Comparison between N2 and O2 anneals on the integrity of an Al2O3/SiaN4/SiO2/Si memory gate stack

In this paper the endurance characteristics and trap generation are investigated to study the effects of different postdeposition anneals （PDAs） on the integrity of an Al2O3/Si3N4/SiOz/Si memory gate stack. The flat-band voltage （Vfb） turnarounds are observed in both the programmed and erased states of the N2-PDA device. In contrast, this turnaround is observed only in the erased state of the O2-PDA device. The Vfb in the programmed state of the O2-PDA device keeps increasing with increasing program/erase （P/E） cycles. Through the analyses of endurance characteristics and the low voltage round-trip current transients, it is concluded that in both kinds of device there are an unknown type of pre-existing characteristic deep traps and P/E stress-induced positive oxide charges. In the O2-PDA device two extra types of trap are also found： the pre-existing border traps and the P/E stress-induced negative traps. Based on these four types of defects we can explain the endurance characteristics of two kinds of device. The switching property of pre-existing characteristic deep traps is also discussed.     

Homogeneous interface-type resistance switching in Au/La0.67Ca0.33MnO3/SrTiO3/F:SnO2 heterojunction memories

La0.67Ca0.33MnO3 thin films are fabricated on fluorine-doped tin oxide conducting glass substrates by a pulsed laser deposition technique with SrTiO3 used as a buffer layer. The current-voltage characteristics of the heterojunetions exhibit an asymmetric and resistance switching behaviour. A homogeneous interface-type conduction mechanism is also reported using impedance spectroscopy. The spatial homogeneity of the charge carrier distribution leads to field- induced potential-barrier change at the Au-La0.67Ca0.33MnO3 interface and a concomitant resistance switching effect. The ratio of the high resistance state to the low resistance state is found to be as high as 1.3 x 10^4% by simulating the AC electric field. This colossal resistance switching effect will greatly improve the signal-to-noise ratio in nonvolatile memory applications.     

An electron spin resonance study of Eu doping effect in La4/3Srs/3Mn2O7 single crystal

The effect of Eu3＋ ion doping in the La sites of single-crystal La4/3Srs/3Mn2O7 was investigated. Electron spin resonance （ESR） was applied to La4/3Sr5/3Mn2O7 and （Lao.8Euo.2）4/3Sr5/3Mn2O7 single crystals. A phase separation and phase transitions were observed from the ESR spectra data. Between 350 K and 300 K, both paramagnetic resonance （PMR） and anisotropic ferromagnetic resonance （FMR） lines were observed in the ab plane and the c axis direction, suggesting a coexistence of the paramagnetic （PM） phase and the ferromagnetic （FM） phase. The magnetization measurement reveals a spin-glass-like behavior in single-crystal （Lao.8Euo.2）4/3 Sr5/3Mn2O7 below the temperature of spin freezing Tf （- 29.5 K）.     

Er3+/Ce3+共掺TeO2-Bi2O3-TiO2玻璃的热稳定性和光谱特性研究

用高温熔融法制备了Er³⁺/Ce³⁺共掺新型碲酸盐玻璃(TeO₂-Bi₂O₃-TiO₂).采用差热分析方法研究了玻璃的热稳定性,测试并分析了不同Ce³⁺离子掺杂浓度下Er³⁺离子的吸收光谱、上转换光谱和荧光光谱特性.研究结果表明,制备的碲酸盐玻璃具有很好的热稳定性,玻璃析晶温度Tx与玻璃转变温度Tg之差(ΔT=Tx-Tg)达到了185 ℃,高于其它文献的报道|同时,Ce3+离子共掺引入的能量转移(Ce³⁺∶2F5/2+Er³⁺∶4I11/2→Ce³⁺∶2F7/2+Er³⁺∶4I13/2)有效地抑制了Er³⁺离子上转换发光并显著增强了1.53 μm波段荧光强度,而发射截面随着Ce³⁺离子掺杂浓度相应增大.优异的热稳定性以及光谱性能揭示Er³⁺/Ce³⁺共掺碲酸盐玻璃是一种潜在的制备宽带掺铒光纤放大器的理想增益介质.     

Si1Sb2Te3 phase change material for chalcogenide random access memory

This paper investigated phase change Si1Sb2Te3 material for application of chalcogenide random access memory. Current-voltage performance was conducted to determine threshold current of phase change from amorphous phase to polycrystalline phase. The film holds a threshold current about 0.155 mA, which is smaller than the value 0.31 mA of Ge2Sb2Te5 film. Amorphous Si1Sb2Te3 changes to face-centred-cubic structure at ~ 180℃ and changes to hexagonal structure at ~ 270℃. Annealing temperature dependent electric resistivity of Si1Sb2Te3 film was studied by four-point probe method. Data retention of the films was characterized as well.     

Tuning the multiferroic properties of Pb(Fe1/2Nb1/2)O3 by cationic substitution

A series of substituted lead iron niobate compounds with the general formula Pb²⁺_(1−x)A^Z_x(Fe_{{(1−(2−Z)x)/2}}Nb_{{(1+(2−Z)x)/2}})O₃ (0<x<0.6 and A=La³⁺, K⁺ or Sr²⁺) were prepared by a modified solid-state synthesis. The relative concentrations of Fe³⁺ and Nb⁵⁺ were adjusted to compensate the charge imbalance due to the aliovalent substitution. The dielectric constant and magnetic susceptibilities were studied as a function of temperature. The temperature of the dielectric maximum, T_M, of the substituted compounds decreased linearly with increasing concentration of the substituent ions. The magnetic measurements showed an antiferromagnetic transition at temperatures T_N1 due to the superexchange interactions mediated by Fe–O–Fe and an additional antiferromagnetic-type transition at T_N2. T_N1 linearly increased with the increasing concentration of Fe³⁺ ion at the B-site of ABO₃-type substituted compounds. T_M is shown to be directly dependent on the concentration of the ferroactive Nb⁵⁺ ions at the B-site and Pb²⁺ ions at the A-site.     

Enhanced ferroelectricity and ferromagnetism in Bio.9Bao. 1FeO3/Laz/3Srl/3MnO3 heterostructure grown by pulsed laser deposition

Bi0.9Ba0.lFeO3 （BBFO）/La2/3Srl/3MnO3 （LSMO） heterostructures are fabricated on LaA103 （100） substrates by pulsed laser deposition. Giant remnant polarization value （~ 85 μC/cm2） and large saturated magnetization value （~ 12.4 emu/cm3） for BBFO/LSMO heterostructures are demonstrated at room temperature. Mixed ferroelectric domain structures and low leakage current are observed and in favor of enhanced ferroelectrie properties in the BBFO/LSMO het- erostructures. The magnetic field-dependent magnetization measurements reveal the enhancement in the magnetic moment and improved magnetic hysteresis loop originating from the BBFO/LSMO interface. The heterostructure is proved to be effective in enhancing the ferroelectric and ferromagnetic performances in multiferroic BFO films at room temperature.     

Ba2SiO4:Ce3+,Mn2+荧光粉的制备与光谱性质

用高温固相反应法合成了Ba₂SiO₄:xCe³⁺,yMn²⁺(x=0~0.2, y=0~0.15)荧光粉,研究了荧光粉的晶体结构和发光性质。在紫外光激发下,Ba₂SiO₄:xCe³⁺的发射光谱为位于384 nm附近的宽带。Ba₂SiO₄:Mn²⁺样品的发射光谱位于376 nm的宽带较强,红光发射极弱。在Ce³⁺和Mn²⁺共掺的Ba₂SiO₄:xCe³⁺,yMn²⁺样品中,位于606 nm附近的红光发射较强,来源于Mn²⁺的⁴T₁(⁴G)-⁶A₁(⁶S)跃迁。这说明Ce³⁺离子将部分能量传递给了Mn²⁺离子,有效地敏化了Mn²⁺离子的发光。当Ce³⁺的摩尔分数为0.2、Mn²⁺的摩尔分数为0.075时,Ba₂SiO₄:xCe³⁺,yMn²⁺荧光粉位于606 nm的Mn²⁺的发射峰最强。     

Ferromagnetism in one-dimensional Hubbard model induced by the next-nearest-neighbor hopping at electron density 3/2

Ferromagnetism in the one-dimensional Hubbard model with the next-nearest-neighbor hopping is explored by using the exact-diagonalization method in a small cluster and the equation-of-motion method in the thermodynamic limit with electron density n = 3/2. With these two complementary methods, it is found that an intermediate value of the next-nearest- neighbor hopping amplitude tl tends to stabilize the fully polarized ferromagnetic state under the condition that the on-site coulomb interaction U is sufficiently large in our model. The ground-state phase diagram of the model is presented in the tl-U plane.     

Subsolidus phase relation in the Bi2O3-Fe203-La2O3 system

Bismuth-containing semiconductor material is a hot topic in photocatalysts because of its effective absorption under the visible light. In this paper, we expect to explore a new bismuth-based photocatalyst by studying the subsolidus phase relations of the Bi2O3-Fe2O3-La2O3 system. The X-ray diffraction data shows that in this ternary system the ternary compound does not exist, while seven binary compounds （including one solid solution series Bi1-xLaxO1.5 with 0.167 〈 x 〈 0.339） are obtained and eight compatibility triangles are determined.     

Effect of alumina thickness on Al_2O_3/InP interface with post deposition annealing in oxygen ambient

In this paper, the effect of alumina thickness on Al2O3/InP interface with post deposition annealing （PDA） in the oxygen ambient is studied. Atomic layer deposited （ALD） Al2O3 films with four different thickness values （5 nm, 7 nm, 9 nm, 11 rim） are deposited on InP substrates. The capacitance-voltage （C-V） measurement shows a negative correlation between the alumina thickness and the frequency dispersion. The X-ray photoelectronspectroscopy （XPS） data present significant growth of indium-phosphorus oxide near the Al2O3/InP interface, which indicates serious oxidation of InP during the oxygen annealing. The hysteresis curve shows an optimum thickness of 7 nm after PDA in an oxygen ambient at 500 ℃ for 10 min. It is demonstrated that both sides of the interface are impacted by oxygen during post deposition annealing. It is suggested that the final state of the interface is of reduced positively charged defects on Al2O3 side and oxidized InP, which degrades the interface.     

Finite-field calculation of electric quadrupole moments of ~2P_(3/2),~2D_(3/2,5/2),and ~2F_(5/2,7/2) states for Yb~+ ion

Electric quadrupole moments of low-lying excited states of Yb~+ are calculated by relativistic coupled-cluster theory with perturbations from external fields.The field-dependent energy differentiation provides accurate values of the electric quadrupole moments o f~2P_(3/2),~2D_(3/2,5/2),and~2F_(5/2,7/2) states which agree well with experimental values.The important role of the electronic correlation to the electric quadrupole moments is investigated.Our calculations indicate the early dispute of the electric quadrupole moment of the Yb~+(~2F_(7/2))state for which the measured and theoretical values have a large discrepancy.These electric quadrupole moment values can help us to determine the electric quadrupole shifts in start-of-the-art experiments of the Yb~+ ion.     

Production of CH （A2△） by multi-photon dissociation of （CH3）2CO,CH3NO2, CH2Br2, and CHBr3 at 213 nm

In order to realize electrostatic Stark deceleration of CH radicals and study cold chemistry, the fifth harmonic of a YAG laser is used to prepare CH(A2△) molecules through using the multi-photon dissociation of(CH3)2CO, CH3NO2, CH2Br2,and CHBr3 at ～ 213 nm. The CH product intensity is measured by using the emission spectrum of CH(A2△→ X2Π). The dependence of fluorescence intensity on laser power is studied, and the probable dissociation channels are analyzed. The relationship between the fluorescence intensity and some parameters, such as the temperature of the beam source, stagnation pressure, and the time delay between the opening of pulse valve and the photolysis laser, are also studied. The influence of three different carrier gases on CH signal intensity is investigated. The vibrational and rotational temperatures of the CH(A2△) product are obtained by comparing experimental data with the simulated ones from the LIFBASE program.     

MoO3/Ag/AI/ZnO intermediate layer for inverted tandem polymer solar cells

We report an MoO3/Ag/Al/ZnO intermediate layer connecting two identical bulk heterojunction subcells with a poly（3-hexylthiophene） and [6,6]-phenyl-C61-butyric acid methyl ester （P3HT and PCBM） active layer for inverted tan- dem polymer solar cells. The highly transparent intermediate layer with an optimized thickness realizes an Ohmic contact between the two subcells for effective charge extraction and recombination. A maximum power conversion efficiency of 3.76% is obtained for the tandem cell under 100 mW/cm2 illumination, which is larger than that of a single cell （3.15%）. The open-circuit voltage of the tandem cell （1.18 V） approaches double that of the single cell （0.61 V）.     

Projectile fragment emission in the fragmentation of 56Fe on C,Al and CH2 targets at 471 A MeV

The emission angle and the transverse momentum distributions of projectile fragments produced in the fragmentation of 56Fe on CHs, C and A1 targets at 471 A MeV are measured. It is found that for the same target, the average value and width of the angular distribution decrease with an increase of the projectile fragment charge; for the same projectile fragment, the average value of the distribution increases and the width of the distribution decreases with increasing the target charge number. The transverse momentum distribution of a projectile fragment can be explained by a single Gaussian distribution and the averaged transverse momentum per nucleon decreases with the increase of the charge of projectile fragment. The cumulated squared transverse momentum distribution of a projectile fragment can be explained well by a single Rayleigh distribution. The temperature parameter of the emission source of the projectile fragment, calculated from the cumulated squared transverse momentum distribution, decreases with the increase of the size of the projectile fragment.     

MEH-PPV/Alq_3-based bulk heterojunction photodetector

In this paper, we present the effect of varied illumination levels on the electrical properties of the organic blend bulk heterojuction （BHJ） photodiode. To prepare the BHJ blend, poly（2-methoxy-5（2P-ethylhexyloxy） phenyleneviny- lene （MEH-PPV） and aluminum-tris-（8-hydroxyquinoline） （Alq3） are used as donor and acceptor materials, respectively. In order to fabricate the photodiode, a 40-nm thick film of poly（3, 4-ethylendioxytbiophene）：poly（styrensulfonate） （PE- DOT：PSS） is primarily deposited on a cleaned ITO coated glass substrate by spin coating technique. The organic photo- sensitive blend is later spun coated on the PEDOT：PSS layer, followed by the lithium fluoride （LiF） and aluminium （A1） thin films deposition by thermal evaporation. The optical properties of the MEH-PPV：Alq3 blend thin films are investigated using photoluminescence （PL） and UV-Vis spectroscopy. The photodiode shows good photo-current response as a function of variable illumination levels. The responsivity value - 8 mA/W at 3 V is found and the ratio of photo-current to dark current （lph/IDark） is found to be 1.24.     

Transport properties and anomalous fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures

The transport properties and fatigue effect of Ag/Bi0.9La0.lFeO3/La0.7Sr0.3MnO3 heterostructures are described. By examining the I-V curves, an anomalous fatigue effect was found and its influences on resistive states were studied. I-V curves combined with C-f spectra were used to directly analyze the transport properties and fatigue effect. Compared to the first I-V cycle state, this structure shows more than one order increase of resistance after 100 cycles of ＂I-V curve training＂. The redistribution of oxygen vacancies in the depletion layer of Ag/Bi0.9La0.lFeO3 is believed to be responsible for the different resistance mechanisms and tenfold magnitude drop in resistance. The resistive switching is understood to be caused by electric field-induced carrier trapping and detrapping, which changes the depletion layer thickness at the Ag/Bi0.9La0.lFeO3 interface.     

Low-temperature AC conductivity of Bi2Sr2CaCu2O8+δ

We report measurements of anamolously large dissipative conductivities, σ₁, in Bi₂Sr₂CaCu₂O_8+δ at low temperatures. We have measured the complex conductivity of Bi₂Sr₂CaCu₂O_8+δ thin films at 100–600 GHz as a function of doping from the underdoped to the overdoped state. At low temperatures there exists a residual σ₁ which scales with the T=0 superfluid density as the doping is varied. This residual σ₁ is larger than the possible contribution to σ₁ from a thermal population of quasiparticles (QP) at the d-wave gap nodes.     

Recent results from NA48/2

Recent results on radiative K^± decays from the NA48/2 experiment are reported. From the full NA48/2 data set, about a million K^±→π^±π^γ decays were reconstructed. Based on this sample, the first measurement of the interference between direct photon emission and inner bremsstrahlung in K^±→π^±π^γ decays was performed. Stringent limits on CP violation in this decay were also set. In addition, a precise measurement of the branching fraction of K^±→π^±γγ is presented. This measurement was based on a data sample of more than 1000 event candidates. Also the related decay K^±→π^±e^＋e^-γ has first been observed. Results of the measurement of the decay rate and the decay parameter 5 are summarized.     

Thermal properties of high-k Hf1-xSixO2

Classical atomistic simulations based on the lattice dynalnics theory and the Born core-shell model are performed to systematically study the crystal structure and thermal properties of high-k Hfl-xSixO2. The coefficients of thermal expansion, specific heat, Griineisen parameters, phonon densities of states and Debye temperatures are calculated at different temperatures and for different Si-doping concentrations. With the increase of the Si-doping concentration, the lattice constant decreases. At the same time, both the coefficient of thermal expansion and the specific heat at a constant volume of Hf1-mSixO2 also decreases. The Griineisen parameter is about 0.95 at temperatures less than 100 K. Compared with Si-doped HfO2, pure HfO2 has a higher Debye temperature when the temperature is less than 25 K, while it has lower Debye temperature when the temperature is higher than 50 K. Some simulation results fit well with the experimental data. We expect that our results will be helpful for understanding the local lattice structure and thermal properties of Hf1-mSixO2.