Distance dependence of noncontact-AFM image contrast on Si(111) × –Ag structure

Atomic resolution imaging of the Si(111) × R30°–Ag surface was investigated using a noncontact atomic force microscopy (NC-AFM) in ultrahigh vacuum. NC-AFM images showed three types of contrasts depending on the distance between an AFM tip and a sample surface. When the tip–sample distance was about 1–3 Å, the images showed the honeycomb arrangement with weak contrast. When the tip–sample distance was about 0–0.5 Å, the images showed the periodic structure composed of three bright spots with relatively strong contrast. On the other hand, the contrasts of images measured at the distance of 0.5–1 Å seemed to be composed of the above-mentioned two types of contrasts. By comparing the site of bright spots in the AFM images with honeycomb-chained trimer (HCT) model, we suggested the following models: when the tip is far from the sample surface, tip–sample interaction force contributing to imaging is dominated by physical bonding interaction such as Coulomb force and/or van der Waals (vdW) force between the tip apex Si atoms and Ag trimer on the sample surface. On the other hand, just before the contact, tip–sample interaction force contributing to imaging is dominated by chemical bonding such as the force due to hybridization between the dangling bond out of the tip apex Si atom and the orbit of Si–Ag covalent bond on the sample surface.     

Chemical interactions in noncontact AFM on semiconductor surfaces: Si(111), Si(100) and GaAs(110)

Total-energy pseudopotential calculations are used to study the imaging process in noncontact atomic force microscopy (AFM) on Si(111), Si(100) and GaAs(110) surfaces. The chemical bonding interaction between a localised dangling bond on the atom at the apex of the tip and the dangling bonds on the adatoms in the surface is shown to dominate the forces and the force gradients and, hence, to provide atomic resolution. The lateral resolution capabilities are tested in both the Si(100) and the GaAs(110) surfaces. In the first case, the two atoms in a dimer can be resolved due to the dimer flip induced by the interaction with the tip during the scan, while in the GaAs(110), we identify the anion sublattice as the one observed in the experimental images.     

Carrier density distribution in silicon nanowires investigated by scanning thermal microscopy and Kelvin probe force microscopy

The use of scanning thermal microscopy (SThM) and Kelvin probe force microscopy (KPFM) to investigate silicon nanowires (SiNWs) is presented. SThM allows imaging of temperature distribution at the nanoscale, while KPFM images the potential distribution with AFM-related ultra-high spatial resolution. Both techniques are therefore suitable for imaging the resistance distribution. We show results of experimental examination of dual channel n-type SiNWs with channel width of 100 nm, while the channel was open and current was flowing through the SiNW. To investigate the carrier distribution in the SiNWs we performed SThM and KPFM scans. The SThM results showed non-symmetrical temperature distribution along the SiNWs with temperature maximum shifted towards the contact of higher potential. These results corresponded to those expressed by the distribution of potential gradient along the SiNWs, obtained using the KPFM method. Consequently, non-uniform distribution of resistance was shown, being a result of non-uniform carrier density distribution in the structure and showing the pinch-off effect. Last but not least, the results were also compared with results of finite-element method modeling.     

Noncontact AFM imaging on a Si(111)2×1-Sb surface with occupied lone-pair orbitals

Force interaction between an orbital of a dangling bond out of a Si tip apex and an occupied lone-pair orbital on a Si(111)2ǵ-Sb surface is experimentally investigated to clarify the imaging mechanism of noncontact AFM. Sb adatoms with occupied lone-pair orbitals are clearly observed on the 2ǵ zigzag chain structure surface. The discontinuity in the frequency-shift curve is not observed at the Sb sites. Possible contrast mechanisms are discussed and the most understandable in terms of the chemical bonding interaction weaken by the existence of the anti-bonding orbital with one electron.     

Forces and currents in carbon nanostructures: are we imaging atoms?

First-principles calculations show that the rich variety of image patterns found in carbon nanostructures with the atomic force and scanning tunneling microscopes can be rationalized in terms of the chemical reactivity of the tip and the distance range explored in the experiments. For weakly reactive tips, the Pauli repulsion dominates the atomic contrast and force maxima are expected on low electronic density positions as the hollow site. With reactive tips, the interaction is strong enough to change locally the hybridization of the carbon atoms, making it possible to observe atomic resolution in both the attractive and the repulsive regime although with inverted contrast. Regarding STM images, we show that in the near-contact regime, due to current saturation, bright spots correspond to hollow positions instead of atomic sites, providing an explanation for the most common hexagonal pattern found in the experiments.     

High resolution atomic force microscopic imaging of the Si(111)-(7 x 7) surface: contribution of short-range force to the images

Observation of the rest-atom layer of the Si(111)-(7 x 7) surface is performed by atomic force microscopy. By detecting the force due to the single chemical covalent bond formed between the tip and the sample surface, individual atoms on the layer were clearly resolved. Unprecedented high spatial resolution was achieved by setting the detection force at a small value and by reducing background forces due to the long-range interactions with the small oscillation amplitude of the cantilever and sharp probe tip.     

Non-contact AFM images of a C60 molecule adsorbed on the Si(0 0 1) surface: An ab initio method

A theoretical non-contact atomic force microscope (nc-AFM) image is simulated for an individual C₆₀ molecule adsorbed on the clean Si(0 0 1) surface. The ability to identify the intramolecular features of the molecule though nc-AFM imaging would allow many of the different configurations the molecule may take when adsorbed, to be identified. This would be an important preliminary step in the manipulation of the molecule along the surface, as the initial configuration that the molecule is in will affect the periodicity of the tip trajectory during the manipulation event (see D.L. Keeling et al., Phys. Rev. Lett. 94 (2005) #146104). Presented in this paper are simulated images and force curves above important sites for key stable configurations of the C₆₀ molecule. It is shown that in principle it is possible to distinguish between the different configurations of the molecule using nc-AFM. An ab initio DFT method was used to accurately describe the chemical interaction between the adsorbate and the Si tip, which has a single dangling bond at its apex.     

Visualization of human plasma fibrinogen adsorbed on highly oriented pyrolytic graphite by scanning probe microscopy

Human plasma fibrinogen (HPF) was observed by atomic force microscopy (AFM) and Kelvin probe force microscopy (KPFM) conducted in non-contact mode. The HPF was adsorbed on a highly oriented pyrolytic graphite (HOPG) substrate as single molecules, as aggregated bundles, and as aggregated fibers. Topographic and phase images confirmed structural changes in the HPF after exposure to air, while topographic and KPFM images confirmed fibers with the width of a single HPF molecule. Additionally, KPFM confirmed the surface potential difference between the HPF and the HOPG, and periodical potential drop reflecting the E and D domains in the fiber.     

纳米颗粒材料表面形貌结构AFM表征中针尖干扰的修正与评价

原子力显微镜（ＡＦＭ）被广泛地用来进行纳米尺度和亚微米尺度结构材料的形貌表征,其优点是制样简单、无需进行导电处理,但会针尖与样品作用时,由于针尖自身的成像作用,导致得到的图像结果比实际结果要大,这就是针尖的放大效应,文章基于一种简单的数学模型,得到了对实测图像的修正结果,对于一般金字塔形针尖,ＡＦＭ的放大作用可导致粒子尺寸比真实尺寸大近２倍,实测图像的失真状况与针尖的形状因子、粒子的分散状态等因素     

Kelvin probe force microscopy and its application

Kelvin probe force microscopy (KPFM) is a tool that enables nanometer-scale imaging of the surface potential on a broad range of materials. KPFM measurements require an understanding of both the details of the instruments and the physics of the measurements to obtain optimal results. The first part of this review will introduce the principles of KPFM and compare KPFM to other surface work function and potential measurement tools, including the Kelvin probe (KP), photoemission spectroscopy (PES), and scanning electron microscopy (SEM) with an electron beam induced current (EBIC) measurement system. The concept of local contact potential difference (LCPD), important for understanding atomic resolution KPFM, is discussed. The second part of this review explores three applications of KPFM: metallic nanostructures, semiconductor materials, and electrical devices.     

A new method to invert top-gate organic field-effect transistors for Kelvin probe investigations

In this contribution, we present a technique which allows for the investigation of the local channel potentials of a poly(3-hexylthiophene) (P3HT)-based top-gate field-effect transistor. Usually it is impossible to measure the channel potentials of a top-gate transistor with a Kelvin probe force microscope (KPFM) due to the electrical shielding of the top-gate or the weak capacitive coupling of the tip through the thick substrate to the channel. However, by depositing the entire device on a water solvable polyvinyl alcohol layer, devices can be completely detached from the substrate, creating a free-standing functioning organic field-effect transistor (OFET). After detaching, it is possible to laminate the inverted device on another substrate. This method grants access to the usually hidden channel of the top-gate OFET, and therefore KPFM measurements can be performed.     

Surface potential images of polycrystalline organic semiconductors obtained by Kelvin probe force microscopy

P-type copper phthalocyanine (CuPc) and n-type hexadecafluorophthalocyanina-tocopper (F₁₆CuPc) polycrystalline films were investigated by Kelvin probe force microscopy (KPFM). Topographic and corresponding surface potential images are obtained simultaneously. Surface potential images are related with the local work function of crystalline facets and potential barriers at the grain boundaries (GBs) in organic semiconductors. Based on the spatial distribution of surface potential at GBs, donor- and acceptor-like trapping states in the grain boundaries (GBs) of p-CuPc and n-F₁₆CuPc films are confirmed respectively. In view of spatial energy spectrum in micro-scale provided by KPFM, it is going to be a powerful tool to characterize the local electronic properties of organic semiconductors.     

Interaction of silicon dangling bonds with insulating surfaces

We use first principles density functional theory calculations to study the interaction of a model dangling bond silicon tip with the surfaces of CaF2, Al2O3, TiO2, and MgO. In each case the strongest interaction is with the highest anions in the surface. We show that this is due to the onset of chemical bonding with the surface anions, which can be controlled by an electric field across the system. Combining our results and previous studies on semiconductor surfaces suggests that using dangling bond Si tips can provide immediate identification of surface species in atomically resolved noncontact atomic force microscopy and facilitate selective measurements of short-range interactions with surface sites.     

Determination of spherosiloxane cluster bonding to Si(100)-2 x 1 by scanning tunneling microscopy

Scanning tunneling microscopy is used to determine the bonding geometry of the spherosiloxane cluster, H(8)Si(8)O(12) , on Si(100)-2 x 1. The images obtained are consistent with monovertex bonding to the Si(100)-2 x 1 surface via activation of a single Si-H bond. Filled and empty state images show good agreement with calculations of the electron density distribution of the cluster as well as the Psi(2) highest occupied molecular orbital and lowest unoccupied molecular orbital surface plots of the cluster.     

Three-dimensional scanning force/tunneling spectroscopy at room temperature

We simultaneously measured the force and tunneling current in three-dimensional (3D) space on the Si(111)-(7 × 7) surface using scanning force/tunneling microscopy at room temperature. The observables, the frequency shift and the time-averaged tunneling current were converted to the physical quantities of interest, i.e. the interaction force and the instantaneous tunneling current. Using the same tip, the local density of states (LDOS) was mapped on the same surface area at constant height by measuring the time-averaged tunneling current as a function of the bias voltage at every lateral position. LDOS images at negative sample voltages indicate that the tip apex is covered with Si atoms, which is consistent with the Si-Si covalent bonding mechanism for AFM imaging. A measurement technique for 3D force/current mapping and LDOS imaging on the equivalent surface area using the same tip was thus demonstrated.     

Imaging and tracking an electrostatic charge micro-domain by Kelvin force microscopy as evidence of water adsorption on mica surface

Muscovite mica is a widely accepted substrate for scanning probe microscopy (SPM) investigations. However, mica has intrinsic properties that alter samples and obstruct their analysis due to free charges build-up, ionic exchange and water adsorption taking place at the surface. In addition to interfacial phenomena, there is a growing interest in electrostatic charges on insulators as they are crucial in diverse applications. Despite the high demand for studies of this nature, experimental set-ups capable of resolving charge build-up at the micro-scale are still scarce and technically limited. Here, we report the imaging of surface charge dissipation on freshly cleaved mica by Kelvin-probe Force Microscopy (KPFM). A local electrostatic charge micro-domain was generated by friction between an atomic force microscope (AFM) tip and mica, and its decay was tracked by two-dimensional mapping using KPFM. We found time-dependent charge dissipation, which is attributed to the adsorption of water molecules on mica surface.     

Simultaneous imaging of tunneling current and damping energy by noncontact-AFM in ultra-high vacuum

We have simultaneously observed the images of tunneling current and damping energy with the nc-AFM (noncontact atomic force microscopy) image of Si(111)7ǻ. When inverted contrast is observed in the constant frequency shift nc-AFM image, the current image is not inverted, and vice versa. On the other hand, the damping images show a contrast similar to that of the nc-AFM images; the damping decreases at a narrow separation between the tip and the sample. This possibly indicates that the damping decreases as the attractive interaction increases under a constant oscillation amplitude of the cantilever. To keep the oscillation amplitude constant under an attractive interaction between a tip and a sample, the total energy of the cantilever oscillation is reduced and the oscillation velocity of the cantilever decreases. An explanation is proposed that the change in energy dissipation occurs in the cantilever oscillation, depending on the oscillation velocity of the cantilever, and the value is estimated from a simple model.     

Scanning probe microscopy investigations of the electrical properties of chemical vapor deposited graphene grown on a 6H-SiC substrate

Sublimated graphene grown on SiC is an attractive material for scientific investigations. Nevertheless the self limiting process on the Si face and its sensitivity to the surface quality of the SiC substrates may be unfavourable for later microelectronic processes. On the other hand, chemical vapor deposited (CVD) graphene does not posses such disadvantages, so further experimental investigation is needed. In this paper CVD grown graphene on 6H-SiC (0 0 0 1) substrate was investigated using scanning probe microscopy (SPM). Electrical properties of graphene were characterized with the use of: scanning tunnelling microscopy, conductive atomic force microscopy (C-AFM) with locally performed C-AFM current–voltage measurements and Kelvin probe force microscopy (KPFM). Based on the contact potential difference data from the KPFM measurements, the work function of graphene was estimated. We observed conductance variations not only on structural edges, existing surface corrugations or accidental bilayers, but also on a flat graphene surface.     

Non-contact atomic force microscopy studies of (2 × 4) InP(0 0 1) surface

A sputter-cleaned indium-rich (2 × 4) InP(0 0 1) surface was investigated by non-contact scanning atomic force microscopy (NCAFM). Atomically-resolved images of the surface exhibit two different patterns. The patterns can be interpreted within the mixed dimer model of (2 × 4) reconstructed InP(0 0 1) surface. It is shown that due to contrast formation mechanism in NCAFM the features resolved are in close correspondence to scanning tunnelling microscopy (STM) data. Due to chemical interaction a P-terminated tip gives the image similar to an empty-state STM image, whereas an In-terminated tip gives the image resembling a filled-state STM one. Moreover, it is shown that due to dipole-dipole interaction, NCAFM can be sensitive to orientation of In-P dimers.     

基于第一性原理的含空位a-Fe和H原子相互作用研究

氢致裂纹是制约超高强度钢应用的关键问题,掌握扩散氢的分布行为有助于弄清氢致裂纹的形成机理.本文采用第一性原理方法计算了H原子占据α-Fe晶格间隙和空位时的情况,得到了晶体的稳定构型及能量,并据此分析了H原子在晶格间隙和空位中的溶解倾向;从Mulliken布居、电子密度分布、态密度分布等角度分析了H原子与α-Fe晶体间隙和空位之间的相互作用.结果表明:间隙H原子倾向占据α-Fe四面体间隙位,其1s轨道电子与Fe的4s轨道电子呈微弱共轭杂化;空位是强氢陷阱, H原子倾向占据空位内壁附近的等电荷面.在真空0 K条件下单空位最多稳定溶解3个H原子,且H原子之间未表现出自发形成H2的倾向;间隙和空位中的H原子溶入改变了Fe晶格内电子分布导致原子结合力弱化,并在局部区域形成反键.基于第一性原理能量计算结果开展热力学分析,分析结果表明大多数情况下间隙H原子都是H主要的固溶形式, H平衡溶解度计算结果与实际符合良好.