Dielectric property of CaCu3Ti4O12 thin film grown on Nb-doped SrTiO3(100) single crystal

Thin film of CaCu₃Ti₄O₁₂ (CCTO) has been deposited on Nb-doped SrTiO₃(100) single crystal using pulsed laser deposition. The dielectric constant and AC conductivity of CCTO film in the metal–insulator–metal capacitor configuration over a wide temperature (80 to 500 K) and frequency (100 Hz to 1 MHz) range have been measured. The small dielectric dispersion with frequency observed in the lower temperature region (<300 K) indicates the presence of small defects in the deposited CCTO thin film. The frequency-dependent AC conductivity at lower temperature indicates the hopping conduction. The dielectric dispersion data has been analyzed in the light of both conductivity relaxation and Debye type relaxation with a distribution of relaxation times. Origin of dielectric dispersion is attributed to the distribution of barrier heights such that some charge carriers are confined between long-range potential wells associated with defects and give rise to dipolar polarization, while those carriers which do not encounter long-range potential well give rise to DC conductivity.     

Electron transport in semiconducting nanoparticle and nanocluster carbon-polymer composites

The electron transport properties of two types of carbon-polyimide (C-PI) nanocomposite thin films have been evaluated. Conductive nanocomposites formed by incorporation of 30 nm carbon particles prior to polymer cross linking (ex situ formation) has been compared to high energy ion beam irradiation in situ formation of nanoscale carbon clusters within the polymer composite. Addition of carbon nanoparticles were able to reduce the resistivity by 13 orders of magnitude for 8 vol% carbon content. The irradiated in situ formed film showed a comparable resistivity to this 8% C-PI film. All the films exhibited negative temperature coefficient of resistance (NTCR) behaviour. While in the ex situ films the NTCR decreased progressively with increasing temperature above 350 K, the in situ film exhibited a constant NTCR value at ambient as well as elevated temperatures indicating that films formed by ion beam irradiation eliminate possible clustering of nanoparticles prior to crosslinking seen in the ex situ films. The optimum hop energies for the ex situ films ranged from 23.1 to 8.05 meV when carbon content increased from 1 to 8 vol% and the corresponding value for the in situ formed film was 34.94 meV. These films had appreciable NTCR values, and were evaluated for their thermistor behaviour as a class of material with potential for temperature sensing devices.     

Enhanced dielectric permittivity in poly (vinylidene) fluoride/multiwalled carbon nanotubes nanocomposite thin films fabricated by pulsed laser deposition

The fabrication of high quality thin films of poly (vinylidene fluoride) embedded with multiwalled carbon nanotubes using pulsed laser deposition technique is reported. The prepared films were characterized for structural, morphology and dielectric properties. The morphology analysis revealed uniform dispersion of multiwalled carbon nanotubes throughout the polymer matrix. X-ray diffraction results suggested that the poly (vinylidene fluoride) film is in amorphous phase while addition of multiwalled carbon nanotubes showed presence of crystalline peaks in the nanocomposites films. It was interesting to note that the nanocomposite films exhibits significant enhancement of the ferroelectric β-phase as evidenced by the X-ray diffraction and Fourier transform infrared spectroscopy results. The dielectric analysis shows a remarkable enhancement in the dielectric permittivity of nanocomposites with lower loss and conductivity level. The results can be attributed to the formation of minicapacitor network and relatively higher percolation threshold in the nanocomposites.     

Dielectric properties of CaCu3Ti4O12–silicone resin composites

CaCu₃Ti₄O₁₂ (CCTO)–silicone resin composites with various CCTO volume fractions were prepared. Relatively high dielectric constant (ε=119) and low loss (tanδ=0.35) of the composites with CCTO volume fraction of 0.9 were observed. Two theoretical models were employed to predict the dielectric constant of these composites; the dielectric constant obtained via the Maxwell–Garnett model was in close agreement with the experimental data. The dielectric constant of CCTO–silicone resin composites showed a weak frequency dependence at the measuring frequency range and the loss tangent apparently decreases with increase in frequency.     

Reduced dielectric loss and leakage current in CaCu3Ti4O12/SiO2/CaCu3Ti4O12 multilayered films

The CaCu₃Ti₄O₁₂/SiO₂/CaCu₃Ti₄O₁₂ (CCTO/SiO₂/CCTO) multilayered films were prepared on Pt/Ti/SiO₂/Si substrates by pulsed laser deposition method. It has been demonstrated that the dielectric loss and the leakage current density were significantly reduced with the increase of the SiO₂ layer thickness, accompanied with a decrease of the dielectric constant. The CCTO film with a 20 nm SiO₂ layer showed a dielectric loss of 0.065 at 100 kHz and the leakage current density of 6×10⁻⁷ A/cm² at 100 kV/cm, which were much lower than those of the single layer CCTO films. The improvement of the electric properties is ascribed to two reasons: one is the improved crystallinity; the other is the reduced free carriers in the multilayered films.     

Enhanced dielectric properties and energy storage density of interface controlled ferroelectric BCZT-epoxy nanocomposites

Polymer nanocomposites with ferroelectric fillers are promising materials for modern power electronics that include energy storage devices. Ferroelectric filler, Ba_0.85Ca_0.15Zr_0.1Ti_0.9O₃ (BCZT) nanopowder, was synthesized by sol-gel method. X-ray diffraction (XRD) studies confirmed the phase purity and the particle size distribution was determined by transmission electron microscopy (TEM). Extended aromatic ligand in the form of naphthyl phosphate (NPh) was chosen for surface passivation of BCZT nanoparticles. Surface functionalization was validated by thermogravimetric analysis (TGA), X-ray photoelectron spectroscopy (XPS), and impedance spectroscopy using slurry technique. The dielectric constant of surface-passivated BCZT nanopowder was ~155, whereas pristine BCZT nanopowder dielectric constant could not be assessed due to high innate surface conductivity. Furthermore, BCZT–epoxy nanocomposite films were prepared and analyzed by differential scanning calorimetry (DSC), dielectric spectroscopy, dielectric breakdown strength (DBS), and scanning electron microscopy (SEM). Owning to stronger polymer–particle interface, dielectric measurements of 5 vol.% NPh surface functionalized BCZT–epoxy nanocomposites indicated improved DBS and glass transition temperature (T_g), reduced dielectric loss, and enhanced energy storage density compared to untreated BCZT–epoxy composites and pure epoxy. The energy storage density of 30 vol.% NPh surface functionalized BCZT–epoxy nanocomposite of 20 μm film thickness was almost three times that of pure epoxy polymer of identical film thickness.     

Compositional studies of near-room-temperature thermal CVD poly(chloro-p-xylylene)/SiO2 nanocomposites

Chemical-vapor-deposited (CVD) nanostructured thin films have been recently developed to overcome the limitations of thin films from one material class. In particular polymer/SiO₂ nanocomposite thin films have been developed to reduce power consumption, cross-talk, and RC delay in the next generation of ultralarge-scale integrated devices. Since polymers mainly possess electronic polarization they inherently have a low dielectric constant. However, they often suffer from poor dielectric anisotropy, low elastic and shear moduli, and have poor resistance to metallic diffusion. As a proof of concept, poly(chloro-p-xylylene)/SiO₂ thermal CVD nanocomposites have been developed to overcome such material deficiencies. Additionally, the CVD process allows for high manufacturing throughput and compositional control in situ, both potentially advantageous for IC fabrication. The study here focuses on the polymeric phase of the nanocomposite, which as a homopolymer can possess ≈60% crystallinity and a positive optical birefringence of 0.034, both post-deposition-annealed just before the polymer’s melting point. With increasing volume percent of SiO₂, the percent crystallinity is reduced, the thin film becomes more isotropic and the index of refraction can be varied depending on the volume percent SiO₂. Received: 15 December 1999 / Accepted: 7 January 2000 / Published online: 5 April 2000     

Microstructure and dielectric properties of pulsed-laser-deposited CaCu 3 Ti 4 O 12 thin films on LaNiO 3 buffered Pt/Ti/SiO 2 /Si substrates

CaCu₃Ti₄O₁₂ (CCTO) thin films have been prepared by a pulsed-laser-deposition method on LaNiO₃ buffered Pt/Ti/SiO₂/Si substrates, and their microstructure and dielectric properties have been compared with those of the films deposited directly on Pt/Ti/SiO₂/Si substrates. The crystalline structure and the surface morphology of the CCTO thin films were markedly affected by the bottom electrodes. Both the films show temperature-independent dielectric properties in a wide temperature range, which is similar to those properties obtained in single-crystal or epitaxial thin films, while the room-temperature dielectric constant of the 350-nm-thick CCTO films on LaNiO₃/Pt/Ti/SiO₂/Si substrates at 100 kHz was found to be 2300, which was increased significantly compared with that obtained in the films on Pt/Ti/SiO₂/Si substrates. Using the impedance spectroscopy technique, it has been suggested that the high dielectric constant response of the CCTO thin films originates from the grain boundary layer mechanism as found in internal barrier layer capacitors. PACS 77.55.+f; 81.15.Fg; 68.55.-a     

Study on ionic conductivity and dielectric properties of PEO-based solid nanocomposite polymer electrolytes

The ionic conductivity and dielectric properties of the solid nanocomposite polymer electrolytes formed by dispersing a low particle-sized TiO₂ ceramic filler in a poly (ethylene oxide) (PEO)-AgNO₃ matrix are presented and discussed. The solid nanocomposite polymer electrolytes are prepared by hot press method. The optimum conducting solid polymer electrolyte of polymer PEO and salt AgNO₃ is used as host matrix and TiO₂ as filler. From the filler concentration-dependent conductivity study, the maximum ionic conductivity at room temperature is obtained for 10 wt% of TiO₂. The real part of impedance (Z′) and imaginary part of impedance (Z″) are analyzed using an LCR meter. The dielectric properties of the highest conducting solid polymer electrolyte are analyzed using dielectric permittivity (ε′), dielectric loss (ε″), loss tangent (tan δ), real part of the electric modulus (M′), and imaginary part of the electric modulus (M″). It is observed that the dielectric constant (ε′) increases sharply towards the lower frequencies due to the electrode polarization effect. The maxima of the loss tangent (tan δ) shift towards higher frequencies with increasing temperature. The peaks observed in the imaginary part of the electric modulus (M″) due to conductivity relaxation shows that the material is ionic conductor. The enhancement in ionic conductivity is observed when nanosized TiO₂ is added into the solid polymer electrolyte.     

Highly frequency-, temperature-, and bias-stable dielectric properties of 500 °C processed Bi2SiO5 thin films with low dielectric loss

Excellent dielectric frequency, bias, and temperature stability of bismuth silicate (Bi₂SiO₅, BSO) thin films with a low dielectric loss has been obtained in this study. The thin films were prepared on Pt/Ti/SiO₂/Si substrates by a chemical solution deposition method at a relatively low annealing temperature of 500 °C. The BSO films have a preferred growth along (200) orientation with dense fine-grained surface morphology. The dielectric constant and dielectric loss of the thin film annealed at 500 °C are 57 and 0.01, respectively, at 100 kHz, with little change between 1 kHz and 100 kHz and in the bias electric field range between −250 kV/cm and 250 kV/cm, indicating that the thin film exhibits a low dielectric loss as well as excellent frequency and bias field stability. The dielectric-temperature measurements confirmed that the BSO thin film annealed at 500 °C also has good temperature stability between 150 K and 450 K. Our results suggest that the BSO thin films have potential applications in the next-generation integrated capacitors.     

Plasmonic enhancement of the vanadium dioxide phase transition induced by low-power laser irradiation

Nanocomposites consisting of gold nanoparticle (NP) arrays and vanadium dioxide (VO₂) thin films are noteworthy for the tunability of both their thermal and optical properties. The localized surface plasmon resonance (LSPR) of the Au can be tuned when its dielectric environment is modulated by the semiconducting-to-metal phase transition (SMT) of the VO₂; the LSPR itself can be altered by changing the shape of the NPs and the pitch of the NP array. In principle, then it should be possible to choose a combination of VO₂ film and Au LSPR properties that maximizes the overall optical response of the nanocomposite. To demonstrate this effect, transient transmission measurements were conducted on lithographically fabricated arrays of Au NPs of diameter 140?nm, array spacing 350 nm, and covered with a 60?nm thick films of VO₂ via pulsed laser deposition. Both Au::VO₂ nanocomposites and bare VO₂ film were irradiated with a shuttered 785?nm pump laser, and their optical response was probed at 1550?nm by a fixed-frequency diode laser. The Au::VO₂ nanocomposite exhibited an increased effective absorption coefficient 1.5 times that of the plain film and required 37?% less laser power to induce the SMT. The time-dependent temperature rise in the film as a function of laser intensity was calculated from these measurements and compared with both analytic and finite-element models. Our results suggest that Au::VO₂ nanocomposites may be useful in applications such as thermal-management coatings for energy efficient ??smart?? windows.     

巨介电常数氧化物CaCu3Ti4O12的介电和阻抗特性

采用固相烧结法合成了单相巨介电常数氧化物CaCu₃Ti₄O₁₂（CCTO）.用阻抗分析仪分析了10—420 K温度范围内的介电频谱和阻抗谱特性,并结合ZVIEW软件进行了模拟.结果表明：温度高于室温时,频谱出现两个明显的弛豫台阶,低频弛豫介电常数随温度升高而显著增大,表现出热离子极化特点;温度低于室温时,频谱表现出类德拜弛豫,且高、低平台介电常数值基本不随温度变化,表现出界面极化特点和较好的温度稳定性.频谱中依次出现的介电弛豫对应于阻抗谱中 关键词： 3Ti₄O₁₂')" href="#">CaCu₃Ti₄O₁₂ 介电频谱 阻抗谱 Cole-Cole半圆弧     

Enhanced energy storage in polyvinylidenefluoride (PVDF) + BaZrO<Subscript>3</Subscript> electroactive nanocomposites

PVDF + BaZrO₃ electroactive nanocomposite thin film has been prepared by solution casting method. The structural analysis was carried out by using x-ray diffraction pattern and atomic force microscopy (AFM). Generally, the performance of dielectric capacitors toward higher energy density and higher operating temperatures has been drawing increased interest. In this regard, the present study was focussed on the fabrication and characterization of PVDF + BaZrO₃ electroactive nanocomposites in view of enhancing the energy density at elevated temperature. Cole-Cole plot is an agreement with multiple relaxation process in electroactive nanocomposites. Dielectric energy storage performance is assessed for PVDF nanocomposites with different wt% of BaZrO₃ at different frequencies and temperature. It has been observed that with increase of temperature, the permittivity increased while the energy density slightly decreased but significantly higher than pure polymer PVDF. A high energy density of 6.88 J/cm³ was obtained for BaZrO₃ electroactive nanocomposites at 50 °C and 5.06 J/cm³ at 70 °C. Overall, the testing results indicate that using nanocomposites of PVDF and BaZrO₃ as a dielectric component is promising for implementation to preserve high energy density values up to temperatures of 70 °C.The enhancement of dielectric permittivity and the energy density is attributed due to increase of interracial charge density. The effect of BaZrO₃ nanoparticles in energy density of PVDF is first time reported.     

异质界面对Ca(Mg1/3Nb2/3)O3/CaTiO3叠层薄膜结构和介电性能的影响

采用异质叠层方式制备出一定厚度的Ca(Mg_1/3Nb_2/3)O₃/CaTiO₃(CMN/CT)叠层薄膜,研究了异质界面对薄膜结构、微观形貌及介电性能的影响及其规律.根据实验测试结果,提出CMN/CT叠层薄膜的模拟等效电路,建立介电常数和介电损耗的理论计算公式.结果表明:CMN/CT异质叠层薄膜具有完全正交钙钛矿结构,结构致密,厚度均匀,薄膜中存在独立的CMN和CT相.异质界面处存在过渡层,随着薄膜中异质界面个数增加,介电常数增大,介电损耗减小.减小界面过渡层的厚度,有利于提高CMN/CT叠层薄膜的介电性能.     

Influence of sintering conditions and doping on the dielectric relaxation originating from the surface layer effects in CaCu3Ti4O12 ceramics

Detailed investigations into the dielectric dispersion phenomenon in the giant dielectric constant material CaCu₃Ti₄O₁₂ (CCTO) around room temperature revealed the existence of two successive dielectric relaxations. In the temperature domain, a new dielectric relaxation was clearly observed around 250 K, in addition to the well-investigated dielectric relaxation close to 100 K. The effect of sintering and doping (La³⁺) on the strength of these dielectric relaxations were studied in detail. The sintering temperature as well as its duration was found to have tremendous influence on the dielectric relaxation that was encountered around 250 K. This Maxwell-Wagner (M-W) type of relaxation was found to be originating from the surface layer containing the Cu-rich phase, which was ascribed to the difference in the oxygen content between the surface and the interior of the sample. Interestingly, this particular additional relaxation was not observed in La_2/3Cu₃Ti₄O₁₂, a low dielectric constant member of the CCTO family, in which the segregation of Cu-rich phase on the surface was absent. Indeed the correlation between the new relaxation and the presence of Cu-rich phase in CCTO ceramics was further corroborated by the absence of the same after removing the top and bottom layers.     

Low temperature crystallization behavior of multi-walled carbon nanotubes/Pb(Zr0.52Ti0.48)O3 nanocomposite thin films through annealing in various atmosphere and duration control

We report a successful fabrication of 300 nm thick carbon nanotubes and Pb(Zr_0.52Ti_0.48)O₃ (CNT–PZT) nanocomposite thin films with annealing temperature as low as 500 °C in H₂/N₂ atmosphere. Realizing the thickness of CNT–PZT nanocomposite thin films down to few hundred nanometers is one way to reduce the operating voltage of its application to micro- or nano-electromechanical system. The field emission scanning electron microscopic and atomic microscopic analysis revealed that the nanocomposite thin films annealed in H₂/N₂ atmosphere exhibits the most favorable surface morphology with adequate perovskite (111) reflection of PZT based on X-ray diffraction analysis. The measured dielectric constant and loss tangent of the nanocomposite thin films show that the annealing duration of 30 min promotes the optimum dielectric properties of the nanocomposite thin films. Our observations suggest that the annealing atmosphere and duration are important parameters in controlling the crystallization behavior hence the dielectric properties of the nanocomposite thin films, which can be readily applicable to other nanocomposite thin films.     

Enhanced dielectric and nonohmic properties of SrTiO3-modified CaCu3Ti4O12 ceramics

Dielectric and nonohmic properties of CaCu₃Ti₄O₁₂ (CCTO) ceramics can be modified by addition of SrTiO₃ (STO) in different molar proportions which were fabricated by a modified sol-gel method. XRD results indicated that all modified ceramics showed mixed phase consisting of both CCTO and STO. SEM images and grain size distribution probability also presented the change of microstructure with the addition of STO. The dielectric loss of the CCTO/0.4STO ceramics sintered at 1000 °C can be lower than 0.02 in a wide frequency (1 kHz–10 kHz), especially at 1 kHz, the dielectric loss of this sample is as low as 0.012. Furthermore, excellent nonlinear I–V electrical characteristic (high breakdown voltage to 54.15 kV/cm for CCTO/0.4STO sintered at 1000 °C) was observed as well. All the results indicated that the addition of STO does improve the dielectric properties and nonohmic characteristics of CCTO ceramics dramatically.     

Formation of Heterogeneous Powder Coatings with a Two-Level Micro-and Nanocomposite Structure under Gas-Dynamic Spraying Conditions

Heterogeneous coatings have been deposited by the cold gas-dynamic spraying of mechanically synthesized AMg2/graphite + Al₂O₃ powders. A specific feature of the coatings formed is the existence of a two-level micro-and nanocomposite structure. It has been established that an increase in the content of microsized Al₂O₃ particles in the mixture from 10 to 30 wt % produces a twofold increase in the thickness of the coating deposited for the same time period from 140 to 310 μm. A further growth in the content of microsized Al₂O₃ particles in the mixture up to 50 wt % leads to a decrease in the thickness of the coating formed to 40 μm. The manufactured coatings have a high microhardness ranging from 1.7 to 3.2 GPa depending on their composition. The high microhardness of these coatings is caused by an increase in the hardness of the matrix material due to the creation of a nanocomposite structure, which strengthens the immobilization of microsized Al₂O₃ particles in it, thus improving the properties of the heterogeneous coating as a whole.     

Improved Dielectric Breakdown Strength of Covalently-Bonded Interface Polymer–Particle Nanocomposites

Interfacial covalent bonding is an effective approach to increase the electrical resistance of a polymer–particle composite to charge flow and dielectric breakdown. A bifunctional tether reagent bonded to an inorganic oxide particle surface assists with particle dispersion within a thermosetting epoxy polymer matrix but then also reacts covalently with the polymer matrix. Bonding the particle surface to the polymer matrix resulted in a composite that maintained the pure polymer glass transition temperature, compared to modified or unmodified particle dispersions that lacked covalent bonding to the polymer matrix, which depressed the polymer glass transition to lower temperatures. The added interfacial control, directly bonding the particle to the polymer matrix, appears to prevent conductive percolation across particle surfaces that results in a reduced Maxwell–Wagner relaxation of the polymer–particle composite and a reduced sensitivity to a dielectric breakdown event. The inclusion of 5 vol% particles of higher permittivity produces a composite of enhanced dielectric constant and, with surface modification to permit surface cross-linking into the polymer, a polymer–particle composite with a Weibull E ₀ dielectric breakdown strength of 25% greater than that of the pure polymer resulted. The estimated energy density for the cross-linked interface composite was improved 260% compared to the polymer alone, 560% better than a polymer–particle composite synthesized using bare particles, and 80% better than a polymer–particle composite utilizing bare particles with a dispersant.     

Evidence for internal resistive barriers in a crystal of the giant dielectric constant material: CaCu3Ti4O12

Complex impedance spectra were obtained on a crystal of CaCu₃Ti₄O₁₂ (CCTO) from 289 to 456 K. As in the case of ceramic CCTO, these spectra can be interpreted as arising from a conducting material containing insulating barriers. This is then further evidence for the existence of planar defects within crystals of CCTO that act as insulating barriers and produce the large dielectric constant through a space charge mechanism.