External cavity diode laser with kilohertz linewidth by a monolithic folded Fabry-Perot cavity optical feedback

We present a extended-cavity diode laser (ECDL) with kilohertz linewidth by optical feedback from a monolithic folded Fabry-Perot cavity (MFC). In our experiments, an MFC replaces the retroreflecting mirror in the traditional ECDL configuration. Beat-note measurements between this MFC-ECDL and a narrow-linewidth reference laser are performed and demonstrate that the linewidth of this MFC-ECDL is about 6.8 kHz. Phase locking of this MFC-ECDL to the reference laser is achieved with a unity gain as small as 10.2 kHz.     

A 657-nm narrow bandwidth interference filter-stabilized diode laser

We present a 657-nm external cavity diode laser (ECDL) system,where the output frequency is stabilized by a narrow-band high transmission interference filter.This novel diode laser system emits laser with an instantaneous linewidth of 7 kHz and a broadened linewidth of 432 kHz.     

基于自制超稳定F-P腔压窄632.8nm外腔半导体激光线宽的实验研究

窄线宽激光由于其具有单色性好、稳定度高、相干长度长等优点,广泛应用于光电检测领域,包括相干通信、精密测量、光学频率标准、吸收光谱计量以及光与物质相互作用研究等。目前频率稳定的氦氖激光器线宽可以达到MHz量级,分布反馈式（DFB）光纤激光器线宽可达kHz量级,DFB半导体激光器线宽可以达到MHz量级,然而光栅反馈半导体激光器可以实现百kHz量级线宽的输出。为了进一步压窄各类激光器线宽,需要通过反馈控制技术来锁定激光到某一频率参考。该研究将自行设计的超稳腔作为频率参考,实现了632.8 nm外腔半导体激光器（ECDL）线宽的有效压窄。本窄线宽激光产生系统的研制包括超稳腔设计、光路设计、ECDL频率控制以及系统集成。超稳腔采用两镜法布里-珀罗腔（F-P腔）结构,腔体是膨胀系数约为10-6 K-1的微晶玻璃,腔镜为一对反射率达99.988 5%(±0.003 5%）的平面镜和凹面镜。为进一步减小外界环境对F-P腔腔长的影响,需要对腔体进行温度控制,本系统采用四片总功率为96 W的半导体制冷片以及水冷散热设计。同时为了降低声音和空气流动对腔模频率的影响,将F-P腔置于真空度为10-5 torr的真空室中;另外为了有效隔振,腔体与真空室用硅橡胶材料隔离。该系统采用的ECDL为德国Toptica公司的DL pro系列激光器,其具有压电陶瓷（PZT）和电流调制两个频率控制端,响应带宽分别为1 kHz和100 MHz。激光器的频率控制采用了Pound-Drever-Hall （PDH）锁频技术,18 MHz的调制频率加载到激光器的电流调制端,通过对F-P腔的反射信号进行解调获得误差信号,通过两路反馈控制,实现了近1 MHz的锁定带宽。通过对系统的不断优化,最后将自由运转状态下约300 kHz的激光线宽压窄到了10 kHz量级,并且系统运行稳定,连续12小时锁定的频率漂移量约为30 MHz。该研究研制的632.8 nm窄线宽激光源不仅可以应用到吸收光谱计量领域,同时也可以在光学面型精密测量领域发挥重要作用。     

Efficient phase noise suppression of an external-cavity diode-laser by optical filtering and resonant optical feedback

We experimentally demonstrated that the excess phase noise of an external cavity diode laser (ECDL) can be efficiently suppressed by optical filtering and resonant optical feedback techniques. A suppression of more than 40?dB phase noise was obtained for the first time using these methods. It made that the phase noise of the ECDL reached shot noise level from 15?MHz. This opens a new way to reduce the phase noise of diode lasers.     

High-resolution laser spectroscopy of ultracold ytterbium atoms using spin-forbidden electric quadrupole transition

We have successfully observed high-resolution spectra of spin-forbidden electric quadrupole transition (¹ S ₀→³ D ₂) in ytterbium (¹⁷⁴Yb) atoms. The differential light shifts between the ¹ S ₀ and the ³ D ₂ states in a far-off resonant trap at 532 nm are also measured. For the spectroscopy, we developed simple, narrow-linewidth, and long-term frequency stabilized violet diode laser systems. Long-term drifts of the excitation laser (404 nm) is suppressed by locking the laser to a length stabilized optical cavity. The optical path length of the cavity is stabilized to another diode laser whose frequency is locked to a strong ¹ S ₀→¹ P ₁ transition (399 nm) of Yb. Both lasers are standard extended-cavity diode lasers (ECDLs) in the Littrow configuration. Since the linewidth of a violet ECDL (～10 MHz) is broader than a typical value of a red or near infra-red ECDL (<1 MHz), we employ optical feedback from a narrow-band Fabry–Perot cavity to reduce the linewidth. The linewidth is expected to be <20 kHz for 1 ms averaging time, and the long-term frequency stability is estimated to be ～200 kHz/h.     

Narrow bandwidth interference filter-stabilized diode laser systems for the manipulation of neutral atoms

We present and investigate different external cavity diode laser (ECDL) configurations for the manipulation of neutral atoms, wavelength-stabilized by a narrow-band high transmission interference filter. A novel diode laser, providing high output power of more than 1 W, with a linewidth of less than 85 kHz, based on a self-seeded tapered amplifier chip has been developed. Additionally, we compare the optical and spectral properties of two laser systems based on common laser diodes, differing in their coating, as well as one, based on a distributed-feedback (DFB) diode. The linear cavity setup in all these systems combines a robust and compact design with a high wavelength tunability and an improved stability of the optical feedback compared to diode laser setups using diffraction gratings for wavelength discrimination.     

减反膜外腔半导体激光器特性的研究

研究了镀减反膜GaAs半导体激光器在Littrow 式外腔结构中的输出特性.采用电流补偿技术,得到了约30 GHz的连续无跳模调谐范围.利用外差拍探测技术获得激光器输出线宽约为120 kHz.还研究了激光器的强度噪声分别随着电流与波长变化的特点并对此进行了分析.该类激光器可以广泛应用在冷原子物理、激光光谱以及量子光学等许多领域. 关键词： 减反膜 半导体激光器 线宽 强度噪声     

利用自相位延迟方法测量单块腔反馈半导体外腔激光器的线宽

提出了采用单块折叠法布里-珀罗(F-P)腔作为外腔反馈元件实现窄线宽半导体激光器,采用单块腔的光学反馈来锁定外腔激光器,使用自相位延迟法测量该窄线宽激光器的线宽。实验结果表明,激光器线宽小于35kHz。实验还观测到由于单块腔耦合面上各耦合点的几何量和物理量误差不一样,随着折叠面兼输入输出耦合面上的耦合点的变化,外腔激光器的线宽发生改变。     

Stable Narrow Linewidth 689nm Diode Laser for the Second Stage Cooling and Trapping of Strontium Atoms

We report stable narrow linewidth laser systems based on self-developed Littman configuration external cavity diode lasers （ECDLs）. The frequency of the ECDL is stabilized to a high fineness ultralow-expansion glass reference cavity with the Pound-Drever-Hall technique. By heterodyne beating of two identical systems, we conclude that the linewidth 4.3× 10^-14 at an averaging measurement time. of each ECDL is reduced to lower than 150 Hz and its frequency stability reaches time of 1 s, the averaged long-term frequency drift is less than 0.2 Hz/s over 30 h     

Long-external-cavity distributed Bragg reflector laser with subkilohertz intrinsic linewidth

We report on a simple, compact, and robust 780 nm distributed Bragg reflector laser with subkilohertz intrinsic linewidth. An external cavity with optical path length of 3.6 m, implemented with an optical fiber, reduces the laser frequency noise by several orders of magnitude. At frequencies above 100 kHz the frequency noise spectral density is reduced by over 33 dB, resulting in an intrinsic Lorentzian linewidth of 300 Hz. The remaining low-frequency noise is easily removed by stabilization to an external reference cavity. We further characterize the influence of feedback power and current variation on the intrinsic linewidth. The system is suitable for experiments requiring a tunable laser with narrow linewidth and low high-frequency noise, such as coherent optical communication, optical clocks, and cavity QED experiments.     

Diode laser using narrow bandwidth interference filter at 852 nm and its application in Faraday anomalous dispersion optical filter

We demonstrate an 852-nm external cavity diode laser(ECDL) system whose wavelength is mainly determined by an interference filter instead of other wavelength selective elements. The Lorentzian linewidth measured by the heterodyne beating between two identical lasers is 28.3 k Hz. Moreover, we test the application of the ECDL in the Faraday atomic filter.Besides saturated absorption spectrum, the transmission spectrum of the Faraday atomic filter at 852 nm is measured by using the ECDL. This interference filter ECDL method can also be extended to other wavelengths and widen the application range of diode laser.     

Recent advances in laser self-injection locking to high-Q microresonators

The stabilization and manipulation of laser frequency by means of an external cavity are nearly ubiquitously used in fundamental research and laser applications. While most of the laser light transmits through the cavity, in the presence of some back-scattered light from the cavity to the laser, the self-injection locking effect can take place, which locks the laser emission frequency to the cavity mode of similar frequency. The self-injection locking leads to dramatic reduction of laser linewidth and noise. Using this approach, a common semiconductor laser locked to an ultrahigh-Q microresonator can obtain sub-Hertz linewidth, on par with state-of-the-art fiber lasers. Therefore it paves the way to manufacture high-performance semiconductor lasers with reduced footprint and cost. Moreover, with high laser power, the optical nonlinearity of the microresonator drastically changes the laser dynamics, offering routes for simultaneous pulse and frequency comb generation in the same microresonator. Particularly, integrated photonics technology, enabling components fabricated via semiconductor CMOS process, has brought increasing and extending interest to laser manufacturing using this method. In this article, we present a comprehensive tutorial on analytical and numerical methods of laser self-injection locking, as well a review of most recent theoretical and experimental achievements.     

Characterization of 60 GHz Multi Quantum well passively mode-locked laser under optical self-injection locking

The quality and pulse compression of the 60 GHz millimeter wave signals generated by 750 μm long InAlGaAs Multi Quantum Well (MQW) passively mode locked laser under free running and optical self-injection locked conditions are experimentally characterized in terms of longitudinal modes under certain bias currents that range from 24 mA to 90 mA. Initially, the MQW laser is characterized in free running condition with no external injection. The measurements reflect that the free spectral range of laser under test is around 61 GHz and exhibit more than 22 lasing modes. The laser is then integrated into low phase noise self-injection locking oscillator by feeding a part of output RF signal back into the laser cavity to enhance passive mode locking. By doing so the microwave line width of our laser is reduced from 900 kHz to 24 kHz with significant increase in output of resultant beat tones which exhibits strong passive mode locking. This is the first time that the free running microwave line width of MQW laser is reduced up to this level. It is evident from our experimental investigation that as we increase the power and phase correlation between different longitudinal modes inside laser cavity through optical self-injection, the strength of the passively mode locked mechanism is significantly increased and the phase noise of radio frequency signal is drastically reduced.     

光纤激光经过模清洁器后的强度噪声分析

对1560 nm单频光纤激光光源通过一个光学模清洁器后的强度噪声进行了分析研究.实验观察到模清洁器虽然对于激光的高频强度噪声有明显的抑制作用,但强度噪声特性随频率呈一定周期变化,且在低频处模清洁器对强度噪声有放大作用.本文认为这是由于模清洁器具有类似于光纤延迟线的时延效应,将激光源的部分相位噪声转化为强度噪声.通过理论分析,由相位噪声转化的相对强度噪声幅度与激光相干时间、模清洁器的平均延时参数以及分析频率相关.分析结果与实验测量结果符合良好.此外,通过在光路中加入声光调制器进行反馈调制,激光的线宽从26 kHz压窄至16 kHz,模清洁器的锁定质量明显提高,经过模清洁器后的激光强度噪声有所减小,与理论相符.该结果进一步证实了由相位噪声转化而来的强度噪声与模清洁器的锁定质量无直接关系.通过该研究,完善了光学模清洁器对激光的噪声抑制模型.     

弱耦合光纤光栅外腔半导体激光器

报道作者对单频窄宽光纤光栅外腔半导体激光器的一些研究结果。理论上分析了外腔的引入对激光器的阈值增益和光谱线宽的影响，实验上用自行研制的光纤布拉格反射滤波器（ＦＢＲ）与普通多纵模半导体激光耦合，在１．５５μｍ波段，得到边模抑制比大于２５ｄＢ，线宽小于６０ｋＨｚ的激光输出。     

Fundamental frequency noise properties of extended cavity erbium fiber lasers

A multimode linear cavity and a single-mode unidirectional ring cavity fiber laser with meter-long cavity lengths are shown to exhibit frequency noise limited by fundamental thermodynamic noise from 100?Hz to 100?kHz. Their measured spectra agree closely with theoretically derived thermodynamic noise and the characteristic dependence of the frequency noise power spectrum on the inverse of the cavity length is observed. The unidirectional ring laser exhibits a frequency noise of 2?Hz/Hz(1/2) at 1?kHz, one of the lowest published values to date from a free-running laser. The multimode linear cavity laser is shown to be a suitable candidate for thermal-noise-limited, meter-long fiber laser strain sensors with a strain resolution of 14?f?/Hz(1/2) at 1?kHz.     

低分析频率压缩光的实验制备

基于PPKTP晶体的阈值以下光学参量振荡(OPO)过程,制备了共振于铷原子D1线795 nm的压缩真空态光场,研究了分析频率处于千赫兹范围的主要噪声来源,特别是795 nm激光及其二次谐波397.5 nm激光在晶体内吸收引起的非线性损耗增加和系统热不稳定的问题(397.5 nm激光处于PPKTP晶体透光范围边缘,具有高于其他波长数倍的吸收系数).以795 nm和1064 nm为例,分析了非线性损耗及晶体内热效应对压缩度的影响.受限于以上因素,795 nm压缩光很难得到1064 nm波段同样的压缩度.探测系统中的噪声耦合则限制了压缩频带.实验上对分析频率为千赫兹的经典噪声进行了有效控制,通过使用真空注入的OPO、垂直偏振及反向传输的腔长锁定光、低噪声的平衡零拍探测器、高稳定度的实验系统及量子噪声锁定等方法,最终在2.6—100 kHz的分析频段得到了约2.8 dB的795 nm压缩真空.该压缩光可用作磁场测量系统的探测光以提高测量灵敏度.     

基于噪声免疫腔增强光外差分子光谱技术实现光纤激光器到1530.58 nmNH_3亚多普勒饱和光谱的频率锁定

噪声免疫腔增强光外差分子光谱技术(NICE-OHMS)由于结合了频率调制光谱与腔增强光谱两种技术,不仅可以将激光耦合到高精细度谐振腔大幅提高腔内功率,还可以实现低气压样品气体的高灵敏测量,因此基于该技术可以实现分子吸收线的饱和,获得亚多普勒光谱,从而能作为激光频率锁定的参考.本文基于光纤激光器的NICE-OHMS技术,将光纤激光器频率锁定到NH3的亚多普勒吸收线上.首先分析了基于Pound-Drever-Hall和DeVoe-Brewer技术实现激光到腔模和调制频率到腔自由光谱区频率锁定的性能,之后在腔内气压为70 mTorr条件下,测量了半高全宽为2.05 MHz的NH3亚多普勒信号,最后将1.53μm的光纤激光器频率锁定到该亚多普勒吸收线上,相对频率偏差为16.3 kHz,阿伦方差结果显示,136 s积分时间下频率稳定度达到1.6×10~(-12).     

Reduce of the Linewidth of a Diode Laser by Locking to a High-Finesse Fabry-Perot Cavity

We report frequency locking of a commercial 657nm diode laser to a high finesse Fabry-Perot cavity by the_ Pound-Drever-Hall method. The laser linewidth relative to the cavity is estimated to be about 6 kHz.     

95 GHz millimeter wave signal generation using an arrayed waveguide grating dual wavelength semiconductor laser

We report the generation of a 95?GHz carrier frequency by optical heterodyning of two wavelengths from adjacent channels from an arrayed waveguide grating-based multiwavelength laser. The extended cavity structure of the device provides low phase noise and narrow optical linewidth, further enhanced by the intracavity filter effect of the arrayed waveguide grating. We demonstrate that the generated RF beat note, at 95?GHz, has a -3 dB linewidth of 250?kHz. To the best of our knowledge, this is the narrowest RF linewidth generated from a free-running dual-wavelength semiconductor laser. The device is realized as a photonic integrated circuit using active-passive integration technology, and fabricated on a multiproject wafer run, constituting a novel approach for a compact, low-cost dual-wavelength heterodyne source.