硅基1.55 μm可调谐共振腔窄带光电探测器的研究

制作了一种低成本硅基1.55 μm可调谐共振腔增强型探测器.首次获得硅基长波长可调谐共振腔探测器的窄带响应,共振峰量子效率达44％,峰值半高宽为12.5nm,调谐范围14.5nm,并且获得1.8 GHz的高频响应.本制作工艺不复杂,成本低,有望用于工业生产.     

具有宽调谐范围的微纳光机电系统可调谐垂直腔面发射激光器研究

基于微纳机械技术设计得到了可调谐垂直腔面发射激光器结构,将具有Al_0.8Ga_0.2As牺牲层结构的DBR反射镜制备成微纳光机电系统,并与多量子阱有源区光纵向耦合结构相结合.其中,微纳光机电DBR结构不再是简单的分布布拉格反射镜,而是对光波具有高调制作用的可动微纳机械反射镜系统,并在静电力作用下可以动态调谐VCSEL谐振腔的激射波长.实验结果显示,当激光器调谐电压从0 V增加到7 V时,对应激射波长将从968.8 nm蓝移到950 nm,整个调谐范围达到了18.8 关键词： 垂直腔面发射激光器 微纳光机械 波长可调谐     

宽范围可调谐内腔液晶垂直腔面发射激光器设计与研究

为增加可调谐激光器的波长调谐范围,提高系统的可靠性和稳定性,基于液晶的电控双折射特性,设计了一种中心波长为852 nm的内腔液晶可调谐垂直腔面发射激光器结构。分析了该结构获得宽范围波长调谐和单偏振稳定输出的物理原理,利用传输矩阵法进一步计算整个器件下不同液晶层厚度所对应的反射谱,得出不同液晶厚度和折射率下激光器的激射波长。结果表明,液晶可调谐激光器单偏振波长调谐范围达到31 nm,调谐效率大于10 nm/V。     

多参量可调谐的Bragg波导光栅滤波器设计(英文)

为了解决基于光纤布喇格光栅和压电陶瓷结构的任意光脉冲整形器在动态调谐时存在不足的问题,提出并设计了一种波长、相位、幅度参量独立可调的Bragg波导光栅滤波器,以实现谐振波长及谐振波相位快速独立的线性调控.理论分析表明:波长和相位的理论调谐效率分别为15.6pm/V和0.2π/V,滤波器的输出光强度可以通过偏振旋转器控制.基于转移矩阵理论的仿真分析发现:该滤波器在蚀刻占空比为1/2时反射率最大,光栅长度为10.869mm,蚀刻深度大于100nm时,可以获得98.4%以上的反射率和大于0.14nm的带宽;增大波长调谐电压会进一步降低滤波带宽.     

基于Pt/GaN/AlGaN异质结高响应度双波段紫外探测器

提出一种在AlGaN基PIN器件的p-GaN表面上沉积Pt,形成肖特基势垒(SB)-PIN异质结器件,器件的能带和载流子的输运发生了变化,这种新型光电探测器实现了双波段紫外探测,可分别工作在光伏和光电导模式下。器件在275 nm波长的紫外光照射的负偏置电压下,工作模式为光伏探测,当入射光功率密度为100μW/cm²,偏置电压为-10 V时,器件得到最大响应度(0.12 A/W);当偏置电压为-0.5 V时,器件得到最大探测率(1.0×10¹³ cm·Hz^1/2·W^-1)。器件在正偏置电压工作模式下可作为高响应、高增益的光电导探测器,当偏置电压为+10 V时,用275 nm和365 nm波长的紫外光照射(光功率密度为100μW/cm²),器件的响应度分别为10 A/W和14 A/W,外量子效率分别为4500%和4890%。所设计的双波段多功能器件将极大地扩展基于AlGaN的紫外探测器的用途。     

谐振腔增强型光电探测器的角度相关特性研究

采用MBE生长In_0.3Ga_0.7As/GaAs和GaInNAs/GaAs量子阱为有源区的器件结构材料,制备出工作在1060nm及1310nm波段的谐振腔增强型光电探测器.对谐振腔增强型光电探测器的空间角度相关特性进行了实验与物理分析,改变光束入射角度,器件谐振接收波长可在大范围调变.     

石墨点阵柱状光子晶体共振腔的温度特性

构造了一种二维GaAs石墨点阵柱状光子晶体共振腔. 利用时域有限差分方法计算了这种光子晶体共振腔TE_y模的共振峰随温度变化的情况. 计算结果表明这种结构的光子晶体共振腔的共振峰主峰随温度呈分段线性变化趋势,且具有1.60 nm/℃以上的温度响应灵敏度. 同时,计算结果显示,这种结构的光子晶体共振腔具有很好的频率开关特性. 最后,利用计算结果解释了频率开关特性的成因. 关键词： 光子晶体 温度 共振腔 开关     

量子阱共振腔增强型光电探测器的高功率特性

通过测量1.55 μm量子阱共振腔增强型光电探测器的光电流随反向电压和光功率的变化关系,以及模拟能带结构、电场分布等特性,研究了量子阱共振腔增强型光电探测器的高功率特性.分析了光电流的产生机制,测量了1.064 μm量子阱共振腔增强型光电探测器的光电响应,模拟了具有不同势垒高度的量子阱共振腔增强型光电探测器的光电响应.从实验和模拟两方面证明了量子阱的势垒高度是影响量子阱共振腔增强型光电探测器高功率特性的最主要因素.     

基于单波长外腔共振和频技术产生波长可调谐589 nm激光及钠原子饱和荧光谱的测量

本文基于新型单波长外腔共振和频技术实现了转换效率高、波长可调谐589 nm激光的输出, 其中基频光波长分别为1583 nm和938 nm, 和频晶体为周期极化铌酸锂. 在1583 nm激光频率被锁定到外部环形腔腔模后, 通过对938 nm激光的频率扫描实现了输出功率4.96 mW, 调谐范围7 GHz的589 nm激光输出, 并采用声光调制器的伺服反馈技术有效提高了输出功率的稳定性. 最后采用该光源对钠原子在348—413 K (75—140 ℃)时D₂线的饱和荧光谱进行了测量. 观察到了多普勒背景下钠D₂a, D₂b以及Crossover的亚多普勒结构, 其均可为589 nm频率的锁定提供参考信号. 关键词： 单波长外腔共振 和频 589 nm 钠原子饱和荧光谱     

胆甾相液晶激光器的调谐特性研究

基于胆甾相液晶螺距及折射率随温度与电场变化的特性, 研究了温度与电场对液晶染料可调谐激光器发射特性的影响. 首先探讨了手性剂浓度、温度与液晶螺距的关系, 制作了液晶染料可调谐激光器, 在温度23–35℃变化时, 其发射波长调谐范围为618.90–594.76 nm, 达到24.14 nm, 在电压0–9 V 变化时, 其发射波长调谐范围为617.40–608.11 nm, 共9.29 nm. 关键词： 可调谐激光器 胆甾相液晶 激光染料     

Electrically ultra-fast tunable optical filter employing HiBi fiber and phase modulator

An electrically tunable optical filter with ultra-fast tuning time of a few picoseconds is proposed and demonstrated. The filter consists of a phase modulator with HiBi pigtails sandwiched between two polarizers. Tuning of 6.62 nm for a 16.06 nm FSR filter is obtained with an applied voltage of 0.9 V. Tuning speed at 10 Gb/s and risetime of 40 ps is demonstrated with a frequency shift keying modulation experimental setup. Faster tuning speed is potential since the scheme is based on the electro-optic effect of the LiNO₃ crystal with sub-picosecond response time.     

Morphology and optical properties of p-type porous GaAs(1 0 0) layers made by electrochemical etching

Porous GaAs layers were formed by electrochemical etching of p-type GaAs(1 0 0) substrates in HF solution. A surface characterization has been performed on p-type GaAs samples using X-ray photoelectron spectroscopy (XPS) technique in order to get information about the chemical composition, particularly on the surface contamination. According to the XPS spectra, the oxide layer on as-received porous GaAs substrates contains As₂O₃, As₂O₅ and Ga₂O₃. Large amount of oxygen is present at the surface before the surface cleaning.Compared to untreated GaAs surface, room temperature photoluminescence (PL) investigations of the porous layers reveal the presence of two PL bands: a PL peak at ∼871 nm and a “visible” PL peak at ∼650-680 nm. Both peak wavelengths and intensities varied from sample to sample depending on the treatment that the samples have undergone. The short PL wavelength at 650-680 nm of the porous layers is attributed to quantum confinement effects in GaAs nano-crystallites. The surface morphology of porous GaAs has been studied using atomic force microscopy (AFM). Nano-sized crystallites were observed on the porous GaAs surface. An estimation of the mean size of the GaAs nano-crystals obtained from effective mass theory and based on PL data was close to the lowest value obtained from the AFM results.     

Defect modes tuning of one-dimensional photonic crystals with lithium niobate and silver material defect

In this paper, a novel PCs defect mode is designed by inserting a Ag/LiNbO₃/Ag sandwich structure into periodically stacked TiO₂/MgF₂ dielectric superlattice. The band gap calculation is conducted using transfer matrix method. An emergence of defect mode around 525 nm is demonstrated. By applying an external voltage on this defect mode, remarkable wavelength tuning can be achieved. At normal incidence, a tuning bandwidth up to 70 nm is obtained by moderate change of external voltage from −250 to 250 V. This feature can be employed to fabricate practical tunable filters in visible region.     

Optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostructure

We report on measurements of optically induced gate voltage spectroscopy in a GaAs/AlGaAs heterostructure with a high mobility 2-dimensional electron gas (2DEG) in a thin (55 nm) GaAs layer. The optically induced gate voltage between the front gate and the 2DEG is sensitive to excess electron concentrations below 10⁷ cm⁻². In the gate voltage spectrum we observe a peak below the bandgap energy of GaAs, which is not observed in the photocurrent, luminescence or excitation spectra. Due to the extremely high sensitivity of this technique we attribute this below bandgap signal to very weak absorption lines below the GaAs bandgap energy by impurity bands or defect absorption. The fall-off of the below bandgap signal varies as exp (hω/E₀), where E₀ is an indicative for the quality of the heterostructure.     

LaCaMnO3 thin film laser energy/power meter

A prototype laser energy/power meter was designed based on the anisotropic Seebeck effect of LaCaMnO₃ thin film grown on vicinal cut LaAlO₃ substrate. The optical response of this device to the pulsed laser and the chopped CW laser was measured from infrared to ultraviolet. The peak voltage of the measured signal shows a good linear relation to the laser energy and power in the measured range. It was shown that at 1064 nm wavelength, this prototype device demonstrates higher sensitivity than that of commercial device.     

Defect modes and wavelength tuning of one-dimensional photonic crystal with lithium niobate

The defect state of the one-dimensional photonic crystals consisting of lithium niobate and air is theoretically investigated. By applying an external voltage on the defect layer, remarkable wavelength tuning can be achieved. The relation between the wavelength peak and the external voltage is a straight line and the tuning rate is 1.358 nm/kV. The dependence of the wavelength peak on the angle of incidence was also observed at each applied voltage. This feature can be employed to fabricate tunable filters.     

GaAs/AlAs super-flat interfaces in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells grown on (4 1 1)A GaAs substrates by MBE

Effectively atomically flat GaAs/AlAs interfaces over a macroscopic area (“super-flat interfaces”) have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observed at 4.2 K from each GaAs/AlAs or GaAs/(GaAs) (AlAs) QW grown on (4 1 1)A GaAs substrate. The full-width at half-maximum (FWHM) of a PL peak for GaAs/AlAs QW with a well width ( ) of 4.2 nm was 4.7 meV and that for GaAs/(GaAs) (AlAs) QW with a smaller well width of 2.8 nm (3.9 nm) was 7.6 meV (4.6 meV), which are as narrow as that for an individual splitted peak for conventional GaAs/AlAs QWs grown on (1 0 0) GaAs substrates with growth interruption. Furthermore, only one sharp peak was observed for each GaAs/(GaAs) (AlAs) QW on the (4 1 1)A GaAs substrate over the whole area of the wafer (7 7 mm ), in contrast with two- or three-splitted peaks reported for each GaAs/AlAs QW grown on the (1 0 0) GaAs substrate with growth interruption. These results indicate that GaAs/AlAs super-flat interfaces have been realized in GaAs/AlAs and GaAs/(GaAs) (AlAs) QWs grown on the (4 1 1)A GaAs substrates.     

Polarization-independent rapidly tunable optical add-drop multiplexer utilizing non-polarizing beam splitters in Ti:LiNbO3

A polarization-independent four-port wavelength-tunable optical add drop multiplexer (OADM) that utilizes non-polarizing relaxed beam splitters has been analyzed and demonstrated in Ti:LiNbO₃ at the 1530 nm wavelength regime. The design utilizes an asymmetric interferometer configuration with strain induced index grating for polarization coupling along its arms that are shifted in position relative to each other. Experimental results of the filter response agree with theoretical predictions. Electrooptic tuning over a range of 15.7 nm at a rate of 0.08 nm/V has been measured. A temporal response < 46 ns to a 20 V step change in tuning voltage has been demonstrated. Fiber-to-fiber insertion loss is ~ 6.5 dB.     

Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2-GaAs metal-oxide-semiconductor devices

This work deals with the fabrication of a GaAs metal-oxide-semiconductor device with an unpinned interface environment. An ultrathin (∼2 nm) interface passivation layer (IPL) of ZnO on GaAs was grown by metal organic chemical vapor deposition to control the interface trap densities and to prevent the Fermi level pinning before high-k deposition. X-ray photoelectron spectroscopy and high resolution transmission electron microscopy results show that an ultra thin layer of ZnO IPL can effectively suppress the oxides formation and minimize the Fermi level pinning at the interface between the GaAs and ZrO₂. By incorporating ZnO IPL, GaAs MOS devices with improved capacitance-voltage and reduced gate leakage current were achieved. The charge trapping behavior of the ZrO₂/ZnO gate stack under constant voltage stressing exhibits an improved interface quality and high dielectric reliability.     

Aligned carbon nanotubes catalytically grown on iron-based nanoparticles obtained by laser-induced CVD

Iron-based nanoparticles are prepared by a laser-induced chemical vapor deposition (CVD) process. They are characterized as body-centered Fe and Fe₂O₃ (maghemite/magnetite) particles with sizes ≤5 and 10 nm, respectively. The Fe particles are embedded in a protective carbon matrix. Both kind of particles are dispersed by spin-coating on SiO₂/Si(1 0 0) flat substrates. They are used as catalyst to grow carbon nanotubes by a plasma- and filaments-assisted catalytic CVD process (PE-HF-CCVD). Vertically oriented and thin carbon nanotubes (CNTs) were grown with few differences between the two samples, except the diameter in relation to the initial size of the iron particles, and the density. The electron field emission of these samples exhibit quite interesting behavior with a low turn-on voltage at around 1 V/μm.