~~ |
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| 摘 要： | 采用高压烧结技术制备了稀土元素Tb掺杂的n型Bi2Te2.7Se0.3基纳米晶块体热电材料.将高压烧结成型的样品于633 K真空退火36 h.研究了Tb掺杂量对样品的晶体结构和热电性能的影响.结果表明,高压烧结制备的样品为纳米结构, Tb掺杂使样品的晶胞体积变大,功率因子增大,热导率降低,从而使ZT值提高.Tb掺杂量为x=0.004是最优的掺杂量,该掺杂量的高压烧结样品经退火处理后,于373 K时ZT值达到最大为0.99,并且在323-473 K范围内, ZT值均大于0.8,这对用于温差发电领域具有重要意义.
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| 关 键 词： | 高压烧结 Tb掺杂 n型Bi2Te2.7Se0.3 热电性能 |
Microstructure and thermoelectric property of(Bi1–xTbx)2(Te0.9Se0.1)3 fabricated by high pressure sintering technique |
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| Zou Ping,LüDan,Xu Gui-Ying.Microstructure and thermoelectric property of(Bi1–xTbx)2(Te0.9Se0.1)3 fabricated by high pressure sintering technique[J].Acta Physica Sinica,2020(5):182-189. |
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| Authors: | Zou Ping LüDan Xu Gui-Ying |
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| Affiliation: | (School of Materials Science and Engineering,Guizhou Minzu University,Guiyang 550025,China;School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China) |
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| Abstract: | Nanocrystalline bulk materials n-type(Bi1–x Tbx)2(Te0.9 Se0.1)3(x = 0, 0.002, 0.004, 0.008) are fabricated by high pressure sintering(HPS) technique. The HPS samples are then annealed for 36 h in a vacuum at 633 K.The phase compositions and crystal structure of HPS sample are analyzed by X-ray diffraction. The microscopic morphology of HPS sample is observed by field-emission scanning electron microscopy. The electric conductivity, Seebeck coefficient, and thermal conductivity of the HPS sample and annealed sample are measured in a temperature range from room temperature to 473 K. The effects of Tb content on crystal structure and thermoelectric properties of the sample are systematically studied. The results show that HPS sample consists of nanoparticles. With the increase of content of Tb, the cell volume increases. Besides, the power factor increases but thermal conductivity decreases through doping Tb, thus the optimal figure of merit(ZT) value increases. The Tb doping amount of x = 0.004 is an optimal doping amount. At this doping amount,the maximum ZT of 0.29 is achieved, which is enhanced by 32% compared with the ZT value of undoped sample. The thermoelectric performance can be improved significantly by annealing. The thermal conductivity of the annealed sample with x = 0.004 is 0.9 W·m^–1·K^–1 at 373 K, decreased by 23% compared with the thermal conductivity of HPS sample. Consequently, the ZT value of annealed sample is significantly higher than that of HPS sample. The maximum thermoelectric ZT of 0.99 is achieved for annealed sample with x =0.004 at 373 K.Furthermore, it is worthwhile to note that this annealed sample possesses a ZT value larger than 0.8 when the temperature is higher than 323 K. |
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| Keywords: | high pressure sintering Tb-doped n-type Bi2Te2 7Se0 3 thermoelectric properties |
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