硫增感AgBr I T颗粒乳剂光电子行为研究

本文利用微波吸收相敏检测技术,同时获得了硫增感AgBrIT颗粒乳剂,在不同增感条件下自由光电子和浅俘获光电子的时间衰减曲线,分析了不同的硫增感产物的陷阱效应.结果表明:开始时,增感产物起电子陷阱作用,至45 min时,浅电子陷阱作用最佳.如增感时间进一步增加,硫增感产物将变为深电子陷阱.本文还讨论了浅电子陷阱中浅俘获光电子衰减时间与阱深的依存关系.     

纳米硫化铅增感的溴化银微晶中光电子衰减特性研究

采用纳米硫化铅作为增感剂对边长为0.8μm的溴化银立方体颗粒进行了化学增感.利用微弱信号的微波吸收相敏检测技术,在超短脉冲激光作用下,获得了立方体溴化银乳剂中自由光电子和浅束缚光电子随增感时间变化的衰减曲线.通过测量溴化银光作用过程的时间分辨谱,讨论了卤化银晶体中电子陷阱对光电子运动行为的影响,分析了电子陷阱效应同增感时间之间的关系以及两个一级衰减区间寿命值同增感时间的关系.通过未增感样品与增感样品的衰减曲线对比,得到了在此实验条件下的最佳增感时间为60 min.     

溴碘化银核壳乳剂中电子的捕获和复合

本文应用双注仪制备了在核表面进行不同程度还原增感和一系列溴碘化银核壳乳剂,在不同条件下测定了核表面形成的不同还原增感中心对乳剂微晶光电子衰减动力学及发光光谱的影响。结果表明:在一定增感温度和时间条件下,当Na₂SO₃用量低于5.4mg/molAg时光电子衰减动力学为二级反应,而当Na₂SO₃用量超过27mg/molAg时,增感中心一部分作为空穴陷阱,另一部分作为电子陷阱,光电子衰减速率决定于电子的捕获和复合,光电了衰减动力学为一复杂过程。低温发光光谱随不同增感程度的改变证明:还原增感中心不是发光中心。     

卤化银微晶体的光电子行为

卤化银乳剂微晶体的光电子行为是影响照相感光度的重要因素,本文就光电子研究方法、光电子衰减、电子陷阱、本征与外来带电中心对光电子衰减与寿命的影响以及光电子行为与其它物理性质的关系等方面加以综述.     

染料增感AgBr乳剂的光电子衰减动力学研究

本工作利用微波吸收薄膜介电谱测量技术,测量了菁染料光谱增感后的AgBr晶体乳剂在脉冲激光曝光后产生的光电子衰减时间特性,分析了不同类型的染料及其增感条件对材料光电子时间特性的影响关系.通过比较增感后的T 颗粒乳剂和立方体乳剂的光电子衰减特性,实验验证了吸附在T 颗粒(111)晶面上的染料比吸附在立方体(100)晶面上的染料更有效、更有助于形成潜影的论据.     

阴阳离子菁染料超快荧光动力学特性研究

采用飞秒荧光上转换技术,研究了阴阳离子菁染料及对应的阴离子和阳离子菁染料吸附在立方型和T型溴碘化银表面上形成J-聚集体的荧光衰减时间分辨特性,分析了几种菁染料增感体系的超快电子转移动力学过程及其对增感效率的影响.通过比较几种菁染料增感体系的荧光衰减特性,两种阴阳离子染料要明显快于阴离子染料、阳离子染料及二者的加合,说明阴阳离子染料聚集体到溴碘化银的电子注入速率较快,增感效果更好.对两种阴阳离子染料聚集体荧光衰减特性的比较,可以看出染料在T型颗粒溴碘化银上形成聚集体的荧光寿命更短,因而对T型颗粒的增感效果更好.染料Dye2的荧光衰减要快于染料Dye1,说明染料Dye2到溴碘化银的电子注入速率更快,增感效率更高.     

曝光强度对卤化银微晶中载流子行为及其陷阱效应的影响

针对卤化银感光材料潜影形成过程中光作用动力学问题,分析了曝光强度对光生载流子行为和电子陷阱效应的影响,认为伴随着曝光强度的增加,影响光电子衰减的因素由电子陷阱起主要作用演化到电子陷阱和复合中心共同起作用进而演化到复合中心起主要作用.     

立方体溴化银颗粒光谱增感的电子转移超快动力学研究

本文利用皮秒时间分辨条纹相机技术检测了3种染料在立方颗粒溴化银上吸附后形成聚集体的荧光光谱,分析了3种染料在不同染料浓度下对染料聚集体到溴化银导带的超快电子转移过程的影响,进而分析其对增感效率的影响关系,并探讨了增感过程的微观机理.实验结果表明,荧光衰减的动力学曲线与一个双指数函数拟合得相当好,存在一快一慢两个衰减成分,快衰减成分占拟合较大比例,表明其源于与荧光衰减相竞争的从激发态染料聚集体到AgBr导带的电子转移.光致电子转移的速率及增感效率随着染料相对浓度的增加表现出一定的变化趋势,染料浓度增加,增感效率减小.     

钙离子对卤化银乳剂化学增感和光谱增感的影响

本文通过控制乳剂中一系列不同的钙离子浓度(4.0～80×10^-3mol Ca²⁺/mol AgX),研究了化学增感时间对钙离子浓度的依赖性,测定了相应的感光特性,结果表明,乳剂中的钙离子在不影响最佳感光度的前提下,可有效地抑制灰雾并延缓化学增感过程,延长化学成熟时间。 经感红染料光谱增感后,测定了染料的相对增感倍率,本征及感红光谱感光度,研究了它们对轧剂中钙离子浓度的依赖关系。以卤化银乳剂对染料的吸附,对光的吸收以及Dember效应的实验结果为佐证,说明钙离子在光谱增感的电子转移过程中,起着电子陷阱的作用,从而抑制感红感光度的增感;与此同时,钙离子又抑制染料对本征感光度的减感,这可能是由于钙离子的存在阻碍了染料正空穴对卤化银本征潜影的氧化,从而保护了部分潜影免受染料正空穴的袭击。     

辐射陷阱效应对钨酸镧晶体中Yb3+光谱性质的影响

采用提拉法获得了Yb3 :La2(WO4)2晶体,并测量了该晶体的室温吸收光谱.为了分析辐射陷阱效应对Yb3 光谱性质的影响,分别测量了块状和粉末状晶体样品的荧光光谱和荧光衰减曲线.研究结果表明:辐射陷阱效应导致钨酸镧晶体中Yb3 离子的荧光光谱、受激发射截面和荧光寿命等光谱性质发生了明显的变化.     

Angle and spin resolved Auger and photoelectron spectroscopy on Rb-layers by means of circularly polarized VUV radiation

Normal incidence circularly polarized VUV radiation with energies around 23 eV creates spin polarized photoelectrons from thick layers of Rb on Pt(111) and thus excites oriented 4p hole states. The preferential spin direction of the Auger electrons and its dependence upon the emission angle has been measured and is compared with the corresponding angular dependence of the primary photoelectron spin polarization also measured. Since the CVV Auger decay relates to as ² pair of valence electrons, the cross comparison of results for photoelectrons and Auger electrons studies the questions on whether photoemission and Auger decay occur in sequence, assuming an independent two step model, and whether the valences-electrons couple to a singlet state configuration.     

Low temperature kinetics and energetics of the electron and hole traps in irradiated TiO2 nanoparticles as revealed by EPR spectroscopy

We have monitored exclusively the dynamics of photogenerated charge carriers trapping in deep traps and trapped electron-hole recombination in UV irradiated anatase TiO2 powders by electron paramagnetic resonance (EPR) spectroscopy at 10 K. The results reveal that the strategy of using low temperatures contributes to the stabilization of the charged pair states for hours by reducing the rate of electron-hole recombination processes. Since only the localized states such as holes trapped at oxygen anions and electrons trapped at coordinatively unsaturated cations are accessible to EPR spectroscopy, the time-dependent population and depopulation of these EPR signals reflect the kinetics and energetics of these trap states. The data support a model of sequential accumulation of deep trap site populations in which the initial fast direct trapping into a deep trap site is followed by slower carrier trap-to-trap hopping until a deep trap is encountered for both photogenerated electrons and holes. Effective modeling of the subsequent decay of trapped-holes is achieved by employing a first-order kinetics, whereas the decay of either surface- or inner-trapped electrons has both a fast and a slow component. The fast component is attributed to a trapped-electron and a free-hole recombination, and the slow component is attributed to trapped electron-hole recombination. The activation energies for the process of diffusion of trapped electrons from their Ti3+ trapping sites are estimated.     

Photoelectron imaging of helium droplets doped with Xe and Kr atoms

Helium droplets doped with Xe and Kr atoms were photoionized by using VUV synchrotron radiation from the Advanced Light Source and the resulting photoelectron images were measured. A wide range of He droplet sizes, photon energies, and dopant pick-up conditions was investigated. Significant ionization of dopants was observed at 21.6 eV, the absorption maximum of 2p (1)P1 electronic excited state of He droplets, indicating an indirect ionization mechanism via excitation transfer. The photoelectron images and spectra reveal multiple photoionization mechanisms and pathways for the photoelectrons to escape the droplet. Specifically, they show sets of sharp peaks assigned to two mechanisms for Penning ionization of the dopant by He* in which the photoelectrons leave the droplet with no detectable energy loss, a broad, intense feature representing electrons that undergo significant energy loss, and a small amount of ultraslow electrons that may result from electron trapping at the droplet surface. The droplet-size dependence of the broad, intense feature suggests the development of the conduction band edge in the largest droplets seen here ((N) approximately 250,000).     

Computer simulation of excess electron capture in irradiated media

A stochastic simulation technique has been proposed to study the electron localization in pre-existing traps in irradiated media. The electron capture by a trap was modelled by the multiphonon mode of dissipation of excess electron energy. The different capture probabilities were assigned to the traps of different depth. The simulation is performed in two stages. The first stage includes two competitive processes: the geminate recombination of electron with the positive parent ion and the electron capture by the pre-existing traps. In the second stage the occupied trap relaxation is simulated.As results of the simulation, the kinetics of the electron recombination and trapping as well as the time-dependent distributions of energy of the trapped electrons have been obtained for a model polar system at low temperature. The latter distribution can be converted into the optical absorption spectrum of trapped electrons. Thus, the proposed simulation method opens new possibilities for studying the primary electron localization in irradiated condensed media.     

Femtosecond dynamics of isolated phenylcarbenes

Understanding the primary photophysical processes in molecules is essential for interpreting their photochemistry, because molecules rarely react from the initially excited electronic state. In this study the ultrafast excited-state dynamics of chlorophenylcarbene (CPC) and trifluoromethylphenylcarbene (TFPC), two species that are considered as models for carbene dynamics, were investigated by femtosecond time-resolved pump probe spectroscopy in the gas phase. Their dynamics was followed in real time by time-resolved photoionization and photoelectron imaging. CPC was excited at 265 nm into the 3 1A' state, corresponding to excitation from a pi-orbital of the aromatic ring into the LUMO. The LUMO contains a contribution of the p-orbital at the carbene center. Three time constants are apparent in the photoelectron images: A fast decay process with tau1 approximately 40 fs, a second time constant of tau2 approximatley 350 fs, and an additional time constant of tau3 approximately 1 ps. The third time constant is only visible in the time-dependence of low kinetic energy electrons. Due to the dense manifold of excited states between 3.9 and 5 eV, known from ab initio calculations, the recorded time-resolved electron images show broad and unstructured bands. A clear population transfer between the states thus can not directly be observed. The fast deactivation process is linked to either a population transfer between the strongly coupled excited states between 3.9 and 5.0 eV or the movement of the produced wave packet out of the Franck-Condon region. Since the third long time constant is only visible for photoelectrons at low kinetic energy, evidence is given that this time constant corresponds to the lifetime of the lowest excited A 1A' state. The remaining time constant reflects a deactivation of the manifold of states in the range 3.9-5.0 eV down to the A 1A' state.     

Monte‐Carlo simulation of x‐ray photoelectron emission from silver

Silver 3d x‐ray photoelectron spectroscopy (XPS) spectra were simulated with the Monte‐Carlo method using an effective energy‐loss function that was derived from a reflected electron energy‐loss spectroscopy (REELS) analysis based on an extended Landau approach. After confirming that Monte‐Carlo simulation based on the use of the effective energy‐loss function can successfully describe the experimental REELS spectrum and Ag 3d XPS spectrum, we applied Monte‐Carlo simulation to predict the angular distribution of Ag 3d x‐ray photoelectrons for different x‐ray incidence angles and different photoelectron take‐off angles. The experimental photoelectron emission microscope that we are constructing was confirmed as being close to the optimum configuration, in which the x‐ray incident angle as measured from the surface normal direction is 74° and the photoelectron take‐off angle is set normal to the surface. The depth distribution functions of the Ag 3d X‐ray photoelectrons for different energy windows suggest that the photoelectron emission microscope will exhibit greater surface sensitivity for narrower photoelectron energy windows. Copyright © 2003 John Wiley & Sons, Ltd.     

Surface Functionalization of Black Phosphorus with a Highly Reducing Organoruthenium Complex: Interface Properties and Enhanced Photoresponsivity of Photodetectors

In this work, a heterostructure obtained by vacuum evaporation of a strong molecular n-dopant, [RuCp*(mes)]₂, onto black phosphorus (BP) is reported, along with the systematic investigation of the interfacial structure and properties by various in situ characterization techniques. Ultraviolet photoelectron spectra (UPS) showed a large decrease in the work function of BP and a new peak within the bandgap, which is attributed to electron transfer from dopants to the underlying BP. The electrons trapped at the interface act as hole traps and induce photogating effect so that a photodetector based on BP–organoruthenium complex heterostructure demonstrates a photoresponsivity of 5.5 mA W⁻¹ and an EQE of 1.3 % at 515 nm, a tenfold improvement compared to the pristine BP device.