Measurement of the KLL Dielectronic Recombination Resonances in He-like to C-like Kr Ions

The KLL dielectronic recombination processes of highly charged He-like to C-like Kr ions have been studied experimentally. The measurement was performed on the newly developed Shanghai electron beam ion trap （Shanghai-EBIT） facility. Characteristic x-rays from both dielectronic recombination and radiative recombination are detected as the electron beam energy is scanned through the resonances. The KLL resonant strengths obtained are 5.41×10^-19, 4.33×10^-19, 3.59×10^-19, 2.05×10^-19 and 0.98×10^-19 cm^2 eV for He-like to C-like Kr ions, respectively.     

Dielectronic Recombination of Sn^10＋ Ions and Related Satellite Spectra

Based on the multi-configuration Dirac-Fock method, theoretical calculations are carried out for the dielectronic recombination （DR） rate coefficients and the collision excitation rate coefficients of Sn^10＋ ions. It is found that the total DR rate coefficient has its maximum value between 10eV and 100eV and is greater than either the radiative recombination or three-body recombination rate coefficients （the number of free electrons per unit is 10^21 cm^3） for the ease of Te 〉 1 eV. Therefore, DR can strongly influence the ionization balance of laser produced multi-charged tin ions. The related dieleetronie satellite cannot be ignored at low temperature Te 〈 5 eV.     

Effects of Helium and Oxygen Common Implantation in Silicon Wafer

Defect engineering for SiO2 precipitation is investigated using He-ion implantation as the first stage of separation by implanted oxygen （SIMOX）. Cavities axe created in Si by implantation with helium ions. After thermal annealing at different temperatures, the sample is implanted with 120 keV 8.0 ×1016 cm 2 0 ions. The Q ion energy is chosen such that the peak of the concentration distribution is centred at the cavity band. For comparison, another sample is implanted with O ions alone. Cross-sectionM transmission electron microscopy （XTEM）, Fourier transform infrared absorbance spectrometry （FTIR） and atomic force microscopy （AFM） measurements are used to investigate the samples. The results show that a narrow nano-cavity layer is found to be excellent nucleation sites that effectively assisted SiO2 formation and released crystal lattice strain associated with silicon oxidation.     

Kinetic Energy of Trapped Ions Cooled by Buffer Gas

The average kinetic energy of 40 Ca＋ ions is measured by the method of evaporating ions in an rf ion trap. The kinetic energy of the ion 40Ca＋ varies from 0.5eV to 0.2eV with changing buffer gas pressure from 10^-7 mbar to 10^-5 mbar. The Brownian motion model is also introduced to calculate the average kinetic energy of the trapped ions.     

Femtosecond Third-Order Optical Nonlinearity of Au：Bi203 Nanocomposite Films

Ultrafast third-order optical nonlinearities of the as-deposited and annealed Au：Bi2O3 nanocomposite films deposited by magnetron cosputtering are investigated by using femtosecond time-resolved optical Kerr effect （OKE） and pump probe techniques. The third-order optical nonlinear susceptibility is estimated to be 2.6Ф×10^- 10 esu and 1.8 × 10.9 esu at wavelength of 800nm, for the as-deposited and the annealed film, respectively. The OKE signal of the as-deposited film is nearly temporally symmetrical with a peak centred at zero delay time, which indicates the dominant contribution from intraband transition of conduction electrons. For the annealed film, the existence of a decay process in OKE signal implies the important contribution of hot electrons. These characteristics are in agreement with the hot electron dynamics observed in pump probe measurement.     

Upconversion Luminescence of Er3+ Ions in Transparent Germanate Glass Ceramics Containing CaF2 Nanocrystals

The visible upconversion and near-infrared luminescence of Er3＋ ions in germanate glass ceramics containing GaF2 nanocrystals are investigated. The nanocrystals are characterized by x-ray diffraction （XRD） and transmission electron microscopy, showing their mean sizes less than 20hm. High transmittance of the glass ceramics is displayed by absorption spectra. The upconversion luminescence intensity in the glass ceramics increases significantly with increasing temperature. Both the shifts of the XRD peaks and the Stark-split shown in the luminescence spectra indicate the entrance of the Er3＋ ions into the CaF2 nanocrystals, which is confirmed by a Judd-Ofelt analysis. Possible mechanisms of the upconversion luminescence are analyzed.     

Power Consideration for Pulsed Discharges in Potassium Seeded Argon

Minimization of energy consumed in plasma generation is critical for applications, in which a large volume of plasmas is needed. We suggest that a high electron density atmospheric pressure plasmas can be generated by pulsed discharges in potassium seeded argon at an elevated temperature with a very small power input. The ionization efficiency and power budget of pulsed discharges in such plasmas are analytically studied. The results show that ionization efficiency of argon, especially at small reduced electric field E/N （the ratio of the electric field to the gas number density）, is improved effectively in the presence of small amount of potassium additives. Power input of pulsed discharge to sustain a prescribed average level of ionization in potassium seeded argon is three orders of magnitude lower than that in pure argon. Further, unlike in pure argon, it is found that very short high-voltage pulses with very high repetition rates are unnecessary in potassium seeded argon. A pulse with lOOns of pulse duration, 5kHz of repetition rate, and 2Td （1 Td = 1 × 10^-21 Vm^2） of E/N is enough to sustain an electron density of 10^19 m^-3 in 1 arm 1500K Ar＋0.1% K mixture, with a very small power input of about 0.08 × 10^4 W/m^3.     

Relativistic Energies and Auger Widths of High-Lying Doubly-Excited States 1s^23lnl′ ^1De in Be-Like O^4＋ Ions

The saddle-point variational method and restricted variational method are used to calculate energies of doublyexcited singlet states 1s^23lnl′ （n =3-.） ^1 De in Be-like O^4＋ ions, including the mass polarization and relativistic corrections. The saddle-point complex-rotation method is used to compute the Auger widths and Auger transition rates. These results are compared with other theoretical and experimental data in the literature.     

Comment on `Electronic Properties of Red P-Type Tl2S5 Single Crystals'

Recently, Gamal et al. [Chin. Phys. Lett. 22 (2005) 1530] reported the results of electrical conductivity, Hall effect and thermoelectric measurements on p-type Tl₂S₅ single crystals. From the experimental data for the temperature dependence of differential thermoelectric power, Gamal et al. determined thevalues of 2.66×10^-41kg and 2.50×10^-41kg, respectively, for the effective masses of electrons and holes in p-type Tl₂S₅, which are about ten orders of magnitude smaller than the free electron mass (9.11×10^-31kg). We argue that the anomalously small values obtained for the effective mass of chargecarriers in Tl₂S₅ have no physical significance.     

Atomic Diffusion in Cu/Si （111） and Cu/SiO2/Si （111） Systems by Neutral Cluster Beam Deposition

The Cu films are deposited on two kinds of p-type Si （111） substrates by ionized duster beam （ICB） technique. The interface reaction and atomic diffusion of Cu/Si （111） and Cu/SiO2/Si （111） systems are studied at different annealing temperatures by x-ray diffraction （XRD） and Rutherford backscattering spectrometry （RBS）. Some significant results are obtained： For the Cu/Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs when annealed at 230℃. The diffusion coefficients of the samples annealed at 230℃ and 500℃ are 8.5 ×10^-15 cm^2.s^-1 and 3.0 ×10^-14 cm^2.s^-1, respectively. The formation of the copper-silicide phase is observed by XRD, and its intensity becomes stronger with the increase of annealing temperature. For the Cu/SiO2//Si （111） samples prepared by neutral dusters, the interdiffusion of Cu and Si atoms occurs and copper silicides are formed when annealed at 450℃. The diffusion coefficients of Cu in Si are calculated to be 6.0 ×10^-16 cm^2.s^-1 at 450℃, due to the fact that the existence of the SiO2 layer suppresses the interdiffusion of Cu and Si.     

Theoretical Study of Interesting Fine-Structure Splittings for 23P0, 1, 2 States along Helium Isoelectronic Sequence

Using the multi-configuration Dirac Fock method including the Breit interactions and QED corrections, we calculate the fine-structure energy levels of the 2^3 Po, 1,2 states along the helium isoelectronic sequence with atomic number up to Z = 36, where LS-coupling is appropriate. Our calculation results agree with the experimental results within about 1%. We elucidate the mechanism of the interesting fine-structure splittings for the 2^3Po,1,2 states along the helium isoelectronic sequence, i.e. the competitions between the spin-orbit interactions and the Breit interactions which represent the relativistic retardation effect of electromagnetic interactions.     

Electronic Curves Crossing in Methyl Iodide by Spin--Orbit Ab Initio Calculation

An ab initio investigation of electronic curve crossing in a methyl iodide molecule is carried out using spin-orbit multiconfigurational quasidegenerate perturbation theory. The one-dimensional rigid potential curves and optimized effective curves of low-lying states, including spin-orbit coupling and relativistic effects, are calculated. The spin-orbit electronic curve crossing between ^3Qo＋ and ^1Q1, and the shadow minimum in potential energy curve of ^3Qo＋ at large internuclear distance are found in both sets of the curves according to the present calcu- lations. The crossing position is in the range of Re-1 = 0.2370 3：0.0001 nm. Comparisons with other reports are presented.     

Eu3+离子掺杂钛酸盐纳米管的直接水热合成与发光性能

 采用纳米管制备和离子掺杂同步进行的直接水热合成方法，合成了纯钛酸盐纳米管（TNT）和Eu³⁺离子掺杂的纳米管（TNT-Eu）；并利用X射线衍射（XRD）、透射电子显微镜（TEM）、光致发光谱仪研究了纳米管的形貌特征、物相组成、热稳定性和发光性能。结果显示：这种方法简便易行、稳定性好、产率高。钛酸盐纳米管物相可近似表示为(H,Na)₂Ti₃O₇或(H,Na)₂(Ti,Eu)₃O₇。高温处理对钛酸盐纳米管的结构产生很大的影响，450 ℃下纳米管的层状结构被破坏，晶体结构转化为锐钛矿型的TiO₂。TNT-Eu样品的发光性能较强，出现的393.5 nm、593 nm、614 nm的谱带归属于⁵D₀-⁷F₁和⁵D₀-⁷F₂电子的跃迁。     

Room-Temperature Ferromagnetism in Zn1-xMnxO Thin Films Deposited by Pulsed Laser Deposition

Zn1-xMnxO （x = O.Olq3.1） thin films with a Curie temperature above 300K are deposited on Al2O3 （0001） substrates by pulsed laser deposition. X-ray diffraction （XRD）, ultraviolet （UV）-visible transmission and Raman spectroscopy are employed to characterize the microstructural properties of these films. Room temperature ferromagnetism is observed by superconducting quantum interference device （SQUID）. The results indicate that Mn doping introduces the incorporation of Mn^2＋ ions into the ZnO host matrix and the insertion of Mn^2＋ ions increases the lattice defects, which is correlated with the ferromagnetism of the obtained films. The doping concentration is also proven to be a crucial factor for obtaining highly ferromagnetic Zn1-xMnxO films.     

Irradiation Effect in C60 Films Induced By Low Energy Ions

Irradiation effecs, mainly including transformation from crystalline into amorphous state, of C₆₀, films induced by 120keV H, Ar and Fe ions irradiation were analysed by means of Raman scattering technique. The results indicate that amorphization process in the cases of Ar and Fe ions irradiation is dominated by nuclear collision, but in the case of H ion irradiation, the process is dominated by electronic energy transfer. The annealing effect of electronic energy loss which induced the intermediate graphitization process before amorphization in lower irradiation dose ranging from 2×10¹⁴ ions/cm² to 5×10¹⁶ ions/cm² was found in the case of H ion irradiation for the first bine.     

Structural Deformation of CO22+ in Intense Femtosecond Laser Fields

The angular distributions of CO^＋ from the dissociation of CO2^2＋ and CO2^＋ in intense femtosecond laser fields （45 fs, about 5 × 10^15 W/cm^2） are studied at a laser wavelength of 800nm based on the time-of-flight mass spectra of CO^＋ fragment ions. The experimental results show that structural deformation occurs in the charge state of CO2^2＋ and the CO^＋ maintains linear geometrical structure.     

凝聚炸药中超压爆轰的实验研究

 采用飞片碰撞技术，在TNT/RDX（40/60）炸药中获得了2.5倍于正常爆轰的最大超压值，得到了超压爆轰下爆轰产物物态方程p=Aρ^{k+A₁(p-p_J)}（p－爆压，单位GPa，ρ－密度，单位kg/m³，A=ρ_J/ρ^k_J，p_J=27.06 GPa，ρ_J=2.3×10³ kg/m³，k=2.77，A₁=2.7×10^-3 GPa^-1，下表J代表正常爆轰状态）。该方程还可以较好地描述超压爆轰产物的二次冲击状态。     

Losses and nonlinear steady-state particle distribution functions for fully ionized tokamak-plasmas in the collisional transport regimes

Fully ionized L-mode tokamak plasmas in the fully collisional (Pfirsch-Schlüter) and in the low-collisional (banana) nonlinear transport regimes are analyzed. We derive the expressions for particles and heat losses together with the steady-state particle distribution functions in the several collisional transport regimes. The validity of the nonlinear closure equations, previously derived, has been indirectly tested by checking that the obtained particle distribution functions are indeed solutions of the nonlinear, steady-state, Vlasov-Landau gyro-kinetic equations. A quite encouraging result is the fact that, for L-mode tokamak plasmas a dissymmetry appears between the ion and electron transport coefficients: the latter submits to a nonlinear correction, which makes the radial electron coefficients much larger than the former. In particular we show that when the L-mode JET plasma is out of the linear region, the Pfirsch-Schlüter electron transport coefficients are corrected by an amplification factor, which may reach values of order 10². Such a correction is absent for ions. On the contrary, in the banana regime, the ion transport coefficients are increased by a factor 2 and the nonlinear corrections for electrons are negligible. These results are in line with experiments.     

在激光等离子体中产生高电荷态离子的新途径

本文提出一种在激光等离子体中产生高丰度高电荷态离子的新途径，即通过共振光激发和碰撞电离混合过程来实现，模型计算表明，这一混合过程对提高高电荷态离子丰度的有效性，有关实验也证明这一过程的重要作用。     

A Theoretical Study of Photoabsorption Cross Sections of Na^＋ 2

In the framework of quantum defect theory, we calculate photoabsorption cross sections of Na^＋ 2. Based on our calculations, there is an absorption window in the photoabsorption cross sections of Na^＋ 2. and more than one bump above the absorption window. The calculated photoabsorption cross sections provide an explanation for the abnormal bump in the experimental measurements of Hudson, which is a long-standing experimental puzzle.