Study of the physical properties of amorphous Zr doped Al2O3 powders

Alumina (Al₂O₃) powders doped with different amounts of zirconium (Zr) ions were synthesized by the sol-gel process. The Zr concentration was changed from 0 to 3%. Here we attempted to fabricate Zr doped Al₂O₃ samples and characterized them for their optical and structural properties. Ultraviolet-Visible analysis (UV-Vis), infrared spectroscopy (FT-IR) and powder X-ray diffraction (XRD) have been used to characterize the optical properties, phase evolution and crystallinity of the obtained samples. X-ray diffraction patterns revealed that all the Al₂O₃ powders obtained were completely amorphous. An optical study was employed to determine the band gap of the samples. The transmittance had decreased from 90 to 86% and the band gap of pure Al₂O₃ was found to be 4.116 eV, and it was shifted to 4.038 eV for 3% Zr doped Al₂O₃. The results obtained in this study are discussed comparatively with those cited in the literature.     

Optical properties of Nb doped SrTiO3 from first principles study

The electronic and optical properties of Nb doped SrTiO₃ are studied by ab initio linear muffin-tin orbital method in the atomic sphere approximation. The equilibrium lattice constants of SrTi_1−xNb_xO₃ with x=0.0, 0.25 and 0.5 are found by minimization of the total energy curves. The computated lattice constants are in good agreement with experimental data. Our electronic band calculation shows that the Fermi level of SrTi_1−xNb_xO₃ with x≥0.125 moves into the conduction bands and the system shows metallic behavior. The numerical results indicate that the Nb impurity atoms would lead to the distortion of the band edges. The complex dielectric function of SrTiO₃ and Nb doped SrTiO₃ are calculated using the random-phase approximation. The doping effect on the optical properties of SrTi_1−xNb_xO₃ is discussed.     

过渡金属Fe或Ag掺杂K2Ti6O13的电子结构和光学性质

本文利用基于密度泛函理论（DFT）的第一性原理计算研究了它们的电子结构和光学性质.光学性质的计算结果和实验相一致.结果表明,Fe或Ag掺杂后,K₂Ti₆O₁₃的带隙中出现了杂质带且其带隙值变小,因而使掺杂后的K₂Ti₆O₁₃的吸收边发生红移并实现了其对可见光吸收.其中杂质带主要由Fe 3d态或Ag 4d态与Ti 3d态和O 2p态杂化而成.对于Fe掺杂的K₂Ti₆O₁₃,杂质带位于带隙中间,因此可以作为电子从价带跃迁到导带的桥梁.对于Ag掺杂的K₂Ti₆O₁₃,杂质带位于价带顶附近为受主能级,可以降低光生载流子的复合概率.实验和计算研究表明,通过Fe或Ag的掺杂可以实现了K₂Ti₆O₁₃对可见光的吸收,这对进一步研究K₂Ti₆O₁₃的光学性质具有重要意义.     

Effect of Fe3+-doped Ca12Al14O33 cement on optical and thermal properties

This study aims to investigate the effect Fe ions doped into Ca₁₂Al₁₄O₃₃ (C12A7, 12CaO-7Al₂O₃) cement compound on its thermal and optical properties. Polycrystalline samples of Ca₁₂Al_14?xFe_xO₃₃ (where x?=?0.0, 0.5, and 1.0) were prepared via a solid state reaction in an oxygen atmosphere. The lattice constant of Ca₁₂Al₁₄O₃₃ determined using an XRD technique was in excellent agreement with first-principles calculations. With increasing Fe concentrations, the lattice constants were found to have increased. Additionally, the optical gaps of Ca₁₂Al_14?xFe_xO₃₃, (x?=?0, 0.25, 0.5, and 1.0) were 3.9?eV, 3.77?eV, 3.75?eV and 3.63?eV, respectively. It was clearly seen that the optical gap decreased with increasing Fe concentrations. As revealing by first-principles calculations, the optical gap was directly related to the electronic transition from the occupied electronic state of extra-framework O^2? ions (as free O^2? ions inside nano-cage) to the conduction band. Moreover, we also found that the thermal conductivity Ca₁₂Al_14?xFe_xO₃₃ was reduced when the larger atomic mass and atomic radii Fe was substituted into Al sites. Hence, this indicated that Fe³⁺-substitution into Al³⁺ sites of Ca₁₂Al₁₄O₃₃ cement directly affected both its optical gap and thermal conductivity.     

A route to transparent bulk metals

Hypothetical compounds based on a sapphire host are investigated with respect to their structural as well as electronic features. The results are obtained by electronic structure calculations within density functional theory and the generalized gradient approximation. A quarter of the Al atoms in Al₂O₃ is replaced by a 4d transition metal M ion, with d⁰ to d⁹ electronic configuration. We perform structure optimizations for all the compounds and analyze the electronic states. Due to the sizeable band gap of the Al₂O₃ host, we can identify promising candidates for transparent bulk metals. We explain the mechanisms leading to this combination of materials properties. (© 2012 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Nb高掺杂量对锐钛矿TiO2导电和光学性能影响

目前, 在Nb高掺杂量摩尔数分别为0.050和0.0625的条件下, 对掺杂体系锐钛矿TiO₂电阻最低存在相反的两种实验结果都有文献报道. 为解决这个矛盾, 本文采用基于密度泛函理论的平面波超软赝势方法, 计算了纯的单胞和三种不同Nb高掺杂量对锐钛矿Ti_1-xNb_xO₂ (x=0.03125, 0.050, 0.0625)超胞的能带结构分布、态密度分布和光学性质. 结果表明, 在本文限定掺杂量的条件下, Nb掺杂量越增加, 掺杂体系的体积越增加, 总能量越升高, 稳定性越下降, 形成能越升高, 掺杂越难, 相对自由电子浓度越增加, 电子有效质量越增加, 电子迁移率越减小, 电子电导率越减小, 最小光学带隙越变宽, 吸收光谱和反射率向低能方向移动越显著, 透射率越增加. 计算结果与实验结果相吻合.     

Preparation and characterization of GaN films by radio frequency magnetron sputtering and carbonized-reaction technique

Radio frequency magnetron sputtering/post-carbonized-reaction technique was adopted to prepare good-quality GaN films on Al₂O₃(0 0 0 1) substrates. The sputtered Ga₂O₃ film doped with carbon was used as the precursor for GaN growth. X-ray diffraction (XRD) pattern reveals that the film consists of hexagonal wurtzite GaN. X-ray photoelectron spectroscopy (XPS) shows that no oxygen can be detected. Electrical and room-temperature photoluminescence measurements show that good-quality polycrystalline GaN films were successfully grown on Al₂O₃(0 0 0 1) substrates.     

Nano-star formation in Al-doped ZnO thin film deposited by dip-dry method and its characterization using atomic force microscopy, electron probe microscopy, photoluminescence and laser Raman spectroscopy

Zinc oxide doped with Al (AZO) thin films were prepared on borosilicate glass substrates by dip and dry technique using sodium zincate bath. Effects of doping on the structural and optical properties of ZnO film were investigated by XRD, EPMA, AFM, optical transmittance, PL and Raman spectroscopy. The band gap for ZnO:Al (5.0 at. wt.%) film was found to be 3.29 eV compared with 3.25 eV band gap for pure ZnO film. Doping with Al introduces aggregation of crystallites to form micro-size clusters affecting the smoothness of the film surface. Al³⁺ ion was found to promote chemisorption of oxygen into the film, which in turn affects the roughness of the sample. Six photoluminescence bands were observed at 390, 419, 449, 480, 525 and 574 nm in the emission spectra. Excitation spectra of ZnO film showed bands at 200, 217, 232 and 328 nm, whereas bands at 200, 235, 257 and 267 nm were observed for ZnO:Al film. On the basis of transitions from conduction band or deep donors (CB, Zn_i or V_OZn_i) to valence band and/or deep acceptor states (VB, V_Zn or O_i or O_Zn), a tentative model has been proposed to explain the PL spectra. Doping with Al³⁺ ions reduced the polar character of the film. This has been confirmed from laser Raman studies.     

Exploring the electronic structure and optical properties of new inorganic luminescent materials Ba(Si,Al)5(O,N)8 compounds for light-emitting diodes devices

Due to growing demand on discovering new materials for light-emitting diodes devices, many efforts were made to discover and characterize new inorganic materials such as phosphors. Using the full potential method within density functional theory the electronic and optical properties of BaAl₂Si₃O₄N₄ and BaAlSi₄O₃N₅ semiconductors have been investigated. The electronic structure and the optical properties of these phosphors were calculated through a reliable approach of modified Beck-Johnson (mBJ) approach. We found that BaAl₂Si₃O₄N₄ and BaAlSi₄O₃N₅ have wide direct band gaps positioned at Γ about 5.846 and 4.96 eV respectively. The optical properties, namely the dielectric function, optical reflectivity, refractive index and electron energy loss, are reported for radiation up to 15 eV. Our study suggests that BaAl₂Si₃O₄N₄ and BaAlSi₄O₃N₅ could be promising materials for applications in the LEDs devices and optoelectronics areas of research.     

Investigation of the electronic structure of La1−x(M2+)xCrO3, Cr2O3 and La2O3 by X-ray photoelectron spectroscopy

The electronic structures of lanthanum chromites, pure and doped with magnesium and strontium, have been studied in comparison with Cr₂O₃ and La₂O₃ through the use of X-ray photo-electron spectroscopy. The main peaks and satellites of inner and outer electrons are properly assigned. The band structure of LaCrO₃ is determined by using the XPS data and a calculation based on point charge model. The partially filled Cr(3d) band is localized. The conduction is mainly extrinsic. The measured Fermi-level is close to the valence band indicating a low activation energy in agreement with the results of conductivity measurements.     

The mechanical,thermodynamic and electronic properties of Al3Nb with DO22 structure: A first-principles study

The lattice constants, elastic properties, electronic structure and thermodynamic properties of Al₃Nb with DO₂₂ structure have been investigated by the first-principles calculation. The calculated lattice constants were consistent with the experimental values, and the structural stability was also studied from the energetic point of view. The single-crystal elastic constants (C_ij) as well as polycrystalline elastic parameters (bulk modulus B, shear modulus G, Young's modulus E, Poisson's ratio υ and anisotropy value A) were calculated, and brittleness of Al₃Nb was discussed in detail. Besides, the electronic structure of tetragonal Al₃Nb was studied, which indicates a mixture of metallic bond and covalent bond in Al₃Nb and reveals the underlying mechanism of the stability and elastic properties of Al₃Nb. Finally, the thermodynamic properties of Al₃Nb were calculated and the physical properties such as heat capacity and Debye temperature were predicted within the quasi-harmonic approximation.     

锐钛矿相和金红石相TiO2:Nb的光电性能研究

采用基于密度泛函理论的第一性原理计算了锐钛矿相和金红石相TiO₂:Nb的晶体结构、电子结构和光学性质. 结果表明, 在相等的摩尔掺杂浓度下(6.25%), 锐钛矿相TiO₂:Nb的导带底电子有效质量小于金红石相TiO₂:Nb, 且前者室温载流子浓度是后者的两倍左右, 即具有更大的施主杂质电离率, 从而解释了锐钛矿相TiO₂:Nb比金红石相TiO₂:Nb具有更优异电学性能的实验现象. 光学计算也表明锐钛矿相在可见光区有更大的透过率, 从而在理论上解释了锐钛矿相TiO₂:Nb比金红石相TiO₂:Nb更适于做透明导电材料的原因. 计算结果与实验数据能较好符合. 关键词： 2:Nb')" href="#">TiO₂:Nb 第一性原理 电子结构 光学性能     

Thickness-dependent optical band gap in one-dimensional Ca3Co2O6 nanometric films

Recent studies on the physical properties of Ca₃Co₂O₆ nanometric samples have shown that their properties are significantly different from those of the bulk samples. The origin of this change is not trivial. We have carried out optical measurements on Ca₃Co₂O₆ thin films with different thicknesses in order to characterize their electronic structure using optical spectroscopy measurements. The absorption spectra show a dependence on the film thickness that is correlated to the grain size in the polycrystalline layers. We found that the optical band gap increases from 1.3 to 1.55 eV when the thickness changes from 35 to 100 nm. The change in the band gap evolution with the film thickness is discussed in terms of both the amorphous effect and the grain size in the Ca₃Co₂O₆ thin films. Finally, we show that these results are consistent with recent measurements concerning magnetic and electrical properties of Ca₃Co₂O₆ nanometric samples.     

Growth and characterization of new transparent conductive oxides single crystals β-Ga2O3: Sn

Tin oxide doped β-Ga₂O₃ single crystals are recognized as transparent conductive oxides (TCOs) materials. They have a larger band gap (4.8 eV) than any other TCOs, thus can be transparent in UV region. This property shows that they have the potential to make the optoelectronic device used in even shorter wavelength than usual TCOs. β-Ga₂O₃ single crystals doped with different Sn⁴⁺ concentrations were grown by the floating zone technique. Their optical properties and electrical conductivities were systematically studied. It has been found that their conductivities and optical properties were influenced by the Sn⁴⁺ concentrations and annealing.     

BiFe1-xNbxO3的结构、磁性和光学性质

用溶胶凝胶法制备了Nb掺杂多铁BiFe_1-xNb_xO₃粉晶样品（0 <x <0.05）,研究Nb掺杂对样品的结构、磁学和光学性质的影响。根据XRD图谱和Rietveld精修的结果可知,所有的样品仍保持R3c相,但晶格常数a,c,晶胞体积V和Fe-O-Fe键角发生变化。适当的Nb掺杂使得样品晶粒尺寸减小,导致剩余磁化强度的增强,使得BiFe_1-xNb_xO₃样品的禁带窄化.     

Nb-Ti-Al合金高温氧化机理电子理论研究

采用递归法计算了Nb合金的电子态密度、原子镶嵌能、亲和能和团簇能等电子结构参数,研究Nb合金高温氧化机理.研究表明,氧在Nb合金表面的吸附能较低,易在合金表面吸附,并逐渐扩散到Nb合金的基体中.氧在合金基体中镶嵌能为负值,氧的态密度和Nb相似,在Nb中具有很高的溶解度.Ti,Al在合金晶内的镶嵌能均高于各自在合金表面的镶嵌能,Ti,Al从合金内部向合金表面扩散,最终在Nb合金表面偏聚,形成富Ti,Al的表层.团簇能计算结果表明Nb合金表面的Ti,Al原子各自均有聚集倾向,分别形成Ti和Al原子团.氧与合金     

First principles study of structural,phonon, optical,elastic and electronic properties of Y3Al5O12

Structural, phonon, optical, elastic and electronic properties of Y₃Al₅O₁₂ have been investigated by means of the first principles method with the Cambridge Serial Total Energy Package (CASTEP) code based on the density functional theory. The calculated lattice parameters, valence charge density, bond length and single crystal elastic properties at zero pressure are in good agreement with the available experimental data. The close agreement with the experimental values provides a good confirmation of the reliability of the calculations. Optical, elastic and phonon properties of Y₃Al₅O₁₂ under pressures are performed. The results that are obtained show the changes of optical and elastic properties under the influence of applied pressure, and proving the dynamical stability of YAG are destructed when applied pressure up to 7 GPa. Moreover, polycrystalline elastic moduli are deduced according to the Reuss assumption. Those elastic constants provide important parameters that describe reliability of both physical model and engineering application at the atomistic level. The result of the density of states explains the nature of the electronic band structure.     

The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate

In this paper ZnO films are grown on GaAs/Al₂O₃ substrates at different temperature by metal-organic chemical vapor deposition (MOCVD). The GaAs/Al₂O₃ substrates are formed by depositing GaAs layer (∼35 nm) on the Al₂O₃ substrate. The results of X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) demonstrate that most of the Ga and As atoms form Ga-As bond and the GaAs layer does not present any orientation. The characters of the ZnO films grown on GaAs/Al₂O₃ substrates are investigated by XRD, photoluminescence (PL), atomic force microscopy (AFM) and Raman scattering. Compared with ZnO film grown on Al₂O₃ substrate, ZnO film prepared by our fabrication scheme has good crystal and optical quality. Meanwhile its grain size becomes bigger according to the AFM image. Raman analysis indicates that the intrinsic defects and the in-plane tensile stress are obviously reduced in ZnO/GaAs/Al₂O₃ samples.     

P2S5/NH4OH处理GaAs(100)表面的电子能谱研究

采用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了P₂S₅/NH₄OH钝化液处理的GaAs(100)表面的微观特性。AES测量表明,在钝化膜和GaAs衬底之间的界面处无O组分,只有P和S组分。XPS测量分析指出,经过P₂S₅/NH₄OH溶液处理后,GaAs表面处Ga₂O₃和As₂O_{3关键词：}     

Effect on the EPR and local lattice structure distortion of V3+ ion doping corundum crystal: three models studied

This paper reports on the application of conventional models (the displacement model and the elongation model) and the four-parameter model in detecting the local molecular structure of a coordination complex. By diagonalizing the complete energy matrices, the EPR parameters and optical spectra as well as the local distortion structure for V³⁺ ion in the Al₂O₃ : V³⁺ system have been studied using the three models. The four-parameter model is shown to provide a significant improvement over the conventional models. Based on these calculations, it was found that when V³⁺ is doped in Al₂O₃, the distance between upper and lower ligand oxygen plane increases by 0.16097 Å and the shifts of O^2? ions in the upper and lower ligand oxygen planes expand by 0.07076 Å and 0.004066 Å, respectively. To understand the detailed physical and chemical properties of the doped Al₂O₃, the contributions of the spin-orbit coupling to the zero-field splitting for V³⁺ ion are investigated.