2H-PbI_2晶体的电子结构和力学性质

采用基于密度泛函平面波赝势方法(PWP)方法,计算了六角晶系2H-PbI2晶体的电子结构、力学性质和硬度.采用局域密度近似(LDA)方法计算的晶格常数、带隙、弹性常数与实验值和理论值符合较好.计算表明,2H-PbI2是一种直接带隙的半导体,带隙大约为2.38eV.运用复杂晶体硬度计算公式计算了六角晶系2H-PbI2晶体的硬度,硬度值大约为2.54GPa.还发现2H-PbI2晶体的各向异性非常明显.     

2H-PbI2晶体的电子结构和力学性质

采用基于密度泛函平面波赝势方法(PWP)方法,计算了六角晶系2H-PbI2晶体的电子结构、力学性质和硬度。采用局域密度近似(LDA)方法计算的晶格常数、带隙、弹性常数与实验值和理论值符合较好。计算表明,2H-PbI2是一种直接带隙的半导体,带隙大约为2。38eV。运用复杂晶体硬度计算公式计算了六角晶系2H-PbI2晶体的硬度,硬度值大约为2. 54 GPa。还发现2H-PbI2晶体的各向异性非常明显。     

KDP和尿素晶体电子结构的第一性原理研究

基于第一性原理的平面波超软赝势法对KDP(KH₂PO₄)和尿素(CH₄N₂O)晶体的能带结构、电子态密度、电荷差分密度以及布局分析进行了计算讨论.结果表明:尿素晶体中的C1-O1、C1-N1、N1-H2和N1-H1键都具有共价键特性,带隙值为4.636 eV,价带顶主要由H-1s与N、O的2p态贡献,导带底主要是H-1s与C、N、O的2p态贡献;KDP晶体的H1-O1键具有离子性而P1-O1则具有共价性,带隙宽度为5.713 eV,价带顶主要由O-2p以及P-3p贡献,导带底主要由H-1s、P-3s和3p以及K-4s和3p态贡献.     

高压下MgS的弹性性质、电子结构和光学性质的第一性原理研究

采用基于密度泛函理论(density functional theory)基础上的第一性原理赝势平面波方法, 计算研究了MgS晶体B2构型在不同压强下的几何结构、弹性性质、电子结构和光学性质. 计算结果表明, 在高压作用下, 该结构的导带能级有向高能级移动的趋势, 而价带能级有向低能级移动的趋势. 同时, 对照态密度分布图及高压下能级的移动情况, 分析了MgS B2构型在高压作用下的光学性质, 发现高压作用下, 吸收光谱发生了明显的蓝移.     

SiC多型体几何结构与电子结构研究

采用平面波超软赝势法和范数不变赝势法对几种SiC多型体的几何结构、能带结构等进行了系统的研究.结果表明:6HSiC导带最低点在ML线上U点,用平面波超软赝势法计算时U点在(0000,0500,0176)点附近;而用范数不变赝势法计算时在导带最低点附近能带呈现不连续点,不连续点出现在(0000,0500,0178)点附近.两种赝势法计算结果相比,用平面波超软赝势法得到的导带最低点位置更靠近布里渊区M(0,05,0)点.在平面波超软赝势下,随着六角度的增加,cp,cpa增大的趋势较为明显,能隙和价带宽度变宽的趋势也较为明显.在计算极限内,绝对零度下4HSiC系统能量最低、最稳定,而Ewald能量显示3CSiC最稳定. 关键词： 密度泛函理论 电子结构 SiC     

Cr和W掺杂的单层MoS2电子结构的第一性原理研究

采用密度泛函理论框架下的第一性原理平面波赝势方法, 研究了Cr和W掺杂对单层二硫化钼(MoS₂)晶体的电子结构性质的影响. 计算结果表明: 当掺杂浓度较高时, W对MoS₂的能带结构几乎没有影响, 而Cr的掺杂则影响很大, 表现为能带由直接带隙变为间接带隙, 且禁带宽度减小. 通过进一步分析, 得出应力的产生是导致Cr掺杂的MoS₂电子结构变化的最直接的原因.     

Bi_xBa_(1-x)TiO_3电子及能带结构的第一性原理研究

采用基于第一性原理的赝势平面波方法,研究了ABO_3钙钛矿复合氧化物BaTiO_3中A位离子被Bi原子取代后对其构型、电子及能带结构的影响.计算结果表明,Bi取代Ba之后会降低BaTiO_3的对称性,空间点群随着取代量的变化而变化,结合能逐渐降低.通过能带结构的计算发现Bi_xBa_(1-x)TiO_3为直接带隙型半导体.Bi的取代可调节Bi_xBa_(1-x)TiO_3的禁带宽度,从x=0.125到x=0.625时,Bi的取代量越大,其带隙越宽,吸收光谱蓝移.x0.625时,禁带宽度又逐渐减小,吸收光谱红移.由态密度图可看出,其价带顶主要是O-2p与Bi-6s态杂化而成,导带底主要由Ti-3d态构成.     

高压下TATB压缩性质的LDA和GGA比较研究

本文采用第一性原理密度泛函理论,结合平面波赝势方法,采用局域密度近似(LDA)和广义梯度近似(GGA)两种方法计算了TATB晶体在高压(0~7 GPa)压缩下的结构和物理性质,并与实验数据进行了比较.详细讨论了TATB晶体的晶体结构和分子构型随压力的变化.     

高压下ZnTe的电子结构和光电性质

应用第一性原理平面波赝势计算方法,研究了闪锌矿ZnTe晶体在外界压力下的电子结构和光电性质,并计算了介电函数和光学吸收系数随压力的变化情况。结果表明:在高压作用下,Te原子和Zn原子的态密度分布都向低能量方向移动,分布范围增大,Te 5p和Zn3d电子轨道杂化变强。随着压力的增大,直接带隙逐渐增大,而间接带隙逐渐变小。当压力为10.7GPa时,能带结构从直接带隙转变为间接带隙结构。压力增大,有利于Te 5p与Zn3d电子间的跃迁,光吸收系数增大,产生更多的电子-空穴对,材料导电能力增强。     

五种SiO_2晶体原子和电子结构的第一性原理研究

α-石英、β-石英、α-方石英、β-方石英和超石英是自然界中SiO_2常见的五种晶型.本文利用第一性原理平面波赝势方法,系统计算了五种SiO_2晶体的体弹性模量、电荷密度、电子态密度,能带结构,并和可获得的实验进行了比较.α-英、β-石英和具有空间群F d3m结构的β-方石英显示间接的带隙,而α-方石英,超石英和具有空间群P2_13和I42d结构的β-方石英显示直接的带隙.五种晶型SiO_2的带隙宽度均大于5.5 eV,都是绝缘体.     

Phase stability and electronic behavior of MgS,MgSe and MgTe compounds

Ab initio calculations based on density functional theory using the full-potential linearized augmented plane wave method have been carried out to find the structural stability of different crystallographic phases, the pressure-induced phase transition and the electronic properties of the magnesium chalcogenides MgS, MgSe and MgTe. The zinc blende (B3), wurtzite (B4), rock salt (B1), CsCl (B2), NiAs (B8), β-BeO, 5-5 and TiP crystal structures are considered and the exchange and correlation potential is treated by the generalized-gradient approximation using the Perdew–Burke–Ernzerhof parameterization. Moreover, the modified Becke-Johnson (mBJ) scheme is also applied to optimize the corresponding potential for the band structure calculations. Results show that the wurtzite phase is the stable structure in the ground state adopted by MgSe and MgTe compounds while MgS adopts the rock-salt one. Moreover, the band structure calculations reveal a metallic behavior in the CsCl structure for all the compounds, whereas for the other structures, a semiconducting behavior is observed.     

压力对有机半导体均苯四甲酸晶体结构转变和电子性质的影响

研究高压条件下均苯四甲酸(C₁₀H₆O₈)材料的结构和性质对探索有机半导体材料的应用有积极意义.基于密度泛函理论的第一性原理赝势平面波方法,开展了0-300 GPa压强下C₁₀H₆O₈晶体的结构、电子和光学性质的研究.晶格常数在压强20 GPa和150 GPa下出现了明显跳变,且原子之间随着压强变化反复地出现成键/断键现象,表明压强可诱导晶体结构变化.电子结构的性质表明,0 GPa的C₁₀H₆O₈晶体是带隙为3.1 eV的直接带隙半导体,而压强增加到150 GPa时,带隙突变为0 eV,表明了晶体由半导体转变为导体.当压强为160 GPa时,晶体又变成了能隙约为1eV的间接带隙半导体,这可能是费米能级附近仅受O-2p轨道电子影响所导致.通过对C₁₀H₆O₈晶体介电函数的分析,再次验证了晶体在150 GPa时发生了结构相变.同时...     

C轴压力下ZnO晶体结构及电子性质的第一性原理研究

本文采用基于密度泛函理论(DFT)的第一性原理方法对ZnO晶体在c轴取向压力作用下的晶体结构、电子结构的变化进行了研究. 结果表明,当压力在0到6 GPa区间时,晶格参数呈线性变化,带隙随压力增大而增大,显示弹性应变特征;当压力从6 GPa增大到10 GPa的过程中,晶体结构有了较大变化,出现了介于常压下纤锌矿结构和等静压高压下NaCl结构之间的类石墨结构(Graphitelike structure). 伴随着这一结构相变,ZnO的晶格参数,能隙和态密度等电子结构出现了较大跃变.     

C轴压力下ZnO晶体结构及电子性质的第一性原理研究

本文采用基于密度泛函理论(DFT)的第一性原理方法对ZnO晶体在c轴取向压力作用下的晶体结构、电子结构的变化进行了研究.结果表明,当压力在0～6 GPa区间时,晶格参数呈线性变化,带隙随压力增大而增大,显示弹性应变特征;当压力从6 GPa增大到10 GPa的过程中,晶体结构有了较大变化,出现了介于常压下纤锌矿结构和等静压高压下NaCl结构之间的类石墨结构(Graphitelike structure).伴随着这一结构相变,ZnO的晶格参数,能隙和态密度等电子结构出现了较大跃变.     

Predicted novel high-pressure phases of lithium

Under high pressure, "simple" lithium (Li) exhibits complex structural behavior, and even experiences an unusual metal-to-semiconductor transition, leading to topics of interest in the structural polymorphs of dense Li. We here report two unexpected orthorhombic high-pressure structures Aba2-40 (40 atoms/cell, stable at 60-80 GPa) and Cmca-56 (56 atoms/cell, stable at 185-269 GPa), by using a newly developed particle swarm optimization technique on crystal structure prediction. The Aba2-40 having complex 4- and 8-atom layers stacked along the b axis is a semiconductor with a pronounced band gap >0.8 eV at 70 GPa originating from the core expulsion and localization of valence electrons in the voids of a crystal. We predict that a local trigonal planar structural motif adopted by Cmca-56 exists in a wide pressure range of 85-434 GPa, favorable for the weak metallicity.     

Structural, electronic and optical properties of AgI under pressure

We report results of first-principles total-energy calculations for structural properties of the group I-VII silver iodide (AgI) semiconductor compound under pressure for B1 (rocksalt), B2 (cesium chloride), B3 (zinc-blende) and B4 (wurtzite) structures. Calculations have been performed using all-electron full-potential linearized augmented plane wave plus local orbitals FP-LAPW + lo method based on density-functional theory (DFT) and using generalised gradient approximation (GGA) for the purpose of exchange correlation energy functional. In agreement with experimental and earlier ab initio calculations, we find that the B3 phase is slightly lower in energy than the B4 phase, and it transforms to B1 structure at 4.19 GPa. Moreover, we found AgI has direct gap in B3 structure with a band gap of 1.378 eV and indirect band gap in B1 phase with a bandgap around 0.710 eV. We also present results of the effective masses for the electrons in the conduction band (CB) and the holes in the valence band (VB). To complete the fundamental characteristics of this compound we have analyzed their linear optical properties such as the dynamic dielectric function and energy loss function for a wide range of 0-25 eV.     

Sc与C掺杂MgS电子结构与光学性质的第一性原理研究

本文基于密度泛函理论的第一性原理方法,对Sc、C单掺以及共掺MgS体系的稳定性、电子结构和光学性质进行了研究,结果表明：与本征MgS体系相比,掺杂后体系的结合能仍为负值,表明掺杂体系均处于稳定状态,其中Sc-C共掺MgS体系的结合能最小,说明Sc-C共掺体系最稳定。掺杂后体系的禁带宽度均减小,表明电子由价带跃迁至导带的能量减小;此外,掺杂体系在低能区均发生了明显的红移现象,表明Sc、C掺杂能够有效的拓宽体系对可见光的响应范围。其中,Sc-C-MgS体系在费米能级附近产生了杂质能级且带隙宽度较小,在可见光范围内的吸收系数最优,可推测Sc-C共掺杂可作为提高MgS体系光催化活性的有效手段。     

Electronic and Structural High Pressure Properties of CuGaS 2 Chalcopyrite Semiconductor

We have investigated high-pressure structural properties and ab-initio band structure calculations of the ternary CuGaS 2 by single crystal X-ray diffraction up to 8 GPa. The single crystal X-ray diffraction experiments were performed in a Merrill-Bassett diamond anvil cell. The analysis of the X-ray data makes possible the accurate determination of the atomic position of the unit cell under pressure. The structural parameter u and the Cu-S and Ga-S bond lengths have been deduced. The results of the electronics band structure calculation using a first-principles pseudo-potential method and the local density approximation (LDA) are reported. The pressure derivatives of the energy gap are calculated and the values are in reasonable good agreement with the experimental ones.     

Phase Transition and Physical Properties of InS

Using the crystal structure prediction method based on particle swarm optimization algorithm, three phases(P nnm, C2/m and Pm-3 m) for InS are predicted. The new phase Pm-3m of InS under high pressure is firstly reported in the work. The structural features and electronic structure under high pressure of InS are fully investigated. We predicted the stable ground-state structure of InS was the P nnm phase and phase transformation of InS from P nnm phase to P m-3 m phase is firstly found at the pressure of about 29.5 GPa. According to the calculated enthalpies of InS with four structures in the pressure range from 20 GPa to 45 GPa, we find the C2/m phase is a metastable phase. The calculated band gap value of about 2.08 eV for InS with P nnm structure at 0 GPa agrees well with the experimental value. Moreover, the electronic structure suggests that the C2/m and P m-3m phase are metallic phases.