MONTE CARLO STUDIES OF RADIATION DAMAGE INDUCED BY FUSION:DYNAMIC SIMULATION OF SPUTTERING

In this paper, the sputtering caused by fusion of ⁴He particles in the first wall materials is investigated by using the dynamic Monte Carlo simulation, which is based on the binary collision approximation. The dependences of sputtering yields on the incident energy and angle, as well as the comparisons of results calculated using the Monte Carlo methed with results from experiments, are discussed. Energy spectrum and angular distributions of sputtered species, the depth of origin of the sputtered particles as well as range distributions of incident ions are given. From a comparison between the related experimental data and the calculated results with static and dynamic simulation it has been found that a better agreement is obtained for dynamic simulation.     

Sputtering studies with the Monte Carlo Program TRIM.SP

The Monte Carlo Program TRIM.SP (sputtering version of TRIM) was used to determine sputtering yields and energy and angular distributions of sputtered particles in physical (collisional) sputtering processes. The output is set up to distinguish between the contributions of primary and secondary knock-on atoms as caused by in- and outgoing incident ions, in order to get a better understanding of the sputtering mechanisms and to check on previous theoretical models. The influence of the interatomic potential and the inelastic energy loss model as well as the surface binding energy on the sputtering yield is investigated. Further results are sputtering yields versus incident energy and angle as well as total angular distributions of sputtered particles and energy distributions in specific solid angles for non-normal incidence. The calculated data are compared with experimental results as far as possible. From this comparison it turns out that the TRIM.SP is able to reproduce experimental results even in very special details of angular and energy distributions.     

离子轰击入射角对溅射参数的影响

本文用基于两体碰撞近似的蒙特-卡罗模拟方法研究离子轰击入射角对溅射参数的影响,讨论了入射角与溅射产额、溅射粒子能谱、角分布和阈能的关系,并把计算结果与某些半经验公式和实验数据进行了比较。 关键词：     

Self-sputtering and reflection

Selfsputtering and reflection are investigated with the Monte Carlo program TRIMSP. The results include particle and energy reflection coefficients, sputtering yields and sputtered energy versus incident angle and energy. Angular and energy distributions of reflected and sputtered particles are also given. Reflection and sputtering values are compared to show their contributions to selfsputtering. A comparison of calculated sputtering yields and sputtering efficiencies (sputtered and reflected energy) with experimental data is carried out. The systems investigated are mainly the bombardement of C, Ni, and W with self-ions at low energies. All global results are summarized in graphs, where scaling properties are utilized including the sputtering yield in a generalized form.     

ADATOM, VACANCY AND SPUTTERING YIELDS OF ENERGETIC Pt ATOMS IMPACTING ON Pt(100) BY MOLECULAR DYNAMICS SIMULATION

We have studied the influence of incident atoms with low energy on the Pt(100) surface by molecular dynamics simulation. The interaction potential obtained by the embedded atom method (EAM) was used in the simulation. The incident energy changes from 0.1eV to 200eV, and the target temperature ranges from 100 to 500 K. The target scales are 6×6×4 and 8×8×4 fcc cells for lower and higher incident energies, respectively. The adatom, sputtering, vacancy and backscattering yields are calculated. It was found that there is a sputtering threshold for the incident energy. When the incident energy is higher than the sputtering threshold, the sputtering yield increases with the increase of incident energy, and the sputtering shows a symmetrical pattern. We found that the adatom and vacancy yields increase as the incident energy increases. The vacancy yields are much higher than those obtained by Monte Carlo simulation. The dependence of the adatom and sputtering yields on the incident energy and the relative atomistic mechanisms are discussed.     

Plasma-facing surface estimation in the presence of oblique magnetic field

Useful analytical approximation formulas for the sheath electric potential profile in the presence of secondary electron emission in oblique magnetic field is suggested.The potential distributions calculated with the proposed model are in good agreement with the respective simulations perfomed with a combined PIC and Monte Carlo code ELECTRAN. The influence of the magnetic field inclination angle on the angular and energy distributions of ions incident on plasma-facing components (PFC) and thus on the effective sputtering yield is analyzed.     

MONTE CARLO SIMULATION OF THE ION BEAM ENHANCED DEPOSITION OF SILICON NITRIDE FILMS

In this paper, the growth process of silicon nitride films by ion beam enhanced depo-sition (IBED) is investigated by using the dynamic Monte Carlo simulation, which is based on the binary collision approximation. The effects of the incident angles, energies of the bombarded ions and the interaction potentials on the composition of the films are discussed. The successive and alternate deposition process of silicon and implantation of nitrogen ions have been applied to simulate the actual continuous and synchronous process of IBED. The relationship between the calculated composition of the films and the ion/atom arrival ratio of implanted nitrogen ions to deposited silicon atoms has been established. The composition profile obtained by computer simulation is in good agreement with the experimental results.     

Rapidity dependence of multiplicity distributions in proton-nucleus collisions at 360 GeV/c

Multiplicity distributions in various rapidity intervals for charged particles produced in collisions of 360 GeV/c protons with aluminium (Al) and gold (Au) targets are presented. The data were analysed separately for the forward and backward hemispheres. Each distribution is well described by a negative binomial distribution. The experimental distributions are compared with the predictions of the multichain model calculated by the Monte Carlo program MCMHA in which the intranuclear cascade process is included, and also with the Lund Monte Carlo FRITIOF. The results of MCMHA reproduce quite well the multiplicity distributions for various rapidity intervals.     

用自洽的蒙特卡罗—流体结合模型模拟溅射过程

 采用自洽的蒙特卡罗－流体结合模型对溅射过程进行模拟,以了解等离子体粒子行为与溅射参数的关系。溅射过程包括气体放电和溅射原子传输。对于气体放电,蒙特卡罗部分模拟快电子和快气体原子,而流体部分则描述离子和慢电子。对于溅射原子传输,蒙特卡罗部分模拟溅射原子的碰撞过程,而流体部分则描述溅射原子的扩散和漂移。模拟的结果包括：等离子体粒子的密度和能量分布;不同电离机制对气体原子和溅射原子电离的贡献;不同等离子体粒子对阴极溅射碰撞的贡献;溅射原子的密度分布;溅射场和溅射粒子相对于入射离子能量和角度的分布;溅射原子经碰撞后在整个等离子体区的分布。     

Ep≤63 GeV 质子入射铅、铋引起的中子产生双微分截面的模拟(英文)

加速器驱动次临界系统(ADS) 液态Pb-Bi 散裂靶的设计中,需要可靠的理论计算工具精确地预言几个GeV 能量范围的质子引起的散裂反应产生的各种粒子和核素。利用蒙特卡罗模拟软件包Geant4 计算研究了800 MeV至3 GeV 质子入射铅、铋材料引起的中子产生双微分截面。比较了Geant4 不同物理模型得到的模拟结果与现有的实验数据。其中,Geant4 的QGSP BERT和QGSP INCL ABLA 物理模型模拟结果很好地再现了实验数据。本工作证实了Geant4 蒙特卡罗模拟软件包适合用于能量高达3 GeV 的质子入射铅、铋引起的中子产生双微分截面的模拟计算。A detailed design of the liquid Pb-Bi spallation target of the Accelerator Driven Systems (ADS) requires powerful and reliable computational tools that can accurately predict particles and nuclides production by the proton induced spallation reactions in the energy range of a few GeV. In this paper, the neutron production double-differential cross sections for Pb and Bi target materials at incident proton kinetic energies between 800 MeV and 3 GeV are studied by calculations with Monte Carlo simulation package Geant4. The simulated results of Geant4 with several physics models are compared with available experimental data. The simulated results generated by QGSP BERT and QGSP INCL ABLA physics models of Geant4 well reproduce the available experimental data. The present results validated that Geant4 Monte Carlo simulation package is suitable for simulations of neutron production double-differential cross sections of proton induced reaction on Pb and Bi targets in the incident energy range up to 3 GeV.     

Distribution of the Coulomb microfield within an ion cluster

The microfield distribution function in clusters was studied by simulation using the molecular dynamics and Monte Carlo methods. The results obtained were compared with microfield distributions in infinite plasma. It was shown that the calculated distributions have the same asymptotics. However, the position of the maximum and the existence of additional extrema depend on the cluster type and size. The dependence of the microfield expectation and variance on the number of cluster particles was also studied.     

沉积粒子能量对薄膜早期生长过程的影响

利用Monte Carlo(MC)模型研究了能量粒子对薄膜生长的初始阶段岛膜的形貌和岛的尺寸的影响,沉积粒子的能量范围为:0—0.7eV.在模型中考虑了原子沉积、吸附原子扩散和蒸发等过程,并详细考虑了临近和次临近原子的影响.结果表明,在所采用的参量范围内不同的基底温度情况下,能量粒子的影响有很大的区别.低基底温度情况下,沉积粒子强烈地影响着薄膜的生长过程中,岛膜的形貌、数量和尺寸随能量粒子的能量增加而有很大的变化.分析表明,这些变化都是由于能量粒子的介入使得表面吸附粒子的扩散能力增强所致 关键词： 薄膜生长 Monte Carlo方法 扩散     

Residual polarization of non-coherently backscattered linearly polarized light: the influence of the anisotropy parameter of the scattering medium

The effect of preservation of the residual polarization of backscattered light in the case of multiply scattered disordered media illumination by a linearly polarized plane wave is examined using the path-integral approach and Monte Carlo simulation. Disordered ensembles of non-interacting dielectric particles are considered as the model of scattering media. The influence of the anisotropy parameter of the scattering system on the degree of residual polarization is analysed. Experimental results obtained for various scattering systems at different wavelengths of illuminating light are in satisfactory agreement with the results of theoretical analysis and Monte Carlo simulation. The dependence of statistical properties of the polarization states of backscattered field partial components, such as probability distributions of ellipticity, on the anisotropy parameter is studied.     

Monte Carlo方法在单粒子翻转数值模拟中的应用

描述了在单粒子翻转数值模拟中的一种有效方法-Monte Carlo方法,并对该方法中的粒子输运过程和相关的随机抽样进行了描述.对14MeV的中子从存储器硅片表面随机入射引起的单粒子翻转进行了计算和分析,同时计算了Monte Carlo方法引起的误差.     

Decay vertex reconstruction and 3-dimensional lifetime determination at BESⅢ

This paper focuses mainly on the vertex reconstruction of resonance particles with a relatively long lifetime such as KSO, A, as well as on lifetime measurements using a 3-dimensional fit. The kinematic constraints between the production and decay vertices and the decay vertex fitting algorithm based on the least squares method are both presented. Reconstruction efficiencies including experimental resolutions are discussed. The results and systematic errors are calculated based on a Monte Carlo simulation.     

烟尘中电磁波传输特性的Monte Carlo模拟

根据等效颗粒模型和分形理论,运用Mie理论和离散偶极子近似方法分别计算了烟尘簇团粒子在波长为06328?μm的电磁波入射情况下的单次散射特性.根据辐射输运理论,利用Monte Carlo方法对电磁波在烟尘中的传输特性进行数值计算,给出烟尘中反射率和透射率随入射角和烟尘厚度变化的数值结果,并分析了入射角、烟尘粒子的密度和厚度对反射率和透射率的影响.这为研究电磁波在密集分布介质中的传输特性提供了一种方法. 关键词： 烟尘粒子 离散偶极子近似 传输特性 Monte Carlo模拟     

俄歇电子能谱中背散射修正因子的计算

利用经过我们修正并简化的“完全扩散”电子散射模型,计算了俄歇电子能谱定量分析中的背散射修正因子。得到的结果与志水隆一等人用复杂的蒙特-卡罗计算得到的结果很接近,并优于Reuter的经验公式和Love等人用简单的蒙特-卡罗计算得到的拟合公式。我们的计算方法很简便,可以方便地应用于各种实验条件,不需要像志水隆一等人那样进行内插和外推。 关键词：     

LES-DSMC方法研究超细颗粒气固两相流动过程

采用考虑颗粒脉动流动对气相湍流流动影响的大涡模拟(LES)研究气相湍流,采用直接模拟蒙特卡罗方法(DSMC)模拟颗粒间的碰撞。单颗粒运动满足牛顿第二定律,颗粒相和气相相间作用的双向耦合由牛顿第三定律确定,考虑超细颗粒间的van der Waals作用力。数值模拟垂直管内超细颗粒气固两相流动,对颗粒相速度、浓度以及团聚物流动过程进行分析。     

The scattering spectra and color of disperse systems of weakly absorbing particles

The scattering spectra of weakly absorbing systems of spherical particles are calculated using various approximate and numerical methods. Comparative estimates are made for applicability of the single-scattering and mean-field approximations and the Monte Carlo computer simulation for different scattering multiplicities. The results of the calculations well agree with the experimental scattering spectra of the crystalline lens. Based on the spectral characteristics obtained, the chromaticity coordinates are calculated and regularities in variations of the color characteristics are analyzed as functions of the disperse system parameters.