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1.
孙琳  褚君浩  杨平雄  冯楚德 《物理学报》2009,58(8):5790-5797
采用传统固相法制备了(Sr1-3x/2Ax/2Ndx)Bi2Nb2O9x=0,0.05,0.1和0.2)陶瓷,并系统研究了Nd离子取代Sr离子对SrBi2Nb2O9性能的影响及其作用机理.研究结果表明:Sr1-3x/2Ax/2NdxBi2Nb2O9的介电常数和介电损耗随温度变化的行为具有明显的离子松弛极化特征.Nd3+对Sr2+的部分取代,导致Sr1-3x/2Ax/2NdxBi2Nb2O9剩余极化强度Pr稍有下降,但其压电系数d33却有所增加,根据铁电热力学理论,这是Nd3+对Sr2+取代导致材料介电常数增大所致.Sr1-3x/2Ax/2NdxBi2Nb2O9的居里温度(TC)没有随Nd含量的增加而变化,拉曼光谱技术分析表明这是其NbO6八面体畸变程度没有发生变化所致.Nd3+取代Sr2+提高了材料的介电常数εr、压电系数d33、机电耦合系数Kp,同时降低了机械品质因数Qm,但是谐振频率温度系数C值没有改变. 关键词: 压电陶瓷 介电性能 压电性能 拉曼光谱  相似文献   

2.
章少华  江柳杨  张璟  谢冰 《发光学报》2012,33(8):824-827
采用溶胶-凝胶法在还原气氛下制备了Sr2MgSi2O7∶Eu2+,xBi3+(x=0,0.02,0.04,0.06,0.08,0.1)荧光粉,并用XRD、TG-DTA及激发与发射谱仪对样品的结构及发光性能进行了表征。结果发现:单掺杂Bi3+的Sr2MgSi2O7样品的发射光谱所用的材料的激发光谱为一主峰为286 nm的宽带谱,这是由于激发态时Bi3+3P11S0电子能级跃迁而造成的;单掺杂Eu2+的Sr2MgSi2O7样品的发射光谱所用的材料的激发光谱为一主峰为358 nm的宽带谱,这是典型的Eu2+的4f65d1→4f7跃迁而引起的。当Bi3+离子掺杂到Sr2MgSi2O7∶Eu2+样品的摩尔分数为0.04时,样品的发射强度是未掺杂Bi3+离子样品的1.9倍。  相似文献   

3.
Sr2MgSi2O7:Eu2+,Dy3+是一种有效的蓝色长余辉材料,采用高温固相法合成了Sr2MgSi2O7,Sr2MgSi2O7:Dy3+,Sr2MgSi2O7:Eu2+及Sr2MgSi2O7:Eu2+,Dy3+,利用同步辐射研究了它们的VUV-UV激发特性.在真空紫外光激发下,在基质中发现了稍弱的位于385nm的发射带,在双掺杂的样品中,除了Eu2+的4f5d→4f发射带(465nm)外,还观察到了575nm处的发射峰;通过和Dy3+单掺杂样品的发射谱比较,发现它是来自于Dy3+的4f-4f(4F9/2→6H13/2)跃迁.在它们的激发谱上可以看出Dy3+与基质发射的有效激发均处于真空紫外区,在近紫外及可见区激发下未见到它们发光.另外在Sr2MgSi2O7:Eu2+,Dy3+中观察到Dy3+的发射也说明了Dy3+在该类长余辉材料中不仅作为陷阱用来延长余辉,而且也以发光中心形式存在于基质中.  相似文献   

4.
采用高温固相法合成Sr3B2O6:Eu3+,Li+红色荧光粉,考察了激活剂Eu3+和电荷补偿剂Li+浓度对Sr3B2O6:Eu3+,Li+荧光粉发光性能的影响。结果表明:适量掺杂Eu3+、Li+离子并不改变Sr3B2O6的结构。当Eu3+掺杂量为4%、Li+的掺杂量为8%时,在900 ℃下灼烧2 h可以得到发光性能最佳的Sr2.9B2O6:0.04Eu3+,0.08Li+红色荧光粉。以394 nm的近紫外光激发时,Sr3B2O6:Eu3+,Li+荧光粉发射出红光,对应于Eu3+的4f-4f 跃迁,其中以614 nm附近的5D07F2跃迁发光最强,是一种有潜力用于白光LED的红色荧光粉。  相似文献   

5.
王仁清 《发光学报》2010,31(5):686-690
采用溶胶-凝胶法在低温、还原气氛下制备了长余辉发光材料Sr4Al14O25 ∶ Eu2+,Dy3+。用X射线粉末晶衍射对其进行了物相鉴定,表明在1 200 ℃已经得到纯相的Sr4Al14O25 产物。研究了铕和锶的比值、激发光波长对所制备的Sr4Al14O25 ∶ Eu2+, Dy3+发光性能的影响并对其影响机理进行了探讨。样品的发光性能测试结果表明:采用溶胶-凝胶法制备长余辉发光材料Sr4Al14O25 ∶ Eu2+, Dy3+,其灼烧温度比高温固相法灼烧温度低;激发光谱向长波方向延伸时,在488 nm处发射峰增强,在410 nm处发射峰减弱;在一定范围内发光强度随着Eu2+量的增加而增强,Eu2+的最佳掺杂量为0.007, Eu2+的掺杂量超过0.007时会发生浓度猝灭。  相似文献   

6.
铁电钨青铜型晶体SBN和KNSBN的Raman谱研究   总被引:2,自引:0,他引:2       下载免费PDF全文
测得了Sr1-xBaxNb2O6(SBN)和(K1-yNay)z(Sr1-xBax)l-zNb2O6(KNSBN)晶体的Raman谱,并用群论和晶格动力学观点进行了讨论.为其掺杂改性提供了科学依据. 关键词:  相似文献   

7.
羌锋  朱骏  毛翔宇  陈小兵 《物理学报》2005,54(11):5422-5427
用传统固相烧结法制备了Sr2Bi4-xDyxTi5 O18(SBDT-x, x=0—0.20)陶瓷样品. x射线衍射分析表明, 微量的Dy掺杂没有影 响Sr2Bi4Ti5O18(SBTi) 原有的层状钙钛 矿结构. 通过研究样品的介电特性, 发现Dy掺杂减小了材料的损耗因子, 降低了样品铁电- 顺电相转变的居里温度. 铁电性能测量结果表明, 随Dy含量的增加, SBDT-x系列样品的剩余 极化先增大, 后减小. 当Dy掺杂量为0.01时, 剩余极化达到最大值, 约为20.1 μC·cm-2. 掺杂引起剩余极化的变化, 与材料中缺陷浓度、内应力以及晶格畸变程度等因 素有关, 是多种作用机理相互竞争的结果. (Bi2O2)2+ 层通常被看作是绝缘层和空间电荷库, 对材料的铁电性能起关键作用. 掺杂离子进入(Bi2O2)2+层会导致铁电性能变差. 关键词: 2Bi4Ti5O18陶瓷')" href="#">Sr2Bi4Ti5O18陶瓷 Dy掺 杂 铁电性能 居里温度  相似文献   

8.
采用静电纺丝法在不同气氛下制备了Sr2MgSi2O7∶Eu2+,Eu3+纤维,研究其晶体结构和形貌;将纤维与聚二甲基硅氧烷(PDMS)复合后获得Sr2MgSi2O7∶Eu2+,Eu3+-PDMS复合材料,研究其光致发光和应力发光性能。研究结果显示,氮气、空气下制备样品的XPS图谱同时出现Eu2+和Eu3+结合能特征峰;在360 nm和395 nm激发下复合材料的光致发光光谱中,不但有Eu2+位于469 nm处的蓝色宽带发射,还包含Eu3+位于615 nm的多个红色窄带发射。因为Eu3+在电荷补偿下还原成Eu2+并在刚性结构保护下不被氧化,证实了Eu3+在Sr2MgSi2O  相似文献   

9.
基质组成对Eu,Dy共掺杂铝酸锶发光性能的影响   总被引:3,自引:1,他引:2  
吕兴栋  方勤  舒万艮 《发光学报》2005,26(6):727-732
研究了基质组成对xSrO·yAl2O3:Eu2+,Dy3+体系长余辉发光性能的影响,并对其影响机理进行了探讨.XRD分析结果和长余辉发光性能表明,改变Al2O3/SrO比率可以获得长余辉发光性能较好的三种基质相:SrAl2O4:Eu2+,Dy3+、Sr4Al14O25:Eu2+,Dy3+和SrAl4O7:Eu2+,Dy3+.激发与发射光谱性能分析和余辉衰减特性分析结果表明,随着基质中Sr/Al比例的减小,激发光谱向短波方向延伸,发射峰蓝移,初始余辉亮度越高,余辉持续时间越长.热释光谱分析表明,贫锶相晶格中的陷阱深度与密度较大,因而显示出较好的长余辉发光性能.  相似文献   

10.
Sr2CrBO6(B=Os, Re, W)被证实是具有最高磁转变温度的双钙钛矿氧化物.论文采用基于密度泛函理论的第一性原理方法,计算了Sr2CrBO6的电子结构和光学性质,并通过计算结果分析了二者之间的内在关系.总体来看,B位元素的改变对材料的电子结构和光学性质都产生了较大的影响.由能带结构的计算,Sr2CrOsO6为半导体,Sr2CrReO6和Sr2CrWO6为半金属.晶体介电函数虚部ε2(ω)曲线在所考察的能量范围内存在明显的介电特征峰,论文结合态密度和能带结构讨论了这些介电峰所对应的电子跃迁过程. Sr2CrOsO6和Sr2CrReO6在可见光区域均有较强的吸收,其中,Sr2CrReO6在394 nm处的峰值吸收...  相似文献   

11.
本文用固相反应烧结制备出Li2Mo2O6多晶材料。经X射线分析、红外光谱和电子顺磁共振谱(EPR)的研究,确定了它的结构是Li2Mo2O4和MoO2两个晶相组成的烧结体。钼离子以四价状态存在于MoO2晶相结构中。采用交流阻抗谱分析了晶界与温度变化的相关性。测得了样品的ln(σT)-1/T 曲线是由两段直线和一段曲线所组成;总电导率化能σ27℃=1.36×10-3(Ω·cm)-1115℃=1.49×10-3(Ω·cm)-1300℃=9.71×10-3(Ω·cm)-1370℃=2.42×10-3(Ω·cm)-1;电导活化能E1=0.043eV,E2=0.235eV,E平均=0.76eV。采用维格纳极化电池法测得电子电导率σee27℃=2.240×10-5(Ω·cm)-1e300℃=4.476×10-3(Ω·cm)-1。实验证明,室温下材料为固体电解质,300℃附近为良好的离子与电子混合导体。 关键词:  相似文献   

12.
The pyroelectric coefficient p3 in 3La(IO3)3.HIO3.7H2O has an average value 2.0×10-5 Cm-2 in the temperature range 152 to 240 K. The resistivity decreases from 1012 to 1010 ohm-cm between 258 and 338 K. At 298 K, the piezoelectric coefficient d33  19×10-12CN-1. Positive polarity is generated on (001) by increasing temperature or tensile stress. A displacement toward (001) by La3+ or H3O+ ions of 1×10-4 Å per K or 106Nm-2, or rotation of the water molecule or iodate ion dipoles by about 5 arc minutes per K or 106Nm-2, produces the observed polarity.  相似文献   

13.
The dielectric, optical and non-linear optical properties of Ba6Ti2Nb8O30 single crystals were examined from room temperature up to the Curie temperature of 245°C. The spontaneous polarization at room temperature was estimated as 0·22±0·01 C/m2. The linear electrooptic constants were measured as r33T=(1·17±0·02)×10?10 and r13T=(0·42±0·01)×10?10 m/V. The non-linear optical coefficients were d33=(15·1±2·0)×10?12 and d31=(11·0±2·0)×10?12 m/V, which are comparable to those of Ba4Na2Nb10O30. Temperature dependences of δ33 and δ31 (Miller's δ) were found to be proportional to that of Ps.  相似文献   

14.
The ionic and electronic conductivities of the lithium nitride bromides Li6NBr3 and Li1 3N4Br have been studied in the temperature range from 50 to 220°C and 120 to 450°C, respectively. Both compounds are practically pure lithium ion conductors with negligible electronic contribution. Li6NBr3 has an ionic conductivity Ω of 2 × 10-6Ω-1cm-1 at 100°C and an activation enthalpy for σT of 0.46 eV. Li1 3N4Br shows a phase transition at about 230°C. The activation enthalpy for σT is 0.73 eV below and 0.47 eV above this temperature. The conductivities at 150 and 300°C were found to be 3.5 × 10-6 Ω-1cm-1 and 1.4 × 10-3Ω-1cm-1, respectively. The crystal structure is hexagonal at room temperature with a = 7.415 (1)A? and c = 3.865 (1)A?.  相似文献   

15.
The electrical and electrochemical properties of the solid ionic conductor UO2HPO4·3H2O were investigated within the temperature range from room temperature up to 673 K. The conductivity of a nondehydrated sample within the temperature range from 303 K (6.5 × 10-3 S/m) to 350 K (2.5 × 10-2 S/m), with the activation energy of 23 kJ/mol, is a consequence of the presence of crystal water, and originates, mostly, from the fast movement of protons across the network of molecules of water in a tunneling mechanism pattern. When heated, the conductor loses crystal water, which leads to a final change in the nature of the conductor and in the conductivity mechanism. The conductivity of the dehydrated salt UO2HPO4 (2.5 × 10-4 S/m at 488 K), with the activation energy 44.04 kJ/mol, is considerably lower than the one mentioned above and can be attributed, to a great extent, to the movement of protons, most likely by a tunneling mechanism, through the less favourable structure formed by phosphate groups of the dehydrated salt. On being heated above 623 K for a certain time, the acid phosphate transforms into pyrophosphate, the conductivity of which is lower than that mentioned above. By means of electrochemical methods, the electrode processes were studied. It has been shown that H+ and UO2+ ions are reduced at the cathode, while the phosphate groups oxidize at the anode and O2 is evolved.  相似文献   

16.
王汝菊  王积方  查济璇 《物理学报》1985,34(8):1088-1095
本文从基本的压电Christoffel方程出发导出三角晶系3m点群压电晶体弹性常数的表示式。并采用10MHz射频超声脉冲回波重合法测量了沿LiNbO3不同对称方向传播的声速,结合eij和εij5给出了LiNbO3全部弹性常数CijE和CijD。它们是C11E=19.8 关键词:  相似文献   

17.
采用射频磁控溅射技术在Pt/Ti/SiO2/Si(100)衬底上生长了掺镧钛酸铅(PLT)铁电薄膜.用X射线衍射技术(XRD)研究了PLT薄膜结晶性能,结果表明PLT薄膜为 (111)择优取向钙钛矿相织构.使用原子力显微镜(AFM)和压电响应力显微镜(PFM) 分别观察了PLT薄膜的表面形貌和对应区域的电畴结构.PFM观察显示PLT薄膜中存在90°纳米带状畴,电畴的极化为首尾相接的低能量的排列方式,带状畴的宽度为20—60nm.研究了PLT10铁电薄膜的制备条件与性能之间的关系.发现在优化条件下制备的PLT10铁电薄膜的介电常数εr为365、介电损耗tgδ为0.02,热释电系数γ为2.18×10-8C·(cm2·K)-1,可以满足制备非制冷红外探测器的需要. 关键词: PLT薄膜 电畴 PFM 极化  相似文献   

18.
NH4IO3晶体的压电性能   总被引:7,自引:0,他引:7       下载免费PDF全文
尹鑫  吕孟凯  李福奇 《物理学报》1989,38(1):124-127
用干涉法测量了NH4IO3晶体的全部压电系数。结果为: d31=35.2, d32=23.4, d33=55.9, d24=-2.4, d15=-9.5×10-8 CGSE/DYN。 关键词:  相似文献   

19.
Measurements of the electrical conductivity, magnetoresistance, and Hall effect were performed on a n-type ferromagnetic semiconductor HgCr2?xInxSe4(x = 0.100) single crystal from 6.3 to 296 K in magnetic fields up to 1.19×l06A/m. The conductivity decreases rapidly near the Curie temperatureTc (≈120 K) as the temperature is raised. A large peak in the magnetoresistance is observed near Tc. The Hall effect measurements indicate that the temperature dependence of the conductivity and the magnetoresistance are due mostly to a change in electron mobility. The electron mobility is 1.2 × 10?2 m2/V · s at 6.3 K, and decreases rapidly near Tc with the rise in temperature. Then it increases slowly from 5.5 × 10?4 m2/V · s at 160 K to 7.5 × 10?4 m2/V · s at 241 K. This temperature dependence of the electron mobility can be explained in terms of the spin-disorder scattering which takes into account the exchange interaction between charge carriers and localized magnetic moments.  相似文献   

20.
The pyroelectric properties of samples cut from various growth sectors of RbTiOPO4 single crystals grown from solution in a melt were measured in the temperature range from 4.2 to 300 K. The experimental values of the pyroelectric coefficient range from ?1.3 × 10?5 to ?4.6 × 10?5 C/m2 K. For the samples cut from the (100) sector, pronounced anomalies were revealed at 85 and 275 K, which, in our opinion, can be due to the contribution of associates formed by the coordination tetrahedra PO4(1) and PO4(2) and interstitial rubidium Rb i . At T > 280 K, superionic conductivity begins to manifest itself in all of the samples studied, which indicates the decomposition of the dipole complexes with increasing temperature. From the measured pyroelectric coefficient and birefringence along the polar direction, the spontaneous polarization of rubidium titanyl is calculated to be 0.5 C/m2 at 250 K, which is comparable in magnitude to that of lithium tantalate.  相似文献   

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