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对长度为45 cm的短放电管螺旋波放电等离子体进行了Langmuir探针、原子发射光谱以及集成电荷耦合检测器(ICCD)检测诊断,研究螺旋波等离子体的放电特性.Langmuir探针数据显示电子密度在射频功率增加过程中出现两次大幅增长,由此确认了放电模式的转换及螺旋波放电模式的出现.发射光谱测量结果与Langmuir探针测量的电子密度数据一致,发现Ar原子和Ar离子的谱线强度与放电模式变化有着密切相关性.而通过对不同放电模式的ICCD测量,获得射频功率吸收因放电模式转变而变化的方式,认为放电模式转换时电子行为和能量传递方式也发生着变化. 相似文献
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碲化铅/硫化锌红外多层滤光片的光谱漂移研究 总被引:2,自引:0,他引:2
采用碲化铅和硫化锌作为镀膜材料,研制了空间红外光学系统使用的红外多层带通滤光片。本文首次利用导纳轨迹图解技术,当在空间低温条件下使用时,对由碲化铅的折射率变化引起的光谱漂移机理进行了研究。根据多层膜各膜层间存在的光学厚度的补偿效应,建立了光谱漂移模型。并对设计的滤光片采用对分法计算了它在低温条件下波长的漂移量,计算结果与研制出的滤光片实测结果吻合很好。并成功地将研究结果应用于滤光片的设计,对原设计结果进行了准确的修正,使得最终研制的滤光片在低温下完全满足使用要求。 相似文献
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A Reflective Inorganic All-Thin-Film Flexible Electrochromic Device with a Seven-Layer Structure 下载免费PDF全文
A reflective electrochromic device is fabricated on a 10 cm×10 cm flexible PI/Al substrate using magnetron sputtering. The device has a complementary all-thin-film structure and consists of seven layers. Indium tin oxide(ITO) acts as a transparent electrode deposited on the top, meanwhile, an aluminum(Al) film is adopted as an inter-counter bottom electrode and provides high reflectance. Tungsten oxide(WO_3) is used as the main electrochromic layer and nickel oxide(NiO) acts as the complementary electrochromic layer. Lithium niobate(LiNbO_3) is applied as a Li~+ion conductor layer. Especially, in the seven-layer structure, two tantalum oxides(Ta_2O_5) are added as transition layers to prevent Li+escaping from LiNbO_3 when the potential is not applied on the device. When the device is in an electrochromic process, both Ta_2O_5 provide excellent conductivity for Li~+ions and act as the dielectric of electrons. The complementary device with structure Al/NiO/Ta_2O_5/LiNbO_3/Ta_2O_5/WO_3/ITO exhibits good optical properties, and the reflectance modulation reaches up to 55% measured by a spectrophotometer in the range of 400–1600 nm. The cyclic stability of the electrochromic device is investigated. The results indicate that the charge density involved in the electrochromic process decreases and the electrochromic response time increases with the cycle number because of the Li~+ insertion in WO_3. 相似文献
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In this letter, using mult-half-wave structure and some chosen films optimized method, the long-wave infrared (LWIR) narrow-band pass filter is investigated, meanwhile the opposite of the substrate coated with long-wavelength pass film. The transmittance of design spectrum is more than 80% at wavelength region of 8.05 8.35 μm, and the average transmittance is less than 0.5% at wavelength region of less than 7.95 and 8.45 14 pro. The filter is prepared by thermal evaporation method, and plasma-assisted deposition technology. The experiment result shows that the average transmittance is about 75% in the transmission wavelength range, and the average transmittance of cut-off band is about 0.3%. The results show that multi-half-wave structure and some chosen films optimized method for the preparation LWIR narrow-band pass filter are feasible. The film system is simplified and is convenient to prepare the film. 相似文献
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Characteristics and properties of metal aluminum thin film prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology 下载免费PDF全文
Metal aluminum (Al) thin films are prepared by 2450-MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for thin-film preparation and annealing of as-deposited films related to the surface square resistivity. The square resistivity of as-deposited Al film is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structure analysis we conclude that the square resistivity is determined by neither contaminant concentration nor surface morphology, but by both crystallinity and crystal size in this process. 相似文献
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Characteristics and properties of metal aluminum thin films prepared by electron cyclotron resonance plasma-assisted atomic layer deposition technology 下载免费PDF全文
Metal aluminum (Al) thin films are prepared by 2450 MHz electron cyclotron resonance plasma-assisted atomic layer deposition on glass and p-Si substrates using trimethylaluminum as the precursor and hydrogen as the reductive gas. We focus our attention on the plasma source for the thin-film preparation and annealing of the as-deposited films relative to the surface square resistivity. The square resistivity of as-deposited Al films is greatly reduced after annealing and almost reaches the value of bulk metal. Through chemical and structural analysis, we conclude that the square resistivity is determined by neither the contaminant concentration nor the surface morphology, but by both the crystallinity and crystal size in this process. 相似文献
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