多壁碳纳米管在循环相变过程中结构变化初探

对由离子束辐照多壁碳纳米管（MWCNTs）产生的无定形碳纳米线（ACNWs）进行了高温退火（2400℃）处理，通过透射电子显微镜(TEM)观察发现，ACNWs体部转变成与原来MWCNTs相似 的管状石墨结构，而其封端区域的石墨晶体结构形态却与原来的MWCNTs完全不同，且变化多 端.基于实验结果，对其相变过程机理提出了一个概念性的模型. 关键词： 无定形碳纳米线 高温退火 相变 透射电子显微镜     

40Ar+诱导无定形碳到金刚石纳米晶相变的研究

通过60 keV的⁴⁰Ar⁺辐照无定形碳靶合成了大量尺寸不同的金刚石纳米颗粒.高分辨透射电子显微镜配合能量色散X射线谱和电子衍射以及Raman谱分析的结果表明，这些嵌于具有扰动石墨结构薄膜中的纳米金刚石颗粒，其成核率很高(约为10¹³/cm²)，而且可以生长到较大的尺寸，有的甚至可以达到微米量级.对其相转变过程也进行了初步探讨. 关键词： 离子束 金刚石纳米晶 相变 透射电子显微镜     

双离子(40Ar+, C2H+6)辐照合成金刚石纳米晶颗粒

用双离子(⁴⁰Ar⁺，C₂H⁺₆)辐照实验完成了从多壁碳纳米管向金刚石纳米晶颗粒的转变.对转变机理进行了初步探讨.这一探索有望能成为一种金刚石纳米晶合成的新途径.由此可知，多重荷能离子辐照用于其他材料纳米结构的制备也不是凭空设想. 关键词： 金刚石纳米晶 离子辐照 透射电子显微镜     

C20富勒烯的Ar+离子辐照合成

Ar⁺离子辐照聚乙烯靶表面在室温情况下合成的C₂₀,已采用高分辨率透射电子显微镜/电子衍射装置、飞行时间质谱、红外和拉曼谱仪进行了研究.结果认为,辐照诱发的微晶体由笼式C₂₀组成. 关键词：     

宏观长Ag2S纳米线簇的制备及其温度电导特性和光电导特性

以固态离子学方法制备的宏观长银(Ag)纳米线簇为基础,采用气-固反应法制备出宏观长硫化银(Ag₂S)纳米线簇.利用扫描电子显微镜(SEM)、透射电子显微镜(TEM)、能量色散谱(EDS)和X射线光电子能谱(XPS)等手段对样品形貌和成分进行表征.将厘米长的Ag₂S纳米线簇两端涂敷金胶作为电极,并与外电路连接.在不同温度或采用不同波长的光束辐照下,测试了样品的输运性质.无光照时,在144—380 K的温度范围内,样品的电导随温度上升而非线性增大.室温下,Ag关键词： 硫化银纳米线 温度电导 光电导     

调幅W(Mo)/Cu纳米多层膜He+离子辐照响应行为

用磁控溅射技术制备不同调幅波长 (L) 的W(Mo)/Cu纳米多层膜,所制膜系在60 keV氦离子 (He⁺) 辐照条件下注入不同剂量: 0, 1×10¹⁷ He⁺/cm², 5×10¹⁷ He⁺/cm². 用X射线衍射仪 (XRD) 和高分辨透射电子显微镜(TEM)表征W(Mo)/Cu纳米多层膜辐照前后微观结构. 研究结果表明: 1) He⁺离子轰击引起温升效应是导致沉积态亚稳相β-W 转变成稳态 α-W相的主因, 而与调幅波长无明确关联; 2) 纳米多层结构中W(Mo) 和Cu膜显现出的辐照耐受性与调幅波长相关, 调幅波长越小, 抗He⁺的辐照性能越强; 3) 在5×10¹⁷ He⁺/cm²注入条件下, 观察到He团簇/泡在纳米结构W(Mo) 和Cu膜中的积聚行为存在明显差异: 在W (Mo) 膜中He团簇/泡的分布与晶粒取向相关, He团簇/泡倾向于沿W (211) 晶面分布; 而Cu膜非晶化且He团簇/泡在其体内呈均匀分布. 关键词： W(Mo)/Cu纳米多层膜 +辐照')" href="#">He⁺辐照 He团簇/泡 相转变     

掺稀土离子的电子俘获材料

可利用不等价离子取代法或高能射线辐照法制备电子俘获材料,如长余辉发光材料znO-SiO₂-B₂O₃-MnO、CaS:Eu²⁺,Tm³⁺、CaGa₂S₄:Eu²⁺,Ho³⁺和固体剂量材料Zn_0.96(BO₂)₂:0.04Tb,Sr_0.93Dy_0.07B₄O₇等.利用俘获在缺陷中的电子-空穴对的复合,并把能量传递给Eu²⁺或Mn²⁺等激活离子而产生长余辉发光或热释光.它们将在弱光照明与显示,信息存储和辐射治疗与探测、监控等方面获得应用.     

天然方解石的定代和顺磁共振研究

用ESR分析了天然方解石(CaCO₃)中的杂质Mn²⁺离子和天然顺磁缺陷的性质。有关谱的理论计算基本和实验结果一致.解释了热处理和辐照样品出现的一些实验现象,最后提出了如何克服干扰解决含有一些杂质Mn²⁺离子样品的定代问题。     

电子辐照诱发固态相变导致的氮化硼纳米结构生长

报道了N+离子轰击产生的氮化硼(BN)纳米结构,及在电子辐照时结构演化的高分辨透射电子显微镜的原位测定结果.应当强调的是,这种类富勒烯和发夹结构的演化,实际上是电子辐照诱发固态相变的发展,观察中发现的一些BN颗粒、卷曲物,可以被认为是类富勒烯等纳米结构形成的前体或早期阶段.提出了一种类富勒烯等结构的电子辐照动力学模型,并进行了讨论. 关键词： 氮化硼 电子辐照 透射电子显微镜 氮化硼纳米形成物     

自离子辐照对兆伏注P+硅中二次缺陷的影响

用平面透射电子显微术和剖面透射电子显微术以及卢瑟福背散射沟道谱技术研究了兆伏注P⁺硅中的二次缺陷以及自离子辐照对它们的影响.实验结果表明，二次缺陷峰的深度稍大于平均投影射程.实验还发现，用适当能量和剂量的自离子在退火之前辐照兆伏注P⁺硅样品，可以抑制二次缺陷的生成，但如果在退火之后辐照，则会得到相反效果.对此现象的物理原因进行了讨论.另外，还给出了Si⁺，P⁺在硅中形成二次缺陷带的临界剂量，并且对临界剂量与注入能量的关 关键词：     

碳纳米管的离子束焊接研究

用C+离子束轰击多壁碳纳米管后, 发现了大量的由无定形碳纳米线组成的连接结构. 这种用高分辨透射电子显微镜和电子衍射分析确认的离子束焊接方法, 不但可以作为准备纳米电子（光子）学器件和线路的手段, 结合微操纵技术, 也有可能对其它系统器件排布的制作有所贡献.     

Modification and smoothing of patterned surface by gas cluster ion beam irradiation

Surface modification and smoothing of patterned surfaces with gas cluster ion beams were studied. In this work, line and space patterns having various intervals and depths were created on amorphous carbon films by focused Ga⁺ ion beams, and subsequently, Ar GCIB irradiations on the pattern were performed. When the acceleration voltage of Ar cluster ions was 20 kV, the grooves, whose interval was below 200 nm, were planarized. However, it required much higher ion dose for wider interval of patterns. It is estimated that the distance of lateral motions induced by one cluster ion impact defines the spatial wavelength dependence of smoothing.     

Mode field diameter and nonlinear properties of air-core nanowires

Exact solutions of Maxwell's equations describing the lightwave through 3-layer-structured cylindrical waveguide are obtained and the mode field diameter and nonlinear coefficient of air-core nanowires (ACNWs) are numerically calculated. The simulation results show that ACNWs offer some unique optical properties, such as tight field confining ability and extremely high nonlinearity. At a certain wavelength and air core radius, we optimize the waveguide design to maximize the nonlinear coefficient and minimize the mode field diameter. Our results show that the ACNWs may be powerful potential tools for novel micro-photonic devices in the near future.     

Raman spectroscopy study of damage induced in fluorapatite by swift heavy ion irradiations

Raman spectroscopy was used to study the radiation damage of fluorapatite single crystals and sinters. Krypton and iodine ion irradiations were performed at high energies (∼1 MeV amu⁻¹) for fluences ranging between 1 × 10¹¹ and 5 × 10¹³ cm⁻². Evolution of the symmetric stretching mode of the PO₄³⁻ tetrahedral building blocks (strongest Raman mode observed at 965 cm⁻¹) versus ion fluence was investigated. After irradiation, this peak decreases in intensity and a second broader peak appears at lower wavenumber. The well‐resolved peak has been assigned to the crystalline phase, and the broader one to the amorphous phase. The integrated intensity ratios of these two peaks versus fluence are in good agreement with the damage fractions determined by X‐ray diffraction (XRD). Fits of the amorphous fraction versus fluence show that the amorphization mechanisms is dominated by a single‐impact process for iodine ions and by a double‐impact process for krypton ions in the case of single crystals and sinters. For both irradiations, complete amorphization could not be obtained. The amorphous fraction saturates at a maximum value of 88% for sinters and 72% for single crystals. This is attributed to a recrystallization effect which is more important in single crystals than in sinters. For both types of samples, the crystalline peak shifts slightly to a lower wavenumber with fluence, and then shifts back to its initial value for an amorphous fraction larger than 60%. This feature is attributed to a stress relaxation, as shown in the XRD data, which is accompanied by a decrease of the crystalline peak full‐width at half‐maximum. Copyright © 2011 John Wiley & Sons, Ltd.     

Preparation and characterization of amorphous hydrogenated carbon films containing Au nanoparticles from heat-treatment of polymer precursors

Amorphous hydrogenated carbon (aC:H) films containing Au nanoparticles have been successfully prepared by heat-treatment of the precursors including poly(phenylcarbyne) polymer and HAuCl₄ at 600 °C in Ar atmosphere. The microstructure and morphology of the obtained films were investigated by means of Raman, XPS, XRD, TEM, and AFM. The sheet resistivity of the films was measured by a four-point probe method. Moreover, a ball-on-disc test was employed to obtain information about the frictional properties and sliding wear resistance of the films. The results show that heat-treatment of the precursors at 600 °C causes the change of the polymer into amorphous hydrogenated carbon phase, and the reduction of AuCl₄^- anions into zero-valence Au. All of the AuaC:H films exhibit smooth morphologies, with the RMS roughness smaller than 0.80 nm. Au nanoparticles are well dispersed in the amorphous carbon matrix, with size ranging from several to tens of nanometers, and the particle size increases with increasing gold content. The incorporation of Au in the carbon matrix can drastically decrease the resistivity and the resistivity of composite films gradually decreases with increasing Au concentration. AuaC:H films with the Au concentration of 2% and 4% show much better friction-reduction and wear-resistance than aC:H film. PACS 81.15.Np; 81.07.-b; 81.40.Pq     

Synthesis and structure of nitrogenated tetrahedral amorphous carbon films prepared by nitrogen ion bombardment

The tetrahedral amorphous carbon (ta-C) films with more than 80% sp³ fraction firstly were deposited by filtered cathode vacuum arc (FCVA) technique. Then the energetic nitrogen (N) ion was used to bombard the ta-C films to fabricate nitrogenated tetrahedral amorphous carbon (ta-C:N) films. The composition and structure of the films were analyzed by visible Raman spectrum and X-ray photoelectron spectroscopy (XPS). The result shows that the bombardment of energetic nitrogen ions can induce the formation of CN bonds, the conversion of C-C bonds to CC bonds, and the increase of size of sp² cluster. The CN bonds are made of CN bonds and C-N bonds. The content of CN bonds increases with the increment of N ion bombardment energy, but the content of C-N bonds is inversely proportional to the increment of nitrogen ion energy. In addition, C≡N bonds are not existed in the films. By the investigation of AFM (atom force microscopy), the RMS (root mean square) of surface roughness of the ta-C film is about 0.21 nm. When the bombarding energy of N ion is 1000 eV, the RMS of surface roughness of the ta-C:N film decreases from 0.21 to 0.18 nm. But along with the increment of the N ion energy ranging from 1400 to 2200 eV again, the RMS of surface roughness of the ta-C:N film increases from 0.19 to 0.33 nm.     

Reduced graphene oxide foils for ion stripping applications

ABSTRACT

Reduced graphene oxide (rGO) films can be employed as ion strippers in an accelerator. They show some advantages with respect to the graphite foils, due to their high thermal and electrical conductivity, low density, high mechanical resistance and high stability. Thin graphene oxide (GO) films with a sub-micron thickness have been synthesized and transformed into reduced GO (rGO) by ion beam irradiations. Physical characterizations of the pristine and ion irradiated GO films have been performed. Measurements of stripping efficiency have been carried out by using helium, lithium, carbon and oxygen ion beams. The rGO stripper films demonstrate a significantly high charge production, comparable to that of the graphite films but with the advantage of a longer lifetime.     

The study of ion mixed amorphous carbon films on single crystal silicon by C ion implantation

Amorphous-carbon (a-C) films were deposited on a single-crystal silicon substrate by vacuum vapor deposition system and these amorphous carbon films were implanted with 110 keV C⁺ at fluences of 1 × 10¹⁷ ions/cm². The effect of ion mixing on the surface morphology, friction behavior and adhesion strengths of amorphous carbon films was examined making use of atomic force microscopy (AFM), ball-on-disk reciprocating friction tester, nano-indentation system and scanning electron microscope (SEM). The changes in chemical composition and structure were investigated by using X-ray photoelectron spectroscopy (XPS). The results show that the anti-wear life and adhesion of amorphous carbon films on the Si substrates were significantly increased by C ion implantation. The SiC chemical bonding across the interface plays a key role in the increase of adhesion strength and the anti-wear life of amorphous carbon film. The friction and wear mechanisms of amorphous carbon film under dry friction condition were also discussed.     

Direct-energy processes and phase transitions in silicon

Summary The phase transition of amorphous to single-crystal silicon has been investigated not only by conventional heating in a furnace but under direct-energy processes like pulsed-laser and ion beam irradiation. The first method allows the experimental determination of the free-energy-temperature diagram for amorphous, liquid and crystalline silicon. Due to the very fast heating and cooling the amorphous-to-liquid transition can be investigated in both directions. Ion beam irradiation induces either a layer-by-layer amorphization or crystallization by the movement of the initial α-Si/c-Si interface according to the substrate temperature. The two processes are governed by different types of defects created by the beam in the amorphous and in the crystalline side of the interface. The existence of a native-oxide layer at the interface between single crystal and deposited layer retards the ion beam crystallization until oxygen atoms are dispersed by beam mixing in the matrix. A recent alternative way of crystallizing deposited layers is by short high-temperature anneals obtained by incoherent-light irradiations. In this case the rupture of the native-oxide layer is achieved by the agglomeration of oxide into beads, thus allowing the realignment. This technique appears to be particularly promising for several technological applications. In honour of Prof. Fausto Fumi on the occasion of his retirement from teaching.