Modulation of hemocompatibility of polysulfone by polyelectrolyte multilayer films

Polyelectrolyte multilayer (PEM) films have been recently applied to surface modification of biomaterials. Cellular interactions with PEM films consisted of weak polyelectrolytes are greatly affected by the conditions of polyelectrolyte deposition, such as pH of polyelectrolyte solution. Previous studies indicated that the adhesion of several types of mammalian cells to PAH/PAA multilayer films was hindered by low pH and high layer numbers. The objective of this study is to evaluate whether the hemocompatibility of polysulfone can be modulated by deposition of poly(allylamine hydrochloride) (PAH)/poly(acrylic acid) (PAA) multilayer films. PAH/PAA multilayer films with different layer numbers were assembled onto polysulfone at either pH 2.0 or pH 6.5. The number of platelet adhesion and the morphology of adherent platelets were determined to evaluate hemocompatibility of modified substrates. Compared to non-treat polysulfone, the PEM films developed at pH 2.0 decreased platelet adhesion, while those built at pH 6.5 enhanced platelet deposition. Platelet adhesion was found positively correlated to polyclonal antibodies binding to surface-bound fibrinogen. The extent of platelet spreading was increased with layer numbers of PEM films, suggesting that the adherent platelets on thick PEM films were prone to activation. In conclusion, PAH/PAA films with few layers developed at pH 2.0 possessed better hemocompatibility compared to other substrates.     

Modulation of the functions of osteoblast-like cells on poly(allylamine hydrochloride) and poly(acrylic acid) multilayer films

Deposition of layer-by-layer polyelectrolyte multilayer (PEM) films has been a widely applied surface modification technique to improve the biocompatibility of biomaterials. The objective of this study was to investigate the impact of the deposition of poly(allylamine hydrochloride) (PAH) and poly(acrylic acid) (PAA) multilayer films on adhesion, growth and differentiation of osteoblasts-like MG63 cells. PAH and PAA were deposited sequentially onto tissue culture polystyrene at either pH 2.0 or pH 6.5 with 4-21 layers. While the MG63 cells attached poorly on the PAH/PAA multilayer films deposited at pH 2.0, while the cells adhered to the PEM films deposited at pH 6.5, depending on layer numbers. Cell adhesion, proliferation and osteogenic activities (alkaline phosphatase activity, expression of osteogenic marker genes and mineralization) were highest on the 4-layer PAH/PAA film and decreased with increasing layer numbers. On the other hand, the behavior of MG63 cells did not show any difference on the adjacent even and odd layers, except PEM4 and PEM5, i.e. the surface charges of the PAH/PAA multilayer films with over ten layers seem indifferent to osteoblastic functions. The results in this study suggested that the mechanical properties of PEM films may play a critical role in modulating the behavior of osteoblasts, providing guidance for application of PEM films to osteopaedic implants.     

Photo-Induced Hydrophilicity of TiO<Subscript>2</Subscript> Films Deposited on Stainless Steel via Sol-Gel Technique

The photo-induced hydrophilicity of TiO₂ films deposited on stainless steel substrates and silicon wafers using two different sol-gel routes has been investigated. The results indicate that crystalline titanium oxide films with excellent hydrophilic properties can be obtained on silicon wafer with both routes. XPS and XRD data reveal that films deposited on stainless steel exhibit crystallization features similar to those of films deposited on silicon wafers, and only differ by their oxidation degree owing to a TiO₂ reduction process associated to a diffusion of iron ions during deposition of the acidic sol and/or high temperature post-treatment. Consequently, hydrophilic properties of films deposited on stainless steel are inhibited. The deposition of a SiO_x barrier layer at the film/substrate interface allows preventing such a detrimental substrate influence. A low temperature deposition route of the TiO₂ film associated to the presence of a barrier layer yields best results in preventing iron contamination of the films.     

Mechanically stable antireflection and antifogging coatings fabricated by the layer-by-layer deposition process and postcalcination

Complexes of poly(diallyldimethylammonium chloride) (PDDA) and sodium silicate (PDDA-silicate) are alternately deposited with poly(acrylic acid) (PAA) to fabricate PAA/PDDA-silicate multilayer films. The removal of the organic components in the PAA/PDDA-silicate mulilayer films through calcination produces highly porous silica coatings with excellent mechanical stability and good adhesion to substrates. Quartz substrates covered with such porous silica coatings exhibit both antireflection and antifogging properties because of the reduced refractive index and superhydrophilicity of the resultant films. A maximum transmittance of 99.86% in the visible spectral range is achieved for the calcinated PAA/PDDA-silicate films deposited on quartz substrates. The wavelengths of maximum transmittance could be well tailored by simply changing the deposition cycles of multilayer films. The usage of PDDA-silicate complexes allows for the introduction of high porosity to the resultant silica coatings, which favors the fabrication of antireflection and antifogging coatings with enhanced performance. Meanwhile, PDDA-silicate complexes enable rapid fabrication of thick porous silica coatings after calcination because of the large dimensions of the complexes in solution. The easy availability of the materials and simplicity of this method for film fabrication might make the mechanically stable multifunctional antireflection and antifogging coatings potentially useful in a variety of applications.     

Study of in-situ surface cleaning for Si and SiGe epitaxy on Si with a novel ion beam vapor/assisted deposition technique

Ion beam vapor deposition is a new technique to grow Si and SiGe layers on Si substrates at low temperatures. The in situ surface cleaning prior to the deposition is a crucial step in the epitaxial growth of Si and SiGe films and is achieved by Ar ion bombardment with substrates kept at ambient temperature. A high temperature annealing (800 °C) is needed to repair the damage caused by this bombardment. We studied the effects of ion beam energy and the substrate temperature during the in situ cleaning on the quality of the grown films. An ion beam energy of 150–200eV is found to be sufficient to clean the surface for epitaxial growth. While the films deposited on properly cleaned surfaces are epitaxially grown, the inadequately cleaned surface leads to the formation of polycrystalline layers especially at low substrate temperatures.     

Photolithographically patterned surface modification of poly(dimethylsiloxane) via UV-initiated graft polymerization of acrylates

Patterned surface modification of poly(dimethylsiloxane) (PDMS) is achieved by combining ultraviolet-initiated graft polymerization (UV-GP) and photolithography. Poly(acrylic acid) (PAA) and poly(methacrylic acid) (PMAA) patterns were grafted onto PDMS with micrometer-scale feature edge resolution. The morphology and chemical composition of the grafted layers were assessed by optical and atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS), and XPS imaging. AFM section analyses demonstrated the deposition of 33 +/- 1 and 62 +/- 8 nm thick patterned films of PAA and PMAA, respectively. Spatially resolved C 1s XPS provided images of carboxylic acid functionalities, verifying the patterned deposition of acrylate films on PDMS. These observations demonstrate the general usefulness of UV-GP and photolithography for micropatterning.     

Substrate temperature effects on film chemistry in plasma deposition of organics. III. Analysis by static secondary ion mass spectrometry

Static secondary ion mass spectrometry (SIMS) was used to examine the effect of reducing the substrate temperature during the radio frequency plasma deposition of organic films. Studies of two polymerizable plasma precursors (2-hydroxyethyl methacrylate and acrylic acid) and one nonpolymerizable precursor (acetone) deposited without substrate cooling and with liquid nitrogen cooling are presented. Acetone deposited with methanol/dry ice cooling was also investigated. Spectra of polymerizable precursors were analyzed by comparison to spectra for the corresponding conventionally-polymerized polymer films [i.e., poly(hydroxyethyl methacrylate) and poly(acrylic acid)]. Acetone spectra were interpreted by reference to SIMS analysis of plasma-deposited films prepared from isotopically-labelled acetone and to reference homopolymers. Comparison of the SIMS spectra of films deposited at different substrate temperatures indicates that a reduction in substrate temperature generally results in higher intensity of peaks characteristic of oxygenated ion structures. SIMS also suggests that the reduction of substrate temperature results in less polymer unsaturation and fewer structures which form by hydrogen redistribution during the deposition process. These results support the hypothesis that deposition at low substrate temperatures leads to an increase in the proportion of precursor incorporated into the film without substantial fragmentation. Corroborative results from high resolution x-ray photoelectron spectroscopy (XPS) and assays for precursor functional groups by chemical derivatization reactions in conjunction with XPS are also presented. © 1992 John Wiley & Sons, Inc.     

Formation of High-quality Advanced High-k Oxide Layers at Low Temperature by Excimer UV Lamp-assisted Photo-CVD and Sol-gel Processing

IntroductionOne of the most critical challenges for deepsubmicron silicon researches is the technologicallimit to the use of silicon dioxide as the gate dielec-tric. For sub- 0 .1μm CMOS technology roadmapspredict the need for a sub- 2 nm Si- oxide gate di-electric[1,2 ] . Off- state tunnelling effects for transis-tors with gate oxide thickness below 2 nm lead tohigh leakage current densities of1 _ 1 0 A/cm2 [3 ] ,which become a serious obstacle for transistors,particularly for the rapidly …     

Colloid surface engineering via deposition of multilayered thin films from polyelectrolyte blend solutions

Multilayer thin films were constructed on polystyrene colloidal particles by depositing alternating layers of poly(allylamine hydrochloride) (PAH) at pH 7.5 and varying composition blends of poly(acrylic acid) (PAA) and poly(styrenesulfonate) (PSS) at pH 3.5. Following the deposition of each layer, microelectrophoresis experiments showed alternating zeta-potentials, suggesting the formation of multilayered films on the particles. Scanning and transmission electron microscopy were used to examine the surface morphology of the colloidal particles, with homogeneous surface coatings apparent for films deposited from PAA/PSS blend solutions containing up to 90 wt % PAA. The colloidal stability of these particles is greater than those coated with individual PAH and PAA layers. In the case of the blend PAA/PSS = 25:75 wt %, up to 20 layers were assembled without compromising the colloidal stability of the dispersion. The results demonstrate that the deposition of layers from PE blend solutions containing a strong and weak PE can be used as a facile method for controlling the surface properties and hence the colloidal stability of core-shell particles, as well as the thickness and morphology of the coatings. Control of these parameters is important for subsequent processing and application of these particles in controlled delivery, photonics, catalytic, and separation applications.     

Preparation of thick silica films in the presence of poly(acrylic acid) by using electrophoretic sol-gel deposition

Thick silica films were fabricated by electrophoretic sol-gel deposition of silica particles on a stainless steel sheet. Using sols prepared by the sol-gel method with poly(acrylic acid) (PAA) films of ca. 25 m in thickness were prepared with no cracks. The films were shown to be agglomerates of monodispersed silica particles with PAA. The size of the silica particles decreased with an increase in the added amount of PAA. The deposited weight was considerably larger for the films with PAA than that of the films without PAA.     

AES and SIMS investigation of diffusion barriers for copper metallization in power-SAW devices

Barrier layers for Cu-metallization in surface acoustic wave (SAW) devices were investigated by AES and SIMS depth profiles. Two layered systems on LiNbO(3) substrate have been analyzed after annealing in air up to 400 degrees C. The investigated systems were (A) Ta(20 nm)/Cu(150 nm)/Ti(30 nm), deposited by electron beam evaporation, and (B) Ta(30)Si(18)N(52)(50 nm)/Cu(150 nm)/Ta(30)Si(18)N(52)(50 nm) deposited by magnetron sputtering. In system A the Ta layer shows oxidation in air for T>or=300 degrees C. Ti from the buffer layer diffuses into the Cu at about 100 degrees C, and segregates at the Ta/Cu interface for T>or=200 degrees C. Oxidation of the Ti layer starts at 300 degrees C. But no remarkable amounts of oxygen could be found in the Cu film. The depth profiles show that the TaSiN layer in system B operates as a more effective barrier for the Cu-SAW technology up to more than 300 degrees C.     

Thickness and temperature‐dependent study of Co/Si interface

Thin films of cobalt (10, 40, and 100 nm) are deposited on Si substrate by electron beam physical vapor deposition technique. After deposition, 4 pieces from each of the wafers of silicon substrate were cut and annealed at a temperature of 200°C, 300°C, and 400°C for 2 hours each, separately. X‐ray diffraction, atomic force microscopy, and transmission electron microscopy (TEM) are used to study the structural and morphological characteristics of the deposited films. To obtain TEM images, Co films are deposited on Cu grids; so far, no such types of TEM images of Co films are reported. Structural studies confirm nanocrystalline nature with hexagonal close packed structure of the deposited Co film at lower thickness, while at higher thickness, film structure transforms to amorphous with lower surface roughness value. The particle sizes in all the cases are in the range of 3 to 5 nm. Micro‐Raman spectroscopy is also used to study the phase formation and chemical composition as a function of thickness and temperature. The results confirm that the grown films are of good quality and free from any impurity. Studies show the silicide formation at the interface during deposition. The appearance of new band at 1550 cm⁻¹ as a result of annealing indicates the structural transformation from CoSi to CoSi₂, which further enhances at higher annealing temperatures.     

Polymer-Based Superhydrophobic Coating Fabricated from Polyelectrolyte Multilayers of Poly(allylamine hydrochloride) and Poly(acrylic acid)

Superhydrophobic films mainly based on poly(allylamine hydrochloride) (PAH) and poly(acrylic acid) (PAA) polyelectrolyte multilayer have been deposited onto cleaned glass substrate by a layer-by-layer dip coating method. 3 bilayers of the PAH and PAA was directly coated onto the substrate as an underlying layer for subsequent coating. Desired surface roughness on the polyelectrolyte bilayers was created by etching the bilayers in hydrochloric acid solution so as to create the open pore having suitable size at the surface. Then, nanoparticles such as SiO₂ and TiO₂ of various sizes were deposited onto the etched polyelectrolyte bilayers. Finally, the surfaces were further modified with semifluorinated silane followed by cross-linking at 180 °C for 2 h to obtain desirable surface morphological features. The effect of etching time and addition of nanoparticles on surface morphology was investigated using an atomic force microscope (AFM). Wetting ability of the prepared film was determined by measuring water droplet contact angle using a goniometer. Adhesion between the superhydrophobic films and the substrate was evaluated by using a standard tape test method (D3359). The adhesion was improved by reducing the organic content in the films.     

Ion scattering and X-ray photoelectron spectroscopy of copper overlayers vacuum deposited onto mercaptohexadecanoic acid self-assembled monolayers

Metal overlayers deposited in vacuum onto self-assembled monolayer (SAM) systems serve as models for more complex metalized polymers. Metals (M) deposited onto SAMs with different organic functional end groups exhibit a wide range of behavior, ranging from strong chemical interactions with the end group to complete penetration of the metal through the SAM. In this work, we have characterized the interactions of Cu with the ---COOH of mercaptohexadecanoic acid (MHA, HOOC(CH₂)₁₅SH) SAMs self assembled on gold films by using X-ray photoelectron spectroscopy (XPS) to examine the chemical interactions, and a combination of XPS and ion scattering spectroscopy (ISS) to deduce the growth mode and penetration rate of the deposited Cu. We found that submonolayer amounts of Cu react with HOOC, whereas the rest of the Cu remains metallic and penetrates beneath the SAM surface to the SAM  Au interface. Considerable amounts of Cu (5 nm or more) will penetrate beneath the SAM layer, which is ca. 2.5 nm thick, despite the submonolayer presence of Cu at the SAM surface. The penetration rate depends strongly on the Cu deposition rate. Depositing copper onto MHA at 220 K or less, or using faster Cu deposition rates, results in slower or even completely suppressed penetration of the Cu through the SAM layer, whereas exposure to X-rays greatly enhances the penetration rate of large amounts of Cu through the SAM layer. The reacted copper is, based on the XPS 2p and LMM peaks, in the +2 oxidation state, but cannot be identified with a simple, stoichiometric oxide such as Cu₂O, CuO, or Cu (OH)₂.     

2D Zeolite Coatings: Langmuir–Schaefer Deposition of 3 nm Thick MFI Zeolite Nanosheets

Stable suspensions of zeolite nanosheets (3 nm thick MFI layers) were prepared in ethanol following acid treatment, which partially removed the associated organic structure‐directing agent. Nanosheets from these suspensions could then be dispersed at the air–water interface and transferred to silicon wafers using Langmuir–Schaefer deposition. Using layer‐by‐layer deposition, control on coating thickness was demonstrated. In‐plane X‐ray diffraction (XRD) revealed that the deposited nanosheets contract upon calcination similar to bulk MFI crystals. Different methods for secondary growth resulted in preferentially oriented thin films of MFI, which had sub‐12‐nm thickness in certain cases. Upon calcination, there was no contraction detectable by in‐plane XRD, indicating well‐intergrown MFI films that are strongly attached to the substrate.     

XPS investigations of thin tantalum films on a silicon surface

Ultra thin tantalum-based diffusion barriers are of great interest in copper metallisation technology. Even the smallest amounts of copper that diffuse into the active silicon regions on a microprocessor will alter their semiconducting properties thus leading to failure of the device. In the present work Ta films were deposited on silicon by electron beam evaporation and magnetron sputtering. The background of this study is investigation of interface formation, which is expected to have substantial influence on the properties of thin Ta films. All experiments were carried out under UHV conditions. This was necessary because Ta is a very reactive metal and is readily oxidized even at low oxygen partial pressure. The Ta4f peak, as a sensitive indicator of the chemical state, was analysed and compared to that for standard samples. Silicide formation is assumed to occur at the Ta/Si interface.     

Atomically flat gold on elastomeric substrate

We present a procedure to fabricate extremely smooth Au films supported on thin elastomeric (PDMS) substrates. Minimum rms roughness and largest grain size are obtained using Si wafers, coated with native oxide and release layers, as templates for the growth of thermally evaporated Au films. The wafers are held at a temperature of 300 degrees C during deposition. The Au films, up to 200 nm thick, are then transferred onto poly(dimethylsiloxane) substrates which have been previously surface-functionalized with a (3-mercaptopropyl)trimethoxysilane adhesion layer. The resulting Au films have been found by AFM to be extremely smooth with rms-roughness 2.5-4 angstroms and to exhibit a crystalline morphology with flat grains >500 nm in size. Thinner films, down to 20 nm, are grown at lower temperature and are comparably smooth, but with a loss in crystalline morphology. We compare the results of this optimized procedure with other gold films grown on mica sheets as templates and to those produced using Ti-O-Si interfacial chemistry.     

Adhesion forces between hybrid colloidal particles and concanavalin A

Hybrid particles of poly(methyl methacrylate) and carboxymethylcellulose, PMMA/CMC, were attached to atomic force microscopy cantilevers and probed against concanavalin A (ConA) films formed either on Si wafers or on CMC substrate. Regardless of the substrate, the approach curves showed different inclinations, indicating that the probe first touches a soft surface and then a hard substrate. The distance corresponding to the soft layer was estimated as 20 +/- 10 nm and was attributed to the CMC layers attached to the hybrid particles surfaces. Probing PMMA/CMC particles against ConA adsorbed onto Si wafers yielded retract curves with a sawlike pattern. The average range of adhesion forces (maximum pull-off distance) and mean adhesion force were estimated as 100 +/- 40 nm and -11 +/- 7 nN, respectively, evidencing multiple adhesions between CMC sugar residues and ConA. However, upon probing against ConA adsorbed onto CMC substrates, the mean pull-off distance and mean adhesion force were reduced to 37 +/- 18 nm and -3 +/- 1 nN, respectively, indicating that the ConA molecules immobilized onto CMC films are less available to interact with the hybrid particle than the ConA molecules adsorbed onto Si wafers. Another set of experiments, where PMMA/CMC particle probed against ConA-covered Si wafers in the presence of mannose, showed that the addition of mannose led to a considerable decrease in the mean adhesion force from -11 +/- 7 to -3 +/- 1 nN. Two hypotheses have been considered to explain the effect caused by mannose addition. The first suggested the desorption of ConA from the substrate so that the hybrid particle would probe bare Si wafer (weak adhesion). The second proposed the adsorption of mannose onto the ConA layer so that mannose layer would probe against another mannose layer, leading to low adhesion forces. In situ ellipsometry and capillary electrophoresis have been applied to check the hypotheses.     

Investigation of solid surfaces modified by Langmuir-Blodgett monolayers using sum-frequency vibrational spectroscopy and X-ray photoelectron spectroscopy

Langmuir-Blodgett (LB) monomolecular layers of alkylhydroxamic acids and alkylphosphonic acids on copper and iron substrates have been studied by X-ray photoelectron spectroscopy (XPS) and sum-frequency vibrational spectroscopy. According to the XPS results, the structures of the hydroxamic acid and phosphonic acid Langmuir-Blodgett films are very similar: the thickness of the layer of the hydrocarbon tails is typically 1.9-2.1 nm, while the layer of headgroups is about 0.3-0.35 nm thick. The tilt angle of the carbon chains is estimated to be 20-30 degrees with respect to the sample surface normal, and the molecules are connected to the substrate via their headgroups. Analysis of the P 2p and N 1s lines indicates the presence of deprotonated headgroups. The substrate Cu 2p line includes a component which can be assigned to Cu(2+) ions in a thin Cu(OH)(2) layer. The deposition of LB layers led to significant decrease of the hydroxide-related signal, which indicates that binding of the headgroups to the surface is accompanied by the elimination of water molecules. The sum-frequency spectra also clearly indicate that well-ordered monolayers can be formed by the Langmuir-Blodgett technique. Since the non-resonant background from the metal substrates renders the analysis of the spectra more difficult, model system samples on glass were prepared. It was found that the alkyl chains of the adsorbed acids predominantly adopt the all-trans conformation and form an ordered structure. Upper limits for the mean tilt angle of the terminal methyl groups are approximately 10-20 degrees.     

Epitaxial growth of AlN films on single-crystalline Ta substrates

We have demonstrated the first epitaxial growth of AlN films on single-crystalline Ta substrates by the use of a low-temperature growth technique based on pulsed laser deposition (PLD). Although previous AlN films grown on Ta(100) and (111) substrates have exhibited quite poor crystallinity, an epitaxial AlN(0001) film with an in-plane epitaxial relationship of AlN[112¯0]//Ta[001] has been obtained on a Ta(110) substrate at a growth temperature of 450 °C. We found that the full-width at half-maximum values for the crystal orientation distribution in the tilt and twist directions of the AlN film were 0.37° and 0.41°, respectively. Grazing-incidence X-ray reflection (GIXR) and X-ray photoelectron spectroscopy (XPS) measurements have revealed that the AlN/Ta heterointerface is quite abrupt, and that its abruptness remains unchanged even after annealing at 1000 °C.