坩埚加速旋转-垂直下降法晶体生长设备的研制

根据CdZnTe等Ⅱ-Ⅵ族化合物半导体晶体生长的基本原理和工艺要求,设计制造了坩埚加速旋转-垂直下降法(ACRT-VBM)晶体生长系统.本文介绍了该系统设计所考虑的基本问题和元器件的选择,给出了系统的基本结构.晶体生长炉的温度控制精度为±1℃,系统的速度均匀度为±0.0015mm/h.该系统的性能指标满足生长直径30mm的CdZnTe晶体的要求.     

晶体生长炉的PID神经网络温度控制算法

本文采用了数字PID与神经网络相融合的晶体生长炉温度测控方法,设计了生长晶体的PID神经网络温度控制器,并用FPGA(Field Programmable Gate Array)实现了PID神经网络的并行结构;神经网络采用符合32位IEEE754的单精度浮点数运算单元.理论分析和仿真结果表明:该PID神经网络温度控制器具有很高的控制精度和响应速度,有利于提高晶体生长炉的控温精度和加热效率.     

基于改进BP神经网络算法的激光晶体生长控制研究

针对激光晶体生长后期晶体生长炉温度上漂导致晶体不能维持等径生长的问题,采用一种基于自适应学习率优化算法改进BP神经网络与经典PID控制技术相结合的方法应用到晶体生长控制过程中,通过改进的BP神经网络的自学习以及调整加权系数,实现一种由BP神经网络整定的最佳PID控制.通过MATLAB/Simulink仿真对比表明,改进的BP神经网络PID控制算法较传统PID控制方法具有较好的控制性能和鲁棒性,能够有效克服晶体生长炉的温漂问题,更好地保持晶体等径生长,提高了控制精度.     

郑州方铭高温陶瓷新材料有限公司研制出可用于超高温晶体生长炉温场的高纯钇锆固溶体陶瓷

正郑州方铭高温陶瓷新材料有限公司日前开发出一种可用于超高温晶体生长炉的高纯钇锆固溶体陶瓷,该材料的使用温度达到2 650 ℃,比金属钼材料的使用温度更高,特别适用于泡生法蓝宝石晶体生长炉,能够有效解决泡生法制备过程中的温场温度不稳定和电能损耗问题。该材料反复升降温周期使用寿命达到3年,较金属温场提升6倍,以120 kg级蓝宝石晶体使用陶瓷温场为例,较金属温场缩短生长周期25%,节省能耗40%以上,同时还可避免金属材料高温时出现的过收缩、     

用数学模型计算生长大尺寸光学晶体加热系统结构第2部分-在Ф400mm CaF2晶体生长中计算辐射-传导热交换的方法和结果

大尺寸氟化物晶体的生长是基于对晶体炉热交换的实验研究和计算结果,在晶体生长过程的不同阶段解决了复杂结构生长容器的边界条件和温场的二维计算任务.我们在这里给出了晶体生长过程中温场设置和转变的具体数据.所有的计算都是根据晶体、熔体,容器材料的光学特性与光谱和温度的关系以及它们的热物理值与温度的关系做出的.这些结果包括了迄今有关氟化物晶体生长系统和过程的最精确的数据,可用于生长技术工艺的发展以及晶体生长炉和容器的设计.     

双坩埚三维温度梯度法蓝宝石晶体生长炉设计

在已有的三维温度梯度法(3DGF)蓝宝石晶体生长炉基础上,设计了一种双坩埚蓝宝石晶体生长炉.设计的三维温度梯度法蓝宝石晶体生长炉主要针对蓝宝石手机面板市场,将坩埚设计成长方体型,增加了材料利用率,并简化了晶体切割工艺.采用双坩埚技术,可进一步提高晶体的生产效率,节约能耗,降低成本.本设计的双坩埚3DGF蓝宝石晶体生长炉可单炉获得2个300 mm×100 mm× 100 mm的蓝宝石晶体.     

Cz法单晶硅生长过程功率及流体流动的实验研究与数值模拟

本文建立了一个二维全局模型对120 KG单晶硅炉的热系统进行了数值模拟.通过对温场的单独模拟以及温场流场的耦合模拟得到了不同模型下晶体生长所需要的功率,并将两组模拟值与实验数据进行对比得到了加入流体流动后系统所产生的功率损耗.同时对晶体生长过程的分阶段模拟得到了晶体生长过程热系统温度分布的变化规律以及熔体流动的变化规律.结果显示,在整个晶体生长过程中流体流动所产生的功率损耗占实际功率的21.6;左右.     

中红外激光晶体Er:KPb2Cl5的原料制备和晶体生长

本文是对中红外激光晶体ErKPb2Cl5的原材料处理合成和晶体生长进行的研究报道.由于KPb2Cl5的合成原料容易水解和氧化,我们设计了合适的方案对原料进行了处理,并成功合成出掺杂的稀土氯化物,然后在自制的垂直两温区晶体生长炉内,用Bridgman法成功生长出透明的尺寸为22×10×5mm3的ErKPb2Cl5单晶体,并测试了粉末衍射和吸收光谱.     

非线性光学晶体CBO的缺陷形貌分析

以碳酸铯和硼酸为原料采用泡生法生长出三硼酸铯(化学式CsB3O5,简称CBO)晶体,首次报道了利用同步辐射白光X射线形貌术对CBO晶体的(001)面、(010)面和(100)面进行了观察.观察结果表明,CBO晶体的主要缺陷是生长层.缺陷形成的原因是晶体生长炉内热流的非稳态对流和温度振荡导致晶体的微观生长率随时间变化,溶质粒子不能均匀分布在晶体生长前沿.     

玻璃衬底上中温制备多晶硅薄膜的量子态现象

用PECVD法直接沉积的非晶硅(a-Si:H)薄膜用传统炉在中温退火,然后用拉曼光谱、XRD和SEM分析,发现晶粒大小随退火温度和退火时间呈现量子态现象.分析发现在传统炉中850℃下退火三个小时晶粒大小出现极大值,平均晶粒尺寸为30nm左右.     

反应温度和升温速度对氧化锆相转变的影响

利用液相沉淀方法制备了未掺杂、氧化钇掺杂和氧化钐掺杂的纳米级氧化锆粉体.实验结果表明,高的反应温度和煅烧过程中快的升温速度明显增加了前驱体溶液中单斜氧化锆的形核数.实验和密度泛函计算结果分析认为,高的反应温度和快的升温速度均是通过降低氧化锆前驱体网状结构的有序度来影响最终的氧化锆晶型.     

Temperature Control of Protein Crystal Nucleation

Crystallography Reports - A technique of temperature-controlled biocrystal nucleation, at which the growth onset of one crystal suppresses the development of other nuclei, is proposed. This is...     

Temperature control of protein crystal nucleation

The thermal variant of the classical nucleation‐growth‐separation principle is shown, both theoretically and experimentally, to be a reliable tool for studying protein crystal nucleation. The classical nucleation theory is used to elucidate the temperature dependence of crystal nucleus size. A one‐to‐one ratio of the number density of nuclei formed to crystals grown to visible size is achieved using the nucleation‐growth‐separation method. The experiments conducted in such a way show that new nuclei are prevented from appearing while avoiding any crystal loss due to dissolution. The same method is used to study experimentally the interval of growth temperatures where the number density of (nucleated) crystals is relatively insensitive to the growth temperature. It is argued that this temperature interval corresponds to the width of the so‐called metastable zone.     

环境温度对单晶锗片低温抛光去除率的影响研究

在分析了单晶锗片低温抛光工艺的基础上,进行了四种不同参数的单晶锗片低温抛光实验.分析了不同温度条件下,单晶锗片去除速率的变化原因,提出了基于醚类辅助抛光液的自锐型低温抛光工艺,为冰冻固结磨料抛光单晶锗片的研究开辟了新途径.结果表明:环境温度对冰冻固结磨料抛光盘表层融化速率影响显著,10℃时即会导致融化过快;抛光区域摩擦产生的热量小于环境温度-10℃时的对流换热,会导致冰盘表面二次凝固;环境温度-10℃时加入醚类辅助抛光液可实现冰盘在低温下的自锐性.     

低温高强釉配方的制备

为了研制低温高硬度熔块釉配方,确定了R2O-RO-Al2O3-SiO2-B2O3低温系熔块釉配方,在此基础上,做4因素3水平的正交试验.通过灰熔点测试仪、压力试验机、XRD、SEM、维氏硬度仪等测试手段,研究9个R2O-RO-Al2O3-SiO2-B2O3系熔块釉烧成过程、物相组成、微观结构和釉面硬度.结果表明:以抗折强度和维氏硬度两个指标为基准,通过综合评分法对釉配方进行比较评分,6号釉配方的综合性能最优,熔融温度为865 ℃,抗折强度为79 MPa,维氏硬度为6006 MPa.通过4号和6号釉配方制得的釉浆来包裹支撑剂填充多孔砖,透水砖试样性能远远超过所规定的标准,性能优异,抗压强度分别为57 MPa,54.5 MPa,耐磨性即磨坑长度分别为21 mm,24 mm.     

Temperature dependence of hopping transport in polymeric semiconductors

We report the results of measurement and analysis of the electrical conductivity of two synthetic highly purified copolymers of the polyacene quinone radical (PAQR) type. The dc conductivity was examined as a function of temperature and pressure. The conductivity-pressure relation is observed to go as log σ versus $\text{P}{}^{\mathrm{<mtext>1</mtext><mtext>2</mtext>}}$. The conductivities under moderate pressure (400–5000 atm) show linear relationships on log σ versus $\text{T}{}^{\mathrm{<mtext>?</mtext><mtext>1</mtext><mtext>4</mtext>}}$ plots in the temperature range 70 K < T < 300 K. The possible interpretations as variable range hopping or as nearest neighbour hopping with distributions of activation energies are discussed.     

Temperature coefficient of electronic polarizability in optical glasses

The temperature coefficient of refractive index dn/dT and that of volume expansion β have been measured by an interferometric procedure designed to determine the coefficients simultaneously, with one sample. The temperature coefficient of electronic polarizability φ have been calculated from dn/dT and β. φ is expressed as the sum of the contributions of each glass component, φ_i·φ_i is expressed as follows: φ_i = ß_iγ_i, where ß_i is the thermal change in cation-oxygen distance and γ_i is the change in electronic polarizability due to the inter-ionic distance change. φ_i decreases as the ionic field strength z/a² of the cation increases, which is the same tendency as that of ß_i. γ_i, calculated from φ_i and ß_i, gradually increases as z/a² increases. This means that φ_i is mainly determined by the elongation of the inter-ionic distance, and it also suggests that the deformation of the electron cloud of oxygen ion due to the inter-ionic distance change, γ_i becomes larger, as the electronic polarizing power of the cation increases.     

Inversion of the Temperature Field in Optical Crystals

This article is devoted theoretical and experimental researches of temperature fields which are formed in area semi‐transparent, diffusely transmitting and scattering boundary of two optical environments. It is revealed, that thus can arise non‐monotonic or at certain conditions completely an inverse temperature field. The phenomenon of inversion of a stationary temperature field is revealed theoretically and subsequently is experimentally confirmed. The specific conditions of occurrence of the phenomenon of inversion are determined. During the crystal growth process behind the front of crystallization there can be a congestion of impurities or micro‐bubbles which are grasped by the moving front of crystallization. It results in occurrence diffusely transmitting and scattering boundary on which the radiating thermal flux going from the melt is dissipated in a growing crystal. In turn under the certain conditions it could result in non‐monotonic of temperature field in area of phase boundary and even in full inversion. The experimental equipment was developed and results of experimental measurements which completely confirm theoretical conclusions are given. The described phenomenon could be meet in growing of such optical crystals as sapphire, ruby, fluorides etc. It is specified, that the similar conditions can arise as well on boundary of solid‐gas and liquid‐gas.     

Modeling of the Biocrystal Growth Using Temperature Field

Crystallography Reports - A mathematical model has been developed and numerical calculations of lysozyme protein crystallization from a homogeneous aqueous solution under temperature field control...