Self-organized growth of quantum dot-tunnel barrier systems

Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dot-tunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during the molecular beam epitaxial growth of an Al_0.33Ga_0.67As/GaAs heterostructure. The quantum dot is connected via self-aligned tunnelling barriers to source and drain electrodes. In-plane-gate electrodes are also realized within the epitaxial growth process. The paper describes the fabrication process of the device and the characterization of the direct grown quantum dot-tunnel barrier system using scanning-electron microscopy, atomic-force microscopy and transport spectroscopy.     

Magnetic resonance force microscopy quantum computer with tellurium donors in silicon

We propose a magnetic resonance force microscopy (MRFM)-based nuclear spin quantum computer using tellurium impurities in silicon. This approach to quantum computing combines well-developed silicon technology and expected advances in MRFM. Our proposal does not use electrostatic gates to realize quantum logic operations.     

Solid-state quantum computation—a new direction for nanotechnology

We review current proposals for six types of solid-state quantum computers. We discuss the general requirements for solid-state quantum computers and describe proposals which employ superconducting junctions, electron orbitals in quantum dots, electron spin resonance, nuclear spins of impurity atoms, and nuclear spins in a crystal lattice. We also describe our proposed nuclear spin quantum computer based on magnetic resonance force microscopy. Finally, we describe our numerical method for modeling quantum transformations with a large number (up to 1000) of qubits.     

6H–SiC Nanoparticles Integrated with an Atomic Force Microscope for Scanning Quantum Sensors

JETP Letters - We fabricate a quantum magnetic field sensor based on the silicon vacancy centers in 6H–SiC using atomic force microscopy technique. The quantum sensing is based on optically...     

CdSe quantum dot formation induced by amorphous Se

The mechanism allowing the transition from a two-dimensional strained layer of CdSe on ZnSe to self-assembled islands induced by the use of amorphous selenium is still not fully understood. For a better understanding, atomic force microscopy and transmission electron microscopy studies were performed on CdSe films with a thickness close to that for quantum dot formation. Below this thickness, the sample surface results in undulations along the [1 1 0] crystal direction, while few quantum dots are situated in the wave valleys. Plan view transmission electron microscopy studies reveal a strong anisotropy of the islands and show that the Se desorption conditions are crucial.     

Sizes and fluorescence of cadmium sulfide quantum dots

Cadmium sulfide quantum dots have been synthesized by wet chemical deposition from an aqueous solution. The sizes of the quantum dots determined by dynamic light scattering directly in the colloidal solution and by intermittent-contact atomic force microscopy in the dry sediment agree with each other. It has been found that splitting of the fluorescence peaks of the quantum dots can be affected by the disorder of the atomic structure of cadmium sulfide quantum dots.     

Two-electron photon emission from metallic quantum wells

Unusual emission of visible light is observed in scanning tunneling microscopy of the quantum well system Na on Cu(111). Photons are emitted at energies exceeding the energy of the tunneling electrons. Model calculations of two-electron processes which lead to quantum well transitions reproduce the experimental fluorescence spectra, the quantum yield, and the power-law variation of the intensity with the excitation current.     

Colloidal semiconductor quantum dots: Potential tools for new diagnostic methods

We present and discuss the application of colloidal semiconductor quantum dots for diagnostic purposes, with special emphasis for cancer. We prepared and applied core-shell cadmium sulfide-cadmium hydroxide (CdS/Cd(OH)₂) semiconductor quantum dots in aqueous medium. Tissue and cells labeling was evaluated by laser scanning confocal microscopy as well as by conventional fluorescence microscopy. The procedure presented in this work, shown to be a promising tool for fast, low-cost and precise cancer diagnostic protocols.     

Structural and optical analysis of size-controlled InAs quantum dashes

Self-organized InAs and InGaAs quantum dashes have been investigated by chemically sensitive scanning transmission electron microscopy and photoluminescence spectroscopy. The quantum dashes exhibit a triangular cross section. Using electron energy loss spectroscopy, we show that no intermixing between quantum dashes and embedding barrier occurs during growth. By adjusting the nominal thickness of the InAs layer, the emission wavelength of the InAs quantum dashes can be tuned between 1.37 and 1.9 μm in a straightforward way.     

Plasma synthesis and liquid-phase surface passivation of brightly luminescent Si nanocrystals

While silicon's optical properties are improved at the nanoscale, they also become highly sensitive to the properties of the surfaces and interfaces of silicon nanostructures. For instance, while reported quantum yields for photoluminescence of silicon quantum dots covered by a native oxide are often in the few percent range, quantum yields as high as 30% have been found in quantum dots whose surfaces were passivated by covalently bonded organic molecules. In this paper, we describe an approach that is based on the gas phase synthesis of silicon quantum dots in a nonthermal plasma, and the subsequent organic surface passivation in the liquid phase. Nanocrystals are formed within a few milliseconds with a high mass yield in a nonthermal plasma. Various organic ligands such as octadecene, dodecence, and styrene are grafted onto the nanocrystal surfaces in a reaction known as hydrosilylation. Materials are characterized through transmission electron microscopy, atomic force microscopy, and fluorescence measurements. The particle size distributions are found to be relatively monodisperse and are well controllable through the plasma process parameters. Photoluminescence quantum yields as high as 60-70% have been achieved for particles luminescing in the red range of the visible spectrum.     

Transmission electron microscopy study of vertical quantum dots molecules grown by droplet epitaxy

The compositional distribution of InAs quantum dots grown by molecular beam epitaxy on GaAs capped InAs quantum dots has been studied in this work. Upper quantum dots are nucleated preferentially on top of the quantum dots underneath, which have been nucleated by droplet epitaxy. The growth process of these nanostructures, which are usually called as quantum dots molecules, has been explained. In order to understand this growth process, the analysis of the strain has been carried out from a 3D model of the nanostructure built from transmission electron microscopy images sensitive to the composition.     

Speedy photoelectric exchange of CdSe quantum dots/mesoporous titania composite system

Two classes of important nano-materials, mesoporous titania (MT) and CdSe quantum dots, are prepared via chemical methods. Rapid immobilization of CdSe quantum dots into mesoporous titania has been achieved and the composite system is characterized by high-resolution transmission electron microscopy and photoluminescence. The band-to-band photoluminescence emission of CdSe quantum dots is blue-shifted for 20 nm after the dots are immobilized into mesoporous titania. Loading CdSe quantum dots into mesoporous titania leads to speedy photoelectric exchange process of the system and a significant rise in photoconductivity (for a factor of 8), which would attract great deal of attention in quantum dots solar cell.     

Direct observation of optically forbidden energy transfer between CuCl quantum cubes via near-field optical spectroscopy

We report, for the first time, evidence of near-field energy transfer among CuCl quantum cubes using an ultrahigh-resolution near-field optical microscopy and spectroscopy in the near UV region at 15 K. The sample was high-density CuCl quantum cubes embedded in a NaCl matrix. Measured spatial distributions of the luminescence intensities from 4.6-nm and 6.3-nm quantum cubes clearly established anticorrelation features. This is thought to be a manifestation of the energy transfer from the lowest state of exciton in 4.6-nm quantum cubes to the first dipole-forbidden excited state of exciton in 6.3-nm quantum cubes, which is attributed to the resonant optical near-field interaction.     

THz imaging of cyclotron emission in quantum Hall conductors

Recent studies of cyclotron emission microscopy on quantum Hall related states are reported. The topics include non-equilibrium between edge and bulk states, current-induced breakdown of the quantum Hall effect, and the emission threshold at hot spots. Experimental method of scanning-type terahertz microscopes developed towards photon-counting level sensitivity is also described.     

Controlled positioning of self-assembled InAs quantum dots on (1 1 0) GaAs

We report on a new approach for positioning of self-assembled InAs quantum dots on (1 1 0) GaAs with nanometer precision. By combining self-assembly of quantum dots with molecular beam epitaxy on in situ cleaved surfaces (cleaved-edge overgrowth) we have successfully fabricated arrays of long-range ordered InAs quantum dots. Both atomic force microscopy and micro-photoluminescence measurements demonstrate the ability to control position and ordering of the quantum dots with epitaxial precision as well as size and size homogeneity. Furthermore, photoluminescence investigations on dot ensembles and on single dots confirm the high homogeneity and the excellent optical quality of the quantum dots fabricated.     

(113)面硅衬底上自组织生长的GeSi量子点及其光荧光

用透射电子显微镜观察了Si(113)衬底上由固态源分子束外延生长的自组织量子点的形貌,测量了其原生及退火后低温下的光荧光谱.对所得结果进行了分析. 关键词：     

A detailed study of physical properties of ZnS quantum dots synthesized by reverse micelle method

In this article, zinc sulfide nanocrystal quantum dots were synthesized by reverse micelle method using polyvinyl pyrrolidone as surfactant. The various crystallite properties of these nanocrystals such as, size, d-spacing, lattice parameter, microstrain, intrinsic stress, X-ray density, specific surface area, dislocation density, porosity, and agglomeration number have been analyzed using X-ray diffraction spectrum. The transmission electron microscopy was used to calculate the size and monitoring morphology of the nanocrystals, while the scanning electron microscopy was utilized to investigate the surface morphology of nanoclusters. The various optical properties of zinc sulfide quantum dots such as absorption coefficient, extinction coefficient, optical band gap energy, Urbach energy, and threshold wavelength have been analyzed using UV-visible data. The photoluminescence was used to study the emission spectra of produced ZnS quantum dots. Moreover, Furrier Transform-Infrared studies revealed that ZnS quantum dots are pure.     

Direct imaging of electron states in open quantum dots

We use scanning gate microscopy to probe the ballistic motion of electrons within an open GaAs/AlGaAs quantum dot. Conductance maps are recorded by scanning a biased tip over the open quantum dot while a magnetic field is applied. We show that, for specific magnetic fields, the measured conductance images resemble the classical transmitted and backscattered trajectories and their quantum mechanical analogue. In addition, we prove experimentally, with this direct measurement technique, the existence of pointer states. The demonstrated direct imaging technique is essential for the fundamental understanding of wave function scarring and quantum decoherence theory.     

Formation and atomic structure of GaSb nanostructures in GaAs studied by cross-sectional scanning tunneling microscopy

GaSb nanostructures in GaAs, grown by metalorganic chemical vapor deposition, were studied with cross-sectional scanning tunneling microscopy. Three different samples were examined, containing a thin quantum well, a quantum well near the critical thickness for dot formation, and finally self-organized quantum dots with base lengths of 5–8 nm and heights of about 2 nm. The dots are intermixed with a GaSb content between 60% and 100%. Also small 3D and 2D islands were observed, possibly representing quantum dots in an early growth stage and quantum dot precursors. All GaSb layers exhibit gaps, which are indications of an island-like growth mode during epitaxy.     

Quantum Dot Research: Current State and Future Prospects

This article reviews the current state of research involving semiconductor quantum dots, provides a brief review of the theory behind their unique properties, and an introduction explaining the importance of quantum dot research. The characteristic shifting of the band gap energy with quantum dot size, as predicted from the density of states for low-dimensional structures, allows experimental measurements to determine the extent to which quantum confinement effects play a role in the resulting properties. A few of the current techniques used to measure the presence and physical characteristics of quantum dots and their energy levels is reviewed, including transmission electron microscopy, optical transmission, and Raman and photoluminescence spectroscopy. Finally, some of the more exciting applications for quantum dots currently being researched for use in the field of optoelectronics are reviewed, including quantum dot infrared photodetectors, quantum dot lasers, and quantum dot solar cells. Comments are made on the current progress and the future prospects of quantum dot research and device applications.