Facile Microwave Approach for Synthesis of Copper–Indium Sulfide Nanoparticles and Study of Their Behavior in Solar Cell

CuInS₂ (CIS) nanoparticles (nps) were synthesized via a microwave approach by adding eight sulfur sources with a new copper precursor, [bis(acetylacetonato)copper(II)]; [Cu(acac)₂]. The products were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, ultraviolet–visible and photoluminescence spectroscopy. Band gap of as-synthesized nps was 2.1 eV that showed about 0.55 eV blue shift in comparison to its bulk type. As observed in other semiconductor systems, the optical absorption blue shift is associated with quantum confinement effects. Thin film of CIS was prepared by doctor’s blade technique and solar cell made from indium transparent oxide/CIS/CdS/Pt layers. I–V characterization was investigated for this cell and fill factor, open-circuit voltage (V _oc) and short-circuit current (I _sc) were achieved.     

Surface morphology and electrical properties of copper thin films prepared by MOCVD

Thin copper films have been grown in a vertical MOCVD (Metal-Organic Chemical Vapor Deposition) reactor using bis(2,2,6,6-tetramethyl-3,5-heptanedionato) copper(II), Cu(thd)₂, as precursor. Deposition has been carried out in a pure hydrogen atmosphere (pressure: 3, 20 mbar) at different substrate temperatures (350–750 ° C). The films have been investigated by profilometry, four-point resistivity measurements, ESCA, AES, XRD, AFM, and Normarsky microscopy. An unusual dependence of the film thickness with deposition time has been observed. Rapid growth occurred in the first minutes resulting in badly conducting films (thickness below 1000 Å). Good electrical resistivities have been obtained above 2000 Å. AFM has been used to gain information about the surface morphology of the films with different thicknesses. The grain size and surface roughness increased with increasing film thickness. Small grains grew in the beginning and the electrical properties have been governed by the highly Ohmic bridges between the individual grains.     

Structural and thermal study of CuInSe2 films

Ternary copper indium Di-selenide (CISe) thin film has been deposited by spin-coating on non-conducting glass slide substrates and a solution prepared by the sol-gel process. At room temperature, correspondingly, CuCl2·2H2O, InCl3·3H2O, and H2SeO3 were employed as precursor source chemicals for Cu, In, and Se ions. The dark brown films adhered effectively to the glass substrates. Energy dispersive X-ray analysis is utilized to assess the thin film's chemical composition, which revealed that the film was close to the stoichiometric ratio and proved the proper elemental composition. The thin film's tetragonal unit cell structure was validated by XRD analysis, and all of the derived lattice parameters (a = 5.8512 A and c = 11.7268 A) are excellent consistent with the previous results. Scherrer's formula yields a crystallite size of 5.94 nm. SEM microtopography of the film surface revealed that the film is homogeneous on the substrate surface, and AFM revealed that the film has a spike-like morphology. UV–Vis spectroscopy was performed in the 300–1400 nm region. The obtained values of the absorption coefficient and band gap are 1.2eV. The thermal analysis is carried out by TGA.     

Properties of polyimide films doped with copper complexes

Polyimide films based on either 3, 3′, 4, 4′-benzophenone tetracarboxylic acid dianhydride or pyromellitic dianhydride with 4,4′-oxydianiline have been doped with copper(I) and copper(II) complexes. High-quality, flexible, glass-cast films have been obtained which exhibit increased softening temperatures and lower polymer decomposition temperatures. The atmosphere and glass sides of the films are quite different. The copper(I) dopant is oxidized on the air side of the film, while the glass side contains predominantly copper (I). In the copper(II) case most of the copper appears on the air side as a silvery substance in the Cu(II) state. Chemical as well as ion etching can remove this material. Electrical resistivity of the copper(II)-doped films is decreased by three to five orders of magnitude relative to the polymer alone.     

激光刻蚀模板中电沉积特殊结构CIGS薄膜

本文利用激光刻蚀模板,在水溶液中电沉积制备金属铜薄膜,讨论了温度、电流、硫酸铜浓度对薄膜形貌的影响. 采用SEM对制备的铜薄膜进行表征,结果表明在沉积温度为30 ℃,沉积电流为4 A·dm^-2(表观工作电流密度),硫酸铜浓度在20 ~ 50 g·L^-1的水溶液中电沉积可以得到中空馒头状和开口碗状结构的铜薄膜. 利用激光刻蚀模板,在离子液体1-丁基-3-甲基咪唑三氟甲磺酸盐([BMI][TfO]) - 30 Vol%丙醇混合电解质中电沉积CIGS薄膜,研究了沉积电势、沉积时间对薄膜形貌的影响. SEM观察发现,在沉积电势为-1.8 V,沉积时间为1.5 h条件下电沉积可以得到近似柱状的簇状花束样的CIGS薄膜, 电沉积铜后再进一步电沉积CIGS,得到了均匀有序的鼓包柱状结构的Cu/CIGS复合薄膜. 用恒电势方波法对制备的薄膜真实表面积进行测试,计算结果表明,与无模板电沉积制备的CIGS薄膜相比,激光刻蚀模板法制备的Cu/CIGS复合薄膜的表面积提高了约8倍.     

Sacrificial adhesion promotion layers for copper metallization of device structures

The adhesion of copper films to adjacent device layers including TiN, Ta, and TaN diffusion barriers is a crucial reliability issue for integrated circuits. We report that ultrathin layers of poly(acrylic acid) (PAA) prepared on barrier surfaces or on the native oxide of Si wafers dramatically increase the interfacial adhesion of Cu films deposited by the H2 assisted reduction of bis(2,2,7-trimethyloctane-3,5-dionato)copper in supercritical carbon dioxide. Similar improvements were achieved on Si wafers using a simple vapor phase exposure of the substrate to acrylic acid prior to metallization. The deposited films and the substrate/Cu interfaces were analyzed by X-ray photoelectron spectroscopy (XPS), electron microscopy, atomic force microscopy, and variable-angle spectroscopic ellipsometry. No trace of the adhesion layer was detected at the interface, indicating it was sacrificial at the deposition conditions used. Moreover, the presence and subsequent decomposition of the PAA layer during deposition substantially reduced or eliminated metal oxides at the substrate interface. For depositions on PAA-treated Si wafers, copper was present primarily as Cu0 at the interface and Si was present only as Si0. On PAA-treated Ta substrates, XPS analysis indicated Ta was present primarily as Ta0 at the metallized interface whereas Ta2O5 dominated the interface of samples prepared without the adhesion layers. The technique can be extended to patterned substrates using adsorption of acrylic acid or thermal/UV polymerization of acrylic acid.     

H-atom abstraction reaction for organic substrates via mononuclear copper(II)-superoxo species as a model for DbetaM and PHM

Hydrogen atom abstraction reactions have been implicated in oxygenation reactions catalyzed by copper monooxygenases such as peptidylglycine alpha-hydroxylating monooxygenase (PHM) and dopamine beta-monooxygenase (DbetaM). We have investigated mononuclear copper(I) and copper(II) complexes with bis[(6-neopentylamino-2-pyridyl)methyl][(2-pyridyl)methyl]amine (BNPA) as functional models for these enzymes. The reaction of [Cu(II)(bnpa)]2+ with H2O2, affords a quasi-stable mononuclear copper(II)-hydroperoxo complex, [Cu(II)(bnpa)(OOH)]+ (4) which is stabilized by hydrophobic interactions and hydrogen bonds in the vicinity of the copper(II) ion. On the other hand, the reaction of [Cu(I)(bnpa)]+ (1) with O2 generates a trans-mu-1,2-peroxo dicopper(II) complex [Cu(II)2(bnpa)2(O2(2-]2+ (2). Interestingly, the same reactions carried out in the presence of exogenous substrates such as TEMPO-H, produce a mononuclear copper(II)-hydroperoxo complex 4. Under these conditions, the H-atom abstraction reaction proceeds via the mononuclear copper(II)-superoxo intermediate [Cu(II)(bnpa)(O2-)]+ (3), as confirmed from indirect observations using a spin trap reagent. Reactions with several substrates having different bond dissociation energies (BDE) indicate that, under our experimental conditions the H-atom abstraction reaction proceeds for substrates with a weak X-H bond (BDE < 72.6 kcal mol(-1)). These investigations indicate that the copper(II)-hydroperoxo complex is a useful tool for elucidation of H-atom abstraction reaction mechanisms for exogenous substrates. The useful functionality of the complex has been achieved via careful control of experimental conditions and the choice of appropriate ligands for the complex.     

单晶硅上化学气相沉积铜薄膜的机理研究

A versatile metal-organic chemical vapor deposition (MOCVD) system was designed and constructed. Copper films were deposited on silicon (100) substrates by chemical vapor deposition (CVD) using Cu(hfac)2 as a precursor. The growth of Cu nucleus on silicon substrates by H2 reduction of Cu(hfac)2 was studied by atomic force microscopy and scanning electron microscopy. The growth mode of Cu nucleus is initially Volmer-Weber mode (island), and then transforms to Stranski-Rastanov mode (layer-by-layer plus island).The mechanism of Cu nucleation on silicon (100) substrates was further investigated by X-ray photoelectron spectroscopy. From Cu2p, O1s, F1s, Si2p patterns, the observed C=O, OH and CF3/CF2 should belong to Cu(hfac) formed by the thermal dissociation of Cu(hfac)2. H2 reacts with hfac on the surface, producing OH. With its accumulation, OH reacts with hfac, forming HO-hfac, and desorbs, meanwhile, the copper oxide is reduced, and thus the redox reaction between Cu(hafc)2 and H2 occurs.     

Charge transport and optical properties of MOCVD-derived highly transparent and conductive Mg- and Sn-doped In2O3 thin films

Mg- and Sn-doped In2O3 (MgIn(x)Sn(y)O(z), 6.0 < x < 16.0; 3.0 < y < 8.0) thin films were grown by low-pressure metal-organic chemical vapor deposition using the volatile metal-organic precursors tris(2,2,6,6-tetramethyl-3,5-heptanedionato)indium(III) [In(dpm)3], bis(2,4-pentanedionato)tin(II) [Sn(acac)2], and bis(2,2,6,6-tetramethyl-3,5-heptanedionato)(N,N,N',N'-tetramethylethylenediamine)magnesium(II) [Mg(dpm)2(TMEDA)]. Films in this compositional range retain the cubic In2O3 bixbyite crystal structure. The highest conductivity is found to be approximately 1000 S/cm for an as-grown film with a nominal composition MgIn14.3Sn6.93O(z). Annealing of such films in a vacuum raises the conductivity to approximately 2000 S/cm. The optical transmission window of the present films is significantly wider than that of typical indium tin oxide (ITO) films from 300 to 3300 nm, and the transmittance is also greater than or comparable to that of commercial ITO films.     

以光辅助MOCVD法在有取向Ni衬底及LAO单晶衬底上制备YBCO外延膜的比较研究

采用光辅助金属有机物化学气相沉积(MOCVD)法,在生长有CeO2/YSZ/Y2O3(YSZ为Y稳定的ZrO2)缓冲层的双轴取向Ni衬底上进行了YBa2Cu3O7-x(YBCO)外延膜生长,并与LaAlO3(100)[LAO(100)]单晶衬底上的YBCO外延膜生长进行了对比.发现在Ni衬底上c轴取向YBCO外延膜的生长温度比LAO衬底上的生长温度低约30℃,但生长速度更快.经分析认为,这种差别主要是由于Ni衬底的热导率比LAO衬底高造成的.Ni衬底及LAO衬底上生长的c轴取向YBCO外延膜的超导极限电流密度(Jc)分别约为0.5 MA/cm2及1.8 MA/cm2.     

Electronic structure of a metal-organic copper spin-1/2 molecule: bis(4-cyano-2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II)

The metal-organic molecule bis(4-cyano-2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) (Cu(CNdpm)2) (C24H36N2O4Cu, Cu(II)) is a copper spin-1/2 system with a magnetic moment of 1.05 +/- 0.04 muB/molecule, slightly smaller than the 1.215+/-0.02 muB/molecule for the larger size copper spin-1/2 system C36H48N4O4Cu.C4H8O (bis(4-cyano-2,2,6,6-tetramethyl-3,5-heptanedionato)copper(II) 4,4'-bipyridylethene-THF). There is generally good agreement between photoemission from vapor-deposited thin films of the C24H36N2O4Cu on Cu(111) and Co(111) and model calculations. Although this molecule is expected to have a gap between the highest occupied molecular orbital and the lowest unoccupied molecular orbital, the molecule remains surprisingly well screened in the photoemission final state.     

Useful and accessible organometallic precursors for preparation of zinc sulfide and indium sulfide thin films via solution pyrolysis (printing) method

Polycrystalline β-zinc sulfide thin films were prepared by solution pyrolysis of an ethylzinc isopropylthiolate–zinc bis(dibutyldithiocarbamate) combined precursor (EtZnSiPr–Zn(S₂CNnBu₂)₂) in chloroform solution on glass or silicon(111) substrates at 300°C. Homogeneous but amorphous indium sulfide thin films were obtained from butylindium bis(isopropylthiolate) (nBuInSiPr₂) in P-xylene on these substrates at 300°C similarly. The sulfide thin films obtained were characterized by means of X-ray photoelectron spectroscopy (XPS), X-ray fluorescence Microanalysis, scanning electron microscopy (SEM) and optical band gap measurements.     

Polypyrrole electrodeposition on inorganic semiconductors CuInSe2 and CuInS2 for photovoltaic applications

Thin polypyrrole (PPy) layers with an average thickness of about 0.5 μm were deposited, using potentiostatic and galvanostatic techniques, on CuInSe₂ (CISe) structures prepared electrochemically on glass/ITO substrates and on CuInS₂ (CIS) structures fabricated on Cu tape substrates. The polymer layer of p-type is considered as an alternative to the traditional buffer layer and window layer in the conventional cell structure. The deposition proceeded from an aqueous solution containing sodium naphthalene-2-sulfonate as a dopant. In order to prepare stable PPy films of high quality with a good adherence to the surface of inorganic semiconductors CIS and CISe, the optimal concentrations of reagents, current densities and electrodepositing potentials were selected experimentally. Electrochemical polymerization of pyrrole to PPy on CIS surfaces is faster under white light irradiation and the polymerisation starts at lower potential than in the dark. Significant photovoltage and photocurrent of the fabricated CISe/PPy and CIS/PPy structures have been observed under standard white light illumination.     

CuInSe2 thin-film deposition on flexible plastic substrate: electrolyte recirculation rate and deposition potential effects

Copper indium diselenide (CuInSe₂; CIS) layer was electrolytically plated from an aqueous medium at room temperature onto electroless nickel deposited on flexible plastic (Kapton). The CIS depositions were carried out under constant deposition potentials (−0.5 to −1.1 V vs. Ag/AgCl) and at various electrolyte flow rates (0.3 to 1.5 ml/s) under constant applied current. The resulting thin films were characterized using atomic force microscopy, energy-dispersive X-ray spectroscopy, environmental scanning electron microscopy, and X-ray diffraction. The surface morphology and the atomic composition of the deposited CIS film were found to be influenced by the deposition potential under potential control and the electrolyte recirculation rate under current control. Low electrolyte flow rates under constant current control and high cathodic deposition potential under voltage control favor the deposition of indium. CIS films of uniform deposit, smoother surfaces, and with better adhesion properties are favored by moderate electrolyte recirculation rate. At a current density of 0.6 mA/cm², the electrolyte recirculation rate required to achieve ideal CIS atomic composition was found to be 1.0 ml/s in such a setting. The crystallinity of the film improved after annealing for 2 h at 390 °C under argon atmosphere.     

Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells

We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuIn _x Ga_1?x S₂ (CIGS) thin-film solar cells. ITO nanorod films ~700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS–ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.     

Synthesis, spectral, and thermal characterizations of Ni(II) and Cu(II) beta-diketone complexes with thenoyltrifluoroacetone ligand

Two kinds of nickel(II) and copper(II) beta-diketone complexes derived from thenoyltrifluoroacetone ligand with blue-violet light absorption were synthesized by reacting free ligand and different metal(II) ions in sodium methoxide solution. Their structures were postulated based on elemental analysis, ESI-MS, FT-IR spectra and UV-vis electronic absorption spectra. Smooth films on K9 glass substrates were prepared using the spin-coating method. Their solubility in organic solvents, absorption properties of thin film and thermal stability of these complexes were evaluated.     

Copper(II) carboxylate promoted intramolecular diamination of terminal alkenes: improved reaction conditions and expanded substrate scope

The copper(II) carboxylate promoted diamination reaction has been improved by the use of the organic soluble copper(II) neodecanoate [Cu(ND)2]. Cu(ND)2 allowed the less-polar solvent dichloroethane (DCE) to be used, and as a consequence, decomposition of less-reactive substrates could be avoided. High diastereoselectivity was observed in the synthesis of 2,5-disubstituted pyrrolidines. Ureas, bis(anilines), and alpha-amido pyrroles derived from 2-allylaniline could also participate in the diamination reaction.     

Electrochromic multilayer films of tunable color by combination of copper or iron complex and monolacunary dawson-type polyoxometalate

Electrochromic multilayer films consisting of polyoxometalate (POM) cluster alpha-K(10)[P(2)W(17)O(61)].17H(2)O (P(2)W(17)), copper(II) complex [Cu(II)(phen)(2)](NO(3))(2) (phen = 1,10-phenithroline), and iron complex [Fe(II)(phen)(3)](ClO(4))(2) were fabricated on silicon, quartz and ITO substrates by layer-by-layer self-assembly method. The multilayer films, PSS/Cu(II)(phen)(2)/[(P(2)W(17)/Cu(II)(phen)(2))](n) and PSS/Fe(II)(phen)(3)/[(P(2)W(17)/Fe(II) (phen)(3))](n) were characterized by UV-vis spectra, X-ray photoelectron spectra, cyclic voltammetry (CV), chronoamperometric (CA) and in-situ spectral electrochemical measurements. The interesting feature of the electrochromic film is its adjustable color by reduction of both transition metal complex and polyoxometalate at different potentials. The multilayer films also exhibit high optical contrast, suitable response time and low operation potential due to the presence of mono-lacunary-substituted polyoxometalate and transition metal complex. This is the first example that the color of electrochromic film can be adjustable, which gives valuable information for exploring new electrochromic materials with tunable colors.     

Poly(vinylpyrrolidone)‐based films grown on copper surfaces

The influence of molecular weight and the amount of the poly(vinylpyrrolidone) (PVP) on the growth of poly(vinylpyrrolidone)–based films on copper surfaces was studied by electrochemical, infrared and electronic spectroscopy, and thermogravimetric methods. Complex polymer/metal ions were deposited onto a copper surface, as the result of the electrochemically generated reaction of copper cations with PVP and SCN^?, in sulfuric acid media. Spontaneous film growth on copper surfaces was generated and characterized as a Cu(II)/PVP/SCN^? complex. Infrared spectra and thermal gravimetric curves of the films generated at + 0.7 V were compared with the chemically synthesized complex, and show the same patterns. The oxidation process can be described as: Cu(0)→Cu(I) and Cu(I)→Cu(II), and the copper complex formed at more positive potentials was characterized as Cu(II)/PVP/SCN^?, with copper bonded to the oxygen atom of PVP and thiocyanate ligand N‐linked. This study focuses on the complex formation on a copper surface in acid media and its characterization through electrochemical and spontaneously generated reactions. © 2009 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys 47: 2206–2214, 2009     

Voltammetry of copper species in estuarine waters induced adsorption of copper on the hanging mercury drop electrode in complexing ligand/surfactant/chloride media

The adsorption of copper species on a positively charged hanging mercury drop electrode in complexing ligand/surfactant/chloride solution is discussed. Techniques used were differential pulse voltammetry of the copper in the adsorbed film, and potential-step reduction of adsorbed copper followed by different pulse anodic stripping voltammetry of Cu(Hg). The CuCl^?₂ species is shown to be the most important copper moiety adsorbed on the electrode and the adsorption is enhanced by organic films. This can be a critical pathway in the reduction of copper(II) in estuarine waters. The induced adsorption of copper in organic layers has biogeochemical implications associated with the nature of organic films and their influence on the Cu(II)/Cu(I) redox couple. There are also analytical applications, e.g., the compositional assay of organic monolayers by utilising Cu(II) and Cu(I) adsorption as electoractive probes and the determination of solution copper-organic binding.