| P2S5/NH4OH处理GaAs(100)表面的电子能谱研究 |
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| 引用本文： | 钟战天,罗文哲,牟善明,张开颜,李侠,李承芳.P2S5/NH4OH处理GaAs(100)表面的电子能谱研究[J].物理学报,1992,41(4):683-688. |
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| 作者姓名： | 钟战天 罗文哲 牟善明 张开颜 李侠 李承芳 |
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| 作者单位： | 中国科学院半导体研究所,北京,100083;中国科学院物理研究所表面物理国家重点实验室,北京,100080 |
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| 摘 要： | 采用俄歇电子能谱(AES)和X射线光电子能谱(XPS)研究了P2S5/NH4OH钝化液处理的GaAs(100)表面的微观特性。AES测量表明,在钝化膜和GaAs衬底之间的界面处无O组分,只有P和S组分。XPS测量分析指出,经过P2S5/NH4OH溶液处理后,GaAs表面处Ga2O3和As2O3关键词：
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| 关 键 词： | 砷化镓 半导体 钝化 表面 电子能谱 |
| 收稿时间： | 1991-04-17 |
ELECTRONIC SPECTROSCOPY STUDIES OF P2S5/NH4OH TREATED GaAs(100) SURFACE |
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| ZHONG ZHAN-TIAN,LUO WEN-ZHE,MOU SHAN-MING,ZHANG KAI-YAN,LI XIA and LI CHENG-FANG.ELECTRONIC SPECTROSCOPY STUDIES OF P2S5/NH4OH TREATED GaAs(100) SURFACE[J].Acta Physica Sinica,1992,41(4):683-688. |
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| Authors: | ZHONG ZHAN-TIAN LUO WEN-ZHE MOU SHAN-MING ZHANG KAI-YAN LI XIA and LI CHENG-FANG |
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| Abstract: | The microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by Auger electron spectroscopy (AES) and X-ray photoemission spectroscopy(XPS). AES reveals that only phosphorus and sulfur, but no oxygen, are contain-ed in the interface between passivation film and GaAs substrate. Using XPS, it is found that both Ga2O3 and As2O3 on the GaAs surface are removed by the P2S5/NH4OH treatment, moro-ver, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of surfacer state density and improving both electronic and optical properties of GaAs surface. |
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