磁场退火对Co基熔体抽拉丝巨磁阻抗效应的影响

对Co基熔体抽拉非晶丝进行了普通炉内退火和不同磁场强度（500 Oe,1600 Oe,4000 Oe）下的横向和纵向磁场退火,利用HP4192阻抗分析仪和Lakeshore7407VSM分析了退火态样品的巨磁阻抗（GMI）效应和软磁性能.研究结果表明,纵向磁场降低了环向各向异性,纵向磁场退火样品GMI效应降低且GMI曲线为单峰,最大阻抗变化率ΔZ/Z为131%,磁场响应灵敏度为7%/Oe;而横向磁场提高了环向畴体积,增加了环向各向异性场,导致退火样品GMI曲线随频率升高由单峰转 关键词： 非晶丝 巨磁阻抗效应 退火     

磁致伸缩材料磁弹性内耗的场依赖特性及其用于磁场传感研究

分析和测试了磁致伸缩材料磁弹性内耗的偏置磁场依赖特性,发现Terfenol-D的品质因数(与内耗的量值成反比)强依赖于偏置磁场.利用磁致伸缩材料磁弹性内耗强依赖于偏置磁场的特性,提出了一种静态和准静态磁场的磁传感器方法,即将磁致伸缩材料与压电变压器单元层叠构建一种复合变压器.分析表明:在谐振状态下,复合变压器的输出电压正比于其品质因数,于是复合变压器的输出电压强依赖于偏置磁场;磁致伸缩材料的ΔE效应对复合变压器输出电压的影响很小.制备Terfenol-D/PZT8复合变压器进行了实验,结果表明,在近谐振状态下,当激励输入电压振幅为0.5V时,复合变压器工作的输出电压对静态磁场的灵敏度达到～5.12mV.Oe-1.     

基于Nyquist图研究铁基非晶薄带巨磁阻抗效应的非线性

测量了铁基非晶薄带巨磁阻抗效应的阻抗实部和虚部并且计算出磁导率的实部和虚部,通过磁导率的非线性解释了巨磁阻抗效应的非线性原因,并且利用Nyquist图推出磁导率等效电路模型,指出磁导率等效电路模型中的LC共振频率是解决磁导率非线性的关键.研究结果表明:在激励电源横向磁化和外加磁场纵向磁化的过程中,非晶薄带磁导率的变化无规则,导致非晶薄带的巨磁阻抗效应呈现非线性变化.当激励频率在5 MHz、纵向磁场发生改变时,磁损耗角依然保持不变,磁导率与纵向磁场的非线性关系转化为磁导率模值与纵向磁场的关系,通过实验数据可以拟合出纵向磁场与磁导率的函数关系.     

非晶和纳米晶软磁丝状样品的环向磁化过程

采用阻抗法测定了不同磁结构的软磁丝状样品(非晶及纳米晶合金)的环向磁导率随环向磁场 强度和频率的变化. 按照Chen等的理论公式计算了样品的环向磁化曲线，结果发现，这一实 验原理公式对具有较大损耗的磁化过程并不适用. 因此，将其发展给出了更一般情况下的理 论公式. 此外，通过分析复数磁导率对环向磁场的依赖关系，确定了两类不同畴结构样品的 不同的环向矫顽力机理. 研究了交流频率对磁化过程的影响. 关键词： 非晶和纳米晶软磁丝 阻抗 环向磁化曲线     

外磁场与带轴夹角对非晶FeSiB/Cu/FeSiB三明治薄带巨磁阻抗特性的影响

采用层间胶合方法制备了淬态非晶FeSiB/Cu/FeSiB三明治薄带,研究了同尺寸单层薄带和三明治薄带的巨磁阻抗(giant magneto-impedance, GMI)随外磁场与带轴夹角β的变化特性.结果表明,FeSiB单层薄带在7.0 MHz最佳响应频率下,GMI仅约30%,外磁场与带轴夹角对单层薄带GMI几乎没有影响;三明治薄带的GMI效应则十分显著,在0.6 MHz最佳响应频率下,纵、横向GMI比分别达到272%和464%, GMI随β的增大而增强;所有β角的三明治薄带GMI曲线都出现各向异性峰,各向异性峰随β的增大而展宽.根据磁畴转动模型推导了薄带横向磁导率与各向异性场及β之间的函数关系式.结果显示,三明治薄带GMI随夹角β变化的特性与理论推算的横向磁导率变化有较好的一致性,而单层薄带则不然.该磁畴转动模型能定性解释三明治薄带GMI随外磁场方向变化特性.     

偏置电压对磁致伸缩/压电层合换能结构磁电性能影响

分析和测试了偏置电压调整时PZT5/Terfenol-D/PZT8层合换能结构磁电性能. 提出了一种磁致伸缩/压电层合磁电换能结构的一阶谐振频率控制方法. 通过改变压电驱动层的直流电压对磁电层合结构的预应变进行改变, 从而调整谐振频率. 分析偏置电压、 应变、 弹性模量、 谐振频率和谐振磁电电压系数之间关系. 分析表明: 在较小应变情况下, 控制电压几乎可以线性调节谐振频率, 而层合结构谐振磁电电压系数几乎与偏置电压无关. 实验研究验证: 理论与实验结果较好吻合. 在-170 V-+170 V的偏置电压时, 谐振频率可以几乎线性调整. 最大频率调整量达到1 kHz, 偏置电压对一阶纵振频率的控制率达到: 2.94 Hz/V. 在偏置磁场为0-225 Oe时, 谐振频率调整量与偏置磁场无关. 偏置磁场会改变谐振磁电电压系数, 在大于178 Oe静态磁场偏置时, 磁电电压系数最大, 达到1.65 V/Oe.     

电沉积复合丝及其巨磁阻抗效应的研究

采用脉冲电沉积工艺在Cu丝上沉积Fe Ni合金镀层 ,成功地制备出巨磁阻抗效应 (GMI)复合丝材料 ,研究了复合丝的磁性能和巨磁阻抗效应 .复合丝外壳磁性镀层软磁性越好 ,巨磁阻抗效应越明显 ,制备的复合丝最高巨磁阻抗效应为 2 7.19% .研究了复合丝阻抗与巨磁阻抗比值GMI随外加磁场的变化 ,其变化曲线的形状受复合丝磁各向异性场的影响 .此外 ,还研究了复合丝巨磁阻抗效应与驱动交变电流频率的关系 ,复合丝Fe17Ni83 样品巨磁阻抗效应的临界频率为 30kHz(GMI为 9.95 % ) ,特征频率为 30 0kHz(GMI为 2 7.19% ) ,截止频率为 10MHz (GMI为 10 .36 % ) .如此低的临界频率和特征频率及较宽的频率段对于实际应用非常有利 .     

FeCuNbSiB对FeNi/PZT复合结构磁电效应的影响

构造了FeCuNbSiB/FeNi/PZT磁电复合结构并与FeNi/PZT复合结构进行了对比研究.分析了高磁导率材料FeCuNbSiB对FeNi磁场的影响机理,研究了FeCuNbSiB/FeNi/PZT三相复合结构的磁电效应.实验表明,在FeNi/PZT两相层合结构中黏接FeCuNbSiB层后:1)最优偏置磁场从200 Oe降低到55 Oe,最大谐振磁电电压系数从1.59 V/Oe增大到2.77 V/Oe;2)在低偏置磁场中,层合结构磁电电压转换系数提高了1.7—7.8倍;3)层合结构的磁电电压对静态磁场 关键词： 层合结构 最优偏置磁场 高磁导率 磁电电压转换系数     

电流焦耳热调控反转型垂直(Co/Pt)n/Co/IrMn纳米多层膜结构的交换偏置效应研究

交换偏置效应影响磁敏传感器中的关键性能参数.在外加磁场辅助下,本文提出一种电流产生的焦耳热调控交换偏置效应的研究方法.通过该方法,系统调控了反转型垂直纳米多层膜结构(Co/Pt)_n/Co/IrMn(简称垂直多层膜结构,n+1是Co层周期数)的面内交换偏置效应,不仅连续改变了交换偏置场H_eb大小,而且实现了H_eb的翻转.在垂直多层膜结构中,如果固定外加磁场H_p(脉冲电流I_DC)后连续改变I_DC(H_p)的大小可以连续调控H_eb的数值;如果固定H_p(I_DC)后同时改变I_DC(H_p)的大小和方向,则在较大I_DC时可实现H_eb的翻转.结果表明,该方法可以用来原位调控磁敏传感器的线性磁场范围和灵敏度等关键性能参数,对磁敏传感器的优化研究具有重要的借鉴意义.     

横向偏置场作用的非晶带巨磁阻抗效应理论

采用多畴结构模型,考虑非晶带具有180°畴壁的磁畴及其两面的偏置磁场方向的不同,根据自由能最小原理,Maxwell方程组及带阻尼项的Landau-Lifshitz方程,建立了非晶态合金带在横向偏置磁场作用下的巨磁阻抗效应的理论计算公式. 提出并采用四状态平均磁导率代替单畴模型获得的磁导率,得到了更符合实际的处于偏置场作用的阻抗随外磁场变化的理论结果. 关键词： 偏置磁场 四状态 多畴结构 巨磁阻抗     

Biased magnetization reversal in bi-phase multilayer microwires

We report on the magnetic behaviour of a novel family of two-magnetic-phase multilayer microwires consisting of: (i) a bistable FeSiB glass-coated amorphous microwire as soft nucleus, and (ii) a polycrystalline CoNi outer microtube as harder layer. Such bi-phase microwires are prepared by combined quenching and drawing plus sputtering and electroplating techniques. The stray field produced by the harder outer layer after premagnetizing it to saturation is used to bias the magnetization reversal process of the soft nucleus via dipolar magnetostatic coupling. A detailed analysis of the asymmetric low-field magnetization reversal process of the soft nucleus is presented together with the study of the fluctuating switching field and its asymmetric behaviour. The study of the domain wall characteristics under the presence of a nucleation coil at one end of the microwire allows us to draw conclusions on the role of the bias field generated by the premagnetized hard outer layer.     

Recent advances in studies of magnetically soft amorphous microwires

In this paper, we present the giant magneto-impedance (GMI) effect (real part of longitudinal impedance, Z, and of the off-diagonal impedance) and hysteretic magnetic properties of amorphous glass-coated microwires with different compositions possessing nearly zero, positive and negative magnetostriction constant and metallic nucleus diameter ranging between 6 and 16 μm. Enhanced soft magnetic properties (low coercivity of about 4 A/m) and high-GMI effect have been observed in Co-rich microwires with vanishing magnetostriction constant. The magnetic anisotropy field of these microwires depends on the ratio between metallic diameter, d and total microwires diameter, D. Stress-sensitive magnetic properties have been obtained in Fe-rich microwires after stress annealing: hysteresis loop stress-annealed (SA) microwires drastically changes under applied stress. A variety of hysteresis loops with different hysteresis loops can be obtained in Fe-rich microwires changing the conditions (time and/or temperature) of the stress annealing. The obtained results allow us to tailor the microwire magnetic properties for magnetic sensors applications through selection of their composition and/or geometry and by thermal treatment.     

Enhancement of GMI effect in magnetic microwires through the relative temperature dependence of magnetization and anisotropy

We present the study of Giant Magneto Impedance (GMI) effect in magnetic microwires with zero magnetostriction. It is shown that the temperature response of GMI effect can be enhanced by 80% through the relative temperature dependence of magnetization and anisotropy. However, such effect appears only for low amplitudes of exciting current that induces exciting magnetic field below the anisotropy field of the wire. On the other hand, when measuring at high exciting current (when the exciting field exceeds the anisotropy field), the GMI response decreases monotonically with temperature.     

Asymmetric impedance in field-annealed Co-based amorphous wires and its bias field dependence

Giant magnetoimpedance (GMI) was measured in Joule heated Co_68.18Fe_4.32Si_12.5B₁₅ amorphous wires. Samples heat treated in open air showed an asymmetric giant magnetoimpedance (AGMI) behaviour. The AGMI profile, measured at selected frequency values and bias circumferential fields, can be related to the exchange bias interaction between the soft magnetic amorphous material and a harder magnetic crystalline phase formed on the surface of the wire. The present data show that AGMI behaviour take place owing to a soft magnetic layer with unidirectional anisotropy that develops in the surface of the wire.     

AC-current-induced magnetization switching in amorphous microwires

We studied the influence of AC current flowing through microwires, on magnetization dynamics. We used a previously developed Sixtus-Tonks modified setup to evaluate the domain wall (DW) velocity within the microwire. However, instead of a magnetizing solenoid, we used a current flowing through the microwire. We observed that the AC current flowing through the annealed Co-rich microwire leads to remagnetization by fast domain wall propagation. The estimated DW velocity was approximately 4.5 km/s, which is similar to and even higher than that reported for the magnetic-field-driven domain wall propagation in Fe- and Co-rich microwires. We measured the DW velocity under tensile stress, and found that the DW velocity decreases under applied stress. An observed DW propagation induced by the current flowing through the microwire is explained considering the influence of an Oersted magnetic field on the outer domain shell. This field has a circular easy magnetization direction and magnetostatic interaction between the outer circumferentially magnetized shell and the inner axially magnetized core.     

One-dimensional AGMI sensor with Co<Subscript>66</Subscript>Fe<Subscript>4</Subscript>Si<Subscript>15</Subscript>B<Subscript>15</Subscript> ribbon as sensing element

A novel asymmetric giant magneto impedance (AGMI) sensor was developed and the performance of the sensor was carefully studied. This one dimensional sensor can be further developed as a two-dimensional compass that can be used for navigational purposes. We used commercial Metglas 2714A ribbon. The sensor uses Co₆₆Fe₄Si₁₅B₁₅ ribbon as a sensing element. The results showed for high sensitivity and resolution. The GMI sensor consists of a crystal oscillator voltage to current converter for providing the current to the sample, a differential amplifier, successive amplifier stages, multiplier, and cascaded low-pass filters. The observed sensitivity was 25 V/Oe. Angle sensitivity was found to be 2 mV/degree. Our sensor showed excellent linearity when compared with previous sensors [13, 14]. These sensors require dc bias coils and two sensor elements to attain good linearity. PACS 85.75.Ss; 85.70.Ay; 85.70.-w; 85.75.-d; 75.30.Gw; 75.50.Kj; 75.90.+w     

Magnetooptical investigation of the micromagnetic structure and magnetization processes in Co69Fe4Si12B15 amorphous microwires

Magnetooptical investigation of the micromagnetic structure of Co₆₉Fe₄Si₁₂B₁₅ amorphous microwires 10–50 μm in diameter is carried out. The existence of domains with transverse circumferential magnetization is experimentally demonstrated in the near-surface region of microwires. The dependence of the width of circular domains on the length and diameter of wires is obtained. It is shown that the near-surface micromagnetic structure of amorphous wires is changed under a stretch-induced stress. It is proved that the magnetization reversal of microwires in a longitudinal magnetic field occurs due to the rotation of local magnetization vectors in circular domains.     

Giant magnetoimpedance in thin amorphous and nanocrystalline microwires

We present the results on Giant magneto-impedance effect (GMI) in amorphous and nanocrystalline microwires at frequencies until 4 GHz, paying special attention to tailoring the frequency and magnetic field dependence of the GMI effect. Correlation between magnetoelastic anisotropy and magnetic field dependences of diagonal and off-diagonal impedance components are observed.     

Study of surface magnetic properties in Co-rich amorphous microwires

Magneto-optical investigations carried out on a Co-rich glass-covered amorphous microwire is presented. The appearance of circular magnetic bistability and the influence of tensile stress and high-frequency electric current on the surface magnetization reversal have been studied. The change of the mechanism of the magnetization reversal induced by the high-frequency electric current is also discussed.