Arbitrarily oriented crack near interface in piezoelectric bimaterials

Arbitrarily oriented crack near interface in piezoelectric bimaterials is considered. After deriving the fundamental solution for an edge dislocation near the interface, the present problem can be expressed as a system of singular integral equations by modeling the crack as continuously distributed edge dislocations. In the paper, the dislocations are described by a density function defined on the crack line. By solving the singular integral equations numerically, the dislocation density function is determined. Then, the stress intensity factors (SIFs) and the electric displacement intensity factor (EDIF) at the crack tips are evaluated. Subsequently, the influences of the interface on crack tip SIFs, EDIF, and the mechanical strain energy release rate (MSERR) are investigated. The J-integral analysis in piezoelectric bimaterals is also performed. It is found that the path-independent of J₁-integral and the path-dependent of J₂-integral found in no-piezoelectric bimaterials are still valid in piezoelectric bimaterials.     

On the crack-tip stress singularity of interfacial cracks in transversely isotropic piezoelectric bimaterials

In this paper, characteristics of the interface crack-tip stress and electric displacement fields in transversely isotropic piezoelectric bimaterials are studied. The authors have proven, within the framework of the generalized Stroh formalism for piezoelectric bimaterials, that there is no coexistence of the parameters (oscillating) and κ (non-oscillating) in the interface crack-tip generalized stress field for all transversely isotropic piezoelectric bimaterials. This leads to the classification of piezoelectric bimaterials into one group that exhibits the oscillating property in the interface crack-tip generalized stress field and the other that does not. Fifteen (15) pair-combinations of six (6) piezoelectric materials PZT-4, PZT-5H, PZT-6B, PZT-7A, P-7, and BaTiO₃, which are commonly used in practice, are numerically analyzed in this study, and the results backup the above theoretical conclusions. Moreover, the associated eigenvectors for such material systems (with either =0 or κ=0) are also obtained numerically, and the result show that there still exist four linear independent associate eigenvectors for each bimaterial.     

Charged dislocations in piezoelectric bimaterials

In some piezoelectric semiconductors and ceramic materials, dislocations can be electrically active and could be even highly charged. However, the impact of dislocation charges on the strain and electric fields in piezoelectric and layered structures has not been presently understood. Thus, in this paper, we develop, for the first time, a charged three-dimensional dislocation loop model in an anisotropic piezoelectric bimaterial space to study the physical and mechanical characteristics which are essential to the design of novel layered structures. We first develop the analytical model based on which a line-integral solution can be derived for the coupled elastic and electric fields induced by an arbitrarily shaped and charged three-dimensional dislocation loop. As numerical examples, we apply our solutions to the typical piezoelectric AlGaN/GaN bimaterial to analyze the fields induced by charged square and elliptic dislocation loops. Our numerical results show that, except for the induced elastic (mechanical) displacement, charges along the dislocation loop could substantially perturb other induced fields. In other words, charges on the dislocation loop could significantly affect the traditional dislocation-induced stress/strain, electric displacement, and polarization fields in piezoelectric bimaterials.     

Two-dimensional Green's functions in anisotropic multiferroic bimaterials with a viscous interface

We derive, by virtue of the unified Stroh formalism, the extremely concise and elegant solutions for two-dimensional and (quasi-static) time-dependent Green's functions in anisotropic magnetoelectroelastic multiferroic bimaterials with a viscous interface subjected to an extended line force and an extended line dislocation located in the upper half-plane. It is found for the first time that, in the multiferroic bimaterial Green's functions, there are 25 static image singularities and 50 moving image singularities in the form of the extended line force and extended line dislocation in the upper or lower half-plane. It is further observed that, as time evolves, the moving image singularities, which originate from the locations of the static image singularities, will move further away from the viscous interface with explicit time-dependent locations. Moreover, explicit expression of the time-dependent image force on the extended line dislocation due to its interaction with the viscous interface is derived, which is also valid for mathematically degenerate materials. Several special cases are discussed in detail for the image force expression to illustrate the influence of the viscous interface on the mobility of the extended line dislocation, and various interesting features are observed. These Green's functions can not only be directly applied to the study of dislocation mobility in the novel multiferroic bimaterials, they can also be utilized as kernel functions in a boundary integral formulation to investigate more complicated boundary value problems where multiferroic materials/composites are involved.     

Line-integral representations for extended displacements,stresses, and interaction energy of arbitrary dislocation loops in transversely isotropic magneto-electro-elastic bimaterials

In addition to the hexagonal crystals of class 6 mm, many piezoelectric materials （e.g., BaTiO3）, piezomagnetic materials （e.g., CoFe2O4）, and multiferroic com-posite materials （e.g., BaTiO3-CoFe2O4 composites） also exhibit symmetry of transverse isotropy after poling, with the isotropic plane perpendicular to the poling direction. In this paper, simple and elegant line-integral expressions are derived for extended displace-ments, extended stresses, self-energy, and interaction energy of arbitrarily shaped, three-dimensional （3D） dislocation loops with a constant extended Burgers vector in trans-versely isotropic magneto-electro-elastic （MEE） bimaterials （i.e., joined half-spaces）. The derived solutions can also be simply reduced to those expressions for piezoelectric, piezo-magnetic, or purely elastic materials. Several numerical examples are given to show both the multi-field coupling effect and the interface/surface effect in transversely isotropic MEE materials.     

Green’s function of bimaterials comprising all cases of material degeneracy

For bimaterials with planar interfaces subjected to a line force and dislocation, Green’s functions are determined for all types of anisotropic materials including the nondegenerate, degenerate and extra-degenerate cases. The changes in Green’s function caused by material degeneracy are twofold: (i) implicit changes, attributable to material effects only and characterized by high-order eigenvectors and their intrinsic coupling in the higher-order eigensolutions; (ii) explicit changes, influenced by boundary and interface conditions, that cause additional terms in Green’s function. Material degeneracy affects the angular variation of the singular stress field, which may have significant implication on the failure prediction of strongly anisotropic materials. For all material types, Green’s functions are obtained for bimaterials with a planar interface, and for multi-material wedges subjected to a line force and dislocation at the vertex. The results are expressed in a concise notation in terms of the complete set of eigenvectors and kernel matrices of analytic functions.     

界面裂纹问题中的权函数方法

本文将Ｐａｒｉｓ等确定均匀材料中裂纹尖端应力强度因子的权函数方法推广应用到界面裂纹问题，给出了界面裂纹尖端附近或无限大体半无限界面裂纹问题的权函数的显式表达式。利用此权函数表达式可以很简便地求解界面裂纹尖端附近一些外来作用引起的应力强度因子，比如任意分布力、相变应变、位错和热等。作为一个算例，本文计算了界面一侧一个刃型位错引起的应力强度因子。     

Thermoelectroelastic Green's function and its application for bimaterial of piezoelectric materials

Summary For a two-dimensional piezoelectric plate, the thermoelectroelastic Green's functions for bimaterials subjected to a temperature discontinuity are presented by way of Stroh formalism. The study shows that the thermoelectroelastic Green's functions for bimaterials are composed of a particular solution and a corrective solution. All the solutions have their singularities, located at the point applied by the dislocation, as well as some image singularities, located at both the lower and the upper half-plane. Using the proposed thermoelectroelastic Green's functions, the problem of a crack of arbitrary orientation near a bimaterial interface between dissimilar thermopiezoelectric material is analysed, and a system of singular integral equations for the unknown temperature discontinuity, defined on the crack faces, is obtained. The stress and electric displacement (SED) intensity factors and strain energy density factor can be, then, evaluated by a numerical solution at the singular integral equations. As a consequence, the direction of crack growth can be estimated by way of strain energy density theory. Numerical results for the fracture angle are obtained to illustrate the application of the proposed formulation. Received 10 November 1997; accepted for publication 3 February 1998     

Analysis of a permeable interface crack in elastic dielectric/piezoelectric bimaterials

A permeable interface crack between elastic dielectric material and piezoelectric material is studied based on the extended Stroh’s formalism. Motivated by strong engineering demands to design new composite materials, the authors perform numerical analysis of interface crack tip singularities and the crack tip energy release rates for 35 types of dissimilar bimaterials, respectively, which are constructed by five kinds of elastic dielectric materials: Epoxy, Polymer, Al₂O₃, SiC, and Si₃N₄ and seven kinds of practical piezoelectric ceramics: PZT-4, BaTiO₃, PZT-5H, PZT-6B, PZT-7A, P-7, and PZT-PIC 151, respectively. The elastic dielectric material with much smaller permittivity than commercial piezoelectric ceramics is treated as a special transversely isotropic piezoelectric material with extremely small piezoelectricity. The present investigation shows that the structure of the singular field near the permeable interface crack tip consists of three singularities: and , which is quite different from that in the impermeable interface crack. It can be concluded that different far field loading cases have significant influence on the near-tip fracture behaviors of the permeable interface crack. Based on the present theoretical treatment and numerical analysis, the electric field induced crack growth is well explained, which provides a better understanding of the failure mechanism induced from interface crack growth in elastic dielectric/piezoelectric bimaterials. The project supported by the National Natural Science Foundation of China (10572110), Doctor Foundation of the Chinese Education Ministry and Doctorate Foundation of Xi’an Jiaotong University. The English text was polished by Yunming Chen.     

Crack problems of piezoelectric materials

This paper presents an analysis of crack problems in homogeneous piezoelectrics or on the interfaces between two dissimilar piezoelectric materials based on the continuity of normal electric displacement and electric potential across the crack faces. The explicit analytic solutions are obtained for a single crack in piezoelectrics or on the interfaces of piezoelectric bimaterials. A class of boundary problems involving many cracks is also solved. For homogeneous materials it is found that the normal electric displacementD ₂ induced by the crack is constant along the crack faces which depends only on the applied remote stress field. Within the crack slit, the electric fields induced by the crack are also constant and not affected by the applied electric field. For the bimaterials with realH, the normal electric displacementD ₂ is constant along the crack faces and electric fieldE ₂ has the singularity ahead of the crack tip and a jump across the interface. The project is supported by the National Natural Science Foundation of China(No. 19704100) and the Natural Science Foundation of Chinese Academy of Sciences(No. KJ951-1-201).     

压电体中孔边Ⅲ型界面裂纹的动应力强度因子

采用Green函数法研究界面上含圆孔边界径向有限长度裂纹的两半无限压电材料对SH波的散射和裂纹尖端动应力强度因子问题.首先构造出具有半圆型凹陷半空间的位移Green函数和电场Green函数,然后采用裂纹"切割"方法构造孔边裂纹,并根据契合思想和界面上的连接条件建立起求解问题的定解积分方程.最后作为算例,给出了孔边界面裂纹尖端动应力强度因子的计算结果图并进行了讨论.     

A cracked sliding interface between anisotropic bimaterials

A general solution for the stresses and displacements of a cracked sliding interface between anisotropic bimaterials subjected to uniform tensile stress at infinity is given by using the Stroh’s formulation. Horizontal and vertical opening displacements on the interface, stress intensity factors, and energy release rate are expressed in real form, which are valid for any kind of anisotropic materials including the degenerate materials such as isotropic materials. It is observed that stresses exhibit the traditional inverse square root singularities near the crack tips, and the vertical opening displacement and energy release rate are intimately related to a real parameter λ determined by the elastic constants of the anisotropic bimaterials.     

Interfacial dislocation and its applications to interface cracks in anisotropic bimaterials

Interfacial dislocations and cracks in anisotropic bimaterials are considered. The displacement and the stress fields due to an interfacial dislocation are obtained in a real and simple form. Explicit solutions to the traction along the interface and the crack opening displacement for a Griffith interface crack are derived. Possible definitions of stress intensity factors are given which reduce to the classical definition for a crack in a homogeneous medium. It is found that a planar interface between dissimilar anisotropic solids is completely characterized by no more than 9 independent parameters. Some invariant properties of the dislocation and crack solutions under coordinate transformation are also discussed.     

Electroelastic interaction between piezoelectric screw dislocation and circularly layered inclusion with imperfect interfaces

The interaction between a piezoelectric screw dislocation and an interphase layer in piezoelectric solids is theoretically investigated.Here,the dislocation located at arbitrary points inside either the matrix or the inclusion and the interfaces of the interphase layer are imperfect.By the complex variable method,the explicit solutions to the complex potentials are given,and the electroelastic fields can be derived from them.The image force acting on the dislocation can be obtained by the generalized PeachKoehler formula.The motion of the piezoelectric screw dislocation and its equilibrium positions are discussed for variable parameters.The important results show that,if the inner interface of the interphase layer is imperfect and the magnitude of degree of the interface imperfection reaches the certain value,two equilibrium positions of the piezoelectric screw dislocation in the matrix near the interface are found for the certain material combination which has never been observed in the previous studies(without considering the interface imperfection).     

Piezoelectric screw dislocations interacting with a circular inclusion with imperfect interface

The electroelastic coupling interaction between multiple screw dislocations and a circular inclusion with an imperfect interface in a piezoelectric solid is investigated. The appointed screw dislocation may be located either outside or inside the inclusion and is subjected to a line charge and a line force at the core. The analytic solutions of electroelastic fields are obtained by means of the complex-variable method. With the aid of the generalized Peach–Koehler formula, the explicit expressions of image forces exerted on the piezoelectric screw dislocations are derived. The motion and the equilibrium position of the appointed screw dislocation near the circular interface are discussed for variable parameters (interface imperfection, material electroelastic mismatch, and dislocation position), and the influence of the nearby parallel screw dislocations is also considered. It is found that the piezoelectric screw dislocation is always attracted by the electromechanical imperfect interface. When the interface imperfection is strong, the impact of material electroelastic mismatch on the image force and the equilibrium position of the dislocation becomes weak. Additionally, the effect of the nearby dislocations on the mobility of the appointed dislocation is very important.     

Interaction energy of interface dislocation loops in piezoelectric bi-crystals

Interface dislocations may dramatically change the electric properties,such as polarization,of the piezoelectric crystals.In this paper,we study the linear interactions of two interface dislocation loops with arbitrary shape in generally anisotropic piezoelectric bi-crystals.A simple formula for calculating the interaction energy of the interface dislocation loops is derived and given by a double line integral along two closed dislocation curves.Particularly,interactions between two straight segments of the interface dislocations are solved analytically,which can be applied to approximate any curved loop so that an analytical solution can be also achieved.Numerical results show the influence of the bi-crystal interface as well as the material orientation on the interaction of interface dislocation loops.     

Electro-elastic interaction between a piezoelectric screw dislocation and circular interfacial rigid lines

The electro-elastic interaction between a piezoelectric screw dislocation located either outside or inside inhomogeneity and circular interfacial rigid lines under anti-plane mechanical and in-plane electrical loads in linear piezoelectric materials is dealt with in the framework of linear elastic theory. Using Riemann–Schwarz’s symmetry principle integrated with the analysis of singularity of complex functions, the general solution of this problem is presented in this paper. For a special example, the closed form solutions for electro-elastic fields in matrix and inhomogeneity regions are derived explicitly when interface containing single rigid line. Applying perturbation technique, perturbation stress and electric displacement fields are obtained. The image force acting on piezoelectric screw dislocation is calculated by using the generalized Peach–Koehler formula. As a result, numerical analysis and discussion show that soft inhomogeneity can repel screw dislocation in piezoelectric material due to their intrinsic electro-mechanical coupling behavior and the influence of interfacial rigid line upon the image force is profound. When the radian of circular rigid line reaches extensive magnitude, the presence of interfacial rigid line can change the interaction mechanism.     

Line-integral representations for the elastic displacements,stresses and interaction energy of arbitrary dislocation loops in transversely isotropic bimaterials

The elastic displacements, stresses and interaction energy of arbitrarily shaped dislocation loops with general Burgers vectors in transversely isotropic bimaterials (i.e. joined half-spaces) are expressed in terms of simple line integrals for the first time. These expressions are very similar to their isotropic full-space counterparts in the literature and can be easily incorporated into three-dimensional (3D) dislocation dynamics (DD) simulations for hexagonal crystals with interfaces/surfaces. All possible degenerate cases, e.g. isotropic bimaterials and isotropic half-space, are considered in detail. The singularities intrinsic to the classical continuum theory of dislocations are removed by spreading the Burgers vector anisotropically around every point on the dislocation line according to three particular spreading functions. This non-singular treatment guarantees the equivalence among different versions of the energy formulae and their consistency with the stress formula presented in this paper. Several numerical examples are provided as verification of the derived dislocation solutions, which further show significant influence of material anisotropy and bimaterial interface on the elastic fields and interaction energy of dislocation loops.     

ANALYSIS OF CRACK-TIP SINGULARITIES FOR AN INTERFACIAL PERMEABLE CRACK IN METAL/PIEZOELECTRIC BIMATERIALS

By modeling metal as a special piezoelectric material with extremely small piezoelec- tricity and extremely large permittivity,we have obtained the analytical solutions for an interfacial permeable crack in metal/piezoelectric bimaterials by means of the generalized Stroh formalism. The analysis shows that the stress fields near a permeable interfacial crack tip are usually with three types of singularities:r~(-1/2 iε)and r~(-1/2).Further numerical calculation on the oscillatory indexεare given for 28 types of metal/piezoelectric bimaterials combined by seven commercial piezoelectric materials: PZT-4,BaTiO_3,PZT-5H,PZT-6B,PZT-7A,P-7 and PZT-PIC 151 and four metals:copper,silver,lead and aluminum,respectively.The explicit expressions of the crack tip energy release rate(ERR)and the crack tip generalized stress intensity factors(GSIF)are obtained.It is found that both the ERR and GSIF are independent of the electric displacement loading,although they seriously depends on the mechanical loadings.     

基体裂纹与界面刚性线的弹性干涉

研究两种材料界面上的刚性线与其它任意位置处直线裂纹弹性干涉的反平面问题。基于界面上刚性线与任意位置处螺型位错干涉的基本解,运用连续位错密度模型法将问题转化为奇异积分方程。用半开型积分法求解奇异积分方程,得到位错密度函数的离散值,计算裂纹尖端处的应力强度因子。算例说明该方法可用于工程实际问题。