Analysis of sunlight loss for femtosecond laser microstructed silicon and its solar cell efficiency

Black silicon, which is obtained by irradiating the surface of a Si wafer with femtosecond laser pulses in the presence of a sulfur-bearing gas, holds great promise in the preparation of high-performance intermediate band silicon solar cells. Using a three-level model, the enhanced usefulness of sunlight of the microstructured silicon was firstly analyzed. A detailed study on the relationship between the light loss, the ionization energy of doped impurities in silicon and the impurity band width were given. Then the effect of the position of intermediate band within the forbidden gap of silicon on the theoretical conversion efficiency for the corresponding solar cell is discussed using the Detailed Balance Theory. Finally problems need to be resolved in making intermediate band solar cells based on femtosecond laser microstructured silicon are pointed out with great emphasis.     

飞秒激光诱导ZnO :Al薄膜周期结构及其光致发光特性

利用单束800 run飞秒激光在掺杂了Al的ZnO薄膜中制备了纳米周期条纹结构.研究了不同能流密度的飞秒激光在照射不同的时间后,表面纳米周期结构的变化规律及其形成机制.利用He-Ge激光器作为激发光源,研究了ZnO:Al薄膜的光致发光特性及其与纳米周期结构的关系.结果表明,近带隙发光增强的主要原因是800 nm飞秒激光...     

Nutations of magnetizations of sublattices and their role in the formation of Mössbauer spectra of antiferromagnetic nanoparticles

A law determining the dispersion shift of the anti-Stokes band of the supercontinuum of a light bullet in a filament of a femtosecond laser pulse in transparent dielectrics has been established. The dispersion equation theoretically obtained for the anti-Stokes shift has been confirmed by spectroscopic studies of the filamentation of the near and middle infrared ranges in fused silica and fluorides.     

Performance testing of log pile photonic crystal fast-fabricated by direct femtosecond laser writing

Great efforts has been made on fabricating photonic crystals （PCs） with photonic band gaps （PBGs） during the past decade. Three-dimensional （3D） log pile PC was fabricated fast by direct femtosecond laser writing in ORMOCER. Qualitative analysis of the errors of PC was investigated using the Image Pro Plus. Surface qualities such as bending, distortion, and surface roughness were shown, and the band gap in the infrared wavelength region was observed. Meanwhile, the theory was experimentally verified that the center of PBG diminishes as the crystal lattice period reduces. Therefore, it is possible to fabricate PCs whose band gap range is from the near-infrared to visible wave band.     

Dielectric function dynamics during femtosecond laser excitation of bulk ZnO

Using a broad band dual-angle pump-probe reflectometry technique, we obtained the ultrafast dielectric function dynamics of bulk ZnO under femtosecond laser excitation. We determined that multiphoton absorption of the 800-nm femtosecond laser excitation creates a large population of excited carriers with excess energy. Screening of the Coulomb interaction by the excited free carriers causes damping of the exciton resonance and renormalization of the band gap causing broadband (2.3–3.5 eV) changes in the dielectric function of ZnO. From the dielectric function, many transient material properties, such as the index of refraction of ZnO under excitation, can be determined to optimize ZnO-based devices.     

Supercontinuum generation in all-solid photonic crystal fiber with low index core

In this paper we report on the fabrication and characterization of an all-solid photonic band gap fiber with high contrast and low index core. The fiber cladding is composed of high index lead-silicate rods while borosilicate NC21 glass is used as a background glass. A 70 nm wide photonic band gap at 875 nm central wavelength is experimentally identified and compared with a numerical model. We also present a novel method for photonic band gap measurement using a femtosecond pulsed laser. The method is verified against standard one and discussed.     

Band gap collapse and ultrafast “cold” melting of silicon during femtosecond laser pulse

It is established experimentally that a high concentration of electron-hole plasma produced in silicon by femtosecond laser pulse induces a sequential “collapse” of the band gap in the [111] and [100] directions and leads to the formation of a “cold” metallic liquid phase during the pulse.     

Laser-induced changes on optical band gap of amorphous and crystallized thin films of Se75S25−xAGx

Optical band gap of amorphous, crystallized, laser induced amorphous and laser induced crystallized films of Se₇₅S_25−xAg_x (x=4, 6 and 8) glassy alloys was studied from absorption spectra. The amorphous and crystallized films were induced by pulse laser for 10 min. After laser irradiation on amorphous and crystalline films, optical band gap was measured. It has been found that the mechanism of the optical absorption follows the rule of indirect transition. The amorphous thin films show an increase in the optical band gap, while the crystallized (thermally annealed) thin films show a decrease in the optical band gap by inducing laser irradiation. Crystallization and amorphization of chalcogenide films were accompanied with the change in the optical band gap. The change in optical energy gap could be determined by identification of the transformed phase. These results are interpreted in terms of concentration of localized states due to shift in Fermi level.     

Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation

We microstructured silicon surfaces with femtosecond laser irradiation in the presence of SF₆. These surfaces display strong absorption of infrared radiation at energies below the band gap of crystalline silicon. We report the dependence of this below-band gap absorption on microstructuring conditions (laser fluence, number of laser pulses, and background pressure of SF₆) along with structural and chemical characterization of the material. Significant amounts of sulfur are incorporated into the silicon over a wide range of microstructuring conditions; the sulfur is embedded in a disordered nanocrystalline layer less than 1 m thick that covers the microstructures. The most likely mechanism for the below-band gap absorption is the formation of a band of sulfur impurity states overlapping the silicon band edge, reducing the band gap from 1.1 eV to approximately 0.4 eV. PACS 78.68.+m; 81.15.Fg; 81.40.Tv; 81.65.Cf; 85.60.Gz     

Femtosecond optical diagnostics of interlevel energy relaxation in the band gap of silver iodide nanocrystals

The kinetics of the relaxation processes in silver iodide nanocrystals synthesized in a nanoporous silicate glass matrix and excited by femtosecond laser pulses has been experimentally studied. A short-lived characteristic transmission band is found to be formed in the spectral range of exciton absorption of nanocrystals. The specific features of photoexcited-carrier relaxation, which are due to the energy redistribution of captured carriers over levels in the band gap of silver iodide nanocrystals, are considered. The energy transfer relaxation rates are estimated and possible mechanisms of the energy transfer are discussed.     

低强度飞秒激光激发下CdTe和CdTe/CdS核壳量子点的荧光上转换研究

利用400 nm和800 nm不同波长的低强度飞秒激光,对CdTe和CdTe/CdS核壳量子点溶胶进行激发,研究其稳态和时间分辨荧光性质.800 nm飞秒激光激发下,CdTe和CdTe/CdS核壳量子点产生上转换发光现象,上转换荧光峰与400 nm激发下的荧光峰相比蓝移最多达15 nm,而且蓝移值与荧光量子产率有关.变功率激发确认激发光功率与上转换荧光强度间满足二次方关系,时间分辨荧光的研究表明荧光动力学曲线服从双e指数衰减.提出表面态辅助的双光子吸收模型是低激发强度上转换发光的主要机理.CdTe和CdT 关键词： CdTe量子点 CdTe/CdS核壳量子点 时间分辨荧光 上转换荧光     

Upconversion luminescence of CdTe nanocrystals by use of near-infrared femtosecond laser excitation

We study the steady-state and time-resolved luminescent properties of CdTe nanocrystals by one- and two-photon excitation with a femtosecond laser. We observe that 1208 nm excitation causes a shift of the emission peak of about 20 nm to the infrared compared with 400 nm laser excitation. It is found that upconversion luminescence is composed of a photoinduced trapping and a band edge excitonic state and produces the observation of biexponential decay kinetics. We conclude that the redshift of the emission peak is caused by the relative change in luminescence intensity between excitonic and trapping states.     

飞秒光脉冲在光子晶体光纤中的非线性传输和超连续谱产生

采用分步傅里叶方法数值模拟了飞秒光脉冲在光子晶体光纤中非线性传输和超连续谱的产生. 计算和分析了高阶色散和非线性效应对超连续谱形状和带宽的影响. 结果表明在光子晶体光纤中产生了孤子自频移现象. 同时也发现脉冲内拉曼散射和自相位调制的联合作用导致了超连续谱中精细结构的出现. 另外，还发现高阶色散和初始光脉冲的峰值功率对超连续谱的带宽和平滑也有直接影响. 关键词： 光子晶体光纤 孤子自频移 超连续谱     

The effect of different drying methods on band gap energy and femtosecond LIDT of nano-porous anti-reflective silica thin films

In this work, nano-porous anti-reflective silica thin films are deposited on the quartz samples by dip-coating in silica sol–gel. After dip-coating, the samples are divided into three groups and each group is heated in an oven with a different drying method. The effect of the heating methods on the morphology and optical properties of the coated layers are studied by SEM imaging and measuring optical transmission of the samples. Then based on the transmission data and calculation of absorption coefficient of the layers, the band gap energy of the silica thin films is calculated. In addition, laser induced damage threshold (LIDT) of the samples are measured by using 35 fs, 100 mJ femtosecond laser pulses. It can be seen that there is a distinct correlation between band gap energy and LIDT of the samples which both of them have been affected by heating method of the coated samples.     

Ultrafast dynamics in ZnO thin films irradiated by femtosecond lasers

The damage morphologies, threshold fluences in ZnO films were studied with femtosecond laser pulses. Time-resolved reflectivity and transmissivity have been measured by the pump-probe technique at different pump fluences and wavelengths. The results indicate that two-phase transition is the dominant damage mechanism, which is similar to that in narrow band gap semiconductors. The estimated energy loss rate of conduction electrons is 1.5 eV/ps.     

Pulse-width influence on the laser-induced structuring of CaF2 (111)

We have investigated the morphology of CaF₂ (111) irradiated by 780 nm laser pulses of varying pulse width (200 fs-8 ns) with fluences above the damage threshold. Large differences can be observed which we relate to the mechanisms and dynamics of defect production in this wide band gap material. The best defined and most controllable ablation is obtained for laser pulse widths of a few picoseconds. For nanosecond and femtosecond pulses strong fracturing of the crystal is observed with damage outside the laser irradiated zone. This has a thermal origin for nanosecond pulses but a non-thermal origin for pulse widths below approximately 1 ps.     

Ultrafast band-gap shift induced by a strain pulse in semiconductor heterostructures

The conventional piezospectroscopic effect is extended to picosecond time scales by using ultrashort strain pulses injected into semiconductor heterostructures. The strain pulses with durations of approximately 10 ps are generated in a metal transducer film by intense femtosecond laser pulses. They propagate coherently in the GaAs/(Al,Ga)As heterostructure over a distance of 100 microm and shift the band gaps by several meV as detected optically for quantum well exciton resonances by pump-probe techniques and time-resolved photoluminescence.     

基于氧化镁晶体中级联四波混频过程的紫外飞秒光脉冲产生

紫外波段飞秒激光脉冲是研究超快化学和超快物理相关过程的重要工具,实现波长可调谐的宽带紫外飞秒光脉冲将有助于推动超快动力学及相关领域的研究.本文报道了以两束400 nm的飞秒光脉冲作为级联四波混频的抽运源,在氧化镁晶体中产生9阶频率上转换和5阶频率下转换边带信号的实验结果.边带波长范围从350 nm到450 nm连续可调谐,这些边带信号的发散角和波长与级联四波混频理论预测结果吻合.紫外边带相对于入射光的整体转化效率约为1.2%.同时,高阶边带的光谱形状呈现高斯型,其谱宽理论上支持傅里叶转换极限脉宽为20—50 fs.本文展示了一种高效产生波长可连续调谐的紫外飞秒光脉冲的便捷方法,为基于紫外超短脉冲的相关研究提供了有效工具.     

Study of the bandgap renormalization in Ga-doped ZnO films by means of optical absorption under high pressure and photoelectron spectroscopy

In this paper we investigate the band gap renormalization in heavily Ga-doped ZnO thin films deposited by pulsed laser deposition on C$C$-plane sapphire and mica substrates. Thin films were studied by ultraviolet photoelectron spectroscopy and also by optical measurements under high pressure. The Fermi-level shift, as obtained from ultraviolet photoelectron experiments, exhibits a relatively small and positive shift (about 0.3 eV) with respect to the valence band for increasing electron concentrations up to 10²¹ cm⁻³. The optical gap exhibits a much larger increase (0.6 eV) for the same concentration range. Absorption measurements under pressure show that the pressure coefficient of the optical gap is correlated to the electron concentration in films, decreasing with increasing electron concentration. As a consequence, the contributions of band filling and band renormalization to the optical gap shift can be separated on the basis of the different pressure behavior of the physical parameters involved in each effect.     

Use of ultrafast-laser-driven microexplosional for fabricating three-dimensional void-based diamond-lattice photonic crystals in a solid polymer material

Micro-sized void spheres are successfully generated in a solid polymer by use of a tightly focused femtosecond laser beam from a high-repetition-rate laser oscillator. Confocal reflection images show that the void spheres are longitudinal rotational symmetric ellipsoids with a ratio of long to short axes of approximately 1.5. Layers of void spheres are then stacked to create three-dimensional diamond-lattice photonic crystals. Three gaps are observed in the [100] direction with a suppression rate of the second gap of up to approximately 75% for a 32-layer structure. The observed first- and second-order gaps shift to longer and shorter wavelengths, respectively, as the angle of incidence increases.