Mechanism of Diffusion of Carbon and Silicon Monooxides in a Cubic Silicon Carbide Crystal

Physics of the Solid State - The main processes that occur during diffusion of gaseous carbon CO and silicon SiO monoxides through a layer of a single-crystal silicon carbide SiC of the cubic...     

Epitaxial Growth of Cadmium Selenide Films on Silicon with a Silicon Carbide Buffer Layer

An epitaxial cubic 350-nm-thick cadmium selenide has been grown on silicon for the first time by the method of evaporation and condensation in a quasi-closed volume. It is revealed that, in this method, the optimum substrate temperature is 590°C, the evaporator temperature is 660°C, and the growth time is 2 s. To avoid silicon etching by selenium with formation of amorphous SiSe₂, a high-quality ~100-nm-thick buffer silicon carbide layer has been synthesized on the silicon surface by substituting atoms. The powder diffraction pattern and the Raman spectrum unambiguously correspond to cubic cadmium selenide crystal. The ellipsometric, Raman, and electron diffraction analyses demonstrate high structural perfection of the cadmium selenide layer and the absence of a polycrystalline phase.     

Quantum Computation on a Silicon Chip

We propose a potential quantum-computer hardware-architecture model on a silicon chip in which the basic cell gate is the atom-photon controlled phase flip gate. This gate can be implemented through a single-photon pulses scattering by a toroidal microcavity trapping a neutral atom, and it does not require very strict strong-coupling regime and can work beyond the Lamb-Dicke limit with high fidelity and success probability under practical noise environments. Especially, good and bad losses of the toroidal cavity are discussed in detail. Finally, a possibly simple experiment based on current experimental technology is proposed to demonstrate our scheme.     

Scanning a Silicon Photomultiplier with a Laser Beam

Physics of Particles and Nuclei Letters - The Silicon Photomultiplier (SiPM) is a novel semiconducting photodetector which can detect single photons. It consists of many microcells (pixels)...     

Silicon photonics: from a microresonator perspective

Silicon photonics leverages the optical, electrical and material properties of silicon and the mature complementary metal‐oxide semiconductor (CMOS) nanofabrication technique to develop on‐chip photonic integration, which has been making significant impacts in various frontiers including next‐generation optical communications networks, on‐chip optical interconnects for high‐speed energy‐efficient computing and biosensing. Among many optical structures fabricated on silicon chips, microresonators due to their high‐Q resonances and small footprints play important roles in various devices including lasers, filters, modulators, switches, routers, delays, detectors and sensors. This paper reviews from a microresonator perspective some of the latest progress in the field, summarizes design considerations in various applications and points out key challenges and potentials.     

Silicon carbide as electrode material of a pseudospark switch

Through the last years, the pseudospark switch, a low-pressure gas discharge switch with hollow cathode geometry, became established as a promising element of pulsed power technology and a serious alternative to other high-power switches. The use of a novel electrode material silicon carbide yields performance improvements in two main areas. Quenching phenomena, a long-standing problem for several applications, are suppressed completely and the switch lifetime can be distinctly increased, approaching that of thyratrons for operation with high repetition rate. As a crow-bar switch, the lifetime is nearby unlimited due to cold electrode usage. Spatial and temporal resolved spectroscopy revealed new insight into the extraordinary discharge behavior of silicon carbide electrodes. The radial plasma expansion from the central bore hole to the outer electrode regions, forming vesicular shells of different ionization stages of Si and C, are described in detail. The remaining problem, a significant loss of deuterium gas during discharge, has been long-term tested and is assumed to be the outcome of absorption in the silicon carbide electrodes. An envisaged promising remedy is presented     

Formation of Ordered Silicon Structures on a Graphite Surface

Physics of the Solid State - The possibility of formation of ordered silicon structures, including silicene, on the graphite substrate surface has been studied. The effect of various conditions of...     

嵌埋在多孔硅中硅团簇的拉曼谱

嵌埋在多孔硅中硅团簇的拉曼谱程光煦＊＋刘峰奇＋洪建明＊廖良生＋王广厚＋（南京大学现代分析中心＊及固体微结构物理国家实验室＋南京２１００９３）娄莉华（中国药科大学南京２１０００９）ＲａｍａｎＳｐｅｃｔｒａｏｆＳｉｌｉｃｏｎＣｌｕｓｔｅｒＥｍｂｅｄｄｅｄ...     

Silicon nanowire photodetector enhanced by a bow-tie antenna

Properties of surface plasmon polaritons can be exploited for the miniaturisation of photonic circuits below the optical wavelength scale. Smaller and more sensitive photodetectors can be made by using sub-wavelength semiconductor elements such as germanium or silicon nanowires in combination with nanometer-scale antennas. The proposed nanowire photodetector enables on-chip optical sensing applications with increased sensitivity and reduced size.     

Silicon Purification by a New Type of Solar Furnace

We propose a new method to reveal a direct transformation from solar energy to solar electricity. Instead of using electricity in the process, we use concentrated solar rays with a crucibleless process to upgrade metallurgical silicon into solar-grade silicon feedstock.     

Relaxation of Mechanical Stress in Epitaxial Films of Cubic Silicon Carbide on Silicon Substrates with a Buffer Porous Layer

Technical Physics - The results of this study quantitatively and qualitatively illustrate the processes of mismatch stress relaxation upon epitaxy of cubic silicon carbide on silicon. The...     

Silicon oscillistor as a thermometer with frequency output

We present experimental results for a silicon thermometer (p⁺-p-n⁺ device placed between the poles of a permanent magnet) with a frequency output. Measurements were made for temperatures in the range 77–335 K. When the temperature increases from 77 K to 335 K the device sensitivity decreases from 40 kHz/K to 3.1 kHz/K for a pulsed operating voltage of 65 V. The device sensitivity can be controlled through the operating voltage. We analyze the basic properties of thermometer element using the theory of the bulk helical instability of the semiconductor plasma. We compare its performance parameters with those of previously known devices with frequency outputs.V. D. Kuznetsov Siberian Physico-technical Institute at Tomsk University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 48–53, February, 1995.     

硅纳米晶激光器初瑞端倪

在天文观测中人们发现 ,星际间的尘埃云发射红光 .有些天文学家认为 ,这些红光是宇宙尘埃中的硅发出的 .这一考虑是基于已观察到的光谱性质和宇宙中硅的丰度 .然而 ,早在 2 0世纪 60年代人们就认识到 ,大块硅基本上不能发光 .最近 ,来自意大利的科学家Ｐａｖｅｓｉ等完成了一项关于硅纳米晶发光的研究 .他们的结果连同近年来其他同行研究小组的研究积累改变了人们对硅发光性能的认识 :当硅晶粒的尺寸减小到纳米量级时 ,其发光性能会发生显著的改变 .星系红光或许就是由其中的硅纳米晶发出的 .Ｐａｖｅｓｉ等研究的基本目标是发展硅半导体激…     

硅片表面球形粒子散射研究

为求解硅片表面微小粒子在任意线偏振平面入射光照射下的散射光光强分布,选择了基于Mie散射的杨氏模型为依据,推导了该模型下散射光强空间分布的计算方法,并给出了0.54 μm球形粒子在垂直、倾斜入射下光强空间分布的模拟计算结果,以及入射平面第一象限内散射光强与国外已发表实验结果的比较.     

Enhancement of Mechanical Stability of Silicon Macrospecimens Containing Hierarchically-Structured Porous Silicon

Russian Physics Journal - The paper presents the research findings in the field of mechanical stability of single-crystal silicon macrospecimens containing hierarchically-structured porous silicon....     

Absorption Enhancement of Silicon Solar Cell in a Positive-Intrinsic-Negative Junction

Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PIN) structures on silicon wafer by a gas source molecule beam epitaxy system and the investigate the absorption coefficient through the photovoltaic processes in detail. It is found that the absorption coefficient is enhanced by one order and can be tuned greatly through the thickness of the intrinsic layer in the PIN structure, which is also demonstrated by the 730-nm-wavelength laser irradiation. These results cannot be explained by the traditional absorption theory.We speculate that there could be some uncovered mechanism in this system, which will inspire us to understand the absorption process further.     

Silicon nanocluster formation under electron-beam-induced modification of a silicate matrix

A cathodoluminescence band in the green spectral region is observed in silicate matrices when the excitation density exceeds a certain threshold value. This band is due to the formation of silicon nanoclusters 4–5 nm in size and becomes manifest at SiO₂/Si interfaces when impurities are introduced into the silicate matrix, as well as under electron-beam irradiation.