自发有序Ga_(0－5)In_(0－5)P合金的静压光致发光研究

在０—７ＧＰａ静压范围内测量了自发有序Ｇａ０５Ｉｎ０５Ｐ合金的室温光致发光谱．三块样品的常压带隙能量分别比无序样品低１１５，９２和４３ｍｅＶ，它们的压力系数也从无序样品的９２ｍｅＶ／ＧＰａ分别减小到７５，８１和８３ｍｅＶ／ＧＰａ．用ΓＬ相互作用模型可以同时解释有序合金的带隙能量的降低以及压力系数的减小．得到的ΓＬ相互作用势分别为０１９，０１５和０１０ｅＶ．表明在自发有序Ｇａ０５Ｉｎ０５Ｐ合金中存在着的沿［１１１］方向的有序是带隙能量降低的主要原因．在样品Ｃ中还观察到了明显的ΓＸ反交叉行为．拟合得到的ΓＸ相互作用势为００１１ｅＶ，比ΓＬ相互作用势小一个数量级．表明在此样品中除［１１１］有序外还存在弱的［００１］有序     

MOCVD生长Ga0.5In0.5P外延层光学性质的研究

本文用光致发光(PL)研究了MOCVD(金属氧化物化学气相沉积)生长的有序Ga_0.5In_0.5P外延层的光学性质.发现有序程度较强的Ga_0.5In_0.5样品的PL谱中一峰的能量随温度升高,先增大而后又减小.根据已有的报道和本文的实验结果,提出了一个有序Ga_0.5In_0.5P的模型,模型中将有序Ga_0.5In_0.5P看作阶宽随机分布的Ⅱ型多量子阱结构,能带边之下存在带尾态,并用该模型对实验结果进行了较好的解释.     

非线性光学晶体HgGa2S4 和 Hg0.5Cd0.5Ga2S4的能带结构、化学键及光学性质研究

用密度泛函理论和非谐振子模型计算了晶体HgGa₂S₄和Hg_0.5Cd_0.5Ga₂S₄的能带结构、态密度、化学成键及线性、非线性光学性质。结果表明：HgGa₂S₄的价带顶部主要是Ga-S成键态的贡献，导带底部主要是Ga-S反键态的贡献; Hg_0.5Cd_0.5Ga₂S₄的价带顶部主要由S-3p轨道组成，导带底部主要是Ga-S反键态的贡献。布居分析表明Ga-S键主要是共价成分，而Hg-S和Cd-S键主要是离子成分。HgGa₂S₄的折射率计算值与实验值在低能量区很好吻合。另外，HgGa₂S₄的能隙计算值比Hg_0.5Cd_0.5Ga₂S₄小，而二阶非线性极化率比Hg_0.5Cd_0.5Ga₂S₄大。     

Cu掺杂Ga2O3薄膜的光学性能

采用射频磁控溅射和N₂气氛退火处理制备了多晶Ga₂O₃薄膜和Cu掺杂Ga₂O₃薄膜.用X射线衍射仪、紫外-可见分光光度计、荧光光谱仪对Ga₂O₃薄膜和Cu掺杂Ga₂O₃薄膜的结构和光学性能进行了表征.结果表明,Cu掺杂后Ga₂O₃薄膜的结晶质量变差,透过率明显降低,吸收率增加,光学带隙减小.本征Ga₂O₃薄膜在紫外、蓝光和绿光出现了发光带,Cu掺杂后紫外和蓝光发射增强,且在475 nm 处出现了一个新的发光峰.     

He+辐照对Ga0.94Mn0.06As薄膜铁磁性的改善

离子辐照半导体可以很好的改善半导体材料的磁学性质.用He⁺ 辐照Ga_0.94Mn_0.06As薄膜,可以较方便的调制Ga_0.94Mn_0.06As 薄膜中产生铁磁性载体的浓度.由于空穴居间而导致Ga_0.94Mn_0.06As薄膜的铁磁性, 可以通过He⁺的辐照来得到改善,其结果是Ga_0.94Mn_0.06As薄膜的矫顽力可以增加3倍多. 当He⁺辐照流强增加时, 居里温度和沿着样品面外磁化难轴方向的饱和磁场都减小了. 被辐照的Ga_0.94Mn_0.06As薄膜的电学性质和结构特征显示, He⁺辐照Ga_0.94Mn_0.06As薄膜可以有控制地改善它的铁磁性, 其结果源于He⁺辐照Ga_0.94Mn_0.06As薄膜所诱导产生电缺陷对空穴的补偿, 而不是He⁺辐照改变了Ga_0.94Mn_0.06As薄膜的结构.     

GeS2-Ga2S3-CsCl玻璃的三阶非线性光学性能研究

用传统的熔融急冷法制备了组分为(100-2x) GeS₂-xGa₂S₃-xCsCl (x= 15, 20, 25 mol%)系列硫卤玻璃, 测试了样品玻璃的吸收光谱. 采用Z-扫描方法测试了样品的三阶非线性光学特性. 分析了激光光子能量与玻璃三阶非线性光学特性的关系,并研究了组分变化对玻璃的三阶非线性性能的影响. 研究结果表明,光子能量的少许改变可以使非线性吸收系数在一个较大的范围内变化,随着光子能量的增大, 玻璃的非线性吸收系数β 增大;当光子能量趋近于0.5E_g时, β值趋近于0,玻璃有最佳的品质因子; 玻璃样品中CsCl含量的增加使得玻璃的光学带隙E_g增大,短波截止边蓝移,非线性吸收系数β 减小. 但是由于结构与带隙对光学非线性的影响相反,非线性折射率γ 值变化不大. 该结果表明样品的光学非线性性能由光学带隙和结构两方面因素共同决定,对今后研究全光开关用硫系玻璃具有一定的指导意义和参考价值.     

Cr75Fe16Mn9合金的低频内耗

测量了自旋密度波材料Cr₇₅Fe₁₆Mn₉的低频内耗,实验温区为100—600K,测量频率低于10Hz．在高于Néel温度的顺磁相中观察到450K附近的内耗峰和相应的总模量的跳变,反映了合金中各组分的自旋状态在微区内的无序-有序转变．在200—300K之间观察到一个宽的内耗峰区,它是由280K的单峰和270—220K延展的宽峰组成,其相对应的总模量表现为宽范围的少量减小．此宽峰可能与该合金中自旋密度波反铁磁转变以及磁多相共存有关．实验表明,     

针状纳米MnxNi0.5-xZn0.5Fe2O4的共沉淀法制备及表征

通过在碱液中共沉淀Mn²⁺、Ni²⁺和Fe²⁺后制备了棒状的前躯体,前躯体于不同温度煅烧后制得了Mn_xNi_0:5-xZn_0:5Fe₂O₄棒状体. 利用X射线衍射仪和透射电镜对棒状体的物相、形貌及粒径进行了表征,并利用振动样品磁强计对磁性能进行研究. 结果表明长径比大于15的棒状,随着x值的增加,Mn_xNi_0:5-xZn_0:5Fe₂O₄样品的直径增加,长度下降,长径比变小,当x=0.5时其直径在50 nm左右而长径比减小到7～8. 随着x值的增加,样品的矫顽力先增加后减少,x值达到0.4时样品的矫顽力再次增加,当煅烧温度为600 oC,x=0.5时样品的矫顽力最大为134.3 Oe. 饱和磁化强度随着x值的增加先增加后减少,当煅烧温度为800 oC和x=0.2时达到最大为68.5 Oe.     

GaInP材料生长及其性质研究

用常压MOCVD在半绝缘GaAs衬底上生长了Ga_xIn_1-xP(x=0.476～0.52)外延层,对外延层进行了X光双晶衍射、Hall和光致发光(PL)测试.77K下电子迁移率达3300cm²/V.s(浓度为1.4×10¹⁶cm^-3).载流子浓度随生长温度升高,随Ⅴ/Ⅲ比的增大而降低,并提出P空位(V_p)是自由载流子的一个重要来源,17KPL谱中,Ga_0.5In_0.5P(Tg=650℃,Ⅴ/Ⅲ=70)的峰能为1.828eV,半峰宽为19meV.另外,在1.849eV处还有一较弱的峰,GaInP峰能和其计算的带隙最大相差113meV,这可能与GaInP中杂质或缺陷以及其中存在有序结构有关.     

高迁移率InGaAs/InP量子阱中的有效g因子

利用化学束外延法制备了高迁移率的In_0.53Ga_0.47As/InP量子阱样品. 在样品的低温磁输运测试中, 观察到纵向磁阻的Shubnikov-de Hass (SdH) 振荡和零场自旋分裂引起的拍频. 本文提出一种解析的方法, 即通过同时拟合不同倾斜磁场下SdH振荡的傅里叶变换谱, 得到有效g因子的大小.     

Time-resolved photoluminescence study of Ga In P alloys

The time-resolved photoluminescence spectra of ordered and disordered Ga_0.52In_0.48P alloys were studied at room temperature and at 77 K liquid nitrogen, respectively. The ordered samples have well fitted two exponential processes decay curves and the time constants are sample dependent and have little relationship with the ordering degree. The decay curve of disordered sample shows that it has single exponential process and its lifetime has a tendency of reduction with the decrease of excitation intensity. The photoluminescence spectra with different delay time at 77 K show that the ordered samples exhibit about 6 ∼ 10 meV blue-shift of PL peak energy with the delay time. Received 13 December 2001 Published online 19 July 2002     

自发有序Ga_（0．5）In_（0．5）P合金的拉曼光谱研究

自发有序Ｇａ＿（０．５）Ｉｎ＿（０．５）Ｐ合金的拉曼光谱研究李国华，刘振先，韩和相，汪兆平，董建荣（中国科学院半导体研究所，半导体扭晶格国家重点实验室北京１０００８３）（中国科学院半导体研究所，半导体材料科学实验室北京１０００８３））ＲａｍａｎＳｃａ...     

Spatial variation of bandgap energy in In0.53Ga0.47As

We report the observation of spatial variation of the bandgap energy of In_0.53Ga_0.47As in high quality epitaxial samples grown lattice matched to InP. Nine samples grown by three different techniques (LPE, VPE and MBE) were investigated and they all showed this apparently random spatial variation. A bandgap variation as large as 15 meV was observed over distances of the order of 1 mm, an effect corresponding to two percent of bandgap energy.     

Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication

We report structural and optical properties of In_0.5Ga_0.5As/GaAs quantum dots (QDs) in a 100 Å-thick In_0.1Ga_0.9As well grown by repeated depositions of InAs/GaAs short-period superlattices with atomic force microscope, transmission electron microscope (TEM) and photoluminescence (PL) measurement. The QDs in an InGaAs well grown at 510 °C were studied as a function of n repeated deposition of 1 monolayer thick InAs and 1 monolayer thick GaAs for n=5–10. The heights, widths and densities of dots are in the range of 6–22.0 nm, 40–85 nm, and 1.6–1.1×10¹⁰/cm², respectively, as n changes from 5 to 10 with strong alignment along [1 −1 0] direction. Flat and pan-cake-like shape of the QDs in a well is found in TEM images. The bottoms of the QDs are located lower than the center of the InGaAs well. This reveals that there was intermixing—interdiffusion—of group III materials between the InGaAs QD and the InGaAs well during growth. All reported dots show strong 300 K-PL spectrum, and 1.276 μm (FWHM: 32.3 meV) of 300 K-PL peak was obtained in case of 7 periods of the QDs in a well, which is useful for the application to optical communications.     

Ba0.5Sr0.5TiO3有序构型的第一性原理研究

采用第一性原理计算了Ba_0.5Sr_0.5TiO₃三种有序构型的晶格结构和对应的电子结构,晶格结构的详细分析结果表明BST{100}有序构型为四方相,Ti-O八面体中Ti原子和Ba-Sr平面上的O原子沿[100]方向分别偏心位移0.040 Å和0.065 Å,八面体畸变导致反平行自发极化出现,构型处于反铁电态. BST{110}构型也是四方相,并且(110)和(1 关键词： 钛酸锶钡 第一性原理 有序结构 铁电性     

(Al0.1Ga0.9)0.5In0.5P材料的MOCVD生长温度窗口研究

用来制作光电子器件的(Al0.1Ga0.9)0.5 In0.5P为直接带隙的四元合金材料,对应的发光波长为630 nm,在其LP-MOCVD (low press-metalorganic chemical vapor deposition)外延生长过程中温度的高低成为影响其质量的关键,找到合适的生长温度窗口很有必要.实验中分别在700℃,680℃,670℃和660℃的条件下生长出作为发光二极管有源区的(Al0.1Ga0.9)0.5 In0.5P多量子阱结构,通过PL谱的测试对比分析,找出最佳生长温度在670℃附近.之后对比各外延片的PL谱、表面形貌,并对反应室的气流场进行了模拟,对各温度下生长状况的原因作出了深入分析.分析得到,高温下In组分的再蒸发会引起晶格失配并导致位错;低温下O杂质的并入会形成大量非辐射复合中心影响晶体质量,因此导致了(Al0.1Ga0.9)0.5In0.5P生长温度窗口较窄,文章最后提出In源有效浓度的提高是解决高温生长的一条有效途径.     

Photoluminescence of InGaAs/GaAs strained-layer quantum well structures under high pressure

Abstract

Measurements of the photoluminescence (PL) of strained In_0.2Ga_0.8As/GaAs and In_0.15Ga_0.85As/GaAs quantum well structures together with the PL from bulk GaAs, in a diamond anvil cell show that the pressure coefficient of the ground confined state in the wells depends upon well width (L_Z). In the thinnest wells, the coefficient is closer to that of the bulk GaAs (10.7 meV/kbar), as expected. However, in the widest wells the coefficients tend to values (9.5meV/kbar for the 15% alloy and 9.1meV/kbar for the 20% alloy) that are significantly lower than the pressure coefficient of unstrained In_0.53Ga_0.47As (10.9meV/kbar). It is found that the low pressure coefficients can not be explained by the change in uniaxial stress with pressure due to a difference in bulk moduli between the barrier and well.     

Spontaneous one-dimensional lateral alignment of multistacked InGaAs quantum dots on GaAs (n 1 1)B substrates

In_0.45Ga_0.55As/GaAs multistacking quantum dot (QD) structures were fabricated on a GaAs (n 1 1)B (n=2–4) substrate by metalorganic vapor-phase epitaxy. QDs spontaneously aligned in the [0 1 1] direction were observed on stacked QDs, whereas QDs were randomly distributed in the initial In_0.45Ga_0.55As layer growth. The formation mechanism of this self-alignment was studied by changing the number of In_0.45Ga_0.55As/GaAs multilayers and crystallographic arrangement. Photoluminescence spectra showing clear polarization dependence indicate carrier coupling in the QD arrays. This growth technique results in spontaneously aligned InGaAs QDs without any preprocessing technique prior to growth.     

LP MOVPE growth of AlGalnP/GalnP and its application to visible laser diodes

High-quality and uniform bulk layers of (Al _x Ga_1–x )_0.5In_0.5P (x=0–0.7) and AlGalnP/GainP quantum wells (QWs) are grown on 2°-off (100) GaAs substrates by low-pressure metal organic vapour phase epitaxy at a low growth rate of 0.3 nm s^-1. The amount of lattice mismatch and the variation of PL peak energy of (Al_0.5Ga_0.5)_0.5In_0.5P on the 50-mm substrate are less than 6×10^-4 and 2 meV, respectively. (Al_0.5Ga_0.5)_0.5In_0.5P/Ga_0.5In_0.5P SQWs show narrow PL spectra even from a 0.6 nm well measured at 20 K. The variation of PL peak energy from (Al_0.5Ga_0.5)_0.5In_0.5P/Ga_0.5In_0.5P MQWs is less than 10 meV. Also, as-cleaved AlGalnP/GalnP lasers fabricated by a three-step MOVPE show a pulsed threshold current of 82 mA at room temperature, output power of 12 mW, and the lasing wavelength at 668.2 nm.     

应力导致InAs/In0.15Ga0.85As量子点结构中In0.15Ga0.85As阱层的合金分解效应研究

利用固源分子束外延技术，在In_0.15Ga_0.85As/GaAs量子阱生长了两个InAs/In_0.15Ga_0.85As量子点(DWELL)样品.通过改变其中一个InAs DWELL样品中的In_0.15Ga_0.85As阱层的厚度和生长温度，获得了量子点尺寸增大而且尺寸分布更均匀的结果.结合光致发光光谱(PL)和压电调制光谱(PzR)实验结果，发现该样品量子点的光学性质也同时得到 关键词： 合金分解效应 0.15Ga_0.85As量子点')" href="#">InAs/In_0.15Ga_0.85As量子点 光致发光光谱 压电调制光谱