Spin-orbit splitting of the copper halides and its volume dependence

We have investigated theoretically and experimentally the dependence of the spin-orbit splitting of the edge excitons in CuCl, CuBr, and CuI on volume. The results indicate a large contribution of the change in p(halogen)-d(Cu) hybridization with volume, especially for CuCl.     

Luminescence of Sc3+ and La3+ isoelectronic impurities in Lu3Al5O12 single-crystal films

The time-resolved luminescence and luminescence excitation spectra, and luminescence decay kinetics at 8 and 300 K of Lu₃A₁₅O₁₂ (LuAG) single-crystal films doped with Sc³⁺ and La³⁺ isoelectronic impurities and excited by synchrotron radiation are investigated. It is established that the La³⁺ isoelectronic impurity in the ?ub;c?ub; positions of the garnet lattice forms La _Lu ³⁺ luminescence centers emitting in the band with λ_max = 280 nm and the decay time of the main component τ = 300 ns at 300 K. The Sc³⁺ isoelectronic impurity located in the ?ub;c?ub; and (a) positions of the LuAG lattice forms two luminescence centers, Sc _Lu ³⁺ and Sc _Al ³⁺ , emitting in the bands with λ_max = 290 nm and τ = 240 ns and λ_max = 335 nm and τ = 375 ns, respectively, at 300 K. It is shown that the luminescence excitation of the La³⁺ and Sc³⁺ isoelectronic impurities in LuAG single-crystal films occurs through radiative decay of excitons localized near La _Lu ³⁺ , Sc _Lu ³⁺ , and Sc _Al ³⁺ centers. The energies of formation of these excitons are determined to be 6.8, 6.88, and 7.3 eV, respectively. It was found that the excited state of the excitons genetically related to the La _Lu ³⁺ , Sc _Lu ³⁺ , and Sc _Al ³⁺ enters has two radiative levels with different transition probabilities. This configuration leads to the presence of fast (2.3–8.4 ns) and slow (150–375 ns) main components in the luminescence of the centers formed by isoelectronic impurities in garnets.     

Luminescence of excitons and antisite defects in the phosphors based on garnet compounds

Intrinsic emission (excitons, anti-site defects (AD)) of oxides with garnet structure has been analysed by means of investigation of the time resolved luminescence and decay kinetic spectra under excitation by the synchrotron and X-ray radiation at 10–300 K of the model objects: undoped single crystals and single crystalline films of Y₃Al₅O₁₂ and Lu₃Al₅O₁₂ garnets which are characterised by the significant differences in concentrations of AD Y_Al³⁺ and Lu_Al³⁺-types as analogs of cation isoelectronic impurities.     

Two-photon absorption in CuCl

The two-photon absorption spectrum of CuCl at 4.2°K is studied in the energy range of the excitonic lines. The observed lines are suggested to be due to the creation of excitons in the 1S, 2P and 3P states and also to the simultaneous creation of 2P and 3P excitons and one or more longitudinal optical phonons.     

Luminescence of impurity-bound excitons in corundum

The luminescence characteristics of M ³⁺: Al₂O₃ crystals, where M ³⁺ stands for an isoelectronic cation impurity with a filled electron shell, namely, Sc³⁺, Y³⁺, or La³⁺, were studied. The luminescence of excitons bound (BE) to these impurities was detected. The position of the BE energy states at the long-wavelength absorption edge as a function of the M ³⁺ ionic radius was established. The energies of the long-wavelength BE creation threshold and of the maximum of the BE luminescence band were approximated empirically by third-order polynomials of the Toyozawa polynomial type, which describes electron-phonon interaction. The energy and spatial structure of the BE was found to be similar to that of a self-trapped exciton (STE). The BE and STE states are separated by an energy barrier, and energy transfer from the STE to BE is frozen at low temperatures.     

GaAs中N等电子陷阱的研究

对离子注N的GaAs样品作了77K的静压光致荧光研究。观察到了N陷阱中心元胞势束缚激子N_x的发光光谱及畸变势束缚激子N_T的发光峰。测量N_X能级的压力系数为2.8meV/kbar,常压下N的共振态高于导带边179meV。讨论了N等电子陷阱的电声子耦合强度及有效束缚激子半径随压力的变化关系。 关键词：     

A new application of the diamond anvil cell: Measurements under uniaxial stress

We present optical absorption measurements on thin films of CuCl and CuBr at 100K under uniaxial stress up to ～3.0 GPa. The thin films were prepared by evaporating onto the inner face of one diamond of a diamond anvil cell. From the splitting of the excitons we were able to determine the shear deformation potential d = -0.69 ± 0.03 eV for CuBr and d = +0.45 ± 0.08 eV for CuCl. Our measurements indicate also that the spin-orbit splitting increases in both materials with increasing pressure. A new shear-induced phase is found for CuCl above 4.8 GPa.     

Raman and luminescence processes under the resonant two-photon excitation of an excitonic molecule in CuCl

Emission spectra and its decay time under the resonant two-photon excitation of an excitonic molecule in CuCl were observed using a tunable dye laser. The Raman and luminescence processes were separated from their different decay times. The ratios of these two processes were estimated for the transverse and longitudinal excitons, respectively, at various band widths of the exciting laser.     

Effect of the order in which powdered ZnS is doped with copper chloride and indium on formation of luminescence centers

We consider the effect of the order in which In and CuCl impurities are added during thermal doping on the luminescence characteristics of ZnS, and also their role in formation of emission centers in zinc sulfide. We show that the order in which the impurities (acting as activators or coactivators) are added to the ZnS plays the determining role in formation of the spectral characteristics of the luminophore obtained. We have established that adding indium first during thermal doping of zinc sulfide with In and CuCl prevents diffusion of Cu into the interior of the ZnS. Adding indium after CuCl or adding indium simultaneously with CuCl prevents formation of the Cu2S and CuS phases or promotes degradation of the indicated phases in ZnS. __________ Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 73, No. 5, pp. 601–605, September–October, 2006.     

Time-resolved luminescence spectra of AgBr at high excitation densities

Time-resolved luminescence measurements in AgBr at 1.9K and cw excitation densities up to 100 kW/cm² reveal new emission bands with strong vibrational structure close to the free exciton. Besides the emission of excitons bound to isoelectronic I^- traps two different luminescence systems are separated by making use of their different lifetime and excitation behaviour. The results are discussed in view of the electron-hole-liquid recombination recently found in the investigated spectral range.     

Excitons in highly optically excited gallium phosphide

A study has been made of luminescence in weakly (10¹⁵-10¹⁶ cm^-3) and heavily (10¹⁸-10¹⁹ cm^-3) N-doped GaP crystals induced by 1.78, 2.34 and 3.56 eV photons from Q-switched ruby or neodymium lasers with a KDP crystal for second harmonic generation. The results which were obtained at excitations up to 10²⁰ cm^-3 electron-hole pairs are interpreted as the transitions: single bound excitons, bound excitonic molecules, free excitons in weakly-doped GaP, as well as Auger processes and the formation of a new excitonic state similar to a solid metal with high density of single excitons and excitonic molecules bound to isoelectronic traps in heavily-doped GaP.     

Modulated exciton spectroscopy

In this paper, the principal results obtained on the modulated excitonic spectra of Cu₂O and CuCl in the presence of an electric field, are reviewed. The behaviour of excitons in the electric field is discussed and compared with the actual theories. A symmetry analysis of the experimental results is performed which gives information about the origin of the optical transitions as well as on the nature of the field effects on the excitons.     

Superfluidity of “dirty” excitons

The effect of a random field due to impurities, boundary irregularities, and so on, on the superfluidity of a three-dimensional system of excitons and a quasi-two-dimensional system of direct or spatially indirect excitons is studied. The influence of a random field on the density of the superfluid component in the indicated excitonic systems at low temperatures T is investigated. The interaction between excitons is taken into account in the ladder approximation. For quasi-two-dimensional excitonic systems in a random field the Kosterlitz-Thouless temperature in the superfluid state is calculated.     

Trapped exciton states in lead halides

The absorption spectra of thin films of PbCl₂ containing 4 mol.% of NaCl, and PbI₂ containing 4 mol.% of KI measured at room temperature are presented. The study indicates the presence of effective mass states associated with substitutional sodium (or potassium) impurities. The character of these states as intermediate excitons in lead halides are discussed.     

Optical properties of Cu+ centers in NaCl

Different aggregation-precipitation states of Cu⁺ have been characterized by absorption bands peaked at 305, 350 and 372–383 nm.The absorption bands at 372–383 nm, observed exclusively in the most doped crystal, have been associated with the Z₁₂, Z₃ excitons of CuCl microcrystals incorporated into the NaCl matrix Their positions shift to low energies with increasing concentration, as expected for a decrease in the stress over the precipitate.The Z1₁₂, Z₃ exciton bands of CuCl microcrystals precipitated in NaCl can be observed by the optical absorption spectrum without reaching saturation Therefore, this technique could be an alternative method to studies of CuCl thin-film depositions or reflectivity of CuCl single crystals.The red emission band observed at 600 nm is a long-lived emission (τ? 29 ms) at variance with the behavior reported for the Cu⁺ emission It is related to energy transfer processes from Cu⁺ to Mn²⁺.     

Boson description of many-exciton systems in polar semiconductors

Using a unitary transformation the Hamiltonian of interacting polar excitons is established. Two representative states of the many-exciton systems, the biexciton and the dielectric excitonic liquid are discussed for the materials CdS, CuCl and CuBr.     

Delay times in the sputtering of atoms from alkali-halide crystals during low-energy electron bombardment

Delay times in the sputtering of atoms from RbI, RbBr and NaCl by 540 eV electrons were investigated. This was done by simultaneously using the correlation technique and a slotted disc velocity selector. We observed delays in thermally ejected alkali and halogen atoms. These times were found to be independent of target temperature and are ascribed to lifetimes of excitons. Non-thermal halogen atoms are always sputtered without any delay.     

Quantum size effect of excitonic molecules in CuCl microcrystals

The quantum size effect of excitonic molecules confined in microcrystals of CuCl is studied theoretically by a variational calculation for a simplified model. The excitons are approximated as quasiparticles confined in a microsphere with the effective radius R* and interacting with each other through the Morse potential. It is shown that the peak energy of the excitonic molecule luminescence shifts to the lower energy side from the bulk value for relatively large values of R* but shifts to the higher energy side as R* is decreased further, in agreement with the experimental observation. By fitting the theoretical value of the peak energy shift with the experimental values, it is shown that the minimum point of the Morse potential is at about 1 nm and the separation between the center of mass of the two excitons is about 1.5 nm in the bulk crystal.     

Method of low-temperature optical measurements with diamond anvil cells

Abstract

Constructions of a cryogenic diamond anvil system with mechanical clamping press and helium pressure medium for microscopic optical studies are described. Low temperature nonmagnetic cells ø40 and ø20 mm have been developed. GaP samples doped with S, Te and isoelectronic impurities N, NN have been investigated up to 20 GPa at 1.5-300K.     

Comparison of the interaction of Cl2 and Br2 with Cu(100)

The adsorption, reaction and etching of Cu(100) by Cl₂ was studied using temperature programmed desorption (TPD) and low energy electron diffraction (LEED), and the results were compared with recent results for Br₂. Although the general etching mechanism was the same for both gases (adsorption rate limited Cu halide formation followed by halide sublimation), significant differences between the behavior of Cl₂ and Br₂ were observed. The desorption of CuCl was characterized by a single zero order sublimation peak, independent of CuCl coverage, while limiting the CuBr coverage resulted in a desorption peak at temperatures lower than a prediction based on vapor pressure data of all known phases of CuBr. In addition, Cl₂ was found to be at least an order of magnitude less reactive than Br₂ towards halide formation. For both Cl₂ and Br₂, the halide formation rate reversibly decreased with increasing reaction temperature. However, for Br₂, but not Cl₂, annealing a chemisorbed halogen layer prior to further reaction irreversibly increased the halide formation rate. Structural differences between CuCl and CuBr on Cu(100) were also observed. For CuCl, LEED data suggested that highly faceted crystallites form at 325 K and remain stable until desorption, while LEED data for CuBr reveal a compressed epitaxial (111) layer that disorders below 400 K and then desorbs. The implications of these differences on etching and oxidation processes are discussed.