不同覆盖度下Li原子在Si(001)表面上的吸附构型和电子结构

采用基于赝势平面波基组的密度泛函理论, 对不同Li原子覆盖度下Li/Si(001)体系的吸附构型、电子结构以及吸附Li原子对表面性质的影响进行了系统研究. 计算结果表明, 在所考察的覆盖度范围内, Li原子倾向于吸附在相邻两个Si-Si二聚体之间各种对称性较高的空穴位, 其中覆盖度为0.75 ML(monolayer)时具有最小的平均吸附能. 由能带结构分析结果可知, 随着覆盖度的增大, Si(001)表面存在由半导体→导体→半导体的变化过程. 在覆盖度为1.00 ML时, 由于表层二聚体均受到显著破坏, 使得体系带隙明显增大. 吸附后, 有较多电子从Li原子转移到底物, 导致Si(001)表面功函显著下降, 并随着覆盖度的增加表面功函呈现振荡变化. 此外, 从热力学稳定性角度上看, 覆盖度为0.75 ML的Li/Si(001)表面较难形成.     

Oxidation of alkylsilane-based monolayers on gold

The oxidation of alkylsilane monolayers on Au has been studied by X-ray photoelectron spectroscopy, reflection-absorption infrared spectroscopy, contact-angle measurements, and scanning tunneling microscopy. Exposure of the monolayers at 298 K to pure O(2) or H(2)O (>5 x 10(-5) Torr and >150 000 L) does not cause oxidation. Ambient atmosphere only causes oxidation if direct sight lines are maintained to the sample. Ozone exposure results in rapid monolayer oxidation. Oxidation initially occurs only at the Si atom, resulting in formation of a cross-linked siloxane monolayer that retains alkyl surface termination. Prolonged ozone exposures result in the oxidation and subsequent loss of the alkyl chain.     

Dynamic in situ characterization of organic monolayer formation via a Novel substrate-mediated mechanism

Ultrahigh vacuum scanning tunneling microscopy data investigating octylsilane (C8H17SiH3) monolayer pattern formation on Au(111) are presented. The irregular monolayer pattern exhibits a 60 A length scale. Formation of the octylsilane monolayer relaxes the Au(111) 23 x square root3 surface reconstruction and ejects surface Au atoms. Au adatom diffusion epitaxially extends the Au(111) crystal lattice via step edge growth and island formation. The chemisorbed monolayer covers the entire Au surface at saturation exposure. Theoretical and experimental data suggest the presence of two octylsilane molecular adsorption phases: an atop site yielding a pentacoordinate Si atom and a surface vacancy site yielding a tetracoordinate Si atom. Theoretical simulations investigating two-phase monolayer self-assembly dynamics on a solid surface suggest pattern formation results from strain-induced spinodal decomposition of the two adsorption phases. Collectively, the theoretical and experimental data indicate octylsilane monolayer pattern formation is a result of interfacial Au-Si interactions and the alkyl chains play a negligible role in the monolayer pattern formation mechanism.     

Passive and active oxidation of Si(100) by atomic oxygen: a theoretical study of possible reaction mechanisms

Reaction mechanisms for oxidation of the Si(100) surface by atomic oxygen were studied with high-level quantum mechanical methods in combination with a hybrid QM/MM (Quantum mechanics/Molecular Mechanics) method. Consistent with previous experimental and theoretical results, three structures, "back-bond", "on-dimer", and "dimer-bridge", are found to be the most stable initial surface products for O adsorption (and in the formation of SiO(2) films, i.e., passive oxidation). All of these structures have significant diradical character. In particular, the "dimer-bridge" is a singlet diradical. Although the ground state of the separated reactants, O+Si(100), is a triplet, once the O atom makes a chemical bond with the surface, the singlet potential energy surface is the ground state. With mild activation energy, these three surface products can be interconverted, illustrating the possibility of the thermal redistribution among the initial surface products. Two channels for SiO desorption (leading to etching, i.e., active oxidation) have been found, both of which start from the back-bond structure. These are referred to as the silicon-first (SF) and oxygen-first (OF) mechanisms. Both mechanisms require an 89.8 kcal/mol desorption barrier, in good agreement with the experimental estimates of 80-90 kcal/mol. "Secondary etching" channels occurring after initial etching may account for other lower experimental desorption barriers. The calculated 52.2 kcal/mol desorption barrier for one such secondary etching channel suggests that the great variation in reported experimental barriers for active oxidation may be due to these different active oxidation channels.     

Chemical imaging of terrace-based active sites on gold

Scanning tunneling microscopy data of a mixed monolayer comprised of a 40:60 ratio of H8Si8O12 and C6H13-H7Si8O12 clusters on gold are presented. The images display a composite monolayer surface with well-defined domain regions of the individual components. Holes present at face-centered cubic (fcc) sites of the starting Au/H7Si8O12 adsorbate layer indicate the location of active sites for impinging C6H13-H7Si8O12 clusters. Adsorption of a C6H13-H7Si8O12 cluster likely yields a mobile hydrogen atom available to recombine with and desorb an adjacent H8Si8O12 cluster. Hydrogen atom diffusion along substrate [121] directions is the proposed pattern formation mechanism of the mixed monolayer. Imaging of the spherosiloxane cluster domains identifies a novel terrace-based active site located in the fcc regions of the Au(111) 23 x square root3 surface reconstruction.     

Single P and As dopants in the Si(001) surface

Using first-principles density functional theory, we discuss doping of the Si(001) surface by a single substitutional phosphorus or arsenic atom. We show that there are two competing atomic structures for isolated Si-P and Si-As heterodimers, and that the donor electron is delocalized over the surface. We also show that the Si atom dangling bond of one of these heterodimer structures can be progressively charged by additional electrons. It is predicted that surface charge accumulation as a result of tip-induced band bending leads to structural and electronic changes of the Si-P and Si-As heterodimers which could be observed experimentally. Scanning tunneling microscopy (STM) measurements of the Si-P heterodimer on a n-type Si(001) surface reveal structural characteristics and a bias-voltage dependent appearance, consistent with these predictions. STM measurements for the As:Si(001) system are predicted to exhibit similar behavior to P:Si(001).     

First-principles study of the adsorption of cesium on Si(001)(2 x 1) surface

First-principles calculations based on density functional theory-generalized gradient approximation method have been performed on cesium adsorption on Si(001)(2 x 1) surface. The optimized geometries and adsorption energies have been obtained and the preferred binding sites have been determined for the coverage (Theta) of one monolayer and half a monolayer. At Theta = 0.5 ML the most stable adsorption site is shown to be T3 site. At Theta = 1 ML two Cs atoms are adsorbed at HH and T3 sites, respectively. It was found that the saturation coverage of Cs for the Si(001)(2 x 1)-Cs surface is one monolayer instead of half a monolayer. This finding supports the majority of experimental observations but does not support recent coaxial impact collision ion scattering spectroscopy investigations [Surf. Sci. 531, L340 (2003)] and He(+) Rutherford backscattering spectroscopy studies [Phys. Rev. B 62, 4545 (2000)]. Mulliken charge and overlap population analysis showed that the Cs-Si bond is indeed ionic rather than polarized covalent as generally assumed for alkali metal (AM) on Si(001)(2 x 1) surface. Geometrical structure analysis seems to have limitations in determining the nature of AM-substrate bond. We also found that the silicon surface is metallic and semiconducting for the coverages of 0.5 and 1 ML, respectively.     

Calculation of inelastic helium atom scattering from H2/NaCl(001)

The one-phonon inelastic low energy helium atom scattering theory is adapted to cases where the target monolayer is a p(1 × 1) commensurate square lattice. Experimental data for para-H(2)/NaCl(001) are re-analyzed and the relative intensities of energy loss peaks in the range 6 to 9 meV are determined. The case of the H(2)/NaCl(001) monolayer for 26 meV scattering energy is computationally challenging and difficult because it has a much more corrugated surface than those in the previous applications for triangular lattices. This requires a large number of coupled channels for convergence in the wave-packet-scattering calculation and a long series of Fourier amplitudes to represent the helium-target potential energy surface. A modified series is constructed in which a truncated Fourier expansion of the potential is constrained to give the exact value of the potential at some key points and which mimics the potential with fewer Fourier amplitudes. The shear horizontal phonon mode is again accessed by the helium scattering for small misalignment of the scattering plane relative to symmetry axes of the monolayer. For 1° misalignment, the calculated intensity of the longitudinal acoustic phonon mode frequently is higher than that of the shear horizontal phonon mode in contrast to what was found at scattering energies near 10 meV for triangular lattices of Ar, Kr, and Xe on Pt(111).     

Structural determination of the low-coverage phase of Al on Si(001) surface

The atomic structure of Al layer on Si(001)-(2 x 1) surface has been studied by coaxial impact collision ion scattering spectroscopy. When 0.5 monolayer (ML) of Al atoms are adsorbed on Si(001) at room temperature, it is found that Al adatoms are dimerized and Al ad-dimers are oriented parallel to the underlying Si dimers at the position of centering T3 site with a height of 1.02 Angstroms from the first layer of Si(001). The bond length of the Al dimer is 2.67 Angstroms. With increasing Al coverage up to one ML, Al ad-dimers still occupied near T3 site and the next favorable site is near HH site.     

Layer-by-layer assembly of thiol-capped au nanoparticles on a water surface and their deposition on H-terminated Si(001) by the Langmuir-Blodgett method

A monolayer of dodecanethiol-encapsulated Au nanoparticles when compressed laterally transforms into layer-by-layer assemblies on water surface. These layer-by-layer assemblies of Au nanoparticles have been deposited on H-terminated Si(001) substrates by using one down-up cycle (two strokes) in the Langmuir-Blodgett (LB) method. The transformation from monolayer to layer-by-layer assembly on a water surface is irreversible; i.e., if the compressed film is decompressed the layer-by-layer structure cannot regenerate the monolayer structure. Unlike layer-by-layer growth, only odd numbers of layers grow from the monolayer on the H-terminated Si(001) substrates by using different numbers of down-up cycles. Z-type LB deposition occurs only in the first down-up cycle of the hydrophobic substrate, whereas Y-type LB deposition takes place in the successive cycles. Such layer-by-layer assemblies of Au nanoparticles, which are made on bare silicon surfaces and where thickness can be controlled at the nanoscale level, are very promising for their novel applications in the field of nanoscience.     

Reduction of the (001) surface of gamma-V2O5 compared to alpha-V2O5

The defect-free gamma-V(2)O(5)(001) surface and ordered structures of oxygen vacancies have been studied for a wide range of defect concentrations, Theta ((1)/(6) monolayer (ML) < or = Theta < or = 1 ML), combining density functional theory and statistical thermodynamics. The gamma polymorph of V(2)O(5) is characterized by two structurally different vanadium sites, V(A) and V(B). The V(A) sites having a weaker bond to an adjacent crystal layer are easier to reduce. Up to (1)/(2) ML, the V(A) defect structures with defects aligned along the [010] direction are increasingly more stable as in alpha-V(2)O(5)(001). At higher defect concentrations, the different coordination of the V(B) vanadium atoms at the gamma-V(2)O(5) surface causes an increase in the vacancy formation energy of approximately 0.8 eV/atom at Theta = 1.0 compared to Theta = (1)/(2). For alpha-V(2)O(5), this increase amounts to 0.2 eV/atom only. Under conditions (low oxygen partial pressures and high temperatures) at which the alpha-V(2)O(5)(001) surface would be fully reduced, the gamma-V(2)O(5)(001) surface is only partially reduced. The presence of surface vanadyl oxygen groups at V(B) sites may change the surface reactivity compared to that of alpha-V(2)O(5)(001).     

High-resolution X-ray photoelectron spectroscopic studies of alkylated silicon(111) surfaces

Hydrogen-terminated, chlorine-terminated, and alkyl-terminated crystalline Si(111) surfaces have been characterized using high-resolution, soft X-ray photoelectron spectroscopy from a synchrotron radiation source. The H-terminated Si(111) surface displayed a Si 2p(3/2) peak at a binding energy 0.15 eV higher than the bulk Si 2p(3/2) peak. The integrated area of this shifted peak corresponded to one equivalent monolayer, consistent with the assignment of this peak to surficial Si-H moieties. Chlorinated Si surfaces prepared by exposure of H-terminated Si to PCl5 in chlorobenzene exhibited a Si 2p(3/2) peak at a binding energy of 0.83 eV above the bulk Si peak. This higher-binding-energy peak was assigned to Si-Cl species and had an integrated area corresponding to 0.99 of an equivalent monolayer on the Si(111) surface. Little dichloride and no trichloride Si 2p signals were detected on these surfaces. Silicon(111) surfaces alkylated with CnH(2n+1)- (n = 1 or 2) or C6H5CH2- groups were prepared by exposing the Cl-terminated Si surface to an alkylmagnesium halide reagent. Methyl-terminated Si(111) surfaces prepared in this fashion exhibited a Si 2p(3/2) signal at a binding energy of 0.34 eV above the bulk Si 2p(3/2) peak, with an area corresponding to 0.85 of a Si(111) monolayer. Ethyl- and C6H5CH2-terminated Si(111) surfaces showed no evidence of either residual Cl or oxidized Si and exhibited a Si 2p(3/2) peak approximately 0.20 eV higher in energy than the bulk Si 2p(3/2) peak. This feature had an integrated area of approximately 1 monolayer. This positively shifted Si 2p(3/2) peak is consistent with the presence of Si-C and Si-H surface functionalities on such surfaces. The SXPS data indicate that functionalization by the two-step chlorination/alkylation process proceeds cleanly to produce oxide-free Si surfaces terminated with the chosen alkyl group.     

Self-directed growth of benzonitrile line on H-terminated Si(001) surface

Using first-principles density-functional calculations we predict a self-directed growth of benzonitrile molecular line on a H-terminated Si(001) surface. The C[triple bond]N bond of benzonitrile reacts with a single Si dangling bond which can be generated by the removal of a H atom, forming one Si-N bond and one C radical. Subsequently, the produced C radical can be stabilized by abstracting a H atom from a neighboring Si dimer, creating another H-empty site. This H-abstraction process whose activation barrier is 0.65 eV sets off a chain reaction to grow one-dimensional benzonitrile line along the Si dimer row. Our calculated energy profile for formation of the benzonitrile line shows its relatively easier formation compared with previously reported styrene and vinylferrocene lines.     

Two dissociation pathways of water and ammonia on the Si(001) surface

Using first-principles density-functional calculations, we investigated two competing pathways for the dissociation of water and ammonia on a Si(001) surface. For both systems, we found that, in addition to the conventionally accepted intradimer transfer of the H atom, the interdimer transfer of the H atom can be equally probable with the same reaction mechanism. Our analysis shows that the two dissociation pathways occur through the Lewis acid-base reaction between the partially positive H ion and the electron-abundant up atom of the buckled Si dimer. The result of the interdimer H transfer not only supports a recently proposed model for C-defect on Si(001) but also corresponds to the recent scanning tunneling microscopy data of ammonia dissociation on Si(001).     

Interactions between radical growth precursors on plasma-deposited silicon thin-film surfaces

We present a detailed analysis of the interactions between growth precursors, SiH3 radicals, on surfaces of silicon thin films. The analysis is based on a synergistic combination of density functional theory calculations on the hydrogen-terminated Si(001)-(2x1) surface and molecular-dynamics (MD) simulations of film growth on surfaces of MD-generated hydrogenated amorphous silicon (a-Si:H) thin films. In particular, the authors find that two interacting growth precursors may either form disilane (Si2H6) and desorb from the surface, or disproportionate, resulting in the formation of a surface dihydride (adsorbed SiH2 species) and gas-phase silane (SiH4). The reaction barrier for disilane formation is found to be strongly dependent on the local chemical environment on the silicon surface and reduces (or vanishes) if one/both of the interacting precursors is/are in a "fast diffusing state," i.e., attached to fivefold coordinated surface Si atoms. Finally, activation energy barriers in excess of 1 eV are obtained for two chemisorbed (i.e., bonded to a fourfold coordinated surface Si atom) SiH3 radicals. Activation energy barriers for disproportionation follow the same tendency, though, in most cases, higher barriers are obtained compared to disilane formation reactions starting from the same initial configuration. MD simulations confirm that disilane formation and disproportionation reactions also occur on a-Si:H growth surfaces, preferentially in configurations where at least one of the SiH3 radicals is in a "diffusive state." Our results are in agreement with experimental observations and results of plasma process simulators showing that the primary source for disilane in low-power plasmas may be the substrate surface.     

Evidence from first principles calculations for a bent CO2 intermediate in the oxidation of carbon monoxide on the Cu (110) surface

We have carried out first principles plane wave density-functional theory calculations to study the adsorption of CO molecule on a clean and unreconstructed Cu (110) surface at 1/12 monolayer coverage and have investigated the subsequent oxidation by preadsorbed oxygen atoms. As found experimentally, the CO adsorbs perpendicular to the surface plane through the carbon atom; the top site was found to be the most favorable position for CO adsorption although the short-bridge site is only slightly less stable. Surprisingly, for a sparely oxidized surface with O atoms adsorbed in hollow sites the coadsorption energy is slightly negative for only the above two CO sites which have therefore been used as starting points to explore the energy surface of the oxidation reaction. We have confirmed the existence of bent CO(2) surface intermediate as previously suggested from experimental studies. Using the nudged elastic band method, we have characterized a two step reaction which involves the formation of this intermediate. The results suggest that the rate determining step of the oxidation reaction is the formation of the intermediate and the energy barrier (200 meV) is close to although smaller than experimentally estimated values.     

Theoretical study of the reaction of acrylonitrile on Si(001)

Two recent experiments for adsorbed acrylonitrile on the Si(001) surface reported different adsorption structures at 110 and 300 K. We investigate the reaction of acrylonitrile on Si(001) by first-principles density-functional calculations. We find that the so-called [4+2] structure in which acrylonitrile resides between two dimer rows is not only thermodynamically favored over other structural models but also easily formed via a precursor where the N atom of acrylonitrile is attached to the down atom of the Si dimer. The additional initial-state theory calculation for the C 1s core levels of adsorbed acrylonitrile provides an interpretation for the observed low- and room-temperature adsorption configurations in terms of the precursor and [4+2] structures, respectively.     

Molecular simulation of alkyl monolayers on the Si(111)surface

The structure of twelve-carbon monolayers on the H-terminated Si(111) surface is investigated by molecular simulation method. The best substitution percent on Si(111) surface obtained via molecular mechanics calculation is equal to 50%, and the (8×8) simulated cell can be used to depict the structure of alkyl monolayer on Si surface. After two-dimensional cell containing alkyl chains and four-layer Si(111) crystal at the substitution 50% is constructed, the densely packed and well-ordered monolayer on Si(111) surface can be shown through energy minimization in the suitable-size simulation cell. These simulation results are in good agreement with the experiments. These conclusions show that molecular simulation can provide otherwise inaccessible mesoscopic information at the molecular level, and can be considered as an adjunct to experiments.     

Molecular simulation of alkyl monolayers on the Si(lll) surface

The structure of twelve-carbon monolayers on the H-terminated Si(111) surface is investigated by molecular simulation method. The best substitution percent on Si(111) surface obtained via molecular mechanics calculation is equal to 50%, and the (8 ε 8) simulated cell can be used to depict the structure of alkyl monolayer on Si surface. After two-dimensional cell containing alkyl chains and four-layer Si(111) crystal at the substitution 50% is constructed, the densely packed and well-ordered monolayer on Si(111) surface can be shown through energy minimization in the suitable-size simulation cell. These simulation results are in good agreement with the experiments. These conclusions show that molecular simulation can provide otherwise inaccessible mesoscopic information at the molecular level, and can be considered as an adjunct to experiments.     

Molecular simulation of alkyl monolayers on the Si(111) surface YUAN

The preparation of monolayers on silicon surface is of growing interest for potential applica-tions in biosensor or semiconductor technology[1—5]. The alkyl modified Si(111) surfaces[6—10] can be obtained using the thermal, catalyzed, or photochemical reaction of hydrogen-terminated sili-con with alkenes, Grignard reagents, and so on. At the same time, the monolayer properties on Si(111) surface have been studied by a variety of experimental methods[8—10] such as X-ray photo-electron spect…